High-pressure behavior of perovskite: FeTiO_{3} dissociation into (Fe_{1-delta},Ti_{delta})O and Fe_{1+delta}Ti_{2-delta}O_{5}

Phase transitions beyond post-perovskite in NaMgF3 to 160 GPa

Neighborite, NaMgF_3, is used as a model system for understanding phase transitions in ABX₃ systems (e.g., MgSiO₃) at high pressures. Here we report diamond anvil cell experiments that identify the following phases in NaMgF₃ with compression to 162 GPa: NaMgF₃ (perovskite) → NaMgF₃ (post-perovskite) → NaMgF₃ (Sb₂S₃-type) → NaF (B2-type) + NaMg₂F₅ (P2 ₁ /c) → NaF (B2) + MgF₂ (cotunnite-type). Our results demonstrate the existence of an Sb₂S₃-type post-post-perovskite ABX₃ phase. We also experimentally demonstrate the formation of the P2 ₁ /c AB₂X₅ phase which has been proposed theoretically to be a common high-pressure phase in ABX₃ systems. Our study provides an experimental observation of the full sequence of phase transitions from perovskite to post-perovskite to post-post-perovskite followed by 2-stage breakdown to binary compounds. Notably, a similar sequence of transitions is predicted to occur in MgSiO₃ at ultrahigh pressures, where it has implications for the mineralogy and dynamics in the deep interior of large, rocky extrasolar planets.

Anomalous compression and new high-pressure phases of vanadium sesquioxide, V2O3

We report results of a powder x-ray diffraction (XRD) study of vanadium sesquioxide, V2O3, under pressurization in a neon pressure-transmitting medium up to 57 GPa. We have established a bulk modulus value for corundum-type V2O3 of B0 = 150 GPa at B' = 4. This bulk modulus value is the lowest among those known for the corundum-type-structured oxides, e.g. Al2O3, α-Fe2O3, Cr2O3, Ti2O3, and α-Ga2O3. We have proposed that this might be related to the difference in the electronic band structures: at room temperature V2O3 is metallic, but the above corundum-structured sesquioxides are semiconducting or insulating. Around ∼21-27 and ∼50 GPa we registered changes in the XRD patterns that might be addressed to phase transitions. These transitions were sluggish upon room-temperature compression, and hence we additionally facilitated them by the laser heating of one sample. We have refined the XRD patterns of only the first high-pressure phase in an orthorhombic lattice of a Rh2O3(II)-type. Our findings significantly extend the knowledge of the P-T phase diagram of V2O3 and advance the understanding of its properties. We speculate that the elastic properties of V2O3 can be closely linked to its electronic band structure and, consequently, we propose that slightly doped V2O3 (e.g. with Cr) could be a potential candidate for systems in which the bulk modulus value may be remarkably switched by moderate pressure or temperature.

Portable double-sided laser-heating system for Mössbauer spectroscopy and X-ray diffraction experiments at synchrotron facilities with diamond anvil cells

The diamond anvil cell (DAC) technique coupled with laser heating is a major method for studying materials statically at multimegabar pressures and at high temperatures. Recent progress in experimental techniques, especially in high-pressure single crystal X-ray diffraction, requires portable laser heating systems which are able to heat and move the DAC during data collection. We have developed a double-sided laser heating system for DACs which can be mounted within a rather small (~0.1 m(2)) area and has a weight of ~12 kg. The system is easily transferable between different in-house or synchrotron facilities and can be assembled and set up within a few hours. The system was successfully tested at the High Pressure Station of White Beam (ID09a) and Nuclear Resonance (ID18) beamlines of the European Synchrotron Radiation Facility. We demonstrate examples of application of the system to a single crystal X-ray diffraction investigation of (Mg(0.87),Fe(3+) (0.09),Fe(2+) (0.04))(Si(0.89),Al(0.11))O(3) perovskite (ID09a) and a Synchrotron Mössbauer Source (SMS) study of (Mg(0.8)Fe(0.2))O ferropericlase (ID18).

Perovskite-to-postperovskite transitions in NaNiF3 and NaCoF3 and disproportionation of NaCoF3 postperovskite under high pressure and high temperature

High-pressure structural phase transitions in NaNiF(3) and NaCoF(3) were investigated by conducting in situ synchrotron powder X-ray diffraction experiments using a diamond anvil cell. The perovskite phases (GdFeO(3) type) started to transform into postperovskite phases (CaIrO(3) type) at about 11-14 GPa, even at room temperature. The transition pressure is much lower than those of oxide perovskites. The anisotropic compression behavior led to heavily tilted octahedra that triggered the transition. Unlike oxide postperovskites, fluoropostperovskites remained after decompression to 1 atm. The postperovskite phase in NaCoF(3) broke down into a mixture of unknown phases after laser heating above 26 GPa, and the phases changed into amorphous ones when the pressure was released. High-pressure and high-temperature experiments using a multianvil apparatus were also conducted to elucidate the phase relations in NaCoF(3). Elemental analysis of the recovered amorphous samples indicated that the NaCoF(3) postperovskite disproportionated into two phases. This kind of disproportionation was not evident in NaNiF(3) even after laser heating at 54 GPa. In contrast to the single postpostperovskite phase reported in NaMgF(3), such a postpostperovskite phase was not found in the present compounds.

Structural stability of a golden semiconducting orthorhombic polymorph of Ti2O3 under high pressures and high temperatures

An orthorhombic polymorph of titanium oxide (Ti(2)O(3)) has been synthesized at high pressure-high temperature (HP-HT) conditions. It has been refined in the Pnma space group and the Th(2)S(3) structural type with the unit cell parameters as follows: a = 7.8248(6) Å, b = 2.8507(4) Å, c = 8.0967(3) Å, V = 180.61(1) Å(3) and Z = 4. The samples of Pnma-Ti(2)O(3) were of a golden colour, in contrast to the conventional black corundum-structured Ti(2)O(3). The structural stability of this polymorph has been examined by simultaneous Raman and x-ray diffraction studies under high pressure over 70 GPa and high temperature over 2200 K. No phase transformations or chemical reactions have been established. The electrical resistivity of Th(2)S(3)-structured Ti(2)O(3) samples showed a semiconducting behaviour and, at ambient conditions, was equal to 0.20-0.46 Ω cm. Conventional near-infrared absorption spectroscopy established the absence of energy gaps above 0.25 eV.