Ordered vacancy network induced by the growth of epitaxial graphene on Pt(111)

Jumping Dynamics of Cyanomethyl Radicals on Corrugated Graphene/Ru(0001) Substrates

Graphene adsorbed on Ru(0001) has been widely used as a template for adsorbing and isolating molecules, assembling organic-molecule structures with desired geometric and electronic properties and even inducing chemical reactions that are challenging to achieve in the gas phase. To fully exploit the potential of this substrate, for example, by being able to tune a graphene-based catalyst to perform optimally under specific conditions, it is crucial to understand the factors and mechanisms governing the molecule-substrate interaction. To contribute to this effort, we have conducted a combined experimental and theoretical study of the adsorption of cyanomethyl radicals (-CH2CN) on this substrate below room temperature by performing scanning tunneling microscopy experiments and density functional theory simulations. The main result is the observation that some -CH2CN molecules can jump back and forth between adsorption sites, while such dynamics is not seen above room temperature. We interpret this finding as the consequence of the molecules being adsorbed on a secondary adsorption configuration in which they are bound to the surface through the nitrogen atom. This secondary configuration is much less stable than the primary one, in which the molecule is bound through the -CH2 carbon atom due to an sp2-to-sp3 hybridization transition. The secondary configuration adsorption is achieved only when the cyanomethyl radical is deposited at low temperature. Increasing the substrate temperature provides the molecule with enough energy to reach the most stable adsorption configuration, thereby preventing the jumping.

Nanoscale Chemical Diversity of Coke Deposits on Nanoprinted Metal Catalysts Visualized by Tip-Enhanced Raman Spectroscopy

Coke formation is the prime cause of catalyst deactivation, where undesired carbon wastes block the catalyst surface and hinder further reaction in a broad gamut of industrial chemical processes. Yet, the origins of coke formation and their distribution across the catalyst remain elusive, obstructing the design of coke-resistant catalysts. Here, the first-time application of tip-enhanced Raman spectroscopy (TERS) is demonstrated as a nanoscale chemical probe to localize and identify coke deposits on a post-mortem metal nanocatalyst. Monitoring coke at the nanoscale circumvents bulk averaging and reveals the local nature of coke with unmatched detail. The nature of coke is chemically diverse and ranges from nanocrystalline graphite to disordered and polymeric coke, even on a single nanoscale location of a top-down nanoprinted SiO2 -supported Pt catalyst. Surprisingly, not all Pt is an equal producer of coke, where clear isolated coke "hotspots" are present non-homogeneously on Pt which generate large amounts of disordered coke. After their formation, coke shifts to the support and undergoes long-range transport on the surrounding SiO2 surface, where it becomes more graphitic. The presented results provide novel guidelines to selectively free-up the coked metal surface at more mild rejuvenation conditions, thus securing the long-term catalyst stability.

Oxygen intercalation in PVD graphene grown on copper substrates: A decoupling approach

We investigate the intercalation process of oxygen in-between a PVD-grown graphene layer and different copper substrates as a methodology for reducing the substrate-layer interaction. This growth method leads to an extended defect-free graphene layer that strongly couples with the substrate. We have found, by means of X-ray photoelectron spectroscopy, that after oxygen exposure at different temperatures, ranging from 280 °C to 550 °C, oxygen intercalates at the interface of graphene grown on Cu foil at an optimal temperature of 500 °C. The low energy electron diffraction technique confirms the adsorption of an atomic oxygen adlayer on top of the Cu surface and below graphene after oxygen exposure at elevated temperature, but no oxidation of the substrate is induced. The emergence of the 2D Raman peak, quenched by the large interaction with the substrate, reveals that the intercalation process induces a structural undoing. As suggested by atomic force microscopy, the oxygen intercalation does not change significantly the surface morphology. Moreover, theoretical simulations provide further insights into the electronic and structural undoing process. This protocol opens the door to an efficient methodology to weaken the graphene-substrate interaction for a more efficient transfer to arbitrary surfaces.

Dissimilar Decoupling Behavior of Two-Dimensional Materials on Metal Surfaces

The efficiency of hexagonal boron nitride and graphene to separate the hydrocarbon molecule C₆₄H₃₆ from Ru(0001) and Pt(111) surfaces is explored in low-temperature scanning tunneling microscopy and spectroscopy experiments. Both 2D materials enable the observation of the Franck-Condon effect in both frontier orbitals. On hexagonal boron nitride, vibronic progression with two vibrational energies gives rise to sharp orbital sidebands that are clearly visible up to the second order of the vibrational quantum number with different Huang-Rhys factors. In contrast, on graphene, orbital and vibronic spectroscopic signatures exhibit broad line shapes, with the second-order progression being hardly discriminable. Only a single vibrational quantum energy leaves its fingerprint in the Franck-Condon spectrum.

Chemical Changes of Graphene Oxide Thin Films Induced by Thermal Treatment under Vacuum Conditions

Reduction of graphene oxide is one of the most promising strategies for obtaining bulk quantities of graphene-like materials. In this study, graphene oxide was deposited on SiO2 and reduced by annealing at 500 K under vacuum conditions (5 × 10−1 Pa). Here, graphene oxide films as well as their chemical changes upon heating were characterized in depth by X-ray photoelectron spectroscopy, Raman spectroscopy, and scanning electron and atomic force microscopies. From the chemical point of view, the as prepared graphene oxide films presented a large quantity of oxidized functional groups that were reduced to a large extent upon heating. Moreover, residual oxidized sulfur species that originated during the synthesis of graphene oxide (GO) were almost completely removed by heating while nitrogen traces were integrated into the carbon framework. On the other hand, regarding structural considerations, reduced graphene oxide films showed more homogeneity and lower roughness than graphene oxide films.

Preparation of graphene bilayers on platinum by sequential chemical vapour deposition

Pt deposition reactivates graphene-covered Pt(111) for the epitaxy of a second graphene sheet and subsequent formation of bilayer graphene.

Chemistry below graphene: decoupling epitaxial graphene from metals by potential-controlled electrochemical oxidation

While high-quality defect-free epitaxial graphene can be efficiently grown on metal substrates, strong interaction with the supporting metal quenches its outstanding properties. Thus, protocols to transfer graphene to insulating substrates are obligatory, and these often severely impair graphene properties by the introduction of structural or chemical defects. Here we describe a simple and easily scalable general methodology to structurally and electronically decouple epitaxial graphene from Pt(111) and Ir(111) metal surfaces. A multi-technique characterization combined with ab-initio calculations was employed to fully explain the different steps involved in the process. It was shown that, after a controlled electrochemical oxidation process, a single-atom thick metal-hydroxide layer intercalates below graphene, decoupling it from the metal substrate. This decoupling process occurs without disrupting the morphology and electronic properties of graphene. The results suggest that suitably optimized electrochemical treatments may provide effective alternatives to current transfer protocols for graphene and other 2D materials on diverse metal surfaces.

High-quality PVD graphene growth by fullerene decomposition on Cu foils

We present a new protocol to grow large-area, high-quality single-layer graphene on Cu foils at relatively low temperatures. We use C₆₀ molecules evaporated in ultra high vacuum conditions as carbon source. This clean environment results in a strong reduction of oxygen-containing groups as depicted by X-ray photoelectron spectroscopy (XPS). Unzipping of C₆₀ is thermally promoted by annealing the substrate at 800ºC during evaporation. The graphene layer extends over areas larger than the Cu crystallite size, although it is changing its orientation with respect to the surface in the wrinkles and grain boundaries, producing a modulated ring in the low energy electron diffraction (LEED) pattern. This protocol is a self-limiting process leading exclusively to one single graphene layer. Raman spectroscopy confirms the high quality of the grown graphene. This layer exhibits an unperturbed Dirac-cone with a clear n-doping of 0.77 eV, which is caused by the interaction between graphene and substrate. Density functional theory (DFT) calculations show that this interaction can be induced by a coupling between graphene and substrate at specific points of the structure leading to a local sp³ configuration, which also contribute to the D-band in the Raman spectra.

Atomically-resolved edge states on surface-nanotemplated graphene explored at room temperature

Graphene edges present localized electronic states strongly depending on their shape, size and border configuration. Chiral- or zigzag-ended graphene nanostructures develop spatially and spectrally localized edge states around the Fermi level; however, atomic scale investigations of such graphene terminations and their related electronic states are very challenging and many of their properties remain unexplored. Here we present a combined experimental and theoretical study on graphene stripes showing strong metallic edge states at room temperature. By means of scanning tunneling microscopy, we demonstrate the use of vicinal Pt(111) as a template for the growth of graphene stripes and characterize their electronic structure. We find the formation of a sublattice localized electronic state confined on the free-standing edges of the graphene ribbons at energies close to the Fermi level. These experimental results are reproduced and understood with tight-binding and ab initio calculations. Our results provide a new way of synthesizing wide graphene stripes with zigzag edge termination and open new prospects in the study of valley and spin phenomena at their interfaces.

Spin-Orbit Coupling Induced Gap in Graphene on Pt(111) with Intercalated Pb Monolayer

Graphene is one of the most promising materials for nanoelectronics owing to its unique Dirac cone-like dispersion of the electronic state and high mobility of the charge carriers. However, to facilitate the implementation of the graphene-based devices, an essential change of its electronic structure, a creation of the band gap should controllably be done. Brought about by two fundamentally different mechanisms, a sublattice symmetry breaking or an induced strong spin-orbit interaction, the band gap appearance can drive graphene into a narrow-gap semiconductor or a 2D topological insulator phase, respectively, with both cases being technologically relevant. The later case, characterized by a spin-orbit gap between the valence and conduction bands, can give rise to the spin-polarized topologically protected edge states. Here, we study the effect of the spin-orbit interaction enhancement in graphene placed in contact with a lead monolayer. By means of angle-resolved photoemission spectroscopy, we show that intercalation of the Pb interlayer between the graphene sheet and the Pt(111) surface leads to formation of a gap of ∼200 meV at the Dirac point of graphene. Spin-resolved measurements confirm the splitting to be of a spin-orbit nature, and the measured near-gap spin structure resembles that of the quantum spin Hall state in graphene, proposed by Kane and Mele [ Phys. Rev. Lett. 2005 , 95 , 226801 ]. With a bandstructure tuned in this way, graphene acquires a functionality going beyond its intrinsic properties and becomes more attractive for possible spintronic applications.

In Situ Graphene Growth Dynamics on Polycrystalline Catalyst Foils

The dynamics of graphene growth on polycrystalline Pt foils during chemical vapor deposition (CVD) are investigated using in situ scanning electron microscopy and complementary structural characterization of the catalyst with electron backscatter diffraction. A general growth model is outlined that considers precursor dissociation, mass transport, and attachment to the edge of a growing domain. We thereby analyze graphene growth dynamics at different length scales and reveal that the rate-limiting step varies throughout the process and across different regions of the catalyst surface, including different facets of an individual graphene domain. The facets that define the domain shapes lie normal to slow growth directions, which are determined by the interfacial mobility when attachment to domain edges is rate-limiting, as well as anisotropy in surface diffusion as diffusion becomes rate-limiting. Our observations and analysis thus reveal that the structure of CVD graphene films is intimately linked to that of the underlying polycrystalline catalyst, with both interfacial mobility and diffusional anisotropy depending on the presence of step edges and grain boundaries. The growth model developed serves as a general framework for understanding and optimizing the growth of 2D materials on polycrystalline catalysts.

Role of the Pinning Points in epitaxial Graphene Moiré Superstructures on the Pt(111) Surface

The intrinsic atomic mechanisms responsible for electronic doping of epitaxial graphene Moirés on transition metal surfaces is still an open issue. To better understand this process we have carried out a first-principles full characterization of the most representative Moiré superstructures observed on the Gr/Pt(111) system and confronted the results with atomically resolved scanning tunneling microscopy experiments. We find that for all reported Moirés the system relaxes inducing a non-negligible atomic corrugation both, at the graphene and at the outermost platinum layer. Interestingly, a mirror “anti-Moiré” reconstruction appears at the substrate, giving rise to the appearance of pinning-points. We show that these points are responsible for the development of the superstructure, while charge from the Pt substrate is injected into the graphene, inducing a local n-doping, mostly localized at these specific pinning-point positions.

Vacancy formation on C60/Pt (111): unraveling the complex atomistic mechanism

The interaction of fullerenes with transition metal surfaces leads to the development of an atomic network of ordered vacancies on the metal. However, the structure and formation mechanism of this intricate surface reconstruction is not yet understood at an atomic level. We combine scanning tunneling microscopy, high resolution and temperature programmed-x-ray photoelectrons spectroscopy, and density functional theory calculations to show that the vacancy formation in C60/Pt(111) is a complex process in which fullerenes undergo two significant structural rearrangements upon thermal annealing. At first, the molecules are physisorbed on the surface; next, they chemisorb inducing the formation of an adatom-vacancy pair on the side of the fullerene. Finally, this metastable state relaxes when the adatom migrates away and the vacancy moves under the molecule. The evolution from a weakly-bound fullerene to a chemisorbed state with a vacancy underneath could be triggered by residual H atoms on the surface which prevent a strong surface-adsorbate bonding right after deposition. Upon annealing at about 440 K, when all H has desorbed, the C60 interacts with the Pt surface atoms forming the vacancy-adatom pair. This metastable state induces a small charge transfer and precedes the final adsorption structure.

Electron transport enhanced by electrode surface reconstruction: a case study of C60-based molecular junctions

At the C₆₀–Cu(111) interface, electrode surface reconstruction (Rec) increases electrical current compared to that for the unreconstructed (Unrec) surface.

First-principles study on the reconstruction induced by the adsorption of C60 on Pt(111)

The adsorption of C60 on a Pt(111) surface and the origins of the √13 × √13R13.9° or 2√3 × 2√3R30° reconstruction of the C60/Pt(111) system have been investigated by means of first-principles calculations. In agreement with the experimental observations, our calculations reveal that the C60 molecule binds covalently on the Pt(111) surface. The C60 molecule adsorbs on the Pt(111) surface with the center of a hexagonal ring located on top of a surface Pt atom. The surface Pt atom can be removed easily, forming a Pt vacancy upon the adsorption of C60 molecule. Our calculation results show that the strong covalent bonds between C60 and the Pt(111) surface and the formation of adatom-vacancy pairs in the C60/Pt(111) system may be the main driving forces promoting the substrate reconstructing pattern observed in experiments.

Graphene growth on a Pt(111) substrate by surface segregation and precipitation

We report on the fabrication of a sizable graphene sheet on a carbon-doped Pt(111) substrate through surface segregation and precipitation. Scanning Auger electron spectroscopy (AES) reveals that the graphene covered more than 98% of the substrate surface. Our graphene consists of single-layer graphene across the substrate with fractions of several micrometer wide bi- and tri-layer graphene islands. We also show that the number of graphene layers can be precisely determined by analyzing AES data. While Raman spectroscopy is usually used to study graphene on SiO₂, we show that AES is a powerful tool to characterize graphene grown on metal substrates.

Growth and atomic-scale characterizations of graphene on multifaceted textured Pt foils prepared by chemical vapor deposition

The synthesis of centimeter-scale uniform graphene on Pt foils was accomplished via a traditional ambient pressure chemical vapor deposition (CVD) method. Using scanning electron microscopy (SEM) and Raman spectroscopy, we reveal the macroscopic continuity, the thickness, as well as the defect state of as-grown graphene. Of particular importance is that the Pt foils after CVD growth have multifaceted texture, which allows us to explore the substrate crystallography effect on the growth rate and the continuity of graphene. By virtue of atomically resolved scanning tunneling microscopy (STM), we conclude that graphene grows mainly in registry with the symmetries of Pt(111), Pt(110), and Pt(100) facets, leading to hexagonal lattices and striped superstructures. Nevertheless, the carbon lattices on interweaving facets with different identities are connected seamlessly, which ensure the graphene growth from nanometer to micrometer levels. With these results, another prototype for clarifying the preliminary growth mechanism of the CVD process is demonstrated as an analogue of graphene on Cu foils.

Ethylene irradiation: a new route to grow graphene on low reactivity metals

A novel technique for growing graphene on relatively inert metals, consisting in the thermal decomposition of low energy ethylene ions irradiated on hot metal surfaces in ultrahigh vacuum, is reported. By this route, we have grown graphene monolayers on Cu(111) and, for the first time, on Au(111) surfaces. For both noble metal substrates, but particularly for Au(111), our scanning tunneling microscopy and spectroscopy measurements provide sound evidence of a very weak graphene-metal interaction.

Point defects on graphene on metals

Understanding the coupling of graphene with its local environment is critical to be able to integrate it in tomorrow's electronic devices. Here we show how the presence of a metallic substrate affects the properties of an atomically tailored graphene layer. We have deliberately introduced single carbon vacancies on a graphene monolayer grown on a Pt(111) surface and investigated its impact in the electronic, structural, and magnetic properties of the graphene layer. Our low temperature scanning tunneling microscopy studies, complemented by density functional theory, show the existence of a broad electronic resonance above the Fermi energy associated with the vacancies. Vacancy sites become reactive leading to an increase of the coupling between the graphene layer and the metal substrate at these points; this gives rise to a rapid decay of the localized state and the quenching of the magnetic moment associated with carbon vacancies in freestanding graphene layers.

Strain-driven Moiré superstructures of epitaxial graphene on transition metal surfaces

STM images of multidomain epitaxial graphene on Pt(111) have been combined with a geometrical model to investigate the origin of the coincidence Moiré superstructures. We show that there is a relation between the appearance of a particular Moiré periodicity and the minimization of the absolute value of the strain between the graphene and the substrate for the different orientations between both atomic lattices. This model predicts all the stable epitaxial graphene structures that can be grown on transition metal surfaces, and we have made use of it for reproducing previously published data from different authors. Its validity suggests that minimization of the strain within the coincident graphene unit-cell due to a strong local interaction is the driving force in the formation of Moiré superstructures.