1
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Xie Y, Vakili H, Ganguly S, Ghosh AW. Anatomy of nanomagnetic switching at a 3D topological insulator PN junction. Sci Rep 2023; 13:9477. [PMID: 37301850 DOI: 10.1038/s41598-023-35623-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Accepted: 05/21/2023] [Indexed: 06/12/2023] Open
Abstract
A P-N junction engineered within a Dirac cone system acts as a gate tunable angular filter based on Klein tunneling. For a 3D topological insulator with a substantial bandgap, such a filter can produce a charge-to-spin conversion due to the dual effects of spin-momentum locking and momentum filtering. We analyze how spins filtered at an in-plane topological insulator PN junction (TIPNJ) interact with a nanomagnet, and argue that the intrinsic charge-to-spin conversion does not translate to an external gain if the nanomagnet also acts as the source contact. Regardless of the nanomagnet's position, the spin torque generated on the TIPNJ is limited by its surface current density, which in turn is limited by the bulk bandgap. Using quantum kinetic models, we calculated the spatially varying spin potential and quantified the localization of the current versus the applied bias. Additionally, with the magnetodynamic simulation of a soft magnet, we show that the PN junction can offer a critical gate tunability in the switching probability of the nanomagnet, with potential applications in probabilistic neuromorphic computing.
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Affiliation(s)
- Yunkun Xie
- School of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22903, USA
| | - Hamed Vakili
- Department of Physics, University of Virginia, Charlottesville, VA, 22903, USA.
| | - Samiran Ganguly
- School of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22903, USA
- Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, 23284, USA
| | - Avik W Ghosh
- School of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22903, USA
- Department of Physics, University of Virginia, Charlottesville, VA, 22903, USA
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2
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Xu X, Zhang L, Zou L, Li M, Wang H. Regulating Interfacial Spin Hall Conductivity with Ferroelectricity. J Phys Chem Lett 2022; 13:3310-3316. [PMID: 35389645 DOI: 10.1021/acs.jpclett.2c00616] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We report a new physical phenomenon of active and enhanced control of the spin Hall conductivity (SHC) in a family of metal-ferroelectric multilayers. Rather than the direction of the built-in electric field, such ferroelectric regulation of SHC originates from the drastic change of the interfacial electronic state along with its intrinsic Berry phase near the Fermi level due to the distinct hybridization between the metal film and substrate when the ferroelectric polarization reverses. Using Pt/PbZrTiO3 multilayers as a representative model, we demonstrate the controllability of a large magnitude and even the sign of SHC in the Pt film at the two interfaces with an antitype conducting carrier in a ferroelectric substrate. The interfacial Rashba effect plays a role in contributing to the change of SHC through spin-projected band analysis. The present work makes a fundamental theoretical discovery and opens up a new direction to manipulate spin-charge conversion of thin-film layered structures by ferroelectricity, which is crucial for designing future electric and spintronic devices.
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Affiliation(s)
- Xiong Xu
- School of Physics and Electronics, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Long Zhang
- School of Physics and Electronics, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Lin Zou
- School of Physics and Electronics, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Min Li
- School of Physics and Electronics, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Hui Wang
- School of Physics and Electronics, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
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3
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Fang M, Wang Y, Wang H, Hou Y, Vetter E, Kou Y, Yang W, Yin L, Xiao Z, Li Z, Jiang L, Lee HN, Zhang S, Wu R, Xu X, Sun D, Shen J. Tuning the interfacial spin-orbit coupling with ferroelectricity. Nat Commun 2020; 11:2627. [PMID: 32457302 PMCID: PMC7250895 DOI: 10.1038/s41467-020-16401-7] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2019] [Accepted: 04/28/2020] [Indexed: 11/26/2022] Open
Abstract
Detection and manipulation of spin current lie in the core of spintronics. Here we report an active control of a net spin Hall angle, θSHE(net), in Pt at an interface with a ferroelectric material PZT (PbZr0.2Ti0.8O3), using its ferroelectric polarization. The spin Hall angle in the ultra-thin Pt layer is measured using the inverse spin Hall effect with a pulsed tunneling current from a ferromagnetic La0.67Sr0.33MnO3 electrode. The effect of the ferroelectric polarization on θSHE(net) is enhanced when the thickness of the Pt layer is reduced. When the Pt layer is thinner than 6 nm, switching the ferroelectric polarization even changes the sign of θSHE(net). This is attributed to the reversed polarity of the spin Hall angle in the 1st-layer Pt at the PZT/Pt interface when the ferroelectric polarization is inverted, as supported by the first-principles calculations. These findings suggest a route for designing future energy efficient spin-orbitronic devices using ferroelectric control. The spin Hall angle (SHA) is a measure of the efficiency for converting a charge to a spin current is still challenging to tune in situ. Here, the authors demonstrate by introducing a ferroelectric (FE) material in a ferromagnetic/heavy metal stack the SHA can be voltage controled via the polarization of the FE layer.
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Affiliation(s)
- Mei Fang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China.,Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 410083, Changsha, Hunan, China
| | - Yanmei Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Hui Wang
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 410083, Changsha, Hunan, China.,Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Yusheng Hou
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Eric Vetter
- Department of Physics, North Carolina State University, Raleigh, NC, 27695, USA.,Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Yunfang Kou
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Wenting Yang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Lifeng Yin
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China.,Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, 200433, Shanghai, China.,Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
| | - Zhu Xiao
- School of Materials Science and Engineering, Central South University, 410083, Changsha, Hunan, China
| | - Zhou Li
- School of Materials Science and Engineering, Central South University, 410083, Changsha, Hunan, China
| | - Lu Jiang
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Ho Nyung Lee
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Shufeng Zhang
- Department of Physics, University of Arizona, Tucson, AZ, 85721, USA
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Xiaoshan Xu
- Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA.
| | - Dali Sun
- Department of Physics, North Carolina State University, Raleigh, NC, 27695, USA. .,Organic and Carbon Electronics Lab (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA.
| | - Jian Shen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China. .,Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, 200433, Shanghai, China. .,Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China.
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4
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Okamoto S, Egami T, Nagaosa N. Critical Spin Fluctuation Mechanism for the Spin Hall Effect. PHYSICAL REVIEW LETTERS 2019; 123:196603. [PMID: 31765189 DOI: 10.1103/physrevlett.123.196603] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2019] [Revised: 08/10/2019] [Indexed: 06/10/2023]
Abstract
We propose mechanisms for the spin Hall effect in metallic systems arising from the coupling between conduction electrons and local magnetic moments that are dynamically fluctuating. Both a side-jump-type mechanism and a skew-scattering-type mechanism are considered. In either case, dynamical spin fluctuation gives rise to a nontrivial temperature dependence in the spin Hall conductivity. This leads to the enhancement in the spin Hall conductivity at nonzero temperatures near the ferromagnetic instability. The proposed mechanisms could be observed in 4d or 5d metallic compounds.
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Affiliation(s)
- Satoshi Okamoto
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Takeshi Egami
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
- Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, USA
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Naoto Nagaosa
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
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5
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Zhu T, Chang FF, Zhan XZ. Interface induced enhancement of inverse spin Hall voltage in NiFe/Pt bilayers capped by MgO layer. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:285801. [PMID: 30959493 DOI: 10.1088/1361-648x/ab172a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In ferromagnet/heavy metal bilayers, a spin current can be generated under the ferromagnetic resonance (FMR) condition, and then converted into a charge current in adjacent nonmagnetic metals through inverse spin Hall effect (ISHE). Here, we report an experimental observation of interface induced ISHE enhancement in NiFe/Pt bilayers covered by MgO layer. Compared to bare NiFe/Pt bilayers, Pt/MgO interface induces an enhancement of the spin-charge conversion in the NiFe/Pt/MgO trilayers with very thin Pt layers, in agreement with the corresponding trend of Gilbert damping enhancement. When the thickness of Pt is below 1.6 nm, the ISHE induced charge current has about 70% enhancement. These results open a new pathway to improve the spin-charge conversion efficiency by interface engineering.
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Affiliation(s)
- T Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China. Dongguan Neutron Science Center, Dongguan 523803, People's Republic of China
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6
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Tian K, Tiwari A. CuPt Alloy Thin Films for Application in Spin Thermoelectrics. Sci Rep 2019; 9:3133. [PMID: 30816270 PMCID: PMC6395799 DOI: 10.1038/s41598-019-40021-x] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2018] [Accepted: 01/28/2019] [Indexed: 11/13/2022] Open
Abstract
Spin thermoelectrics represents a new paradigm of thermoelectricity that has a potential to overcome the fundamental limitation posed by the Wiedmann-Franz law on the efficiency of conventional thermoelectric devices. A typical spin thermoelectric device consists of a bilayer of a magnetic insulator and a high spin-orbit coupling (SOC) metal coated over a non-magnetic substrate. Pt is the most commonly used metal in spin thermoelectric devices due to its strong SOC. In this paper, we found that an alloy of Cu and Pt can perform much better than Pt in spin thermoelectric devices. A series of CuPt alloy films with different Pt concentrations were deposited on yttrium iron garnet (YIG) films coated gadolinium gallium garnet (GGG) substrate. Through spin Seebeck measurements, it was found that the Cu0.4Pt0.6/YIG/GGG device shows almost 3 times higher spin Seebeck voltage compared to Pt/YIG/GGG under identical conditions. The improved performance was attributed to the higher resistivity as well as enhanced spin hall angle of the CuPt layer.
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Affiliation(s)
- Kun Tian
- Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah, 84112, USA
| | - Ashutosh Tiwari
- Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah, 84112, USA.
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7
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Obstbaum M, Decker M, Greitner AK, Haertinger M, Meier TNG, Kronseder M, Chadova K, Wimmer S, Ködderitzsch D, Ebert H, Back CH. Tuning Spin Hall Angles by Alloying. PHYSICAL REVIEW LETTERS 2016; 117:167204. [PMID: 27792386 DOI: 10.1103/physrevlett.117.167204] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2016] [Indexed: 06/06/2023]
Abstract
Within a combined experimental and theoretical study it is shown that the spin Hall angle of a substitutional alloy system can be continuously varied via its composition. For the alloy system Au_{x}Pt_{1-x} a substantial increase of the maximum spin Hall angle compared to the pure alloy partners could be achieved this way. The experimental findings for the longitudinal charge conductivity σ, the transverse spin Hall conductivity σ_{SH}, and the spin Hall angle α_{SH} could be confirmed by calculations based on Kubo's linear response formalism. Calculations of these response quantities for different temperatures show that the divergent behavior of σ and σ_{SH} is rapidly suppressed with increasing temperature. As a consequence, σ_{SH} is dominated at higher temperatures by its intrinsic contribution that has only a rather weak temperature dependence.
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Affiliation(s)
- M Obstbaum
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany
| | - M Decker
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany
| | - A K Greitner
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany
| | - M Haertinger
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany
| | - T N G Meier
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany
| | - M Kronseder
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany
| | - K Chadova
- Department Chemie, Ludwig-Maximilians-Universität (LMU) München, 81377 Munich, Germany
| | - S Wimmer
- Department Chemie, Ludwig-Maximilians-Universität (LMU) München, 81377 Munich, Germany
| | - D Ködderitzsch
- Department Chemie, Ludwig-Maximilians-Universität (LMU) München, 81377 Munich, Germany
| | - H Ebert
- Department Chemie, Ludwig-Maximilians-Universität (LMU) München, 81377 Munich, Germany
| | - C H Back
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany
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8
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Spin-torque generator engineered by natural oxidation of Cu. Nat Commun 2016; 7:13069. [PMID: 27725654 PMCID: PMC5062613 DOI: 10.1038/ncomms13069] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2016] [Accepted: 08/31/2016] [Indexed: 11/08/2022] Open
Abstract
The spin Hall effect is a spin–orbit coupling phenomenon, which enables electric generation and detection of spin currents. This relativistic effect provides a way for realizing efficient spintronic devices based on electric manipulation of magnetization through spin torque. However, it has been believed that heavy metals are indispensable for the spin–torque generation. Here we show that the spin Hall effect in Cu, a light metal with weak spin–orbit coupling, is significantly enhanced through natural oxidation. We demonstrate that the spin–torque generation efficiency of a Cu/Ni81Fe19 bilayer is enhanced by over two orders of magnitude by tuning the surface oxidation, reaching the efficiency of Pt/ferromagnetic metal bilayers. This finding illustrates a crucial role of oxidation in the spin Hall effect, opening a route for engineering the spin–torque generator by oxygen control and manipulating magnetization without using heavy metals. In thin film spintronic devices, heavy metals with strong spin-orbit coupling are required to achieve a sizeable spin Hall effect. Here, the authors demonstrate an enhancement of the spin Hall effect in Cu, a material with weak spin-orbit coupling, via natural oxidation.
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9
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Hou D, Qiu Z, Iguchi R, Sato K, Vehstedt EK, Uchida K, Bauer GEW, Saitoh E. Observation of temperature-gradient-induced magnetization. Nat Commun 2016; 7:12265. [PMID: 27457185 PMCID: PMC4963471 DOI: 10.1038/ncomms12265] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2016] [Accepted: 06/16/2016] [Indexed: 12/03/2022] Open
Abstract
Applying magnetic fields has been the method of choice to magnetize non-magnetic materials, but they are difficult to focus. The magneto-electric effect and voltage-induced magnetization generate magnetization by applied electric fields, but only in special compounds or heterostructures. Here we demonstrate that a simple metal such as gold can be magnetized by a temperature gradient or magnetic resonance when in contact with a magnetic insulator by observing an anomalous Hall-like effect, which directly proves the breakdown of time-reversal symmetry. Such Hall measurements give experimental access to the spectral spin Hall conductance of the host metal, which is closely related to other spin caloritronics phenomena such as the spin Nernst effect and serves as a reference for theoretical calculation.
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Affiliation(s)
- Dazhi Hou
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577, Japan
| | - Zhiyong Qiu
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577, Japan
| | - R. Iguchi
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - K. Sato
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - E. K. Vehstedt
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- London Centre for Nanotechnology and Department of Electronic and Electrical Engineering, University College London, 17-19 Gordon Street, London WC1H 0AH, UK
| | - K. Uchida
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- PRESTO, Japan Science and Technology Agency, Saitama 332-0012, Japan
| | - G. E. W. Bauer
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Kavli Institute of NanoScience, Delft University of Technology, Delft 2628 CJ, The Netherlands
| | - E. Saitoh
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577, Japan
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan
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10
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Yang AC, Yan SS, Zhang K, Li HH, Pei J, He LM, Tian YF, Qin YF, Kang SS, Xiao SQ. Rashba spin–orbit coupling enhanced anomalous Hall effect in MnxSi1−x/SiO2/Si p–i–n junctions. RSC Adv 2016. [DOI: 10.1039/c6ra05340h] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
The Mn0.48Si0.52/SiO2/Si p–i–n junction shows greatly enhanced negative anomalous Hall effect in the high temperature range due to the interfacial Rashba spin–orbit coupling.
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11
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Xu Z, Gu B, Mori M, Ziman T, Maekawa S. Sign change of the spin Hall effect due to electron correlation in nonmagnetic CuIr alloys. PHYSICAL REVIEW LETTERS 2015; 114:017202. [PMID: 25615499 DOI: 10.1103/physrevlett.114.017202] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2014] [Indexed: 06/04/2023]
Abstract
Recently, a positive spin Hall angle (SHA) of 0.021 was observed experimentally in nonmagnetic CuIr alloys [Niimi et al, Phys. Rev. Lett. 106, 126601 (2011)] and attributed predominantly to an extrinsic skew scattering mechanism, while a negative SHA was obtained from ab initio calculations [Fedorov et al, Phys. Rev. B 88, 085116 (2013)], using consistent definitions of the SHA. We reconsider the SHA in CuIr alloys, with the effects of the local electron correlation U in 5d orbitals of Ir impurities, included by the quantum Monte Carlo method. We found that the SHA is negative if we ignore such local electron correlation, but becomes positive once U approaches a realistic value. This may open up a way to control the sign of the SHA by manipulating the occupation number of impurities.
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Affiliation(s)
- Zhuo Xu
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan and CREST, Japan Science and Technology Agency, Sanbancho, Tokyo 102-0075, Japan
| | - Bo Gu
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan and CREST, Japan Science and Technology Agency, Sanbancho, Tokyo 102-0075, Japan
| | - Michiyasu Mori
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan and CREST, Japan Science and Technology Agency, Sanbancho, Tokyo 102-0075, Japan
| | - Timothy Ziman
- Institut Laue Langevin, Boîte Postale 156, F-38042 Grenobel Cedex 9, France and LPMMC (UMR 5493), Université Grenoble 1 and CNRS, 38042 Grenoble, France
| | - Sadamichi Maekawa
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan and CREST, Japan Science and Technology Agency, Sanbancho, Tokyo 102-0075, Japan
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12
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Fujiwara K, Fukuma Y, Matsuno J, Idzuchi H, Niimi Y, Otani Y, Takagi H. 5d iridium oxide as a material for spin-current detection. Nat Commun 2013; 4:2893. [DOI: 10.1038/ncomms3893] [Citation(s) in RCA: 89] [Impact Index Per Article: 8.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2013] [Accepted: 11/07/2013] [Indexed: 11/09/2022] Open
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13
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Niimi Y, Kawanishi Y, Wei DH, Deranlot C, Yang HX, Chshiev M, Valet T, Fert A, Otani Y. Giant spin Hall effect induced by skew scattering from bismuth impurities inside thin film CuBi alloys. PHYSICAL REVIEW LETTERS 2012; 109:156602. [PMID: 23102348 DOI: 10.1103/physrevlett.109.156602] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2012] [Indexed: 06/01/2023]
Abstract
We demonstrate that a giant spin Hall effect (SHE) can be induced by introducing a small amount of Bi impurities in Cu. Our analysis, based on a new three-dimensional finite element treatment of spin transport, shows that the sign of the SHE induced by the Bi impurities is negative and its spin Hall (SH) angle amounts to -0.24. Such a negative large SH angle in CuBi alloys can be explained by applying the resonant scattering model proposed by Fert and Levy [Phys. Rev. Lett. 106, 157208 (2011)] to 6p impurities.
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Affiliation(s)
- Y Niimi
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba, Japan.
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14
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Liu L, Pai CF, Li Y, Tseng HW, Ralph DC, Buhrman RA. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum. Science 2012; 336:555-8. [DOI: 10.1126/science.1218197] [Citation(s) in RCA: 2583] [Impact Index Per Article: 215.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
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15
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Niimi Y, Morota M, Wei DH, Deranlot C, Basletic M, Hamzic A, Fert A, Otani Y. Extrinsic spin Hall effect induced by iridium impurities in copper. PHYSICAL REVIEW LETTERS 2011; 106:126601. [PMID: 21517335 DOI: 10.1103/physrevlett.106.126601] [Citation(s) in RCA: 39] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2011] [Indexed: 05/30/2023]
Abstract
We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, (2.1±0.6)% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy.
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Affiliation(s)
- Y Niimi
- Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwa-no-ha, Kashiwa, Chiba 277-8581, Japan.
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16
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Liu L, Moriyama T, Ralph DC, Buhrman RA. Spin-torque ferromagnetic resonance induced by the spin Hall effect. PHYSICAL REVIEW LETTERS 2011; 106:036601. [PMID: 21405285 DOI: 10.1103/physrevlett.106.036601] [Citation(s) in RCA: 281] [Impact Index Per Article: 21.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2010] [Indexed: 05/17/2023]
Abstract
We demonstrate that the spin Hall effect in a thin film with strong spin-orbit scattering can excite magnetic precession in an adjacent ferromagnetic film. The flow of alternating current through a Pt/NiFe bilayer generates an oscillating transverse spin current in the Pt, and the resultant transfer of spin angular momentum to the NiFe induces ferromagnetic resonance dynamics. The Oersted field from the current also generates a ferromagnetic resonance signal but with a different symmetry. The ratio of these two signals allows a quantitative determination of the spin current and the spin Hall angle.
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Affiliation(s)
- Luqiao Liu
- Cornell University, Ithaca, New York 14853, USA
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