1
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Savytskyy R, Botzem T, Fernandez de Fuentes I, Joecker B, Pla JJ, Hudson FE, Itoh KM, Jakob AM, Johnson BC, Jamieson DN, Dzurak AS, Morello A. An electrically driven single-atom "flip-flop" qubit. SCIENCE ADVANCES 2023; 9:eadd9408. [PMID: 36763660 PMCID: PMC9916988 DOI: 10.1126/sciadv.add9408] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/13/2022] [Accepted: 01/09/2023] [Indexed: 06/18/2023]
Abstract
The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic devices. Here, we circumvent this hurdle by operating a single-atom "flip-flop" qubit in silicon, where quantum information is encoded in the electron-nuclear states of a phosphorus donor. The qubit is controlled using local electric fields at microwave frequencies, produced within a metal-oxide-semiconductor device. The electrical drive is mediated by the modulation of the electron-nuclear hyperfine coupling, a method that can be extended to many other atomic and molecular systems and to the hyperpolarization of nuclear spin ensembles. These results pave the way to the construction of solid-state quantum processors where dense arrays of atoms can be controlled using only local electric fields.
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Affiliation(s)
- Rostyslav Savytskyy
- School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, NSW 2052, Australia
| | - Tim Botzem
- School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, NSW 2052, Australia
| | | | - Benjamin Joecker
- School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, NSW 2052, Australia
| | - Jarryd J. Pla
- School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, NSW 2052, Australia
| | - Fay E. Hudson
- School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, NSW 2052, Australia
| | - Kohei M. Itoh
- School of Fundamental Science and Technology, Keio University, Kohoku-ku, Yokohama, Japan
| | - Alexander M. Jakob
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - Brett C. Johnson
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - David N. Jamieson
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - Andrew S. Dzurak
- School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, NSW 2052, Australia
| | - Andrea Morello
- School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, NSW 2052, Australia
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2
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Ma Dzik MT, Laucht A, Hudson FE, Jakob AM, Johnson BC, Jamieson DN, Itoh KM, Dzurak AS, Morello A. Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device. Nat Commun 2021; 12:181. [PMID: 33420013 PMCID: PMC7794236 DOI: 10.1038/s41467-020-20424-5] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/28/2020] [Accepted: 12/02/2020] [Indexed: 11/09/2022] Open
Abstract
Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single-donor atom, introduced in the silicon by ion implantation, the quantum information can be stored for nearly 1 second. However, manufacturing a scalable quantum processor with this method is considered challenging, because of the exponential sensitivity of the exchange interaction that mediates the coupling between the qubits. Here we demonstrate the conditional, coherent control of an electron spin qubit in an exchange-coupled pair of 31P donors implanted in silicon. The coupling strength, J = 32.06 ± 0.06 MHz, is measured spectroscopically with high precision. Since the coupling is weaker than the electron-nuclear hyperfine coupling A ≈ 90 MHz which detunes the two electrons, a native two-qubit controlled-rotation gate can be obtained via a simple electron spin resonance pulse. This scheme is insensitive to the precise value of J, which makes it suitable for the scale-up of donor-based quantum computers in silicon that exploit the metal-oxide-semiconductor fabrication protocols commonly used in the classical electronics industry.
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Affiliation(s)
- Mateusz T Ma Dzik
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, NSW, 2052, Australia
| | - Arne Laucht
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, NSW, 2052, Australia
| | - Fay E Hudson
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, NSW, 2052, Australia
| | - Alexander M Jakob
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC, 3010, Australia
| | - Brett C Johnson
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC, 3010, Australia
| | - David N Jamieson
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC, 3010, Australia
| | - Kohei M Itoh
- School of Fundamental Science and Technology, Keio University, 3-14-1, Hiyoshi, 223-8522, Japan
| | - Andrew S Dzurak
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, NSW, 2052, Australia
| | - Andrea Morello
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, NSW, 2052, Australia.
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3
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Gong P, Pang H, Yu H, Yao W. Nanometrology of field gradient using donor spins in silicon. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:425301. [PMID: 30198860 DOI: 10.1088/1361-648x/aae009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We proposed a novel scheme for nanometrology of magnetic field gradient based on Kane's silicon quantum computer proposal. When the system is placed in an unknown magnetic field gradient, the inhomogeneous precession of the donor nuclear spins records the field gradient information to the phase pattern of donor nuclear spins. By adding AC voltage modulations on each A-gate to induce hyperfine-mediated electron-nuclear collective flip-flop process, we demonstrate that the gradient value can be obtained by tuning the modulation phases of the A-gates. Errors of the measurements of such scheme is discussed and estimated. It is also discussed that in presence of the external field with a known gradient, the same system is possible to be used to obtain the unknown displacement of donor locations.
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Affiliation(s)
- Pu Gong
- Department of Physics, and Center for Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, People's Republic of China
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4
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Mansir J, Conti P, Zeng Z, Pla JJ, Bertet P, Swift MW, Van de Walle CG, Thewalt MLW, Sklenard B, Niquet YM, Morton JJL. Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain. PHYSICAL REVIEW LETTERS 2018; 120:167701. [PMID: 29756909 DOI: 10.1103/physrevlett.120.167701] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2017] [Indexed: 06/08/2023]
Abstract
We experimentally study the coupling of group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts that are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains |ϵ|<10^{-5}. Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semiquantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150 GHz per strain, for Bi donors in Si) offers a method for donor spin tuning-shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order 10^{-6}-as well as opportunities for coupling to mechanical resonators.
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Affiliation(s)
- J Mansir
- London Centre for Nanotechnology, UCL, 17-19 Gordon St, London WC1H 0AH, United Kingdom
| | - P Conti
- London Centre for Nanotechnology, UCL, 17-19 Gordon St, London WC1H 0AH, United Kingdom
| | - Z Zeng
- Université Grenoble Alpes, CEA, INAC-MEM, L_Sim, F-38000 Grenoble, France
| | - J J Pla
- School of Electrical Engineering & Telecommunications, University of New South Wales, Sydney, NSW 2052, Australia
| | - P Bertet
- Quantronics Group, SPEC, CEA, CNRS, Université Paris-Saclay, CEA-Saclay, 91191 Gif-sur-Yvette, France
| | - M W Swift
- Materials Department, University of California, Santa Barbara, California 93106-5050, USA
| | - C G Van de Walle
- Materials Department, University of California, Santa Barbara, California 93106-5050, USA
| | - M L W Thewalt
- Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
| | - B Sklenard
- Université Grenoble Alpes & CEA, LETI, MINATEC Campus, F-38000 Grenoble, France
| | - Y M Niquet
- Université Grenoble Alpes, CEA, INAC-MEM, L_Sim, F-38000 Grenoble, France
| | - J J L Morton
- London Centre for Nanotechnology, UCL, 17-19 Gordon St, London WC1H 0AH, United Kingdom
- Dept of Electronic and Electrical Engineering, UCL, London WC1E 7JE, United Kingdom
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5
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Laucht A, Kalra R, Simmons S, Dehollain JP, Muhonen JT, Mohiyaddin FA, Freer S, Hudson FE, Itoh KM, Jamieson DN, McCallum JC, Dzurak AS, Morello A. A dressed spin qubit in silicon. NATURE NANOTECHNOLOGY 2017; 12:61-66. [PMID: 27749833 DOI: 10.1038/nnano.2016.178] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2016] [Accepted: 08/17/2016] [Indexed: 06/06/2023]
Abstract
Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties-a different and easily tunable level splitting, faster control and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and assess its potential as a quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, frequency modulation of the driving field or a simple detuning pulse. We measure coherence times of and , one order of magnitude longer than those of the undressed spin. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.
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Affiliation(s)
- Arne Laucht
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Australia, Sydney, New South Wales 2052, Australia
| | - Rachpon Kalra
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Australia, Sydney, New South Wales 2052, Australia
| | - Stephanie Simmons
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Australia, Sydney, New South Wales 2052, Australia
| | - Juan P Dehollain
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Australia, Sydney, New South Wales 2052, Australia
| | - Juha T Muhonen
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Australia, Sydney, New South Wales 2052, Australia
| | - Fahd A Mohiyaddin
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Australia, Sydney, New South Wales 2052, Australia
| | - Solomon Freer
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Australia, Sydney, New South Wales 2052, Australia
| | - Fay E Hudson
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Australia, Sydney, New South Wales 2052, Australia
| | - Kohei M Itoh
- School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kanagawa 223-8522, Japan
| | - David N Jamieson
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Jeffrey C McCallum
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Andrew S Dzurak
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Australia, Sydney, New South Wales 2052, Australia
| | - A Morello
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Australia, Sydney, New South Wales 2052, Australia
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6
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Bienfait A, Pla JJ, Kubo Y, Stern M, Zhou X, Lo CC, Weis CD, Schenkel T, Thewalt MLW, Vion D, Esteve D, Julsgaard B, Mølmer K, Morton JJL, Bertet P. Reaching the quantum limit of sensitivity in electron spin resonance. NATURE NANOTECHNOLOGY 2016; 11:253-257. [PMID: 26657787 DOI: 10.1038/nnano.2015.282] [Citation(s) in RCA: 58] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2015] [Accepted: 10/29/2015] [Indexed: 06/05/2023]
Abstract
The detection and characterization of paramagnetic species by electron spin resonance (ESR) spectroscopy is widely used throughout chemistry, biology and materials science, from in vivo imaging to distance measurements in spin-labelled proteins. ESR relies on the inductive detection of microwave signals emitted by the spins into a coupled microwave resonator during their Larmor precession. However, such signals can be very small, prohibiting the application of ESR at the nanoscale (for example, at the single-cell level or on individual nanoparticles). Here, using a Josephson parametric microwave amplifier combined with high-quality-factor superconducting microresonators cooled at millikelvin temperatures, we improve the state-of-the-art sensitivity of inductive ESR detection by nearly four orders of magnitude. We demonstrate the detection of 1,700 bismuth donor spins in silicon within a single Hahn echo with unit signal-to-noise ratio, reduced to 150 spins by averaging a single Carr-Purcell-Meiboom-Gill sequence. This unprecedented sensitivity reaches the limit set by quantum fluctuations of the electromagnetic field instead of thermal or technical noise, which constitutes a novel regime for magnetic resonance. The detection volume of our resonator is ∼ 0.02 nl, and our approach can be readily scaled down further to improve sensitivity, providing a new versatile toolbox for ESR at the nanoscale.
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Affiliation(s)
- A Bienfait
- Quantronics Group, SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette, France
| | - J J Pla
- London Centre for Nanotechnology, University College London, London WC1H 0AH, UK
| | - Y Kubo
- Quantronics Group, SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette, France
| | - M Stern
- Quantronics Group, SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette, France
- Quantum Nanoelectronics Laboratory, BINA, Bar Ilan University, Ramat Gan, Israel
| | - X Zhou
- Quantronics Group, SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette, France
- ISEN Department, Institute of Electronics Microelectronics and Nanotechnology, CNRS UMR 8520, Avenue Poincaré, CS 60069, Villeneuve d'Ascq Cedex 59652, France
| | - C C Lo
- London Centre for Nanotechnology, University College London, London WC1H 0AH, UK
| | - C D Weis
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - T Schenkel
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - M L W Thewalt
- Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
| | - D Vion
- Quantronics Group, SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette, France
| | - D Esteve
- Quantronics Group, SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette, France
| | - B Julsgaard
- Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, Aarhus C DK-8000, Denmark
| | - K Mølmer
- Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, Aarhus C DK-8000, Denmark
| | - J J L Morton
- London Centre for Nanotechnology, University College London, London WC1H 0AH, UK
| | - P Bertet
- Quantronics Group, SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette, France
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7
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Hill CD, Peretz E, Hile SJ, House MG, Fuechsle M, Rogge S, Simmons MY, Hollenberg LCL. A surface code quantum computer in silicon. SCIENCE ADVANCES 2015; 1:e1500707. [PMID: 26601310 PMCID: PMC4646824 DOI: 10.1126/sciadv.1500707] [Citation(s) in RCA: 49] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2015] [Accepted: 07/29/2015] [Indexed: 05/18/2023]
Abstract
The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel-posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited.
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Affiliation(s)
- Charles D. Hill
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Victoria 3010, Australia
| | - Eldad Peretz
- Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Samuel J. Hile
- Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Matthew G. House
- Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Martin Fuechsle
- Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Sven Rogge
- Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Michelle Y. Simmons
- Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Lloyd C. L. Hollenberg
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Victoria 3010, Australia
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8
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Franke DP, Hrubesch FM, Künzl M, Becker HW, Itoh KM, Stutzmann M, Hoehne F, Dreher L, Brandt MS. Interaction of Strain and Nuclear Spins in Silicon: Quadrupolar Effects on Ionized Donors. PHYSICAL REVIEW LETTERS 2015; 115:057601. [PMID: 26274442 DOI: 10.1103/physrevlett.115.057601] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2015] [Indexed: 05/27/2023]
Abstract
The nuclear spins of ionized donors in silicon have become an interesting quantum resource due to their very long coherence times. Their perfect isolation, however, comes at a price, since the absence of the donor electron makes the nuclear spin difficult to control. We demonstrate that the quadrupolar interaction allows us to effectively tune the nuclear magnetic resonance of ionized arsenic donors in silicon via strain and determine the two nonzero elements of the S tensor linking strain and electric field gradients in this material to S(11)=1.5×10(22) V/m2 and S(44)=6×10(22) V/m2. We find a stronger benefit of dynamical decoupling on the coherence properties of transitions subject to first-order quadrupole shifts than on those subject to only second-order shifts and discuss applications of quadrupole physics including mechanical driving of magnetic resonance, cooling of mechanical resonators, and strain-mediated spin coupling.
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Affiliation(s)
- David P Franke
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Florian M Hrubesch
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Markus Künzl
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Hans-Werner Becker
- RUBION, Ruhr-Universität Bochum, Universitätsstraße 150, 44780 Bochum, Germany
| | - Kohei M Itoh
- School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
| | - Martin Stutzmann
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Felix Hoehne
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Lukas Dreher
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Martin S Brandt
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
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9
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Sigillito AJ, Tyryshkin AM, Lyon SA. Anisotropic stark effect and electric-field noise suppression for phosphorus donor qubits in silicon. PHYSICAL REVIEW LETTERS 2015; 114:217601. [PMID: 26066457 DOI: 10.1103/physrevlett.114.217601] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2014] [Indexed: 06/04/2023]
Abstract
We report the use of novel, capacitively terminated coplanar waveguide resonators to measure the quadratic Stark shift of phosphorus donor qubits in Si. We confirm that valley repopulation leads to an anisotropic spin-orbit Stark shift depending on electric and magnetic field orientations relative to the Si crystal. By measuring the linear Stark effect, we estimate the effective electric field due to strain in our samples. We show that in the presence of this strain, electric-field sources of decoherence can be non-negligible. Using our measured values for the Stark shift, we predict magnetic fields for which the spin-orbit Stark effect cancels the hyperfine Stark effect, suppressing decoherence from electric-field noise. We discuss the limitations of these noise-suppression points due to random distributions of strain and propose a method for overcoming them.
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Affiliation(s)
- A J Sigillito
- Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
| | - A M Tyryshkin
- Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
| | - S A Lyon
- Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
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10
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Hrubesch FM, Braunbeck G, Voss A, Stutzmann M, Brandt MS. Broadband electrically detected magnetic resonance using adiabatic pulses. JOURNAL OF MAGNETIC RESONANCE (SAN DIEGO, CALIF. : 1997) 2015; 254:62-69. [PMID: 25828243 DOI: 10.1016/j.jmr.2015.02.010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2014] [Revised: 02/17/2015] [Accepted: 02/18/2015] [Indexed: 06/04/2023]
Abstract
We present a broadband microwave setup for electrically detected magnetic resonance (EDMR) based on microwave antennae with the ability to apply arbitrarily shaped pulses for the excitation of electron spin resonance (ESR) and nuclear magnetic resonance (NMR) of spin ensembles. This setup uses non-resonant stripline structures for on-chip microwave delivery and is demonstrated to work in the frequency range from 4 MHz to 18 GHz. π pulse times of 50 ns and 70 μs for ESR and NMR transitions, respectively, are achieved with as little as 100 mW of microwave or radiofrequency power. The use of adiabatic pulses fully compensates for the microwave magnetic field inhomogeneity of the stripline antennae, as demonstrated with the help of BIR4 unitary rotation pulses driving the ESR transition of neutral phosphorus donors in silicon and the NMR transitions of ionized phosphorus donors as detected by electron nuclear double resonance (ENDOR).
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Affiliation(s)
- F M Hrubesch
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.
| | - G Braunbeck
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.
| | - A Voss
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.
| | - M Stutzmann
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.
| | - M S Brandt
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.
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11
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Laucht A, Muhonen JT, Mohiyaddin FA, Kalra R, Dehollain JP, Freer S, Hudson FE, Veldhorst M, Rahman R, Klimeck G, Itoh KM, Jamieson DN, McCallum JC, Dzurak AS, Morello A. Electrically controlling single-spin qubits in a continuous microwave field. SCIENCE ADVANCES 2015; 1:e1500022. [PMID: 26601166 PMCID: PMC4640634 DOI: 10.1126/sciadv.1500022] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2015] [Accepted: 03/14/2015] [Indexed: 05/24/2023]
Abstract
Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single (31)P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electric field, which induces a Stark shift of the qubit energies. This method, known as A-gate control, preserves the excellent coherence times and gate fidelities of isolated spins, and can be extended to arbitrarily many qubits without requiring multiple microwave sources.
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Affiliation(s)
- Arne Laucht
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Juha T. Muhonen
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Fahd A. Mohiyaddin
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Rachpon Kalra
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Juan P. Dehollain
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Solomon Freer
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Fay E. Hudson
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Menno Veldhorst
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Rajib Rahman
- Network for Computational Nanotechnology, Purdue University, West Lafayette, IN 47907, USA
| | - Gerhard Klimeck
- Network for Computational Nanotechnology, Purdue University, West Lafayette, IN 47907, USA
| | - Kohei M. Itoh
- School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
| | - David N. Jamieson
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Jeffrey C. McCallum
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Andrew S. Dzurak
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Andrea Morello
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
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12
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Wolfowicz G, Urdampilleta M, Thewalt MLW, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Morton JJL. Conditional control of donor nuclear spins in silicon using stark shifts. PHYSICAL REVIEW LETTERS 2014; 113:157601. [PMID: 25375741 DOI: 10.1103/physrevlett.113.157601] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2014] [Indexed: 06/04/2023]
Abstract
Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors in isotopically purified silicon-28. We then demonstrate two different methods to use a dc electric field combined with an applied resonant radio-frequency (rf) field to conditionally control donor nuclear spins. The first method combines an electric-field induced conditional phase gate with standard rf pulses, and the second one simply detunes the spins off resonance. Finally, we consider different strategies to reduce the effect of electric field inhomogeneities and obtain above 90% process fidelities.
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Affiliation(s)
- Gary Wolfowicz
- London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom and Department of Materials, Oxford University, Oxford OX1 3PH, United Kingdom
| | - Matias Urdampilleta
- London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom
| | - Mike L W Thewalt
- Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
| | - Helge Riemann
- Institute for Crystal Growth, Max-Born Strasse 2, D-12489 Berlin, Germany
| | | | - Peter Becker
- Physikalisch-Technische Bundesanstalt, D-38116 Braunschweig, Germany
| | | | - John J L Morton
- London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom and Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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13
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Saeedi K, Simmons S, Salvail JZ, Dluhy P, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Morton JJL, Thewalt MLW. Room-temperature quantum bit storage exceeding 39 minutes using ionized donors in silicon-28. Science 2013; 342:830-3. [PMID: 24233718 DOI: 10.1126/science.1239584] [Citation(s) in RCA: 288] [Impact Index Per Article: 26.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
Quantum memories capable of storing and retrieving coherent information for extended times at room temperature would enable a host of new technologies. Electron and nuclear spin qubits using shallow neutral donors in semiconductors have been studied extensively but are limited to low temperatures (≲10 kelvin); however, the nuclear spins of ionized donors have the potential for high-temperature operation. We used optical methods and dynamical decoupling to realize this potential for an ensemble of phosphorous-31 donors in isotopically purified silicon-28 and observed a room-temperature coherence time of over 39 minutes. We further showed that a coherent spin superposition can be cycled from 4.2 kelvin to room temperature and back, and we report a cryogenic coherence time of 3 hours in the same system.
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Affiliation(s)
- Kamyar Saeedi
- Department of Physics, Simon Fraser University, Burnaby, BC, V5A 1S6, Canada
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14
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Petretto G, Debernardi A, Fanciulli M. Donor wave functions delocalization in silicon nanowires: the peculiar [011] orientation. NANO LETTERS 2013; 13:4963-4968. [PMID: 23984940 DOI: 10.1021/nl403004u] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
The localization of the donor electron wave function can be of key importance in various silicon applications, since for example it determines the interactions between neighboring donors. Interestingly, the physical confinement of the electrons in quasi-one-dimensional nanostructures, like silicon nanowires, noticeably affects this property. Using fully ab initio calculations, we show that the delocalization of the donor electron wave function along the axis of a nanowire is much greater in [011] oriented nanowires for phosphorus and selenium donors. We also demonstrate that its value can be controlled by applying a compressive or tensile uniaxial strain. Finally, we discuss the implications of these features from both an experimental and a theoretical point of view.
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Affiliation(s)
- Guido Petretto
- Laboratorio MDM, IMM-CNR , via C. Olivetti, 2 I-20864 Agrate Brianza (MB), Italy
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15
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Verduijn J, Tettamanzi GC, Rogge S. Wave function control over a single donor atom. NANO LETTERS 2013; 13:1476-1480. [PMID: 23514349 DOI: 10.1021/nl304518v] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Single donor atoms in semiconductor nanostructures are attractive basic components for quantum device applications. In this work, we demonstrate the ability to manipulate the wave function of a single donor electron with an electric field. The deformation of the wave function is probed by the tunnel current which, furthermore, allows for the determination of the location of the atom in the device. This experiment demonstrates the control necessary for the utilization of single donors in quantum electronics.
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Affiliation(s)
- J Verduijn
- Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, NSW 2052, Australia.
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16
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Yan B, Rurali R, Gali A. Ab initio study of phosphorus donors acting as quantum bits in silicon nanowires. NANO LETTERS 2012; 12:3460-3465. [PMID: 22694292 DOI: 10.1021/nl300816t] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
A phosphorus (P) donor has been extensively studied in bulk Si to realize the concept of Kane quantum computers. In most cases the quantum bit was realized as an entanglement between the donor electron spin and the nonzero nuclei spin of the donor impurity mediated by the hyperfine coupling between them. The donor ionization energies and the spin-lattice relaxation time limited the temperatures to a few kelvin in these experiments. Here, we demonstrate by means of ab initio density functional theory calculations that quantum confinement in thin Si nanowires (SiNWs) results in (i) larger excitation energies of donor impurity and (ii) a sensitive manipulation of the hyperfine coupling by external electric field. We propose that these features may allow to realize the quantum bit (qubit) experiments at elevated temperatures with a strength of electric fields applicable in current field-effect transistor technology. We also show that the strength of quantum confinement and the presence of strain induced by the surface termination may significantly affect the ground and excited states of the donors in thin SiNWs, possibly allowing an optical read-out of the electron spin.
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Affiliation(s)
- Binghai Yan
- Bremen Center for Computational Materials Science, Universität Bremen, Am Fallturm 1, 28359 Bremen, Germany.
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17
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Dreher L, Hoehne F, Stutzmann M, Brandt MS. Nuclear spins of ionized phosphorus donors in silicon. PHYSICAL REVIEW LETTERS 2012; 108:027602. [PMID: 22324708 DOI: 10.1103/physrevlett.108.027602] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2011] [Indexed: 05/31/2023]
Abstract
We demonstrate the coherent control and electrical readout of ionized phosphorus donor nuclear spins in (nat)Si. By combining time-programed optical excitation with coherent electron spin manipulation, we selectively ionize the donors depending on their nuclear spin state, exploiting a spin-dependent recombination process at the Si/SiO(2) interface, and find a nuclear spin coherence time of 18 ms for the ionized donors. The presented technique allows for spectroscopy of ionized-donor nuclear spins and enhances the sensitivity of electron nuclear double resonance to a level of 3000 nuclear spins.
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Affiliation(s)
- Lukas Dreher
- Walter Schottky Institut, Technische Universität München, Garching, Germany.
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18
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Soykal ÖO, Ruskov R, Tahan C. Sound-based analogue of cavity quantum electrodynamics in silicon. PHYSICAL REVIEW LETTERS 2011; 107:235502. [PMID: 22182098 DOI: 10.1103/physrevlett.107.235502] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2011] [Indexed: 05/31/2023]
Abstract
A quantum mechanical superposition of a long-lived, localized phonon and a matter excitation is described. We identify a realization in strained silicon: a low-lying donor transition (P or Li) driven solely by acoustic phonons at wavelengths where high-Q phonon cavities can be built. This phonon-matter resonance is shown to enter the strongly coupled regime where the "vacuum" Rabi frequency exceeds the spontaneous phonon emission into noncavity modes, phonon leakage from the cavity, and phonon anharmonicity and scattering. We introduce a micropillar distributed Bragg reflector Si/Ge cavity, where Q≃10(5)-10(6) and mode volumes V≲25λ(3) are reachable. These results indicate that single or many-body devices based on these systems are experimentally realizable.
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Affiliation(s)
- Ö O Soykal
- Laboratory for Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740, USA
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19
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Abstract
Quantum computers hold the promise of massive performance enhancements across a range of applications, from cryptography and databases to revolutionary scientific simulation tools. Such computers would make use of the same quantum mechanical phenomena that pose limitations on the continued shrinking of conventional information processing devices. Many of the key requirements for quantum computing differ markedly from those of conventional computers. However, silicon, which plays a central part in conventional information processing, has many properties that make it a superb platform around which to build a quantum computer.
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Klotz F, Huebl H, Heiss D, Klein K, Finley JJ, Brandt MS. Coplanar stripline antenna design for optically detected magnetic resonance on semiconductor quantum dots. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2011; 82:074707. [PMID: 21806214 DOI: 10.1063/1.3608110] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We report on the development and testing of a coplanar stripline antenna that is designed for integration in a magneto-photoluminescence experiment to allow coherent control of individual electron spins confined in single self-assembled semiconductor quantum dots. We discuss the design criteria for such a structure which is multi-functional in the sense that it serves not only as microwave delivery but also as electrical top gate and shadow mask for the single quantum dot spectroscopy. We present test measurements on hydrogenated amorphous silicon, demonstrating electrically detected magnetic resonance using the in-plane component of the oscillating magnetic field created by the coplanar stripline antenna necessary due to the particular geometry of the quantum dot spectroscopy. From reference measurements using a commercial electron spin resonance setup in combination with finite element calculations simulating the field distribution in the structure, we obtain a magnetic field of 0.12 mT at the position where the quantum dots would be integrated into the device. The corresponding π-pulse time of ≈0.5 μs meets the requirements set by the high sensitivity optical spin read-out scheme developed for the quantum dot.
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Affiliation(s)
- F Klotz
- Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany
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