Probing single-charge fluctuations at a GaAs/AlAs interface using laser spectroscopy on a nearby InGaAs quantum dot

Monolithic Polarizing Circular Dielectric Gratings on Bulk Substrates for Improved Photon Collection from InAs Quantum Dots

III-V semiconductor quantum dots (QDs) are near-ideal and versatile single-photon sources. Because of the capacity for monolithic integration with photonic structures as well as optoelectronic and optomechanical systems, they are proving useful in an increasingly broad application space. Here, we develop monolithic circular dielectric gratings on bulk substrates - as opposed to suspended or wafer-bonded substrates - for greatly improved photon collection from InAs quantum dots. The structures utilize a unique two-tiered distributed Bragg reflector (DBR) structure for vertical electric field confinement over a broad angular range. Opposing "openings" in the cavities induce strongly polarized QD luminescence without harming collection efficiencies. We describe how measured enhancements depend on the choice of collection optics. This is important to consider when evaluating the performance of any photonic structure that concentrates farfield emission intensity. Our cavity designs are useful for integrating QDs with other quantum systems that require bulk substrates, such as surface acoustic wave phonons.

Ideal refocusing of an optically active spin qubit under strong hyperfine interactions

Combining highly coherent spin control with efficient light-matter coupling offers great opportunities for quantum communication and computing. Optically active semiconductor quantum dots have unparalleled photonic properties but also modest spin coherence limited by their resident nuclei. The nuclear inhomogeneity has thus far bound all dynamical decoupling measurements to a few microseconds. Here, we eliminate this inhomogeneity using lattice-matched GaAs-AlGaAs quantum dot devices and demonstrate dynamical decoupling of the electron spin qubit beyond 0.113(3) ms. Leveraging the 99.30(5)% visibility of our optical π-pulse gates, we use up to N_π = 81 decoupling pulses and find a coherence time scaling of [Formula: see text]. This scaling manifests an ideal refocusing of strong interactions between the electron and the nuclear spin ensemble, free of extrinsic noise, which holds the promise of lifetime-limited spin coherence. Our findings demonstrate that the most punishing material science challenge for such quantum dot devices has a remedy and constitute the basis for highly coherent spin-photon interfaces.

Restoring the Coherence of Quantum Emitters through Optically Driven Motional Narrowing Forces

Motional narrowing is a phenomenon by which a quantum state can be entangled with a noisy environment and still retain its intrinsic coherence. Using two optically induced motional forces driving the environmental electrical field amplitude and fluctuations, we present a compelling illustration of the effects of motional narrowing on the energy, line shape, and line width of a single quantum emitter, a Te₂ molecule embedded in ZnSe, subject to spectral diffusion. Motional narrowing is achieved in several regimes, irrespectively of the inhomogeneous disorder initially present and the charge reservoir state sourcing the field. The optimal coherence limit set by the radiative rate can be approached by accelerating spectral diffusion into the THz regime. Motional narrowing applies to any quantum systems for which environmental fluctuations can be deliberately accelerated and alleviates the need for perfected materials and devices.

Optical read-out of Coulomb staircases in a moiré superlattice via trapped interlayer trions

Moiré patterns with a superlattice potential can be formed by vertically stacking two layered materials with a relative twist or lattice constant mismatch. In transition metal dichalcogenide-based systems, the moiré potential landscape can trap interlayer excitons (IXs) at specific atomic registries. Here, we report that spatially isolated trapped IXs in a molybdenum diselenide/tungsten diselenide heterobilayer device provide a sensitive optical probe of carrier filling in their immediate environment. By mapping the spatial positions of individual trapped IXs, we are able to spectrally track the emitters as the moiré lattice is filled with excess carriers. Upon initial doping of the heterobilayer, neutral trapped IXs form charged IXs (IX trions) uniformly with a binding energy of ~7 meV. Upon further doping, the empty superlattice sites sequentially fill, creating a Coulomb staircase: stepwise changes in the IX trion emission energy due to Coulomb interactions with carriers at nearest-neighbour moiré sites. This non-invasive, highly local technique can complement transport and non-local optical sensing techniques to characterize Coulomb interaction energies, visualize charge correlated states, or probe local disorder in a moiré superlattice.

Investigation of the Stark Effect on a Centrosymmetric Quantum Emitter in Diamond

Quantum emitters in diamond are leading optically accessible solid-state qubits. Among these, Group IV-vacancy defect centers have attracted great interest as coherent and stable optical interfaces to long-lived spin states. Theory indicates that their inversion symmetry provides first-order insensitivity to stray electric fields, a common limitation for optical coherence in any host material. Here we experimentally quantify this electric field dependence via an external electric field applied to individual tin-vacancy (SnV) centers in diamond. These measurements reveal that the permanent electric dipole moment and polarizability are at least 4 orders of magnitude smaller than for the diamond nitrogen vacancy (NV) centers, representing the first direct measurement of the inversion symmetry protection of a Group IV defect in diamond. Moreover, we show that by modulating the electric-field-induced dipole we can use the SnV as a nanoscale probe of local electric field noise, and we employ this technique to highlight the effect of spectral diffusion on the SnV.

GaAs surface passivation for InAs/GaAs quantum dot based nanophotonic devices

Several passivation techniques are developed and compared in terms of their ability to preserve the optical properties of close-to-surface InAs/GaAs quantum dots (QDs). In particular, the influence of N-passivation by hydrazine chemical treatment, N-passivation by hydrazine followed by atomic layer deposition (ALD) of AlO _x and use of AlN _x deposited by plasma-enhanced ALD are reported. The effectiveness of the passivation is benchmarked by measuring the emission linewidths and decay rates of photo-carriers for the near-surface QDs. All three passivation mechanisms resulted in reducing the oxidation of Ga and As atoms at the GaAs surface and consequently in enhancing the room-temperature photoluminescence (PL) intensity. However, long-term stability of the passivation effect is exhibited only by the hydrazine + AlO _x process and more significantly by the AlN _x method. Moreover, in contrast to the results obtained from hydrazine-based methods, the AlN _x passivation strongly reduces the spectral diffusion of the QD exciton lines caused by charge fluctuations at the GaAs surface. The AlN _x passivation is found to reduce the surface recombination velocity by three orders of magnitude (corresponding to an increase of room-temperature PL signal by ∼1030 times). The reduction of surface recombination velocity is demonstrated on surface-sensitive GaAs (100) and the passivating effect is stable for more than one year. This effective method of passivation, coupled with its stability in time, is extremely promising for practical device applications such as quantum light sources based on InAs/GaAs QDs positioned in small-volume photonic cavities and hence in the proximity of GaAs-air interface.

Fundamental Limits to Coherent Photon Generation with Solid-State Atomlike Transitions

Coherent generation of indistinguishable single photons is crucial for many quantum communication and processing protocols. Solid-state realizations of two-level atomic transitions or three-level spin-Λ systems offer significant advantages over their atomic counterparts for this purpose, albeit decoherence can arise due to environmental couplings. One popular approach to mitigate dephasing is to operate in the weak-excitation limit, where the excited-state population is minimal and coherently scattered photons dominate over incoherent emission. Here we probe the coherence of photons produced using two-level and spin-Λ solid-state systems. We observe that the coupling of the atomiclike transitions to the vibronic transitions of the crystal lattice is independent of the driving strength, even for detuned excitation using the spin-Λ configuration. We apply a polaron master equation to capture the non-Markovian dynamics of the vibrational manifolds. These results provide insight into the fundamental limitations to photon coherence from solid-state quantum emitters.

Light Scattering from Solid-State Quantum Emitters: Beyond the Atomic Picture

Coherent scattering of light by a single quantum emitter is a fundamental process at the heart of many proposed quantum technologies. Unlike atomic systems, solid-state emitters couple to their host lattice by phonons. Using a quantum dot in an optical nanocavity, we resolve these interactions in both time and frequency domains, going beyond the atomic picture to develop a comprehensive model of light scattering from solid-state emitters. We find that even in the presence of a low-Q cavity with high Purcell enhancement, phonon coupling leads to a sideband that is completely insensitive to excitation conditions and to a nonmonotonic relationship between laser detuning and coherent fraction, both of which are major deviations from atomlike behavior.

On-Demand Semiconductor Source of Entangled Photons Which Simultaneously Has High Fidelity, Efficiency, and Indistinguishability

An outstanding goal in quantum optics and scalable photonic quantum technology is to develop a source that each time emits one and only one entangled photon pair with simultaneously high entanglement fidelity, extraction efficiency, and photon indistinguishability. By coherent two-photon excitation of a single InGaAs quantum dot coupled to a circular Bragg grating bull's-eye cavity with a broadband high Purcell factor of up to 11.3, we generate entangled photon pairs with a state fidelity of 0.90(1), pair generation rate of 0.59(1), pair extraction efficiency of 0.62(6), and photon indistinguishability of 0.90(1) simultaneously. Our work will open up many applications in high-efficiency multiphoton experiments and solid-state quantum repeaters.

Direct Measurement of Hyperfine Shifts and Radio Frequency Manipulation of Nuclear Spins in Individual CdTe/ZnTe Quantum Dots

We achieve direct detection of electron hyperfine shifts in individual CdTe/ZnTe quantum dots. For the previously inaccessible regime of strong magnetic fields B_{z}≳0.1  T, we demonstrate robust polarization of a few-hundred-particle nuclear spin bath, with an optical initialization time of ∼1  ms and polarization lifetime exceeding ∼1  s. Nuclear magnetic resonance spectroscopy of individual dots reveals strong electron-nuclear interactions characterized by Knight fields |B_{e}|≳50  mT, an order of magnitude stronger than in III-V semiconductor quantum dots. Our studies confirm II-VI semiconductor quantum dots as a promising platform for hybrid electron-nuclear spin qubit registers, combining the excellent optical properties comparable to III-V dots and the dilute nuclear spin environment similar to group-IV semiconductors.

Coherent single-photon emission from colloidal lead halide perovskite quantum dots

Chemically made colloidal semiconductor quantum dots have long been proposed as scalable and color-tunable single emitters in quantum optics, but they have typically suffered from prohibitively incoherent emission. We now demonstrate that individual colloidal lead halide perovskite quantum dots (PQDs) display highly efficient single-photon emission with optical coherence times as long as 80 picoseconds, an appreciable fraction of their 210-picosecond radiative lifetimes. These measurements suggest that PQDs should be explored as building blocks in sources of indistinguishable single photons and entangled photon pairs. Our results present a starting point for the rational design of lead halide perovskite–based quantum emitters that have fast emission, wide spectral tunability, and scalable production and that benefit from the hybrid integration with nanophotonic components that has been demonstrated for colloidal materials.

Effects of electrostatic environment on the electrically triggered production of entangled photon pairs from droplet epitaxial quantum dots

Entangled photon pair generation is a crucial task for development of quantum information based technologies, and production of entangled pairs by biexciton cascade decays in semiconductor quantum dots is so far one of the most advanced techniques to achieve it. However, its scalability toward massive implementation requires further understanding and better tuning mechanisms to suppress the fine structure splitting between polarized exciton states, which persists as a major obstacle for entanglement generation from most quantum dot samples. In this work, the influence of electrostatic environment arising from electrically biased electrodes and/or charged impurities on the fine structure splitting of GaAs/AlGaAs droplet epitaxial quantum dots is studied, by means of numerical simulations considering a realistic quantum dot confining potential and electron-hole exchange interaction within a multiband k · p framework. We find that reduction of the fine structure splitting can be substantially optimized by tilting the field and seeding impurities along the droplet elongation axis. Furthermore, our results provide evidence of how the presence of charged impurities and in-plane bias components, may account for different degrees of splitting manipulation in dots with similar shape, size and growth conditions.

Photon Noise Suppression by a Built-in Feedback Loop

Visionary quantum photonic networks need transform-limited single photons on demand. Resonance fluorescence on a quantum dot provides the access to a solid-state single photon source, where the environment is unfortunately the source of spin and charge noise that leads to fluctuations of the emission frequency and destroys the needed indistinguishability. We demonstrate a built-in stabilization approach for the photon stream, which relies solely on charge carrier dynamics of a two-dimensional hole gas inside a micropillar structure. The hole gas is fed by hole tunneling from field-ionized excitons and influences the energetic position of the excitonic transition by changing the local electric field at the position of the quantum dot. The standard deviation of the photon noise is suppressed by nearly 50% (noise power reduction of 6 dB) and it works in the developed micropillar structure for frequencies up to 1 kHz. This built-in feedback loop represents an easy way for photon noise suppression in large arrays of single photon emitters and promises to reach higher bandwidth by device optimization.

Environmental Electrometry with Luminescent Carbon Nanotubes

We demonstrate that localized excitons in luminescent carbon nanotubes can be utilized to study electrostatic fluctuations in the nanotube environment with sensitivity down to the elementary charge. By monitoring the temporal evolution of the cryogenic photoluminescence from individual carbon nanotubes grown on silicon oxide and hexagonal boron nitride, we characterize the dynamics of charge trap defects for both dielectric supports. We find a one order of magnitude reduction in the photoluminescence spectral wandering for nanotubes on extended atomically flat terraces of hexagonal boron nitride. For nanotubes on hexagonal boron nitride with pronounced spectral fluctuations, our analysis suggests proximity to terrace ridges where charge fluctuators agglomerate to exhibit areal densities exceeding those of silicon oxide. Our results establish carbon nanotubes as sensitive probes of environmental charge fluctuations and highlight their potential for applications in electrometric nanodevices with all-optical readout.

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

The ability to perform simultaneous resonant excitation and fluorescence detection is important for quantum optical measurements of quantum dots (QDs). Resonant excitation without fluorescence detection - for example, a differential transmission measurement - can determine some properties of the emitting system, but does not allow applications or measurements based on the emitted photons. For example, the measurement of photon correlations, observation of the Mollow triplet, and realization of single photon sources all require collection of the fluorescence. Incoherent excitation with fluorescence detection - for example, above band-gap excitation - can be used to create single photon sources, but the disturbance of the environment due to the excitation reduces the indistinguishability of the photons. Single photon sources based on QDs will have to be resonantly excited to have high photon indistinguishability, and simultaneous collection of the photons will be necessary to make use of them. We demonstrate a method to resonantly excite a single QD embedded in a planar cavity by coupling the excitation beam into this cavity from the cleaved face of the sample while collecting the fluorescence along the sample's surface normal direction. By carefully matching the excitation beam to the waveguide mode of the cavity, the excitation light can couple into the cavity and interact with the QD. The scattered photons can couple to the Fabry-Perot mode of the cavity and escape in the surface normal direction. This method allows complete freedom in the detection polarization, but the excitation polarization is restricted by the propagation direction of the excitation beam. The fluorescence from the wetting layer provides a guide to align the collection path with respect to the excitation beam. The orthogonality of the excitation and detection modes enables resonant excitation of a single QD with negligible laser scattering background.

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

Optical control of spectral diffusion with single InAs quantum dots in a silver-embedded nanocone

We study the spectral diffusion in a single epitaxial InAs quantum dot placed in a silver-embedded nanocone structure. Making use of a series of stroboscopic detection of optical transitions, we demonstrate the temporal fluctuations in peak energy of photoluminescence. In particular, the photoluminescence fluctuations can be effectively suppressed by strong illumination. By analyzing the photon statistics, we find that the dot emission exhibits stable non-classical nature with the strong anti-bunching behavior after this stabilization.

Decoupling a hole spin qubit from the nuclear spins

A huge effort is underway to develop semiconductor nanostructures as low-noise hosts for qubits. The main source of dephasing of an electron spin qubit in a GaAs-based system is the nuclear spin bath. A hole spin may circumvent the nuclear spin noise. In principle, the nuclear spins can be switched off for a pure heavy-hole spin. In practice, it is unknown to what extent this ideal limit can be achieved. A major hindrance is that p-type devices are often far too noisy. We investigate here a single hole spin in an InGaAs quantum dot embedded in a new generation of low-noise p-type device. We measure the hole Zeeman energy in a transverse magnetic field with 10 neV resolution by dark-state spectroscopy as we create a large transverse nuclear spin polarization. The hole hyperfine interaction is highly anisotropic: the transverse coupling is <1% of the longitudinal coupling. For unpolarized, randomly fluctuating nuclei, the ideal heavy-hole limit is achieved down to nanoelectronvolt energies; equivalently dephasing times up to a microsecond. The combination of large and strong optical dipole makes the single hole spin in a GaAs-based device an attractive quantum platform.

A sensitive electrometer based on a Rydberg atom in a Schrödinger-cat state

Fundamental quantum fluctuations caused by the Heisenberg principle limit measurement precision. If the uncertainty is distributed equally between conjugate variables of the meter system, the measurement precision cannot exceed the standard quantum limit. When the meter is a large angular momentum, going beyond the standard quantum limit requires non-classical states such as squeezed states or Schrödinger-cat-like states. However, the metrological use of the latter has been so far restricted to meters with a relatively small total angular momentum because the experimental preparation of these non-classical states is very challenging. Here we report a measurement of an electric field based on an electrometer consisting of a large angular momentum (quantum number J ≈ 25) carried by a single atom in a high-energy Rydberg state. We show that the fundamental Heisenberg limit can be approached when the Rydberg atom undergoes a non-classical evolution through Schrödinger-cat states. Using this method, we reach a single-shot sensitivity of 1.2 millivolts per centimetre for a 100-nanosecond interaction time, corresponding to 30 microvolts per centimetre per square root hertz at our 3 kilohertz repetition rate. This highly sensitive, non-invasive space- and time-resolved field measurement extends the realm of electrometric techniques and could have important practical applications: detection of individual electrons in mesoscopic devices at a distance of about 100 micrometres with a megahertz bandwidth is within reach.

Auger Recombination in Self-Assembled Quantum Dots: Quenching and Broadening of the Charged Exciton Transition

In quantum dots (QDs), the Auger recombination is a nonradiative process in which the electron-hole recombination energy is transferred to an additional carrier. It has been studied mostly in colloidal QDs, where the Auger recombination time is in the picosecond range and efficiently quenches the light emission. In self-assembled QDs, on the other hand, the influence of Auger recombination on the optical properties is in general neglected, assuming that it is masked by other processes such as spin and charge fluctuations. Here, we use time-resolved resonance fluorescence to analyze the Auger recombination and its influence on the optical properties of a single self-assembled QD. From excitation-power-dependent measurements, we find a long Auger recombination time of about 500 ns and a quenching of the trion transition by about 80%. Furthermore, we observe a broadening of the trion transition line width by up to a factor of 2. With a model based on rate equations, we are able to identify the interplay between tunneling and Auger rate as the underlying mechanism for the reduced intensity and the broadening of the line width. This demonstrates that self-assembled QDs can serve as an ideal model system to study how the charge recapture process, given by the band-structure surrounding the confined carriers, influences the Auger process. Our findings are not only relevant for improving the emission properties of colloidal QD-based emitters and dyes, which have recently entered the consumer market, but also of interest for more visionary applications, such as quantum information technologies, based on self-assembled quantum dots.

Exploring Dephasing of a Solid-State Quantum Emitter via Time- and Temperature-Dependent Hong-Ou-Mandel Experiments

We probe the indistinguishability of photons emitted by a semiconductor quantum dot (QD) via time- and temperature-dependent two-photon interference (TPI) experiments. An increase in temporal separation between consecutive photon emission events reveals a decrease in TPI visibility on a nanosecond time scale, theoretically described by a non-Markovian noise process in agreement with fluctuating charge traps in the QD's vicinity. Phonon-induced pure dephasing results in a decrease in TPI visibility from (96±4)% at 10 K to a vanishing visibility at 40 K. In contrast to Michelson-type measurements, our experiments provide direct access to the time-dependent coherence of a quantum emitter on a nanosecond time scale.

On-Demand Single Photons with High Extraction Efficiency and Near-Unity Indistinguishability from a Resonantly Driven Quantum Dot in a Micropillar

Scalable photonic quantum technologies require on-demand single-photon sources with simultaneously high levels of purity, indistinguishability, and efficiency. These key features, however, have only been demonstrated separately in previous experiments. Here, by s-shell pulsed resonant excitation of a Purcell-enhanced quantum dot-micropillar system, we deterministically generate resonance fluorescence single photons which, at π pulse excitation, have an extraction efficiency of 66%, single-photon purity of 99.1%, and photon indistinguishability of 98.5%. Such a single-photon source for the first time combines the features of high efficiency and near-perfect levels of purity and indistinguishabilty, and thus opens the way to multiphoton experiments with semiconductor quantum dots.

Transform-limited single photons from a single quantum dot

Developing a quantum photonics network requires a source of very-high-fidelity single photons. An outstanding challenge is to produce a transform-limited single-photon emitter to guarantee that single photons emitted far apart in the time domain are truly indistinguishable. This is particularly difficult in the solid-state as the complex environment is the source of noise over a wide bandwidth. A quantum dot is a robust, fast, bright and narrow-linewidth emitter of single photons; layer-by-layer growth and subsequent nano-fabrication allow the electronic and photonic states to be engineered. This represents a set of features not shared by any other emitter but transform-limited linewidths have been elusive. Here, we report transform-limited linewidths measured on second timescales, primarily on the neutral exciton but also on the charged exciton close to saturation. The key feature is control of the nuclear spins, which dominate the exciton dephasing via the Overhauser field.

Photons emitted from a quantum dot typically have slightly different frequencies owing to various sources of noise. Here, the authors suppress the noise, notably the noise arising from the nuclear spins, and demonstrate single-photon emission with a transform-limited optical linewidth.

Defect-induced photoluminescence blinking of single epitaxial InGaAs quantum dots

Here we report two types of defect-induced photoluminescence (PL) blinking behaviors observed in single epitaxial InGaAs quantum dots (QDs). In the first type of PL blinking, the "off" period is caused by the trapping of hot electrons from the higher-lying excited state (absorption state) to the defect site so that its PL rise lifetime is shorter than that of the "on" period. For the "off" period in the second type of PL blinking, the electrons relax from the first excited state (emission state) into the defect site, leading to a shortened PL decay lifetime compared to that of the "on" period. This defect-induced exciton quenching in epitaxial QDs, previously demonstrated also in colloidal nanocrystals, confirms that these two important semiconductor nanostructures could share the same PL blinking mechanism.

Waveguide coupled resonance fluorescence from on-chip quantum emitter

Resonantly driven quantum emitters offer a very promising route to obtain highly coherent sources of single photons required for applications in quantum information processing (QIP). Realizing this for on-chip scalable devices would be important for scientific advances and practical applications in the field of integrated quantum optics. Here we report on-chip quantum dot (QD) resonance fluorescence (RF) efficiently coupled into a single-mode waveguide, a key component of a photonic integrated circuit, with a negligible resonant laser background and show that the QD coherence is enhanced by more than a factor of 4 compared to off-resonant excitation. Single-photon behavior is confirmed under resonant excitation, and fast fluctuating charge dynamics are revealed in autocorrelation g((2)) measurements. The potential for triggered operation is verified in pulsed RF. These results pave the way to a novel class of integrated quantum-optical devices for on-chip quantum information processing with embedded resonantly driven quantum emitters.

Temperature-dependent Mollow triplet spectra from a single quantum dot: Rabi frequency renormalization and sideband linewidth insensitivity

We investigate temperature-dependent resonance fluorescence spectra obtained from a single self-assembled quantum dot. A decrease of the Mollow triplet sideband splitting is observed with increasing temperature, an effect we attribute to a phonon-induced renormalization of the driven dot Rabi frequency. We also present first evidence for a nonperturbative regime of phonon coupling, in which the expected linear increase in sideband linewidth as a function of temperature is canceled by the corresponding reduction in Rabi frequency. These results indicate that dephasing in semiconductor quantum dots may be less sensitive to changes in temperature than expected from a standard weak-coupling analysis of phonon effects.

Coherent magnetic resonance of nanocrystal quantum-dot luminescence as a window to blinking mechanisms

Blinking of colloidal nanocrystal quantum dots, random intermittency in the stream of photons emitted by single particles, has long commanded the curiosity of researchers. Why does the particle suddenly shut off, and what are the pathways to quench emission? Single-particle microscopy is not the only way to approach these fundamental questions on the interaction of light and matter: time-domain sub-ensemble spectroscopies can also yield relevant information on microscopic electronic processes. We illustrate recent advances in pulsed optically detected magnetic resonance and highlight the conceptual relevance to unravelling mechanisms controlling intermittency on the single-particle level. Magnetic resonance reveals two distinct luminescence quenching channels, which appear to be related to those previously surmised from single-particle studies: a trapped charge-separated state in which the exciton is quenched by dissociation and the particle remains neutral; and a charged state of the particle in which spin-dependent Auger recombination quenches luminescence.

Full counting statistics of quantum dot resonance fluorescence

The electronic energy levels and optical transitions of a semiconductor quantum dot are subject to dynamics within the solid-state environment. In particular, fluctuating electric fields due to nearby charge traps or other quantum dots shift the transition frequencies via the Stark effect. The environment dynamics are mapped directly onto the fluorescence under resonant excitation and diminish the prospects of quantum dots as sources of indistinguishable photons in optical quantum computing. Here, we present an analysis of resonance fluorescence fluctuations based on photon counting statistics which captures the underlying time-averaged electric field fluctuations of the local environment. The measurement protocol avoids dynamic feedback on the electric environment and the dynamics of the quantum dot's nuclear spin bath by virtue of its resonant nature and by keeping experimental control parameters such as excitation frequency and external fields constant throughout. The method introduced here is experimentally undemanding.

Optical spin noise of a single hole spin localized in an (InGa)As quantum dot

We advance spin noise spectroscopy to the ultimate limit of single spin detection. This technique enables the measurement of the spin dynamic of a single heavy hole localized in a flat (InGa)As quantum dot. Magnetic field and light intensity dependent studies reveal even at low magnetic fields a strong magnetic field dependence of the longitudinal heavy hole spin relaxation time with an extremely long T1 of ≥180  μs at 31 mT and 5 K. The wavelength dependence of the spin noise power discloses for finite light intensities an inhomogeneous single quantum dot spin noise spectrum which is explained by charge fluctuations in the direct neighborhood of the quantum dot. The charge fluctuations are corroborated by the distinct intensity dependence of the effective spin relaxation rate.

Two-color single-photon emission from InAs quantum dots: toward logic information management using quantum light

In this work, we propose the use of the Hanbury-Brown and Twiss interferometric technique and a switchable two-color excitation method for evaluating the exciton and noncorrelated electron-hole dynamics associated with single photon emission from indium arsenide (InAs) self-assembled quantum dots (QDs). Using a microstate master equation model we demonstrate that our single QDs are described by nonlinear exciton dynamics. The simultaneous detection of two-color, single photon emission from InAs QDs using these nonlinear dynamics was used to design a NOT AND logic transference function. This computational functionality combines the advantages of working with light/photons as input/output device parameters (all-optical system) and that of a nanodevice (QD size of ∼ 20 nm) while also providing high optical sensitivity (ultralow optical power operational requirements). These system features represent an important and interesting step toward the development of new prototypes for the incoming quantum information technologies.

Magnetically tunable singlet-triplet spin qubit in a four-electron InGaAs coupled quantum dot

A pair of self-assembled InGaAs quantum dots filled with two electrons can act as a singlet-triplet spin qubit that is robust against nuclear spin fluctuations as well as charge noise. This results in a T2* coherence time two orders of magnitude longer than that of a single electron, provided the qubit is operated at a particular "sweet spot" in gate voltage. However, at this fixed operating point the ground-state splitting can no longer be tuned into resonance with e.g. another qubit, limiting the options for coupling multiple qubits. Here, we propose using a four-electron coupled quantum dot to implement a singlet-triplet qubit that features a magnetically tunable level splitting. As a first step towards full experimental realization of this qubit design, we use optical spectroscopy to demonstrate the tunability of the four-electron singlet-triplet splitting in a moderate magnetic field.

Leveraging crystal anisotropy for deterministic growth of InAs quantum dots with narrow optical linewidths

Crystal growth anisotropy in molecular beam epitaxy usually prevents deterministic nucleation of individual quantum dots when a thick GaAs buffer is grown over a nanopatterned substrate. Here, we demonstrate how this anisotropy can actually be used to mold nucleation sites for single dots on a much thicker buffer than has been achieved by conventional techniques. This approach greatly suppresses the problem of defect-induced line broadening for single quantum dots in a charge-tunable device, giving state-of-the-art optical linewidths for a system widely studied as a spin qubit for quantum information.

A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode

Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10(7) and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920-980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.

Single spins in self-assembled quantum dots

Self-assembled quantum dots have excellent photonic properties. For instance, a single quantum dot is a high-brightness, narrow-linewidth source of single photons. Furthermore, the environment of a single quantum dot can be tailored relatively easily using semiconductor heterostructure and post-growth processing techniques, enabling electrical control of the quantum dot charge and control over the photonic modes with which the quantum dot interacts. A single electron or hole trapped inside a quantum dot has spintronics applications. Although the spin dephasing is rather rapid, a single spin can be manipulated using optical techniques on subnanosecond timescales. Optical experiments are also providing new insights into old issues, such as the central spin problem. This Review provides a snapshot of this active field, with some indications for the future. It covers the basic materials and optical properties of single quantum dots, techniques for initializing, manipulating and reading out single spin qubits, and the mechanisms that limit the electron-spin and hole-spin coherence.

On-demand semiconductor single-photon source with near-unity indistinguishability

Single-photon sources based on semiconductor quantum dots offer distinct advantages for quantum information, including a scalable solid-state platform, ultrabrightness and interconnectivity with matter qubits. A key prerequisite for their use in optical quantum computing and solid-state networks is a high level of efficiency and indistinguishability. Pulsed resonance fluorescence has been anticipated as the optimum condition for the deterministic generation of high-quality photons with vanishing effects of dephasing. Here, we generate pulsed single photons on demand from a single, microcavity-embedded quantum dot under s-shell excitation with 3 ps laser pulses. The π pulse-excited resonance-fluorescence photons have less than 0.3% background contribution and a vanishing two-photon emission probability. Non-postselective Hong-Ou-Mandel interference between two successively emitted photons is observed with a visibility of 0.97(2), comparable to trapped atoms and ions. Two single photons are further used to implement a high-fidelity quantum controlled-NOT gate.

Coherent two-electron spin qubits in an optically active pair of coupled InGaAs quantum dots

In semiconductors, the T2* coherence time of a single confined spin is limited either by the fluctuating magnetic environment (via the hyperfine interaction), or by charge fluctuations (via the spin-orbit interaction). We demonstrate that both limitations can be overcome simultaneously by using two exchange-coupled electron spins that realize a single decoherence-avoiding qubit. Using coherent population trapping, we generate a coherent superposition of the singlet and triplet states of an optically active quantum dot molecule, and show that the corresponding T2* may exceed 200 ns.