Łydżba P, Jacak L, Jacak J. Hierarchy of fillings for the FQHE in monolayer graphene.
Sci Rep 2015;
5:14287. [PMID:
26392385 PMCID:
PMC4585763 DOI:
10.1038/srep14287]
[Citation(s) in RCA: 14] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/02/2015] [Accepted: 08/21/2015] [Indexed: 12/03/2022] Open
Abstract
In this paper, the commensurability conditions, which originated from the unique topology of two-dimensional systems, are applied to determine the quantum Hall effect hierarchy in the case of a monolayer graphene. The fundamental difference in a definition of a typical semiconductor and a monolayer graphene filling factor is pointed out. The calculations are undertaken for all spin-valley branches of two lowest Landau levels, since only they are currently experimentally accessible. The obtained filling factors are compared with the experimental data and a very good agreement is achieved. The work also introduces a concept of the single-loop fractional quantum Hall effect.
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