Half-Heusler semiconductors as piezoelectrics

Hybrid-DFT study of halide perovskites, an energy-efficient material under compressive pressure for piezoelectric applications

Recent studies have reported that lead-halide perovskites are the most efficient energy-harvesting materials. Regardless of their high-output energy and structural stability, lead-based products have risk factors due to their toxicity. Therefore, lead-free perovskites that offer green energy are the expected alternatives. We have taken CsGeX3(X = Cl, Br, and I) as lead-free halide perovskites despite knowing the low power conversion rate. Herein, we have tried to study the mechanisms of enhancement of energy-harvesting capabilities involving an interplay between structure and electronic properties. A density functional theory simulation of these materials shows a decrease in the band gaps, lattice parameters, and volumes with increasing applied pressure. We report the high piezoelectric responses and high electro-mechanical conversion rates, which are intriguing for generating electricity through mechanical stress.

First principle study of scandium-based novel ternary half Heusler ScXGe (X = Mn and Fe) alloys: insight into the spin-polarized structural, electronic, and magnetic properties

The structural, electronic, and magnetic properties of novel half-Heusler alloys ScXGe (X = Mn, Fe) are investigated using the first principle full potential linearized augmented plane wave approach based on density functional theory (DFT). To attain the desired outcomes, we employed the exchange-correlation frameworks, specifically the local density approximation in combination with Perdew, Burke, and Ernzerhof's generalized gradient approximation plus the Hubbard U parameter method (GGA + U) to highlight the strong exchange-correlation interaction in these alloys. The structural parameter optimizations, whether ferromagnetic (FM) or nonmagnetic (NM), reveal that all ScXGe (where X = Mn, Fe) Heusler alloys attain their lowest ground state energy during FM optimization. The examination of the electronic properties of these alloys reveals their metallic character in both the spin-up and spin-down channels. The projected densities of states indicate that bonding is achieved through the hybridization of p-d and d-d states in all of the compounds. The investigation of the magnetic properties in ScXGe (where X = Mn, Fe) compounds indicates pronounced stability in their ferromagnetic state. Notably, the Curie temperatures for ScXGe (X = Mn, Fe) are determined to be 2177.02 K and 1656.09 K, respectively. The observation of metallic behavior and the strong ferromagnetic characteristics in ScXGe (X = Mn, Fe) half-Heusler alloys underscores their potential significance in the realm of spintronic devices. Consequently, our study serves as a robust foundation for subsequent experimental validation.

Rational Design of Tetrahedral Derivatives as Efficient Light-Emitting Materials Based on "Super Atom" Perspective

Traditional semiconductor quantum dots of groups II-VI are key ingredients of next-generation display technology. Yet, the majority of them contain toxic heavy-metal elements, thus calling for alternative light-emitting materials. Herein, we have explored three novel categories of multicomponent compounds, namely, tetragonal II-III2-VI4 porous ternary compounds, cubic I2-II3-VI4 ternary compounds, and cubic I-II-III3-V4 quaternary compounds. This is achieved by judicious introduction of a "super atom" perspective and concurrently varying the solid-state lattice packing of involved super atoms or the population of surrounding counter cations. Based on first-principles calculations of 392 candidate materials with designed crystal structures, 53 highly stable materials have been screened. Strikingly, 34 of them are direct-bandgap semiconductors with emitting wavelengths covering the near-infrared and visible-light regions. This work provides a comprehensive database of highly efficient light-emitting materials, which may be of interest for a broad field of optoelectronic applications.

Pressure-dependent physical properties of cesium-niobium oxide: a comprehensive study

Perovskites, an important class of materials, are mostly utilized in memory and spintronic devices. The thermoelectric response calculations for some perovskite oxides have been reported, but their attributes under pressure have rarely been explored. In this current study, the effects of high pressure on various properties of CsNbO3 perovskite oxides in the cubic phase were investigated using the pseudopotential approach and Boltzmann transport theory. Specifically, the structural electronic dispersion relations, density of states, phonon properties, elasto-mechanical properties, optical constants, and thermoelectric performance of the material were analyzed. CsNbO3 was reported to be dynamically stable through the optimization of energy against volume under ambient pressure conditions. The phonon dispersion curves of CsNbO3 were computed at pressures ranging from 60 to 100 GPa to demonstrate its stability under these pressures. At ambient pressure, CsNbO3 is a semiconductor with a wide direct band gap of 1.95 eV. With the increase in pressure, the band gap starts decreasing. An analysis of the imaginary part of the dielectric constant suggests that this material may be useful for sensors and optoelectronic devices. Various thermoelectric response parameters were tested for CsNbO3 at temperatures from 50 K to 800 K, with a step size of 50 K, and pressures of 60-100 GPa. Based on the calculated power factor values and optical parameters, CsNbO3 proved to be a potential candidate for energy harvesting applications.

Nanoscale LiZnN - Luminescent Half-Heusler Quantum Dots

Colloidal semiconductor quantum dots are a well-established technology, with numerous materials available either commercially or through the vast body of literature. The prevalent materials are cadmium-based and are unlikely to find general acceptance in most applications. While the III-V family of materials is a likely substitute, issues remain about its long-term suitability, and other earth-abundant materials are being explored. In this report, we highlight a nanoscale half-Heusler semiconductor, LiZnN, composed of readily available elements as a potential alternative system to luminescent II-VI and III-V nanoparticle quantum dots.

Design Principle for Tetrahedral Semiconductors and Their Functional Derivatives: Cation Stabilizing Charged Cluster Network

Colloidal quantum dots (QDs) of groups II-VI and III-V are key ingredients for next-generation light-emitting devices. Yet, many of them are heavy-element-containing or indirect bandgap, causing limited choice of environmental friendly efficient light-emitting materials. Herein, we resolve this issue by exploring potential derivatives of the parent semiconductors, thus expanding the material space. The key to success is the discovery of a principle for designing those materials, namely, cation stabilizing charged cluster network. Guided by this principle, three novel categories of cubic materials have been predicted, namely, porous binary compounds, I-II-VI ternary compounds, and I-II-III-V quaternary compounds. Using first-principles calculations, 65 realistic highly stable candidate materials have been theoretically screened. Their structural and compositional diversity enables a wide tunability of emitting wavelength from far-infrared to ultraviolet region. This work enriches the family of tetrahedral semiconductors and derivatives, which may be of interest for a broad field of optoelectronic applications.

First-Principles Investigations of Thermoelectric Behavior of RuCrX (X = Si, Ge, Sn)

The half-Heusler alloys have not only been recognized for spintronic and memory devices but also for thermoelectric applications. In this research work, the detailed study for thermoelectric parameters of RuCrX (X = Si, Ge, Sn) half-Heusler alloys has been carried out by using the pseudopotential approach alongside the Boltzmann transport theory. The RuCrX (X= Si, Ge, Sn) was reported stable in C1 _b -type structure by means of energy-volume optimization, elastic stability criteria, positive phonon frequencies in phonon dispersion curves, and formation energies. The all important thermoelectric properties of these alloys have not yet been explored. The thermoelectric properties such as Seebeck coefficient, electronic part of thermal conductivity, electrical conductivity, and power factor have been discussed within a specific temperature range (300-1200 K). The calculated value of the power factor was found to be 5.11 × 10¹¹ W/(m K² s) for RuCrSi, 3.42 × 10¹¹ W/(m K² s) for RuCrGe, and 1.85 × 10¹¹ W/(m K² s) for RuCrSn at 1200 K.

Electronic Structure-, Phonon Spectrum-, and Effective Mass- Related Thermoelectric Properties of PdXSn (X = Zr, Hf) Half Heuslers

We hereby discuss the thermoelectric properties of PdXSn(X = Zr, Hf) half Heuslers in relation to lattice thermal conductivity probed under effective mass (hole/electrons) calculations and deformation potential theory. In addition, we report the structural, electronic, mechanical, and lattice dynamics of these materials as well. Both alloys are indirect band gap semiconductors with a gap of 0.91 eV and 0.82 eV for PdZrSn and PdHfSn, respectively. Both half Heusler materials are mechanically and dynamically stable. The effective mass of electrons/holes is (0.13/1.23) for Zr-type and (0.12/1.12) for Hf-kind alloys, which is inversely proportional to the relaxation time and directly decides the electrical/thermal conductivity of these materials. At 300K, the magnitude of lattice thermal conductivity observed for PdZrSn is 15.16 W/mK and 9.53 W/mK for PdHfSn. The highest observed ZT value for PdZrSn and PdHfSn is 0.32 and 0.4, respectively.

High-Throughput Screening of Two-Dimensional Planar sp2 Carbon Space Associated with a Labeled Quotient Graph

The configurational space of two-dimensional planar sp² carbon has been systematically scanned by a random strategy combined with group and graph theory, and 1114 new carbon allotropes have been identified. These allotropes are energetically more favorable than most of the previously predicted 120 carbon allotropes. By fitting the HSE06 band structures of six old structures, we optimize the parameters for a general and transferable tight-binding model for high-throughput band structure calculations. We identified that there are 190 Dirac semimetals, 241 semiconductors, and 683 normal metals among the new allotropes. Interestingly, several stable low-energy carbon systems with exotic electronic properties are proposed, such as type III, type I/II mixed, and type I/III mixed semimetals, which are very rare in planar carbon systems. In particular, one nodal-line semimetal has been discovered among these thousands of allotropes, which is the first nodal-line semimetal in sp² carbon systems. Our discoveries greatly enrich our knowledge of the structures and electronic properties of the two-dimensional carbon family.

Computational Search for Better Thermoelectric Performance in Nickel-Based Half-Heusler Compounds

Half-Heusler alloys have recently received extensive attention because of their promising thermoelectric (TE) properties and great potential for applications requiring efficient thermoelectricity. Although the conversion efficiency of these materials can be greatly improved by doping, it is still far away from the real-life applications. Therefore, search for better parent TE compounds is deemed urgent. Using a high-throughput search method based on first-principles calculations in newly proposed 378 half-Heusler alloys, we identify nine nickel-based half-Heusler semiconductors as candidates and systematically study their mechanical, electronic, and transport properties. Their mechanical and dynamical stabilities are verified based on the calculated elastic constants and phonon spectra. The electronic structure calculations indicate the existence of direct energy gaps in the NiVZ (Z = Al, Ga, and In) and indirect energy gaps in the NiTiZ (Z = Si, Ge, and Sn) and NiScZ (Z = P, As, and Sb) compounds. Among them, NiVAl, NiVGa, and NiVIn exhibit a sharp slope of density of states near the Fermi level, which is predicted to be essential for a high TE performance. Further investigation on carrier concentration and temperature dependence of TE properties shows the high power factors of NiVAl, NiVGa, and NiVIn, which are responsible for their high figure of merit values. The highest maximum power factor of 5.152 mW m-1 K-2 and figure of merit of 0.309 are predicted for pristine half-Heusler NiVIn, which are larger than the values of some known pristine and doped half-Heusler TE materials. Our work opens up new avenues for rationally searching better TE materials among half-Heusler alloys for applications in fields requiring efficient thermoelectricity.

Dimensional engineering of a topological insulating phase in Half-Heusler LiMgAs

We propose a novel technique of dimensional engineering to realize low dimensional topological insulator from a trivial three dimensional parent. This is achieved by confining the bulk system to one dimension along a particular crystal direction, thus enhancing the quantum confinement effects in the system. We investigate this mechanism in the Half-Heusler compound LiMgAs with face-centered cubic (FCC) structure. At ambient conditions the bulk FCC structure exhibits a semi-conducting nature. But, under the influence of high volume expansive pressure (VEP) the system undergoes a topological phase transition (TPT) from semi-conducting to semi-metallic forming a Dirac cone. At a critical VEP we observe that, spin-orbit coupling (SOC) effects introduce a gap of [Formula: see text] 1.5 meV in the Dirac cone at high symmetry point [Formula: see text] in the Brillouin zone. This phase of bulk LiMgAs exhibits a trivial nature characterized by the [Formula: see text] invariants as (0,000). By further performing dimensional engineering, we cleave [111] plane from the bulk FCC structure and confine the system in one dimension. This low-dimensional phase of LiMgAs has structure similar to the two dimensional [Formula: see text] system. Under a relatively lower compressive strain, the low-dimensional system undergoes a TPT and exhibits a non-trivial topological nature characterized by the SOC gap of [Formula: see text] 55 meV and [Formula: see text] invariant [Formula: see text] = 1. Although both, the low-dimensional and bulk phase exhibit edge and surface states, the low-dimensional phase is far more superior and exceptional as compared to the bulk parent in terms of the velocity of Fermions ([Formula: see text]) across the surface states. Such a system has promising applications in nano-electronics.

Prediction of an Extended Ferroelectric Clathrate

Using first-principles calculations, we predict a lightweight room-temperature ferroelectric carbon-boron framework in a host-guest clathrate structure. This ferroelectric clathrate, with composition ScB_{3}C_{3}, exhibits high polarization density and low mass density compared with widely used commercial ferroelectrics. Molecular dynamics simulations show spontaneous polarization with a moderate above-room-temperature T_{c} of ∼370  K, which implies large susceptibility and possibly large electrocaloric and piezoelectric constants at room temperature. Our findings open the possibility for a new class of ferroelectric materials with potential across a broad range of applications.

Reliable Prediction of New Quantum Materials for Topological and Renewable-Energy Applications: A High-Throughput Screening

Half-Heusler (HH) alloys provide a general platform for searching candidate materials for various energy applications. Here, we present a high-throughput first-principles calculation of a set of 960 eight valence-electron HH alloys to search potential candidates for thermoelectric (TE), solar harvesting (SH), topological insulator (TI), and transparent conductor (TC) applications. The initial screening parameters (such as stability, bandgap (E_g), band-inversion strength) followed by application specific descriptors are used to predict promising compounds. 121 out of 960 compounds were found to be dynamically and chemically stable. Of them, 31 compounds (with E_g < 1.5 eV) were studied for TE application, 30 (with 1 < E_g < 1.8 eV) for SH application, 21 for TI application, and 29 (with E_g > 2 eV) for TC applications. Some of the compounds show reasonably high thermoelectric figure of merit (ZT ∼ 1.6) and solar efficiency (SLME) > 20%, comparable to existing state-of-the-art materials. Surface band structure and topological Z2 index reconfirms the robustness of topological behavior. We strongly believe that our calculations should leverage useful insights to experimentalists.

Pressure induced phase transition, electronic and optical properties of LiBeX (XAs, Sb and Bi)

In this contribution, we report the results of theoretical calculation on the pressure induced phase transitions, structural, electronic and optical properties of the lithium based ternary LiBeX (X = As, Sb, Bi) compounds. These calculations are carried out using the full potential linearized augmented plane wave method. Our results show that these compounds undergo first order phase transitions. LiBeAs transforms from the reported semiconducting tetragonal Cu2Sb-type structure (P4/nmm) to the semiconducting polar hexagonal LiGaGe-type structure (P63mc) at 3.95 GPa, then to the metallic Ni2In (P63/mmc) structure at 66.62 GPa. In LiBeSb, only one transition occurs at 63.95 GPa from the semiconducting LiGaGe type-structure to the metallic Ni2In one. LiBeBi exhibits two phase transitions, the first one from the semiconducting LiGaGe phase to the MgSrSi one at 50 GPa, then to the metallic Ni2In at 61 GPa. Our calculated structural parameters with the modified generalized gradient approximation (PBEsol) functional are in very good agreement with other experimental and theoretical values available in the literature. The band structure and density of states of the studied compounds in different phases are calculated using PBEsol functional and Tran-Blaha modified Becke-Johnson (mBJ) exchange potential. Studied materials in their different semiconducting phases have indirect band gaps, which are higher with the mBJ potential than those obtained with PBEsol functional. The structures and peaks in the optical spectra are related to the transitions in the band structure. The mean value ofɛ(0) increases in this sequence LiBeAs-LiBeSb-LiBeBi. The variation of the dielectric constants with pressure is consistent with the variation of the direct band gaps and shows a discontinuity at the transition. The absorption coefficients,αxxandαzz, are the highest for the LiBeBi in the LiGaGe structure in the visible regime. LiBeSb and LiBeBi are promising candidates for application in the visible regime.

Volume expansive pressure (VEP) driven non-trivial topological phase transition in LiMgBi

Topological Insulators (TI) exhibit robust spin-locked dissipationless Fermion transport along the surface states. In the current study, we use first-principles calculations to investigate a Topological Phase Transition (TPT) in a Half-Heusler (HH) compound LiMgBi driven by a Volume Expansive Pressure (VEP) which is attributed to the presence of, intrinsic voids, thermal perturbations and/or due to a phenomena known as cavity nuclei. We find that, the dynamically stable face-centred cubic (FCC) structure of LiMgBi (which belongs to the F4[combining macron]3m[216] space group), undergoes TPT beyond a critical VEP (at 4.0%). The continuous application of VEP from 0.0% to 8.0% results in a phase transition from a, band insulator to a Dirac semi-metal nature. Qualitatively, the Dirac cone formation and band inversion along the high symmetry point Γ in the Brillouin Zone (BZ) are analysed in terms of Electronic Band Structure (EBS) and Projected Local Density of States (LDOS). The TPT is further characterised by the [Doublestruck Z]₂ invariant, (ν₀, ν₁ν₂ν₃) ≡ (1, 0 0 0) along the (0001) surface which indicates quantitatively that, HH LiMgBi is a strong TI. We hence propose, HH LiMgBi (known for its piezoelectric, thermo-electric and semi-conducting applications) as a strong TI with potential multi-purpose application in the field of electronics, spintronics and quantum computation.

First-principles investigations of orthorhombic-cubic phase transition and its effect on thermoelectric properties in cobalt-based ternary alloys

We screened six cobalt-based 18-VEC systems CoVSi, CoNbSi, CoTaSi (Si-group) and CoVGe, CoNbGe, CoTaGe (Ge-group) by the first-principles approach, with the motivation of stabilizing these orthorhombic phases into the cubic symmetry-favorable for thermoelectrics. Remarkably, it was found that the Ge-group is energetically more favorable in the cubic symmetry than the hitherto orthorhombic phase. We account the cubic ground state of the Si-group to the interplay of internal pressure and covalent interactions. The principle of reducing covalent interactions will provide insight and could be vital in speeding the search of missing cubic half-Heusler alloys. Meanwhile, the calculated transport properties of all the systems on p -type doping, except CoVSi, are more promising than the well-known CoTiSb. We also provide conservative estimates of the figure of merit, exceeding the CoTiSb. Based on our findings, we suggest possible new phases of ternary compounds for thermoelectric applications.

First principles investigation on elastic, optoelectronic and thermoelectric properties of KYX (X = Ge, Sn and Pb) half-heusler compounds

Theoretical calculations based on the density functional theory and the Boltzmann semi-classical transport theory have been carried out to examine the structural, elastic, electronic, optical and thermoelectric properties of Potassium- and Yttrium-based half-Heusler (HH) compounds KYX (X = Ge, Sn and Pb). Based on our calculations, KYGe, KYSn, and KYPb HH compounds are mechanically stable, and show semiconductor nature with direct band gaps of 0.852, 0.921, and 0.927 eV, respectively, which are obtained from mBJ level of theory. Moreover, the KYSn is brittle, while the KYGe and KYPb are dutile. The optical results show that these HH compounds have wide absorption band from high energy region of infrarred to ultraviolet region. At high photon energies (beyond of 13 eV), they shows very small reflectivity. Because of their favorable electronic structure, these materials have very good thermoelectric performance with high thermopower and figure of merit. The effect of temperature on thermoelectric properties also is discussed in details.

DFT Computed Dielectric Response and THz Spectra of Organic Co-Crystals and Their Constituent Components

Terahertz (THz) spectroscopy has been put forth as a non-contact, analytical probe to characterize the intermolecular interactions of biologically active molecules, specifically as a way to understand, better develop, and use active pharmaceutical ingredients. An obstacle towards fully utilizing this technique as a probe is the need to couple features in the THz regions to specific vibrational modes and interactions. One solution is to use density functional theory (DFT) methods to assign specific vibrational modes to signals in the THz region, coupling atomistic insights to spectral features. Here, we use open source planewave DFT packages that employ ultrasoft pseudopotentials to assess the infrared (IR) response of organic compounds and complex co-crystal formulations in the solid state, with and without dispersion corrections. We compare our DFT computed lattice parameters and vibrational modes to experiment and comment on how to improve the agreement between theory and modeling to allow for THz spectroscopy to be used as an analytical probe in complex biologically relevant systems.

Native defects and impurity band behavior in half-Heusler thermoelectric NbFeSb

Native defects are identified that dominate the electronic behavior and generate impurity-band states in the promising thermoelectric NbFeSb.

High-throughput first principles search for new ferroelectrics

We use a combination of symmetry analysis and high-throughput density functional theory calculations to search for new ferroelectric materials. We use two search strategies to identify candidate materials. In the first strategy, we start with non-polar materials and look for unrecognized energy-lowering polar distortions. In the second strategy, we consider polar materials and look for related higher symmetry structures. In both cases, if we find new structures with the correct symmetries that are also close in energy to experimentally known structures, then the material is likely to be switchable in an external electric field, making it a candidate ferroelectric. We find sixteen candidate materials, with variety of properties that are rare in typical ferroelectrics, including large polarization, hyperferroelectricity, antiferroelectricity, and multiferroism.

Learning from data to design functional materials without inversion symmetry

Accelerating the search for functional materials is a challenging problem. Here we develop an informatics-guided ab initio approach to accelerate the design and discovery of noncentrosymmetric materials. The workflow integrates group theory, informatics and density-functional theory to uncover design guidelines for predicting noncentrosymmetric compounds, which we apply to layered Ruddlesden-Popper oxides. Group theory identifies how configurations of oxygen octahedral rotation patterns, ordered cation arrangements and their interplay break inversion symmetry, while informatics tools learn from available data to select candidate compositions that fulfil the group-theoretical postulates. Our key outcome is the identification of 242 compositions after screening ∼3,200 that show potential for noncentrosymmetric structures, a 25-fold increase in the projected number of known noncentrosymmetric Ruddlesden-Popper oxides. We validate our predictions for 19 compounds using phonon calculations, among which 17 have noncentrosymmetric ground states including two potential multiferroics. Our approach enables rational design of materials with targeted crystal symmetries and functionalities.

Structural variety beyond appearance: high-pressure phases of CrB4 in comparison with FeB4

Employing particle swarm optimization (PSO) combined with first-principles calculations, we systemically studied high-pressure behaviors of hard CrB4. Our predictions reveal a distinct structural evolution under pressure for CrB4 despite having the same initial structure as FeB4. CrB4 is found to adopt a new P2/m structure above 196 GPa, another Pm structure at a pressure range of 261-294 GPa and then a Pmma structure beyond 294 GPa. Instead of puckering boron sheets in the initial structure, the high-pressure phases have planar boron sheets with different motifs upon compression. Comparatively, FeB4 prefers an I41/acd structure over 48 GPa with tetrahedron B4 units and a P213 structure above 231 GPa having equilateral triangle B3 units. Significantly, CrB4 exhibits persistent metallic behavior in contrast with the semiconducting features of FeB4 upon compression. The varied pressure response of hard tetraborides studied here is of importance for understanding boron-rich compounds and designing new materials with superlative properties.

Experimental demonstration of hybrid improper ferroelectricity and the presence of abundant charged walls in (Ca,Sr)3Ti2O7 crystals

On the basis of successful first-principles predictions of new functional ferroelectric materials, a number of new ferroelectrics have been experimentally discovered. Using trilinear coupling of two types of octahedron rotation, hybrid improper ferroelectricity has been theoretically predicted in ordered perovskites and the Ruddlesden-Popper compounds (Ca3Ti2O7, Ca3Mn2O7 and (Ca/Sr/Ba)3(Sn/Zr/Ge)2O7). However, the ferroelectricity of these compounds has never been experimentally confirmed and even their polar nature has been under debate. Here we provide the first experimental demonstration of room-temperature switchable polarization in bulk crystals of Ca3Ti2O7, as well as Sr-doped Ca3Ti2O7. Furthermore, (Ca, Sr)3Ti2O7 is found to exhibit an intriguing ferroelectric domain structure resulting from orthorhombic twins and (switchable) planar polarization. The planar domain structure accompanies abundant charged domain walls with conducting head-to-head and insulating tail-to-tail configurations, which exhibit a conduction difference of two orders of magnitude. These discoveries provide new research opportunities, not only for new stable ferroelectrics of Ruddlesden-Popper compounds, but also for meandering conducting domain walls formed by planar polarization.

The high-throughput highway to computational materials design

High-throughput computational materials design is an emerging area of materials science. By combining advanced thermodynamic and electronic-structure methods with intelligent data mining and database construction, and exploiting the power of current supercomputer architectures, scientists generate, manage and analyse enormous data repositories for the discovery of novel materials. In this Review we provide a current snapshot of this rapidly evolving field, and highlight the challenges and opportunities that lie ahead.

Orthorhombic ABC semiconductors as antiferroelectrics

We use a first-principles rational-design approach to identify a previously unrecognized class of antiferroelectric materials in the Pnma MgSrSi structure type. The MgSrSi structure type can be described in terms of antipolar distortions of the nonpolar P6(3)/mmc ZrBeSi structure type, and we find many members of this structure type are close in energy to the related polar P6(3)mc LiGaGe structure type, which includes many members we predict to be ferroelectric. We highlight known ABC combinations in which this energy difference is comparable to the antiferroelectric-ferroelectric switching barrier of PbZrO(3). We calculate structural parameters and relative energies for all three structure types, both for reported and as-yet hypothetical representatives of this class. Our results provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.

Hexagonal ABC semiconductors as ferroelectrics

We use a first-principles rational-design approach to identify a previously unrecognized class of ferroelectric materials in the P6(3)mc LiGaGe structure type. We calculate structural parameters, polarization, and ferroelectric well depths both for reported and as-yet hypothetical representatives of this class. Our results provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.