Electronic Griffiths phase in the Te-doped semiconductor FeSb2

Electronic Griffiths Phase in Disordered Mott-Transition Systems

Solid-state physics and soft-matter physics have been developed independently, with little mutual exchange of the underlying physical concepts. However, after many studies of correlated electron systems, it has been recognized that correlated electrons (especially in Mott-transition systems) in solid matter sometimes show behavior similar to "structured fluids" in soft matter; that is, the electrons exhibit long-length self-organization (but without long-range order) and slow dynamics, which is inevitable for the long-length structures. The essential question is this: what condition causes such behavior in solid matter? We focused on an organic Mott-transition system and demonstrated that the electrons of this system fluctuate very slowly only when the following two factors are met simultaneously: (i) the electronic system is on the metal and Mott-insulator boundary and (ii) the system is subject to quenched disorder. This electronic state with slow dynamics under this condition can be explained by the concept of the "(electronic) Griffiths phase." This concept will potentially be a key in connecting solid-state physics with soft-matter physics.

Emerging tellurium nanostructures: controllable synthesis and their applications

Tellurium (Te) is a rare element in trace amounts of about one part per billion, comparable to that of platinum and ranked 75th in the abundance of the elements in the earth crust. Te nanostructures, as narrow bandgap semiconductors, have numerous potential applications in the fabrication of many modern devices. The past decades have witnessed an explosion in new strategies for synthesizing diverse emerging Te nanostructures with controlled compositions, sizes, shapes, and structures. Their structure-determined nature makes functional Te nanomaterials an attractive candidate for modern applications. This review focuses on the synthesis and morphology control of emerging Te nanostructures and summarizes the latest developments in the applications of Te nanostructures, such as their use as chemical transformation templates to access a huge family of nanowires/nanotubes, batteries, photodetectors, ion detection and removal, element doping, piezoelectric energy harvesting, gas sensing, thermoelectric devices and many other device applications. Various Te nanostructures with different shapes and structures will exploit the beneficial properties associated with their assembly process and nanofabrication. Finally, the prospects for future applications of Te nanomaterials are summarized and highlighted.

Large-area ordered Ge-Si compound quantum dot molecules on dot-patterned Si (001) substrates

We report on the formation of large-area ordered Ge-Si compound quantum dot molecules (CQDMs) in a combination of nanosphere lithography and self-assembly. Truncated-pyramid-like Si dots with {11n} facets are readily formed, which are spatially ordered in a large area with controlled period and size. Each Si dot induces four self-assembled Ge-rich dots at its base edges that can be fourfold symmetric along <110> directions. A model based on surface chemical potential accounts well for these phenomena. Our results disclose the critical effect of surface curvature on the diffusion and the aggregation of Ge adatoms and shed new light on the unique features and the inherent mechanism of self-assembled QDs on patterned substrates. Such a configuration of one Si QD surrounded by fourfold symmetric Ge-rich QDs can be seen as a CQDM with unique features, which will have potential applications in novel devices.