Splitting of the zero-energy Landau level and universal dissipative conductivity at critical points in disordered graphene

Efficient Time-Domain Approach for Linear Response Functions

We derive the general Kubo formula in a form that solely utilizes the time evolution of displacement operators. The derivation is based on the decomposition of the linear response function into its time-symmetric and time-antisymmetric parts. We relate this form to the well-known fluctuation-dissipation formula and discuss theoretical and numerical aspects of it. The approach is illustrated with an analytical example for magnetic resonance as well as a numerical example where we analyze the electrical conductivity tensor and the Chern insulating state of the disordered Haldane model. We introduce a highly efficient time-domain approach that describes the quantum dynamics of the resistivity of this model with an at least 1000-fold better performance in comparison to existing time-evolution schemes.

Spin Hall Effect and Origins of Nonlocal Resistance in Adatom-Decorated Graphene

Recent experiments reporting an unexpectedly large spin Hall effect (SHE) in graphene decorated with adatoms have raised a fierce controversy. We apply numerically exact Kubo and Landauer-Büttiker formulas to realistic models of gold-decorated disordered graphene (including adatom clustering) to obtain the spin Hall conductivity and spin Hall angle, as well as the nonlocal resistance as a quantity accessible to experiments. Large spin Hall angles of ∼0.1 are obtained at zero temperature, but their dependence on adatom clustering differs from the predictions of semiclassical transport theories. Furthermore, we find multiple background contributions to the nonlocal resistance, some of which are unrelated to the SHE or any other spin-dependent origin, as well as a strong suppression of the SHE at room temperature. This motivates us to design a multiterminal graphene geometry which suppresses these background contributions and could, therefore, quantify the upper limit for spin-current generation in two-dimensional materials.

Lévy Flights due to Anisotropic Disorder in Graphene

We study transport properties of graphene with anisotropically distributed on-site impurities (adatoms) that are randomly placed on every third line drawn along carbon bonds. We show that stripe states characterized by strongly suppressed backscattering are formed in this model in the direction of the lines. The system reveals Lévy-flight transport in the stripe direction such that the corresponding conductivity increases as the square root of the system length. Thus, adding this type of disorder to clean graphene near the Dirac point strongly enhances the conductivity, which is in stark contrast with a fully random distribution of on-site impurities, which leads to Anderson localization. The effect is demonstrated both by numerical simulations using the Kwant code and by an analytical theory based on the self-consistent T-matrix approximation.

Insulator-quantum Hall transitionin monolayer epitaxial graphene

We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We observe temperature (T)-independent crossing points in the longitudinal resistivity ρxx, which are signatures of the insulator-quantum Hall (I-QH) transition, in all three devices. Upon converting the raw data into longitudinal and Hall conductivities σxx and σxy, in the most disordered device, we observed T-driven flow diagram approximated by the semi-circle law as well as the T-independent point in σxy near e2/h. We discuss our experimental results in the context of the evolution of the zero-energy Landau level at low magnetic fields B. We also compare the observed strongly insulating behaviour with metallic behaviour and the absence of the I-QH transition in graphene on SiO2 prepared by mechanical exfoliation.

Line defects and quantum Hall plateaus in graphene

Line defects in graphene can be either tailored-growth or arise naturally and are at the center of many discussions. Here we study the multiterminal conductance of graphene with an extended line defect in the quantum Hall regime analyzing the effects of the geometry of the setup, disorder and strain on the quantum Hall plateaus. We show that the defect turns out to affect the local and non-local conductance in very different ways depending on the geometrical configuration. When the defect is parallel to the sample edges one gets an equivalent circuit formed by parallel resistors. In contrast, when the defect bridges opposite edges, the Hall conductance may remain unaltered depending on the geometry of the voltage/current probes. The role of disorder, strain and the microscopic details of the defect in our results is also discussed. We show that the defect provides a realization of the electrical analog of an optical beam splitter. Its peculiar energy dependent inter-edge transmission allows it to be turned on or off at will and it may be used for routing the chiral edge states.

Real-space calculation of the conductivity tensor for disordered topological matter

We describe an efficient numerical approach to calculate the longitudinal and transverse Kubo conductivities of large systems using Bastin's formulation. We expand the Green's functions in terms of Chebyshev polynomials and compute the conductivity tensor for any temperature and chemical potential in a single step. To illustrate the power and generality of the approach, we calculate the conductivity tensor for the quantum Hall effect in disordered graphene and analyze the effect of the disorder in a Chern insulator in Haldane's model on a honeycomb lattice.

Quantum Hall criticality and localization in graphene with short-range impurities at the Dirac point

We explore the longitudinal conductivity of graphene at the Dirac point in a strong magnetic field with two types of short-range scatterers: adatoms that mix the valleys and "scalar" impurities that do not mix them. A scattering theory for the Dirac equation is employed to express the conductance of a graphene sample as a function of impurity coordinates; an averaging over impurity positions is then performed numerically. The conductivity σ is equal to the ballistic value 4e2/πh for each disorder realization, provided the number of flux quanta considerably exceeds the number of impurities. For weaker fields, the conductivity in the presence of scalar impurities scales to the quantum-Hall critical point with σ≃4×0.4e2/h at half filling or to zero away from half filling due to the onset of Anderson localization. For adatoms, the localization behavior is also obtained at half filling due to splitting of the critical energy by intervalley scattering. Our results reveal a complex scaling flow governed by fixed points of different symmetry classes: remarkably, all key manifestations of Anderson localization and criticality in two dimensions are observed numerically in a single setup.