Atomic structure of interface states in silicon heterojunction solar cells

Self-assembly of isolated plasmonic dimers with sub-5 nm gaps on a metallic mirror

Realizing plasmonic nanogaps with a refractive index (n = 1) environment in metallic nanoparticle (NP) structures is highly attractive for a wide range of applications. So far in self-assembly-based approaches, without surface functionalization of metallic NPs, achieving such extremely small nanogaps is challenging. Surface functionalization introduces changes in the refractive index at nanogaps, which in turn deteriorates the desired plasmonic properties. In addition, fabrication of low-density dimer NP designs with smaller nanogaps poses a big challenge. Here, we introduce a simple and straightforward self-assembly-based strategy for the fabrication of low-density, isolated dimer gold nanoparticles in a nano-particle-on-metallic-mirror (NPoM) platform. A minimum interparticle gap distance between NPs of ∼3 nm is achieved without surface functionalization. This is possible by utilizing the M13 bacteriophage as the spacer layer instead of SiO2 in NPoM. Density functional theory calculations on Au atom adsorption on SiO2 and M13 bacteriophage surface constituents trace the NP assembly on the latter to a comparatively weak interaction with the substrate. Our study offers an attractive route for fabricating low density plasmonic dimer structures featuring small nanogaps and will enrich structure specific/isolated studies benefitting a variety of optical, actuator, and sensing applications.

Microwave field mapping for EPR-on-a-chip experiments

Electron paramagnetic resonance-on-a-chip (EPRoC) devices use small voltage-controlled oscillators (VCOs) for both the excitation and detection of the EPR signal, allowing access to unique sample environments by lifting the restrictions imposed by resonator-based EPR techniques. EPRoC devices have been successfully used at multiple frequencies (7 to 360 gigahertz) and have demonstrated their utility in producing high-resolution spectra in a variety of spin centers. To enable quantitative measurements using EPRoC devices, the spatial distribution of the B1 field produced by the VCOs must be known. As an example, the field distribution of a 12-coil VCO array EPRoC operating at 14 gigahertz is described in this study. The frequency modulation-recorded EPR spectra of a "point"-like and a thin-film sample were investigated while varying the position of both samples in three directions. The results were compared to COMSOL simulations of the B1-field intensity. The EPRoC array sensitive volume was determined to be ~19 nanoliters. Implications for possible EPR applications are discussed.

Defect-Assisted Exciton Transfer across the Tetracene-Si(111):H Interface

Exciton transfers are ubiquitous and extremely important processes, but often poorly understood. A recent example is the triplet exciton transfer in tetracene sensitized silicon solar cells exploited for harvesting high-energy photons. The present ab initio molecular dynamics calculations for tetracene-Si(111):H interfaces show that Si dangling bonds, intuitively expected to hinder the exciton transfer, actually foster it. This suggests that defects and structural imperfections at interfaces may be exploited for excitation transfer.

Chemical approaches for electronic doping in photovoltaic materials beyond crystalline silicon

Electronic doping is applied to tailor the electrical and optoelectronic properties of semiconductors, which have been widely adopted in information and clean energy technologies, like integrated circuit fabrication and PVs. Though this concept has prevailed in conventional PVs, it has achieved limited success in the new-generation PV materials, particularly in halide perovskites, owing to their soft lattice nature and self-compensation by intrinsic defects. In this review, we summarize the evolution of the theoretical understanding and strategies of electronic doping from Si-based photovoltaics to thin-film technologies, e.g., GaAs, CdTe and Cu(In,Ga)Se₂, and also cover the emerging PVs including halide perovskites and organic solar cells. We focus on the chemical approaches to electronic doping, emphasizing various chemical interactions/bonding throughout materials synthesis/modification to device fabrication/operation. Furthermore, we propose new classifications and models of electronic doping based on the physical and chemical properties of dopants, in the context of solid-state chemistry, which inspires further development of optoelectronics based on perovskites and other hybrid materials. Finally, we outline the effects of electronic doping in semiconducting materials and highlight the challenges that need to be overcome for reliable and controllable doping.

Relaxation processes in silicon heterojunction solar cells probed via noise spectroscopy

We have employed state-of-the-art cross-correlation noise spectroscopy (CCNS) to study carrier dynamics in silicon heterojunction solar cells (SHJ SCs). These cells were composed of a light absorbing n-doped monocrystalline silicon wafer contacted by passivating layers of i-a-Si:H and doped a-Si:H selective contact layers. Using CCNS, we are able to resolve and characterize four separate noise contributions: (1) shot noise with Fano factor close to unity due to holes tunneling through the np-junction, (2) a 1/f term connected to local potential fluctuations of charges trapped in a-Si:H defects, (3) generation-recombination noise with a time constant between 30 and 50 μs and attributed to recombination of holes at the interface between the ITO and n-a-Si:H window layer, and (4) a low-frequency generation-recombination term observed below 100 K which we assign to thermal emission over the ITO/ni-a-Si:H interface barrier. These results not only indicate that CCNS is capable of reveling otherwise undetectable relaxation process in SHJ SCs and other multi-layer devices, but also that the technique has a spatial selectivity allowing for the identification of the layer or interface where these processes are taking place.

Advanced capabilities for materials modelling with Quantum ESPRESSO

Quantum EXPRESSO is an integrated suite of open-source computer codes for quantum simulations of materials using state-of-the-art electronic-structure techniques, based on density-functional theory, density-functional perturbation theory, and many-body perturbation theory, within the plane-wave pseudopotential and projector-augmented-wave approaches. Quantum EXPRESSO owes its popularity to the wide variety of properties and processes it allows to simulate, to its performance on an increasingly broad array of hardware architectures, and to a community of researchers that rely on its capabilities as a core open-source development platform to implement their ideas. In this paper we describe recent extensions and improvements, covering new methodologies and property calculators, improved parallelization, code modularization, and extended interoperability both within the distribution and with external software.

Enhancing Solar Cell Efficiency Using Photon Upconversion Materials

Photovoltaic cells are able to convert sunlight into electricity, providing enough of the most abundant and cleanest energy to cover our energy needs. However, the efficiency of current photovoltaics is significantly impeded by the transmission loss of sub-band-gap photons. Photon upconversion is a promising route to circumvent this problem by converting these transmitted sub-band-gap photons into above-band-gap light, where solar cells typically have high quantum efficiency. Here, we summarize recent progress on varying types of efficient upconversion materials as well as their outstanding uses in a series of solar cells, including silicon solar cells (crystalline and amorphous), gallium arsenide (GaAs) solar cells, dye-sensitized solar cells, and other types of solar cells. The challenge and prospect of upconversion materials for photovoltaic applications are also discussed.

CW and pulsed electrically detected magnetic resonance spectroscopy at 263GHz/12T on operating amorphous silicon solar cells

Here we describe a new high frequency/high field continuous wave and pulsed electrically detected magnetic resonance (CW EDMR and pEDMR) setup, operating at 263GHz and resonance fields between 0 and 12T. Spin dependent transport in illuminated hydrogenated amorphous silicon p-i-n solar cells at 5K and 90K was studied by in operando 263GHz CW and pEDMR alongside complementary X-band CW EDMR. Benefiting from the superior resolution at 263GHz, we were able to better resolve EDMR signals originating from spin dependent hopping and recombination processes. 5K EDMR spectra were found to be dominated by conduction and valence band tail states involved in spin dependent hopping, with additional contributions from triplet exciton states. 90K EDMR spectra could be assigned to spin pair recombination involving conduction band tail states and dangling bonds as the dominating spin dependent transport process, with additional contributions from valence band tail and triplet exciton states.

High resolution in-operando microimaging of solar cells with pulsed electrically-detected magnetic resonance

The in-operando detection and high resolution spatial imaging of paramagnetic defects, impurities, and states becomes increasingly important for understanding loss mechanisms in solid-state electronic devices. Electron spin resonance (ESR), commonly employed for observing these species, cannot meet this challenge since it suffers from limited sensitivity and spatial resolution. An alternative and much more sensitive method, called electrically-detected magnetic resonance (EDMR), detects the species through their magnetic fingerprint, which can be traced in the device's electrical current. However, until now it could not obtain high resolution images in operating electronic devices. In this work, the first spatially-resolved electrically-detected magnetic resonance images (EDMRI) of paramagnetic states in an operating real-world electronic device are provided. The presented method is based on a novel microwave pulse sequence allowing for the coherent electrical detection of spin echoes in combination with powerful pulsed magnetic-field gradients. The applicability of the method is demonstrated on a device-grade 1-μm-thick amorphous silicon (a-Si:H) solar cell and an identical device that was degraded locally by an electron beam. The degraded areas with increased concentrations of paramagnetic defects lead to a local increase in recombination that is mapped by EDMRI with ∼20-μm-scale pixel resolution. The novel approach presented here can be widely used in the nondestructive in-operando three-dimensional characterization of solid-state electronic devices with a resolution potential of less than 100 nm.

General magnetic transition dipole moments for electron paramagnetic resonance

We present general expressions for the magnetic transition rates in electron paramagnetic resonance (EPR) experiments of anisotropic spin systems in the solid state. The expressions apply to general spin centers and arbitrary excitation geometry (Voigt, Faraday, and intermediate). They work for linear and circular polarized as well as unpolarized excitation, and for crystals and powders. The expressions are based on the concept of the (complex) magnetic transition dipole moment vector. Using the new theory, we determine the parities of ground and excited spin states of high-spin (S=5/2) Fe(III) in hemin from the polarization dependence of experimental EPR line intensities.

Atomistic study of the structural and electronic properties of a-Si:H/c-Si interfaces

We investigate the structural and electronic properties of the interface between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) by combining tight-binding molecular dynamics and DFT ab initio electronic structure calculations. We focus on the c-Si(100)(1×1)/a-Si:H, c-Si(100)(2×1)/a-Si:H and c-Si(111)/a-Si:H interfaces, due to their technological relevance. The analysis of atomic rearrangements induced at the interface by the interaction between H and Si allowed us to identify the relevant steps that lead to the transformation from c-Si(100)(1×1)/a-Si:H to c-Si(100)(2×1)/a-Si:H. The interface electronic structure is found to be characterized by spatially localized mid-gap states. Through them we have identified the relevant atomic structures responsible for the interface defect states, namely: dangling-bonds, H bridges, and strained bonds. Our analysis contributes to a better understanding of the role of such defects in c-Si/a-Si:H interfaces.

Multi-frequency EDMR applied to microcrystalline thin-film silicon solar cells

Pulsed multi-frequency electrically detected magnetic resonance (EDMR) at X-, Q- and W-Band (9.7, 34, and 94GHz) was applied to investigate paramagnetic centers in microcrystalline silicon thin-film solar cells under illumination. The EDMR spectra are decomposed into resonances of conduction band tail states (e states) and phosphorus donor states (P states) from the amorphous layer and localized states near the conduction band (CE states) in the microcrystalline layer. The e resonance has a symmetric profile at all three frequencies, whereas the CE resonance reveals an asymmetry especially at W-band. This is suggested to be due to a size distribution of Si crystallites in the microcrystalline material. A gain in spectral resolution for the e and CE resonances at high fields and frequencies demonstrates the advantages of high-field EDMR for investigating devices of disordered Si. The microwave frequency independence of the EDMR spectra indicates that a spin-dependent process independent of thermal spin-polarization is responsible for the EDMR signals observed at X-, Q- and W-band.