Shallow impurity level calculations in semiconductors using ab initio methods

Doping Limits of Phosphorus, Arsenic, and Antimony in CdTe

Low p-type doping is a limiting factor to increase CdTe thin-film solar-cell efficiency toward the theoretical Shockley-Queisser limit of 33%. Previous calculations predict relatively high ionization energies for group-V acceptors (P, As, and Sb), and they are plagued by self-compensation, forming AX centers, severely limiting hole concentration. However, recent experiments on CdTe single crystals indicate a much more favorable scenario, where P, As, and Sb behave as shallow acceptors. Using hybrid functional calculations, we solve this puzzle by showing that the ionization energies significantly decrease with the supercell size. When including the effects of spin-orbit coupling and extrapolating the results to the dilute limit, we find these impurities behave as hydrogenic-like shallow acceptors, and AX centers are unstable and do not limit p-type doping. We address the differences between our results and previous theoretical predictions and show that our ionization energies predict hole concentrations that agree with recent temperature-dependent Hall measurements.

Divide-and-conquer quantum mechanical material simulations with exascale supercomputers

Recent developments in large-scale materials science simulations, especially under the divide-and-conquer method, are reviewed. The pros and cons of the divide-and-conquer method are discussed. It is argued that the divide-and-conquer method, such as the linear-scaling 3D fragment method, is an ideal approach to take advantage of the heterogeneous architectures of modern-day supercomputers despite their relatively large prefactors among linear-scaling methods. Some developments in graphics processing unit (GPU) electronic structure calculations are also reviewed. The accelerators like GPU could be an essential part for the future exascale supercomputing.

An exchange-coupled donor molecule in silicon

We present a combined experimental-theoretical demonstration of the energy spectrum and exchange coupling of an isolated donor pair in a silicon nanotransistor. The molecular hybridization of the atomic orbitals leads to an enhancement of the one- and two-electron binding energies and charging energy with respect to the single donor case, a desirable feature for quantum electronic devices. Our hydrogen molecule-like model based on a multivalley central-cell corrected effective mass theory incorporating a full configuration interaction treatment of the 2-electron spectrum matches the measured data for an arsenic diatomic molecule with interatomic distance R = 2.3 ± 0.5 nm.