Fermiology of the strongly spin-orbit coupled superconductor Sn(1-x)In(x)Te: implications for topological superconductivity

Detailed magneto heat capacity analysis of SnAs topological superconductor

In this article, we report magneto heat capacity analysis of superconducting SnAs. Magneto heat capacity analysis of superconductors is an important tool to determine bulk superconductivity as well as the pairing mechanism of Cooper pairs. SnAs crystal is characterized through x-ray diffraction and x-ray photoelectron spectroscopy. Magneto transport measurements of studied SnAs superconductor evidenced presence of superconductivity at around 4 K, which persists up to an applied field of 250 Oe. The bulk nature of superconductivity is determined through AC susceptibility (χ) along with the heat capacity measurements. Magneto heat capacity measurements show SnAs to be a fully gapped s wave superconductor. This finding is well supported by calculated physical parameters likeα(3.36),λ_e-ph(0.70) and ΔC_el/γT_c(1.41). Calculation of residual Sommerfeld coefficient (γ_res) at different fields, confirms node-less superconductivity in SnAs.

Tip-induced superconductivity

It is widely believed that topological superconductivity, a hitherto elusive phase of quantum matter, can be achieved by inducing superconductivity in topological materials. In search of such topological superconductors, certain topological insulators (like, Bi₂Se₃) were successfully turned into superconductors by metal-ion (Cu, Pd, Sr, Nb etc) intercalation. Superconductivity could be induced in topological materials through applying pressure as well. For example, a pressure-induced superconducting phase was found in the topological insulator Bi₂Se₃. However, in all such cases, no conclusive signature of topological superconductivity was found. In this review, we will discuss about another novel way of inducing superconductivity in a non-superconducting topological material-by creating a mesoscopic interface on the material with a non-superconducting, normal metallic tip where the mesoscopic interface becomes superconducting. Such a phase is now known as a tip-induced superconducting (TISC) phase. This was first realized on Cd₃As₂in India. Following that, a large number of other topological materials were shown to display TISC. Since the TISC phase emerges only at a confined region under a mesoscopic point contact, traditional bulk tools for characterizing superconductivity cannot be employed to detect/confirm such a phase. On the other hand, such a point contact geometry is ideal for probing the possible existence of a temperature and magnetic field dependent superconducting energy gap and a temperature and magnetic field dependent critical current. We will review the details of the experimental signatures that can be used to prove the existence of superconductivity even when the 'text-book' tests for detecting superconductivity cannot be performed. Then, we will review various systems where a TISC phase could be realized.

CsV_{3}Sb_{5}: A Z_{2} Topological Kagome Metal with a Superconducting Ground State

Recently discovered alongside its sister compounds KV_{3}Sb_{5} and RbV_{3}Sb_{5}, CsV_{3}Sb_{5} crystallizes with an ideal kagome network of vanadium and antimonene layers separated by alkali metal ions. This work presents the electronic properties of CsV_{3}Sb_{5}, demonstrating bulk superconductivity in single crystals with a T_{c}=2.5  K. The normal state electronic structure is studied via angle-resolved photoemission spectroscopy and density-functional theory, which categorize CsV_{3}Sb_{5} as a Z_{2} topological metal. Multiple protected Dirac crossings are predicted in close proximity to the Fermi level (E_{F}), and signatures of normal state correlation effects are also suggested by a high-temperature charge density wavelike instability. The implications for the formation of unconventional superconductivity in this material are discussed.

Topological Semimetal Nanostructures: From Properties to Topotronics

Characterized by bulk Dirac or Weyl cones and surface Fermi-arc states, topological semimetals have sparked enormous research interest in recent years. The nanostructures, with large surface-to-volume ratio and easy field-effect gating, provide ideal platforms to detect and manipulate the topological quantum states. Exotic physical properties originating from these topological states endow topological semimetals attractive for future topological electronics (topotronics). For example, the linear energy dispersion relation is promising for broadband infrared photodetectors, the spin-momentum locking nature of topological surface states is valuable for spintronics, and the topological superconductivity is highly desirable for fault-tolerant qubits. For real-life applications, topological semimetals in the form of nanostructures are necessary in terms of convenient fabrication and integration. Here, we review the recent progresses in topological semimetal nanostructures and start with the quantum transport properties. Then topological semimetal-based electronic devices are introduced. Finally, we discuss several important aspects that should receive great effort in the future, including controllable synthesis, manipulation of quantum states, topological field effect transistors, spintronic applications, and topological quantum computation.

High-Pressure Synthesis and Superconducting Properties of NaCl-Type In1−xPbxTe (x = 0–0.8)

We have investigated the Pb-substitution effect upon the superconductivity of NaCl-type In1−xPbxTe. Polycrystalline samples with x = 0–0.8 were synthesized using high-pressure synthesis. The lattice parameter was systematically increased by Pb substitution. For x ≤ 0.6, bulk superconductivity was observed, and the superconducting transition temperature increased from 3 K (for InTe) to 5 K by Pb substitutions. From analyses of specific heat jumps at the superconducting transition, conventional (phonon-mediated) weak-coupling pairing mechanisms were suggested for In1−xPbxTe.

Evolution of Electronic States and Emergence of Superconductivity in the Polar Semiconductor GeTe by Doping Valence-Skipping Indium

GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. Here, we report a superconductor-semiconductor-superconductor transition controlled by finely-tuned In doping. Our results reveal the existence of a critical doping concentration x_{c}=0.12 in Ge_{1-x}In_{x}Te, where various properties, including structure, resistivity, charge carrier type, and the density of states, take either an extremum or change their character. At the same time, we find indications of a change in the In-valence state from In^{3+} to In^{1+} with increasing x by core-level photoemission spectroscopy, suggesting that this system is a new promising playground to probe valence fluctuations and their possible impact on structural, electronic, and thermodynamic properties of their host.

Proximity-Induced Superconductivity and Quantum Interference in Topological Crystalline Insulator SnTe Thin-Film Devices

Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and, thus, to host Majorana physics. We report on the preparation and characterization of Nb-based superconducting quantum interference devices patterned on top of topological crystalline insulator SnTe thin films. The SnTe films show weak anti-localization, and the weak links of the superconducting quantum interference devices (SQUID) exhibit fully gapped proximity-induced superconductivity. Both properties give a coinciding coherence length of 120 nm. The SQUID oscillations induced by a magnetic field show 2π periodicity, possibly dominated by the bulk conductivity.

Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires

The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the doping level, it can either generate resonant states in the bulk valence band leading to enhanced thermoelectric properties, or induce superconductivity that coexists with topological states. Here we report on the vapor deposition of In-doped SnTe nanowires and the study of their surface oxidation and thermoelectric properties. The nanowire growth is assisted by Au catalysts, and their morphologies vary as a function of substrate position and temperature. Transmission electron microscopy characterization reveals the formation of an amorphous surface in single crystalline nanowires. X-ray photoelectron spectroscopy studies suggest that the nanowire surface is composed of In₂O₃, SnO₂, Te and TeO₂ which can be readily removed by argon ion sputtering. Exposure of the cleaned nanowires to atmosphere leads to rapid oxidation of the surface within only one minute. Characterization of electrical conductivity σ, thermopower S, and thermal conductivity κ was performed on the same In-doped nanowire which shows suppressed σ and κ but enhanced S yielding an improved thermoelectric figure of merit ZT compared to the undoped SnTe.

Topological superconductors: a review

This review elaborates pedagogically on the fundamental concept, basic theory, expected properties, and materials realizations of topological superconductors. The relation between topological superconductivity and Majorana fermions are explained, and the difference between dispersive Majorana fermions and a localized Majorana zero mode is emphasized. A variety of routes to topological superconductivity are explained with an emphasis on the roles of spin-orbit coupling. Present experimental situations and possible signatures of topological superconductivity are summarized with an emphasis on intrinsic topological superconductors.

Spin-orbit coupling enhanced superconductivity in Bi-rich compounds ABi₃ (A = Sr and Ba)

Recently, Bi-based compounds have attracted attentions because of the strong spin-orbit coupling (SOC). In this work, we figured out the role of SOC in ABi₃ (A = Sr and Ba) by theoretical investigation of the band structures, phonon properties, and electron-phonon coupling. Without SOC, strong Fermi surface nesting leads to phonon instabilities in ABi₃. SOC suppresses the nesting and stabilizes the structure. Moreover, without SOC the calculation largely underestimates the superconducting transition temperatures (T_c), while with SOC the calculated T_c are very close to those determined by measurements on single crystal samples. The SOC enhanced superconductivity in ABi₃ is due to not only the SOC induced phonon softening, but also the SOC related increase of electron-phonon coupling matrix elements. ABi₃ can be potential platforms to construct heterostructure of superconductor/topological insulator to realize topological superconductivity.

Revealing Surface States in In-Doped SnTe Nanoplates with Low Bulk Mobility

Indium (In) doping in topological crystalline insulator SnTe induces superconductivity, making In-doped SnTe a candidate for a topological superconductor. SnTe nanostructures offer well-defined nanoscale morphology and high surface-to-volume ratios to enhance surface effects. Here, we study In-doped SnTe nanoplates, In(x)Sn(1-x)Te, with x ranging from 0 to 0.1 and show they superconduct. More importantly, we show that In doping reduces the bulk mobility of In(x)Sn(1-x)Te such that the surface states are revealed in magnetotransport despite the high bulk carrier density. This is manifested by two-dimensional linear magnetoresistance in high magnetic fields, which is independent of temperature up to 10 K. Aging experiments show that the linear magnetoresistance is sensitive to ambient conditions, further confirming its surface origin. We also show that the weak antilocalization observed in In(x)Sn(1-x)Te nanoplates is a bulk effect. Thus, we show that nanostructures and reducing the bulk mobility are effective strategies to reveal the surface states and test for topological superconductors.

Scanning tunneling microscopy studies of topological insulators

Scanning tunneling microscopy (STM), with surface sensitivity, is an ideal tool to probe the intriguing properties of the surface state of topological insulators (TIs) and topological crystalline insulators (TCIs). We summarize the recent progress on those topological phases revealed by STM studies. STM observations have directly confirmed the existence of the topological surface states and clearly revealed their novel properties. We also discuss STM work on magnetic doped TIs, topological superconductors and crystalline symmetry-protected surface states in TCIs. The studies have greatly promoted our understanding of the exotic properties of the new topological phases, as well as put forward new challenges. STM will continue to play an important role in this rapidly growing field from the point view of both fundamental physics and applications.

Experimental observation of Dirac-like surface states and topological phase transition in Pb(1-x)Sn(x)Te(111) films

The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high-quality Pb(1-x)Sn(x)Te(111) films and investigated the TCI phase by in situ angle-resolved photoemission spectroscopy. Pb(1-x)Sn(x)Te(111) films undergo a topological phase transition from a trivial insulator to TCI via increasing the Sn/Pb ratio, accompanied by a crossover from n-type to p-type doping. In addition, a hybridization gap is opened in the surface states when the thickness of the film is reduced to the two-dimensional limit. The work demonstrates an approach to manipulating the topological properties of TCI, which is of importance for future fundamental research and applications based on TCI.