Interfacial bonding and structure of Bi2Te3 topological insulator films on Si(111) determined by surface x-ray scattering

Quantum transport and potential of topological states for thermoelectricity in Bi2Te3thin films

This paper reviews recent developments in quantum transport and it presents current efforts to explore the contribution of topological insulator boundary states to thermoelectricity in Bi₂Te₃thin films. Although Bi₂Te₃has been used as a thermoelectric material for many years, it is only recently that thin films of this material have been synthesized as 3D topological insulators with interesting physics and potential applications related to topologically protected surface states. A major bottleneck in Bi₂Te₃thin films has been eliminating its bulk conductivity while increasing its crystal quality. The ability to grow epitaxial films with high crystal quality and to fabricate sophisticated Bi₂Te₃-based devices is attractive for implementing a variety of topological quantum devices and exploring the potential of topological states to improve thermoelectric properties. Special emphasis is laid on preparing low-defect-density Bi₂Te₃epitaxial films, gate-tuning of normal-state transport and Josephson supercurrent in topological insulator/superconductor hybrid devices. Prospective quantum transport experiments on Bi₂Te₃thin-film devices are discussed as well. Finally, an overview of current progress on the contribution of topological insulator boundary states to thermoelectricity is presented. Future explorations to reveal the potential of topological states for improving thermoelectric properties of Bi₂Te₃films and realizing high-performance thermoelectric devices are discussed.

Evolution of the magnetic hyperfine field profiles in an ion-irradiated Fe60Al40 film measured by nuclear resonant reflectivity

Nuclear resonant reflectivity (NRR) from an Fe₆₀Al₄₀ film was measured using synchrotron radiation at several grazing angles near the critical angle of total external reflection. Using laterally resolved measurements after irradiation with 20 keV Ne⁺ ions of gradually varying fluence of 0-3.0 × 10¹⁴ ions cm^-2, the progressive creation of the ferromagnetic A2 phase with increasing ion fluence was confirmed. The observed depth selectivity of the method has been explained by application of the standing wave approach. From the time spectra of the nuclear resonant scattering in several reflection directions the depth profiles for different hyperfine fields were extracted. The results show that the highest magnetic hyperfine fields (∼18-23 T) are initially created in the central part of the film and partially at the bottom interface with the SiO₂ substrate. The evolution of the ferromagnetic onset, commencing at a fixed depth within the film and propagating towards the interfaces, has been directly observed. At higher fluence (3.0 × 10¹⁴ ions cm^-2) the depth distribution of the ferromagnetic fractions became more homogeneous across the film depth, in accordance with previous results.

Electronic structure evolution of single bilayer Bi(1 1 1) film on 3D topological insulator Bi2Se x Te3-x surfaces

The electronic state evolution of single bilayer (1BL) Bi(1 1 1) deposited on three-dimensional (3D) Bi2Se x Te3-x topological insulators at x  =  0, 1.26, 2, 2.46, 3 is systematically investigated by angle-resolved photoemission spectroscopy (ARPES). Our results indicate that the electronic structures of epitaxial Bi films are strongly influenced by the substrate especially the topmost sublayer near the Bi films, manifesting in two main aspects. First, the Se atoms cause a stronger charge transfer effect, which induces a giant Rashba-spin splitting, while the low electronegativity of Te atoms induces a strong hybridization at the interface. Second, the lattice strain notably modifies the band dispersion of the surface bands. Furthermore, our experimental results are elucidated by first-principles band structure calculations.

Surface reconstruction-induced coincidence lattice formation between two-dimensionally bonded materials and a three-dimensionally bonded substrate

Sb2Te3 films are used for studying the epitaxial registry between two-dimensionally bonded (2D) materials and three-dimensional bonded (3D) substrates. In contrast to the growth of 3D materials, it is found that the formation of coincidence lattices between Sb2Te3 and Si(111) depends on the geometry and dangling bonds of the reconstructed substrate surface. Furthermore, we show that the epitaxial registry can be influenced by controlling the Si(111) surface reconstruction and confirm the results for ultrathin films.