Tuning magnetic anisotropy in metallic multilayers by surface charging: an ab initio study

Manipulations of Electronic and Spin States in Co-Quantum Dot/WS2 Heterostructure on a Metal-Dielectric Composite Substrate by Controlling Interfacial Carriers

Charge and spin are two intrinsic attributes of carriers governing almost all of the physical processes and operation principles in materials. Here, we demonstrate the manipulation of electronic and spin states in designed Co-quantum dot/WS2 (Co-QDs/WS2) heterostructures by employing a metal-dielectric composite substrate and via scanning tunneling microscope. By repeatedly scanning under a unipolar bias, switching the bias polarity, or applying a pulse through nonmagnetic or magnetic tips, the Co-QDs morphologies exhibit a regular and reproducible transformation between bright and dark dots. First-principles calculations reveal that these tunable characters are attributed to the variation of density of states and the transition of magnetic anisotropy energy induced by carrier accumulation. It also suggests that the metal-dielectric composite substrate is successful in creating the interfacial potential for carrier accumulation and realizes the electrically controllable modulations. These results will promote the exploration of electron-matter interactions in quantum systems and provide an innovative way to facilitate the development of spintronics.

Engineering Magnetic Anisotropy of Rhenium Atom in Nitrogenized Divacancy of Graphene

The effects of charging on the magnetic anisotropy energy (MAE) of rhenium atom in nitrogenized-divacancy graphene (Re@NDV) are investigated using density functional theory (DFT) calculations. High-stability and large MAE of 71.2 meV are found in Re@NDV. The more exciting finding is that the magnitude of MAE of a system can be tuned by charge injection. Moreover, the easy magnetization direction of a system may also be controlled by charge injection. The controllable MAE of a system is attributed to the critical variation in d_z² and d_yz of Re under charge injection. Our results show that Re@NDV is very promising in high-performance magnetic storage and spintronics devices.

Tuning the magnetic anisotropy energy by external electric fields of CoPt dimers deposited on graphene

In the framework of first-principles calculations, we comprehensively investigate the external electric-field (EF) manipulation of the magnetic anisotropy energy (MAE) of alloyed CoPt dimers deposited on graphene. In particular, we focus on the possibility of tuning the MAE barriers under the action of external EFs and on the effects of Co-substitution. Among the various considered structures, the lowest-energy configurations were the hollow-upright and top-upright, having the Co-atom closest to the graphene layer. The optimal and higher energy configurations were related to the electronic structure through the local density of states and hybridizations between the transition-metal (TM) atoms of the dimer and graphene. In contrast to Co₂/graphene [M. Tanveer, J. Dorantes-Dávila and G. M. Pastor, Phys. Rev. B, 2017, 96(22), 224413.], the CoPt dimer having the hollow-upright ground-state configuration, exhibits a much lower value of the MAE (about |ΔE| ≃ 4.5 meV per atom) and the direction of the magnetization lies in the graphene layer. Moreover, we observe a spin-reorientation transition occurring at ε_z ≃ 0.5 V Å^-1, which opens the possibility of inducing magnetization switching by external electric fields. The microscopic origin of the changes of the MAE associated with changes in the EF has been qualitatively related to the details of the electronic structure by analyzing the local density of states and to the spin-dependent electronic densities close to the Fermi energy. Finally, the role of local environment was quantified by performing electronic structure and magnetic calculations on several higher-energy structure configurations.

Large perpendicular magnetic anisotropy of transition metal dimers driven by polarization switching of two-dimensional ferroelectric In2Se3 substrate

Large perpendicular magnetic anisotropy (MA) is highly desirable for realizing atomic-scale magnetic data storage which represents the ultimate limit of the density of magnetic recording. In this work, we study...

The large perpendicular magnetic anisotropy induced at the Co2FeAl/MgAl2O4interface and tuned with the strain, voltage and charge doping by first principles study

The heterostructures with high perpendicular magnetic anisotropy (PMA) have advantages for the application of the nonvolatile memories with long data retention time and small size. The interface structure and magnetic anisotropy energy (MAE) of Co₂FeAl/MgAl₂O₄heterostructures were studied by first principles calculations. The stable interface atomic arrangement is the Co or FeAl layer located above the equatorial oxygen coordinate in the distorted oxygen octahedrons. The Co-O interface can induce large effective PMA up to 4.54 mJ m^-2, but this structure is a metastable structure. Meanwhile, the effective MAE decreases linearly as the thickness of the ferromagnetic layer increase. The effective MAE for the FeAl-O interface is only 1.3 mJ m^-2, while the maximum thickness of Co₂FeAl layer that maintains the PMA effect is about 1.717 nm. These values are very close to the experimental results. Throughd-orbital-resolved MAE, we confirm that the interface PMA is mainly originated from the hybridization betweendxy,dyzanddz2orbitals of interface 3datoms. In addition, the compressive strain, negative electric field and hole doping can significantly enhance the effective PMA of FeAl-O interface. At the same time, Co-O interface will become the most stable structure by tuning the Mg/Al ratio in the spinel layers. The large effective PMA makes the Co₂FeAl/MgAl₂O₄junction a perfect candidate for the next-generation of non-volatile spintronic devices.

Magnetism manipulation of Co n -adsorbed monolayer WS2 through charge injection

The design and manipulation of magnetism in low-dimensional systems are desirable for the development of spin electronic devices. Here, we design two kinds of Co-adsorbed monolayer WS₂ frameworks, i.e. Co₁/WS₂ and Co₂/WS₂, and comprehensively explore the dependences of their magnetic properties on injected charge by using first-principles calculations. The value of magnetic moment can be tuned almost linearly through injecting charge due to the modulated interaction and charge transferring between Co atom and monolayer WS₂. A transition from ferromagnetism to non-ferromagnetism occurs in Co₁/WS₂ system when 1 e/unit cell charge is injected. Furthermore, the magnetic anisotropy can be manipulated by injecting charge as well. The magnetic anisotropy energy (MAE) in Co₁/WS₂ system sharply increases from -4.16 to 2.47 (0.99) meV when injected charge vary from 0.0 to 0.2 (-0.2) e/unit cell, meaning a transition of the magnetic easy axis from in-plane to out-of-plane direction. Similarly, in Co₂/WS₂ system, the magnetic easy axis also can be modified to out-of-plane direction through injecting 0.1 e/unit cell charge. It is found that the changes of Co-3d states are responsible for the tunable magnetic anisotropy. This work provides a theoretical understanding on effective manipulation of magnetism in low-dimensional system.

Large Perpendicular Magnetocrystalline Anisotropy at the Fe/Pb(001) Interface

The search for ultrathin magnetic films with large perpendicular magnetocrystalline anisotropy (PMA) has been inspired for years by the continuous miniaturization of magnetic units in spintronics devices. The common magnetic materials used in research and applications are based on Fe because the pure Fe metal is the best yet simple magnetic material from nature. Through systematic first-principles calculations, we explored the possibility to produce large PMA with ultrathin Fe on non-noble and non-magnetic Pb(001) substrate. Interestingly, huge magnetocrystalline anisotropy energy (MAE) of 7.6 meV was found in the Pb/Fe/Pb(001) sandwich structure with only half monolayer Fe. The analysis of electronic structures reveals that the magnetic proximity effect at the interface is responsible for this significant enhancement of MAE. The MAE further increases to 13.6 meV with triply repeated capping Pb and intermediate Fe layers. Furthermore, the MAE can be tuned conveniently by charge injection.

Engineering magnetic anisotropy and magnetization switching in multilayers by strain

The effect of the strain on the magnetic properties of metallic multilayers has been investigated by ab initio studies. Our results indicate that the magnetic anisotropy energy (MAE) of an Fe(001) surface can be drastically enhanced by capping with 5d elements. By choosing Ir-Fe multilayers as a model system, we demonstrate that the MAE which depends on the composition and the structure of the multilayers can be tuned in a large range by strain. Furthermore, our results show that not only the amplitude of the MAE but also the easy axis of Pt-Fe multilayers can be engineered by strain. Magnetization switching by strain is also investigated.

Chemically Engineering Magnetic Anisotropy of 2D Metalloporphyrin

Continuous miniaturization of magnetic units in spintronics devices inspires efforts to search for novel 2D magnetic materials with giant magnetic anisotropy energy (MAE). Through systematic first-principles calculations, large MAE of 24 meV in W or Re embedded 2D polyporphyrin frameworks is found. Interestingly, the MAE can be enhanced up to 60 meV, through replacing the hydrogen atoms on the edges of the Re based 2D polyporphyrin framework by hydroxyl and amino radicals. Analysis of the electronic structures reveals that the enhancement of MAE is mainly attributed to charge redistributions and energy shifts of Re 5d orbitals induced by the functional radicals. The findings pave a new and feasible way for tailoring the magnetic properties of magnetic organic materials to fulfill the criteria for applications in spintronics devices at high temperature.

Electric-field-driven magnetization switching and nonlinear magnetoelasticity in Au/FeCo/MgO heterostructures

Voltage-induced switching of magnetization, as opposed to current-driven spin transfer torque switching, can lead to a new paradigm enabling ultralow-power and high density instant-on nonvolatile magnetoelectric random access memory (MeRAM). To date, however, a major bottleneck in optimizing the performance of MeRAM devices is the low voltage-controlled magnetic anisotropy (VCMA) efficiency (change of interfacial magnetic anisotropy energy per unit electric field) leading in turn to high switching energy and write voltage. In this work, employing ab initio electronic structure calculations, we show that epitaxial strain, which is ubiquitous in MeRAM heterostructures, gives rise to a rich variety of VCMA behavior with giant VCMA coefficient (~1800 fJ V(-1)m(-1)) in Au/FeCo/MgO junction. The heterostructure also exhibits a strain-induced spin-reorientation induced by a nonlinear magnetoelastic coupling. The results demonstrate that the VCMA behavior is universal and robust in magnetic junctions with heavy metal caps across the 5d transition metals and that an electric-field-driven magnetic switching at low voltage is achievable by design. These findings open interesting prospects for exploiting strain engineering to harvest higher efficiency VCMA for the next generation MeRAM devices.

Giant magnetocrystalline anisotropy of 5d transition metal-based phthalocyanine sheet

Giant magnetocrystalline anisotropy energy can be achieved under electric field or biaxial strain of 5d transition metal-based phthalocyanine sheet.

Tuning magnetic properties of antiferromagnetic chains by exchange interactions: ab initio studies

The possibility of using exchange interactions to manipulate the spin state of an antiferromagnetic nanostructure is explored using ab initio calculations.

Reversible switching of magnetic states by electric fields in nitrogenized-divacancies graphene decorated by tungsten atoms

Magnetic graphene-based materials have shown great potential for developing high-performance electronic devices at sub-nanometer such as spintronic data storage units. However, a significant reduction of power consumption and great improvement of structural stability are needed before they can be used for actual applications. Based on the first-principles calculations, here we demonstrate that the interaction between tungsten atoms and nitrogenized-divacancies (NDVs) in the hybrid W@NDV-graphene can lead to high stability and large magnetic anisotropy energy (MAE). More importantly, reversible switching between different magnetic states can be implemented by tuning the MAE under different electric fields, and very low energy is consumed during the switching. Such controllable switching of magnetic states is ascribed to the competition between the tensile stain and orbital magnetic anisotropy, which originates from the change in the occupation number of W-5d orbitals under the electric fields. Our results provide a promising avenue for developing high-density magnetic storage units or multi-state logical switching devices with ultralow power at sub-nanometer.

Controlling magnetism on metal surfaces with non-magnetic means: electric fields and surface charging

We review the state of the art of surface magnetic property control with non-magnetic means, concentrating on metallic surfaces and techniques such as charge-doping or external electric field (EEF) application. Magneto-electric coupling via EEF-based charge manipulation is discussed as a way to tailor single adatom spins, exchange interaction between adsorbates or anisotropies of layered systems. The mechanisms of paramagnetic and spin-dependent electric field screening and the effect thereof on surface magnetism are discussed in the framework of theoretical and experimental studies. The possibility to enhance the effect of EEF by immersing the target system into an electrolyte or ionic liquid is discussed by the example of substitutional impurities and metallic alloy multilayers. A similar physics is pointed out for the case of charge traps, metallic systems decoupled from a bulk electron bath. In that case the charging provides the charge carrier density changes necessary to affect the magnetic moments and anisotropies in the system. Finally, the option of using quasi-free electrons rather than localized atomic spins for surface magnetism control is discussed with the example of Shockley-type metallic surface states confined to magnetic nanoislands.