Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural perfection have been grown using low-temperature molecular-beam epitaxy. Post-growth annealing of the samples improves their structural and magnetic properties and increases the hole concentration in the layers. Hard X-ray angle-resolved photoemission spectroscopy reveals a strongly dispersing band in the Mn-doped layers, which crosses the Fermi energy and is caused by the high concentration of Mn-induced itinerant holes located in the valence band. An increased density of states near the Fermi level is attributed to additional localized Mn states. In addition to a decrease in the chemical potential with increasing Mn doping, we find significant changes in the valence band caused by the incorporation of a small atomic fraction of Bi atoms. The spin-orbit split-off band is shifted to higher binding energies, which is inconsistent with the impurity band model of the band structure in (Ga,Mn)As. Spectroscopic ellipsometry and modulation photoreflectance spectroscopy results confirm the valence band modifications in the investigated layers.

Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.

Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor

The band ordering of semiconductors is an important factor in determining the mobility and coherence of the wave function of carriers, and is thus a key factor in device performance. However, in heavily doped semiconductors, the impurities substantially disturb the band ordering, leading to significant degradation in performance. Here, we present the unexpected finding that the band ordering is suddenly restored in Mn-doped GaAs ((Ga,Mn)As) when the Mn concentration slightly exceeds ∼0.7% despite the extremely high doping concentration; this phenomenon is very difficult to predict from the general behaviour of doped semiconductors. This phenomenon occurs with a ferromagnetic phase transition, which is considered to have a crucial role in generating a well-ordered band structure. Our findings offer possibilities for ultra-high-speed quantum-effect spin devices based on semiconductors.

As semiconductors are doped with impurities, their useful electrical transport properties are degraded as their band structures are increasingly modified. Here, the authors demonstrate that the band ordering is restored in Mn-doped GaAs above a ferromagnetic transition at a critical concentration.

Quantum anomalous Hall effect in magnetically doped InAs/GaSb quantum wells

The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr-doped (Bi,Sb)(2)Te(3) at a low temperature (∼ 30 mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional diluted magnetic semiconductors with magnetically doped InAs/GaSb type-II quantum wells. Based on a four-band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation of Hall conductance. The parameter regime for the quantum anomalous Hall phase is identified based on the eight-band Kane model. The high sample quality and strong exchange coupling make magnetically doped InAs/GaSb quantum wells good candidates for realizing the quantum anomalous Hall insulator at a high temperature.

Correlation effects in fcc-Fe(x)Ni(1-x) alloys investigated by means of the KKR-CPA

The electronic structure and magnetic properties of the disordered alloy system fcc-FexNi1-x (fcc: face centered cubic) have been investigated by means of the KKR-CPA (Korringa-Kohn-Rostoker coherent potential approximation) band structure method. To investigate the impact of correlation effects, the calculations have been performed on the basis of the LSDA (local spin density approximation), the LSDA + U as well as the LSDA + DMFT (dynamical mean field theory). It turned out that the inclusion of correlation effects hardly changed the spin magnetic moments and the related hyperfine fields. The spin-orbit induced orbital magnetic moments and hyperfine fields, on the other hand, show a pronounced and element-specific enhancement. These findings are in full accordance with the results of a recent experimental study.