Theoretical analysis of a dual-probe scanning tunneling microscope setup on graphene

New imaging modes for analyzing suspended ultra-thin membranes by double-tip scanning probe microscopy

Scanning probe microscopy (SPM) techniques are amongst the most important and versatile experimental methods in surface- and nanoscience. Although their measurement principles on rigid surfaces are well understood and steady progress on the instrumentation has been made, SPM imaging on suspended, flexible membranes remains difficult to interpret. Due to the interaction between the SPM tip and the flexible membrane, morphological changes caused by the tip can lead to deformations of the membrane during scanning and hence significantly influence measurement results. On the other hand, gaining control over such modifications can allow to explore unknown physical properties and functionalities of such membranes. Here, we demonstrate new types of measurements that become possible with two SPM instruments (atomic force microscopy, AFM, and scanning tunneling microscopy, STM) that are situated on opposite sides of a suspended two-dimensional (2D) material membrane and thus allow to bring both SPM tips arbitrarily close to each other. One of the probes is held stationary on one point of the membrane, within the scan area of the other probe, while the other probe is scanned. This way new imaging modes can be obtained by recording a signal on the stationary probe as a function of the position of the other tip. The first example, which we term electrical cross-talk imaging (ECT), shows the possibility of performing electrical measurements across the membrane, potentially in combination with control over the forces applied to the membrane. Using ECT, we measure the deformation of the 2D membrane around the indentation from the AFM tip. In the second example, which we term mechanical cross-talk imaging (MCT), we disentangle the mechanical influence of a scanning probe tip (e.g. AFM) on a freestanding membrane by means of independently recording the response of the opposing tip. In this way we are able to separate the tip-induced membrane deformation topography from the (material-dependent) force between the tip and the membrane. Overall, the results indicate that probing simultaneously both surfaces of ultra-thin membranes, such as suspended 2D materials, could provide novel insights into the electronic properties of the materials.

Fabrication of on-chip probes for double-tip scanning tunneling microscopy

A reduction of the interprobe distance in multiprobe and double-tip scanning tunneling microscopy to the nanometer scale has been a longstanding and technically difficult challenge. Recent multiprobe systems have allowed for significant progress by achieving distances of ~30 nm using two individually driven, traditional metal wire tips. For situations where simple alignment and fixed separation can be advantageous, we present the fabrication of on-chip double-tip devices that incorporate two mechanically fixed gold tips with a tip separation of only 35 nm. We utilize the excellent mechanical, insulating and dielectric properties of high-quality SiN as a base material to realize easy-to-implement, lithographically defined and mechanically stable tips. With their large contact pads and adjustable footprint, these novel tips can be easily integrated with most existing commercial combined STM/AFM systems.

Nanofabricated tips for device-based scanning tunneling microscopy

We report on the fabrication and performance of a new kind of tip for scanning tunneling microscopy. By fully incorporating a metallic tip on a silicon chip using modern micromachining and nanofabrication techniques, we realize so-called smart tips and show the possibility of device-based STM tips. Contrary to conventional etched metal wire tips, these can be integrated into lithographically defined electrical circuits. We describe a new fabrication method to create a defined apex on a silicon chip and experimentally demonstrate the high performance of the smart tips, both in stability and resolution. In situ tip preparation methods are possible and we verify that they can resolve the herringbone reconstruction and Friedel oscillations on Au(111) surfaces. We further present an overview of possible applications.

Electronic transport in planar atomic-scale structures measured by two-probe scanning tunneling spectroscopy

Miniaturization of electronic circuits into the single-atom level requires novel approaches to characterize transport properties. Due to its unrivaled precision, scanning probe microscopy is regarded as the method of choice for local characterization of atoms and single molecules supported on surfaces. Here we investigate electronic transport along the anisotropic germanium (001) surface with the use of two-probe scanning tunneling spectroscopy and first-principles transport calculations. We introduce a method for the determination of the transconductance in our two-probe experimental setup and demonstrate how it captures energy-resolved information about electronic transport through the unoccupied surface states. The sequential opening of two transport channels within the quasi-one-dimensional Ge dimer rows in the surface gives rise to two distinct resonances in the transconductance spectroscopic signal, consistent with phase-coherence lengths of up to 50 nm and anisotropic electron propagation. Our work paves the way for the electronic transport characterization of quantum circuits engineered on surfaces.

Measuring electronic transport at the atomic scale requires atom precise contacts. Here, the authors demonstrate quasi-one-dimensional electronic transport along a single dimer row on a germanium surface using a two probe scanning tunneling microscopy protocol.

Finite-size effects on electronic structure and local properties in passivated AA-stacked bilayer armchair-edge graphene nanoribbons

Based on the tight-binding model and dual-probe scanning tunneling microscopy technology, we theoretically investigate the electronic structure and local property in the passivated AA-stacked bilayer armchair-edge graphene nanoribbons (AABLAGNRs). We show that they are highly sensitive to the size of the ribbons, which is evidently different from the single-layer armchair-edge graphene nanoribbons. The '3p' rule only applies to the narrow AABLGNRs. Namely, in the passivated 3p- and (3p  +  1)-AABLGNRs, the narrow ribbons are semiconducting while the medium and wide ribbons are metallic. Although the passivated (3p  +  2)-AABLGNRs are metallic, the '3j' rule only applies to the narrow and medium ribbons. Namely, electrons are in the semiconducting states at sites of line 3j while they are in the metallic states at other sites. This induces a series of parallel and discrete metallic channels, consisting of lines 3j  -  1 and 3j  -  2, for the low-energy electronic transports. In the passivated wide (3p  +  2)-AABLGNRs, all electrons are in the metallic states. Additionally, the '3p' and '3j' rules are controllable to disappear and reappear by applying an external perpendicular electric field. Resultantly, an electric filed-driven current switch can be realized in the passivated narrow and medium (3p  +  2)-AABLGNRs.

Graphene Nanobubbles as Valley Filters and Beam Splitters

The energy band structure of graphene has two inequivalent valleys at the K and K^{'} points of the Brillouin zone. The possibility to manipulate this valley degree of freedom defines the field of valleytronics, the valley analogue of spintronics. A key requirement for valleytronic devices is the ability to break the valley degeneracy by filtering and spatially splitting valleys to generate valley polarized currents. Here, we suggest a way to obtain valley polarization using strain-induced inhomogeneous pseudomagnetic fields (PMFs) that act oppositely on the two valleys. Notably, the suggested method does not involve external magnetic fields, or magnetic materials, unlike previous proposals. In our proposal the strain is due to experimentally feasible nanobubbles, whose associated PMFs lead to different real space trajectories for K and K^{'} electrons, thus allowing the two valleys to be addressed individually. In this way, graphene nanobubbles can be exploited in both valley filtering and valley splitting devices, and our simulations reveal that a number of different functionalities are possible depending on the deformation field.

Electron Interference in Ballistic Graphene Nanoconstrictions

We realize nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC mesa structures. The high quality of our devices allows the observation of a number of electronic quantum interference phenomena. The transmissions of Fabry-Perot-like resonances are probed by in situ transport measurements at various temperatures. The energies of the resonances are determined by the size of the constrictions, which can be controlled precisely using STM lithography. The temperature and size dependence of the measured conductances are in quantitative agreement with tight-binding calculations. The fact that these interference effects are visible even at room temperature makes the reported devices attractive as building blocks for future carbon based electronics.

Conductance of graphene flakes contacted at their corners

Linear conductance of junctions formed by graphene flakes with the order of the nanometer-thick electrodes attached at the corners of the flakes is studied. The explored structures have sizes up to 20,000 atoms and the conductance is studied as a function of applied gate voltage varied around the Fermi level. The finding, obtained computationally, is that junctions formed by armchair-edge flakes with the electrodes connected at the acute-angle corners block the electron transport while only junctions with such electrodes at the obtuse-angle corners tend to provide the high electrical conductance typical for metallic GNRs. The finding in the case of zig-zag edges is similar with the exception of a relatively narrow gate voltage interval in which each studied junction is highly conductive as mediated by the edge states. The contrast between the conductive and insulating setups is typically several orders of magnitude in terms of ratio of their conductances. The main results of the paper also remain to a large extent valid in the presence of edge disorder.