Quantum transport of disordered Weyl semimetals at the nodal point

Room-temperature valley transistors for low-power neuromorphic computing

Valley pseudospin is an electronic degree of freedom that promises highly efficient information processing applications. However, valley-polarized excitons usually have short pico-second lifetimes, which limits the room-temperature applicability of valleytronic devices. Here, we demonstrate room-temperature valley transistors that operate by generating free carrier valley polarization with a long lifetime. This is achieved by electrostatic manipulation of the non-trivial band topology of the Weyl semiconductor tellurium (Te). We observe valley-polarized diffusion lengths of more than 7 μm and fabricate valley transistors with an ON/OFF ratio of 105 at room temperature. Moreover, we demonstrate an ion insertion/extraction device structure that enables 32 non-volatile memory states with high linearity and symmetry in the Te valley transistor. With ultralow power consumption (~fW valley contribution), we enable the inferring process of artificial neural networks, exhibiting potential for applications in low-power neuromorphic computing.

Many-impurity scattering on the surface of a topological insulator

We theoretically address the impact of a random distribution of non-magnetic impurities on the electron states formed at the surface of a topological insulator. The interaction of electrons with the impurities is accounted for by a separable pseudo-potential method that allows us to obtain closed expressions for the density of states. Spectral properties of surface states are assessed by means of the Green’s function averaged over disorder realisations. For comparison purposes, the configurationally averaged Green’s function is calculated by means of two different self-consistent methods, namely the self-consistent Born approximation (SCBA) and the coherent potential approximation (CPA). The latter is often regarded as the best single-site theory for the study of the spectral properties of disordered systems. However, although a large number of works employ the SCBA for the analysis of many-impurity scattering on the surface of a topological insulator, CPA studies of the same problem are scarce in the literature. In this work, we find that the SCBA overestimates the impact of the random distribution of impurities on the spectral properties of surface states compared to the CPA predictions. The difference is more pronounced when increasing the magnitude of the disorder.

Intrinsic Mechanism for Anisotropic Magnetoresistance and Experimental Confirmation in Co_{x}Fe_{1-x} Single-Crystal Films

Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co_{x}Fe_{1-x} alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special k points can be shifted towards or away from the Fermi energy by varying the alloy composition and hence the exchange splitting, thus allowing AMR tunability. The prediction is confirmed by delicate transport measurements, which further reveal a reciprocal relationship of the longitudinal and transverse resistivities along different crystal axes.

Lasing with Topological Weyl Semimetal

Lasing behavior of optically active planar topological Weyl semimetal (TWS) is investigated in view of the Kerr and Faraday rotations. Robust topological character of TWS is revealed by the presence of Weyl nodes and relevant surface conductivities. We focus our attention on the surfaces where no Fermi arcs are formed, and thus Maxwell equations contain topological terms. We explicitly demonstrate that two distinct lasing modes arise because of the presence of effective refractive indices which lead to the birefringence phenomena. Transfer matrix is constructed in such a way that reflection and transmission amplitudes involve 2 × 2 matrix-valued components describing the bimodal character of the TWS laser. We provide associated parameters of the topological laser system yielding the optimal impacts. We reveal that gain values corresponding to the lasing threshold display a quantized behavior, which occurs due to topological character of the system. Our proposal is supported by the corresponding graphical demonstrations. Our observations and predictions suggest a concrete way of forming TWS laser and coherent perfect absorber; and are awaited to be confirmed by an experimental realization based on our computations.

Metal–Insulator Transition in Three-Dimensional Semiconductors

We use a random gap model to describe a metal–insulator transition in three-dimensional semiconductors due to doping, and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry breaking results in metallic behavior, whereas the insulating regime is characterized by the absence of spontaneous symmetry breaking. The transition is continuous for the average conductivity with critical exponent equal to 1. Away from the critical point, the exponent is roughly 0.6, which may explain experimental observations of a crossover of the exponent from 1 to 0.5 by going away from the critical point.

Topological Amorphous Metals

We study amorphous systems with completely random sites and find that, through constructing and exploring a concrete model Hamiltonian, such a system can host an exotic phase of topological amorphous metal in three dimensions. In contrast to the traditional Weyl semimetals, topological amorphous metals break translational symmetry, and thus they cannot be characterized by the first Chern number defined based on the momentum space band structures. Instead, their topological properties will manifest in the Bott index and the Hall conductivity as well as the surface states. By studying the energy band and quantum transport properties, we find that topological amorphous metals exhibit a diffusive metal behavior. We further introduce a practical experimental proposal with electric circuits where the predicted phenomena can be observed using state-of-the-art technologies. Our results open the door to exploring topological gapless phenomena in amorphous systems.

Vanishing Density of States in Weakly Disordered Weyl Semimetals

The Brillouin zone of the clean Weyl semimetal contains points at which the density of states (DOS) vanishes. Previous work suggested that below a certain critical concentration of impurities this feature is preserved including in the presence of disorder. This result got criticized for its neglect of rare disorder fluctuations which might bind quantum states and hence generate a finite DOS. We here show that in spite of their existence these states are so fragile that their contribution effectively vanishes when averaged over continuous disorder distributions. This means that the integrity of the nodal points remains protected for weak disorder.

Short Note on the Density of States in 3D Weyl Semimetals

The average density of states in a disordered three-dimensional Weyl system is discussed in the case of a continuous distribution of random scattering. Our results clearly indicate that the average density of states does not vanish, reflecting the absence of a critical point for a metal-insulator transition. This calculation supports recent suggestions of an avoided quantum critical point in the disordered three-dimensional Weyl semimetal. However, the effective density of states can be very small such that the saddle-approximation with a vanishing density of states might be valid for practical cases.

Disorder-Driven Quantum Transition in Relativistic Semimetals: Functional Renormalization via the Porous Medium Equation

In the presence of randomness, a relativistic semimetal undergoes a quantum transition towards a diffusive phase. A standard approach relates this transition to the U(N) Gross-Neveu model in the limit of N→0. We show that the corresponding fixed point is infinitely unstable, demonstrating the necessity to include fluctuations beyond the usual Gaussian approximation. We develop a functional renormalization group method amenable to include these effects and show that the disorder distribution renormalizes following the so-called porous medium equation. We find that the transition is controlled by a nonanalytic fixed point drastically different from that of the U(N) Gross-Neveu model. Our approach provides a unique mechanism of spontaneous generation of a finite density of states and also characterizes the scaling behavior of the broad distribution of fluctuations close to the transition. It can be applied to other problems where nonanalytic effects may play a role, such as the Anderson localization transition.

Weyl Semimetal to Metal Phase Transitions Driven by Quasiperiodic Potentials

We explore the stability of three-dimensional Weyl and Dirac semimetals subject to quasiperiodic potentials. We present numerical evidence that the semimetal is stable for weak quasiperiodic potentials, despite being unstable for weak random potentials. As the quasiperiodic potential strength increases, the semimetal transitions to a metal, then to an "inverted" semimetal, and then finally to a metal again. The semimetal and metal are distinguished by the density of states at the Weyl point, as well as by level statistics, transport, and the momentum-space structure of eigenstates near the Weyl point. The critical properties of the transitions in quasiperiodic systems differ from those in random systems: we do not find a clear critical scaling regime in energy; instead, at the quasiperiodic transitions, the density of states appears to jump abruptly (and discontinuously to within our resolution).

On Anderson Localization and Chiral Anomaly in Disordered Time-Reversal Invariant Weyl Semimetals: Nonperturbative and Berry Phase Effects

Weyl semimetal, a three-dimensional electronic system with relativistic linear energy dispersion around gapless points carrying nontrivial Berry charge, is predicted to exhibit a wealth of unique response and transport properties. A crucial question is whether those properties are robust against disorder and whether Anderson localization occurs. In this work, the effects of nonperturbative topological (vortex loop) excitations and Berry phase in disordered time-reversal invariant 3d Weyl semimetal are studied. It is shown that the chiral symmetry is restored in the nonlinear sigma model describing the diffusons upon disorder average as any net topological term and its delocalization result do not take effect at sufficiently short length scales. Anderson localization occurs at sufficiently strong disorder and we predict that chirality and related phenomena disappear at such transition. Nevertheless, we uncover a mechanism that originates from Berry phase that impedes such localization effect. We show the occurrence of destructive interference between the vortex loops and between scattering paths due to the the vortex loops' Berry phase which resists the Anderson localization. We emphasize the applicability of our theory to the candidate Weyl materials where we point out the consistency of our theory with a recent experimental finding of the absent chiral anomaly in a noncentrosymmetric Weyl semimetal.

Electronic transport property in Weyl semimetal with local Weyl cone tilt

In realistic materials of Weyl semimetal (WSM), the Weyl cone tilt (WCT) is allowed due to the absence of Lorentz invariance in condensed matter physics. In this context, we theoretically study the electronic transport property in WSM with the local WCT as the scattering mechanism. In so doing, we establish an electronic transport structure of WSM with the WCT occurring only in the central region sandwiched between two pieces of semi-infinite WSM without the WCT. By means of two complementary theoretical approaches, i.e. the continuum-model method and the lattice-model method, the electronic transmission probability, the conductivity and the Fano factor as functions of the incident electron energy are calculated respectively. We find that the WCT can give rise to nontrivial intervalley scattering, as a result, the Klein tunneling is notably suppressed. More importantly, the minimal conductivity of a WSM shifts in energy from the Weyl nodal point. The Fano factor of the shot noise deviates obviously from the sub-Poissonian value in a two dimensional WSM with the WCT.

Shot noise and electronic properties in the inversion-symmetric Weyl semimetal resonant structure

Using the transfer matrix method, the authors combine the analytical formula with numerical calculation to explore the shot noise and conductance of massless Weyl fermions in the Weyl semimetal resonant junction. By varying the barrier strength, the structure of the junction, the Fermi energy, and the crystallographic angle, the shot noise and conductance can be tuned efficiently. For a quasiperiodic superlattice, in complete contrast to the conventional junction case, the effect of the disorder strength on the shot noise and conductance depends on the competition of classical tunneling and Klein tunneling. Moreover, the delta barrier structure is also vital in determining the shot noise and conductance. In particular, a universal Fano factor has been found in a single delta potential case, whereas the resonant structure of the Fano factor perfectly matches with the number of barriers in a delta potential superlattice. These results are crucial for engineering nanoelectronic devices based on this topological semimetal material.

A generic phase between disordered Weyl semimetal and diffusive metal

Quantum phase transitions of three-dimensional (3D) Weyl semimetals (WSMs) subject to uncorrelated on-site disorder are investigated through quantum conductance calculations and finite-size scaling of localization length. Contrary to previous claims that a direct transition from a WSM to a diffusive metal (DM) occurs, an intermediate phase of Chern insulator (CI) between the two distinct metallic phases should exist due to internode scattering that is comparable to intranode scattering. The critical exponent of localization length is ν [Formula: see text] 1.3 for both the WSM-CI and CI-DM transitions, in the same universality class of 3D Gaussian unitary ensemble of the Anderson localization transition. The CI phase is confirmed by quantized nonzero Hall conductances in the bulk insulating phase established by localization length calculations. The disorder-induced various plateau-plateau transitions in both the WSM and CI phases are observed and explained by the self-consistent Born approximation. Furthermore, we clarify that the occurrence of zero density of states at Weyl nodes is not a good criterion for the disordered WSM, and there is no fundamental principle to support the hypothesis of divergence of localization length at the WSM-DM transition.

Localization Effects on Magnetotransport of a Disordered Weyl Semimetal

We study longitudinal magnetotransport in a disordered Weyl semimetal taking into account localization effects in the vicinity of a Weyl node exactly. In a magnetic field, a single chiral Landau level coexists with a number of conventional nonchiral levels. Disorder scattering mixes these topologically different modes leading to very strong localization effects. We derive the average conductance as well as the full distribution function of transmission probabilities along the field direction. Remarkably, we find that localization of the nonchiral modes is greatly enhanced in a strong magnetic field with the typical localization length scaling as 1/B. Technically, we use the nonlinear sigma-model formalism with a topological term describing the chiral states. The problem is solved exactly by mapping to an equivalent transfer matrix Hamiltonian.

Accurate Determination of the Quasiparticle and Scaling Properties Surrounding the Quantum Critical Point of Disordered Three-Dimensional Dirac Semimetals

Exploiting the enabling power of the Lanczos method in momentum space, we determine accurately the quasiparticle and scaling properties of disordered three-dimensional Dirac semimetals surrounding the quantum critical point separating the semimetal and diffusive metal regimes. We unveil that the imaginary part of the quasiparticle self-energy obeys a common power law before, at, and after the quantum phase transition, but the power law is nonuniversal, whose exponent is dependent on the disorder strength. More intriguingly, whereas a common power law is also found for the real part of the self-energy before and after the phase transition, a distinctly different behavior is identified at the critical point, characterized by the existence of a nonanalytic logarithmic singularity. This nonanalytical correction serves as the very basis for the unusual power-law behaviors of the quasiparticles and many other physical properties surrounding the quantum critical point. Our approach also allows the ready and reliable determination of the scaling properties of the correlation length and dynamical exponents. We further show that the central findings are valid for both uncorrelated and correlated disorder distributions and should be directly comparable with future experimental observations.

Emergent Weyl excitations in systems of polar particles

Weyl fermions are massless chiral particles first predicted in 1929 and once thought to describe neutrinos. Although never observed as elementary particles, quasiparticles with Weyl dispersion have recently been experimentally discovered in solid-state systems causing a furore in the research community. Systems with Weyl excitations can display a plethora of fascinating phenomena and offer great potential for improved quantum technologies. Here, we show that Weyl excitations generically exist in three-dimensional systems of dipolar particles with weakly broken time-reversal symmetry (by for example a magnetic field). They emerge as a result of dipolar-interaction-induced transfer of angular momentum between the J=0 and J=1 internal particle levels. We also discuss momentum-resolved Ramsey spectroscopy methods for observing Weyl quasiparticles in cold alkaline-earth-atom systems. Our results provide a pathway for a feasible experimental realization of Weyl quasiparticles and related phenomena in clean and controllable atomic systems.

Systems with Weyl excitations can display very interesting physical phenomena. Here the authors demonstrate that Weyl excitations exist generically in 3D systems of dipolar particles following angular momentum transfer, and discuss how to observe them in cold alkaline-earth-atom systems.

Resonance states and beating pattern induced by quantum impurity scattering in Weyl/Dirac semimetals

Currently, Weyl semimetals (WSMs) are drawing great interest as a new topological nontrivial phase. When most of the studies concentrated on the clean host WSMs, it is expected that the dirty WSM system would present rich physics due to the interplay between the WSM states and the impurities embedded inside these materials. We investigate theoretically the change of local density of states in three-dimensional Dirac and Weyl bulk states scattered off a quantum impurity. It is found that the quantum impurity scattering can create nodal resonance and Kondo peak/dip in the host bulk states, remarkably modifying the pristine spectrum structure. Moreover, the joint effect of the separation of Weyl nodes and the Friedel interference oscillation causes the unique battering feature. We in detail an- alyze the different contribution from the intra- and inter-node scattering processes and present various scenarios as a consequence of competition between them. Importantly, these behaviors are sensitive significantly to the displacement of Weyl nodes in energy or momentum, from which the distinctive fingerprints can be extracted to identify various semimetal materials experimentally by employing the scanning tunneling microscope.

Universal optical conductivity of a disordered Weyl semimetal

Topological Weyl semimetals, besides manifesting chiral anomaly, can also accommodate a disorder-driven unconventional quantum phase transition into a metallic phase. A fundamentally and practically important question in this regard concerns an experimentally measurable quantity that can clearly distinguish these two phases. We show that the optical conductivity while serving this purpose can also play the role of a bonafide order parameter across such disorder-driven semimetal-metal quantum phase transition by virtue of displaying distinct scaling behavior in the semimetallic and metallic phases, as well as inside the quantum critical fan supporting a non-Fermi liquid. We demonstrate that the correction to the dielectric constant and optical conductivity in a dirty Weyl semimetal due to weak disorder is independent of the actual nature of point-like impurity scatterers. Therefore, optical conductivity can be used as an experimentally measurable quantity to study the critical properties and to pin the universality class of the disorder-driven quantum phase transition in Weyl semimetals.

Disorder and Metal-Insulator Transitions in Weyl Semimetals

The Weyl semimetal (WSM) is a newly proposed quantum state of matter. It has Weyl nodes in bulk excitations and Fermi arc surface states. We study the effects of disorder and localization in WSMs and find three novel phase transitions. (i) Two Weyl nodes near the Brillouin zone boundary can be annihilated pairwise by disorder scattering, resulting in the opening of a topologically nontrivial gap and a transition from a WSM to a three-dimensional quantum anomalous Hall state. (ii) When the two Weyl nodes are well separated in momentum space, the emergent bulk extended states can give rise to a direct transition from a WSM to a 3D diffusive anomalous Hall metal. (iii) Two Weyl nodes can emerge near the zone center when an insulating gap closes with increasing disorder, enabling a direct transition from a normal band insulator to a WSM. We determine the phase diagram by numerically computing the localization length and the Hall conductivity, and propose that the novel phase transitions can be realized on a photonic lattice.

Phonon-drag thermopower in 3D Dirac semimetals

A theory of low-temperature phonon-drag thermopower S(g) in three-dimensional (3D) Dirac semimetals has been developed considering screened electron-phonon deformation potential coupling. Numerical investigations of S(g), in the boundary scattering regime for phonons, are made in 3D Dirac semimetal Cd3As2, as a function of temperature T and electron concentration n e. S(g) is found to increase rapidly for about T  <  1 K and nearly levels off for higher T. It is also seen that S(g) increases (decreases) with decreasing n e at lower (higher) T (<2 K). A screening effect is found to be very significant, strongly affecting T and n e dependence for about  <1 K and becoming negligible at higher temperature. In the Bloch-Gruneisen (BG) regime the power laws S(g) ~ T(8) (T(4)) and S(g) ~ n(e)(-5/3)(n(e)(-1/3) with (without) screening are obtained. These laws with respect to T and n e are, respectively, characteristics of 3D phonons and Dirac 3D electrons. Comparison with diffusion thermopower S(d) shows that S (g) dominates (and is much greater than) S(d) for about T  >  0.2 K. Herring's law S(g) μ p ~ T (-1), relating phonon limited mobility μ p and S(g) in the BG regime, is shown to be valid in 3D Dirac semimetals. The results obtained here are compared with those in 3D semiconductors, low-dimensional semiconductor heterojunctions and graphene. We conclude that n e-dependent measurements, rather than T-dependent ones, provide a clearer signature of the 3D Dirac semimetal phase.

Anderson Localization and the Quantum Phase Diagram of Three Dimensional Disordered Dirac Semimetals

We study the quantum phase diagram of a three dimensional noninteracting Dirac semimetal in the presence of either quenched axial or scalar potential disorder, by calculating the average and the typical density of states as well as the inverse participation ratio using numerically exact methods. We show that as a function of the disorder strength a half-filled (i.e., undoped) Dirac semimetal displays three distinct ground states, namely an incompressible semimetal, a compressible diffusive metal, and a localized Anderson insulator, in stark contrast to a conventional dirty metal that only supports the latter two phases. We establish the existence of two distinct quantum critical points, which respectively govern the semimetal-metal and the metal-insulator quantum phase transitions and also reveal their underlying multifractal nature. Away from half-filling the (doped) system behaves as a diffusive metal that can undergo Anderson localization only, which is shown by determining the mobility edge and the phase diagram in terms of energy and disorder.

Robustness of Rashba and Dirac Fermions against Strong Disorder

By addressing the interplay between substitutional disorder and spin-orbit-coupling in chalcogenide alloys, we predict a strong robustness of spectral features at the Fermi energy. Indeed, supplementing our state of the art first-principles calculations with modeling analysis, we show that the disorder self-energy is vanishingly small close to the band gap, thus i) allowing for bulk Rashba-like spin splitting to be observed in ferroelectric alloys by means of Angle Resolved PhotoEmission Spectroscopy, and ii) protecting the band-character inversion related to the topological transition in recently discovered Topological Crystalline Insulators. Such a protection against strong disorder, which we demonstrate to be general for three dimensional Dirac systems, has potential and valuable implications for novel technologies, as spintronics and/or spinorbitronics.

Critical transport in weakly disordered semiconductors and semimetals

Motivated by Weyl semimetals and weakly doped semiconductors, we study transport in a weakly disordered semiconductor with a power-law quasiparticle dispersion ξ_{k}∝k^{α}. We show, that in 2α dimensions short-correlated disorder experiences logarithmic renormalization from all energies in the band. We study the case of a general dimension d using a renormalization group, controlled by an ϵ=2α-d expansion. Above the critical dimensions, conduction exhibits a localization-delocalization phase transition or a sharp crossover (depending on the symmetries of the Hamiltonian) as a function of disorder strength. We utilize this analysis to compute the low-temperature conductivity in Weyl semimetals and weakly doped semiconductors near and below the critical disorder point.