Ultrafast exciton formation at the ZnO(1010) surface

Right On Time: Ultrafast Charge Separation Before Hybrid Exciton Formation

Organic/inorganic hybrid systems offer great potential for novel solar cell design combining the tunability of organic chromophore absorption properties with high charge carrier mobilities of inorganic semiconductors. However, often such material combinations do not show the expected performance: while ZnO, for example, basically exhibits all necessary properties for a successful application in light-harvesting, it was clearly outpaced by TiO2 in terms of charge separation efficiency. The origin of this deficiency has long been debated. This study employs femtosecond time-resolved photoelectron spectroscopy and many-body ab initio calculations to identify and quantify all elementary steps leading to the suppression of charge separation at an exemplary organic/ZnO interface. It is demonstrated that charge separation indeed occurs efficiently on ultrafast (350 fs) timescales, but that electrons are recaptured at the interface on a 100 ps timescale and subsequently trapped in a strongly bound (0.7 eV) hybrid exciton state with a lifetime exceeding 5 µs. Thus, initially successful charge separation is followed by delayed electron capture at the interface, leading to apparently low charge separation efficiencies. This finding provides a sufficiently large time frame for counter-measures in device design to successfully implement specifically ZnO and, moreover, invites material scientists to revisit charge separation in various kinds of previously discarded hybrid systems.

Disentangling the evolution of electrons and holes in photoexcited ZnO nanoparticles

The evolution of charge carriers in photoexcited room temperature ZnO nanoparticles in solution is investigated using ultrafast ultraviolet photoluminescence spectroscopy, ultrafast Zn K-edge absorption spectroscopy, and ab initio molecular dynamics (MD) simulations. The photoluminescence is excited at 4.66 eV, well above the band edge, and shows that electron cooling in the conduction band and exciton formation occur in <500 fs, in excellent agreement with theoretical predictions. The x-ray absorption measurements, obtained upon excitation close to the band edge at 3.49 eV, are sensitive to the migration and trapping of holes. They reveal that the 2 ps transient largely reproduces the previously reported transient obtained at 100 ps time delay in synchrotron studies. In addition, the x-ray absorption signal is found to rise in ∼1.4 ps, which we attribute to the diffusion of holes through the lattice prior to their trapping at singly charged oxygen vacancies. Indeed, the MD simulations show that impulsive trapping of holes induces an ultrafast expansion of the cage of Zn atoms in <200 fs, followed by an oscillatory response at a frequency of ∼100 cm-1, which corresponds to a phonon mode of the system involving the Zn sub-lattice.

Ultrashort and metastable doping of the ZnO surface by photoexcited defects

Shallow donors in semiconductors are known to form impurity bands that induce metallic conduction at sufficient doping densities. The perhaps most direct analogy to such doping in optically excited semiconductors...

Ultrafast generation and decay of a surface metal

Band bending at semiconductor surfaces induced by chemical doping or electric fields can create metallic surfaces with properties not found in the bulk, such as high electron mobility, magnetism or superconductivity. Optical generation of such metallic surfaces on ultrafast timescales would be appealing for high-speed electronics. Here, we demonstrate the ultrafast generation of a metal at the (10-10) surface of ZnO upon photoexcitation. Compared to hitherto known ultrafast photoinduced semiconductor-to-metal transitions that occur in the bulk of inorganic semiconductors, the metallization of the ZnO surface is launched by 3-4 orders of magnitude lower photon fluxes. Using time- and angle-resolved photoelectron spectroscopy, we show that the phase transition is caused by photoinduced downward surface band bending due to photodepletion of donor-type deep surface defects. The discovered mechanism is in analogy to chemical doping of semiconductor surfaces and presents a general route for controlling surface-confined metallicity on ultrafast timescales.

Micro-Heterogeneous Annihilation Dynamics of Self-Trapped Excitons in Hematite Single Crystals

The Auger recombination in bulk semiconductors can quickly depopulate the charge carriers in a nonradiative way, which, fortunately, only has a detrimental impact on optoelectronic device performance under the condition of high carrier density because the restriction arising from concurrent momentum and energy conservation limits the Auger rate. Here, we surprisingly observed enhanced Auger recombination in an α-Fe₂O₃ single crystal, a wide bandgap semiconductor with low carrier mobility. The Auger process was ascribed to the Coulombically coupled self-trapped excitons (STEs), and the relaxation of momentum conservation due to the strong spatial localization of these STEs should account for the enhancement. The STE-density dependent kinetics suggested that the strong polaronic effect could cause a micro-heterogeneous distribution of STEs in a high-quality bulk single crystal, which also gave rise to the micro-heterogeneous annihilation dynamics, and a stochastic recombination model was developed and successfully described the STE annihilation dynamics.

Picosecond Lifetime Hot Electrons in TiO2 Nanoparticles for High Catalytic Activity

A large number of studies have examined the origins of high-catalytic activities of nanoparticles, but very few have discussed the lifetime of high-energy electrons in nanoparticles. The lifetime is one of the factors determining electron transfer and thus catalytic activity. Much of the lifetime of electrons reported in the literature is too short for a high transfer-efficiency of photo-excited electrons from a catalyst to the attached molecules. We observed TiO2 nanoparticles using the femtosecond laser two-color pump-probe technique with photoemission electron microscopy having a 40 nm spatial resolution. A lifetime longer than 4 ps was observed together with a fast decay component of 100 fs time constant when excited by a 760 nm laser. The slow decay component was observed only when the electrons in an intermediate state pumped by the fundamental laser pulse were excited by the second harmonic pulse. The electronic structure for the asymmetry of the pump-probe signal and the origin of the two decay components are discussed based on the color center model of the oxygen vacancy.

On-Surface Chemistry Induced by Long-Lived Excitons: (NO)2 Dissociation on C60

Solid-state excitonic excitations play an increasingly important role in optoelectronic and light harvesting processes due to their ubiquitous presence in dipolar two-dimensional materials. Here we show that long-lived solid-state excitons induce chemical reactions in adsorbed molecules and thus convert light into chemical energy. For the model system (NO)₂ dimer adsorbed on ordered c(4×4) C₆₀ films, time-of-flight measurements following UV laser excitation reveal a slow and a fast dissociative desorption channel, which are assigned to intersystem crossing and internal conversion, respectively, by time-dependent density functional theory calculations.

Influence of surface defect density on the ultrafast hot carrier relaxation and transport in Cu 2 O photoelectrodes

Cuprous oxide (Cu 2 O ) is a promising material for photoelectrochemical energy conversion due to its small direct band gap, high absorbance, and its Earth-abundant constituents. High conversion efficiencies require transport of photoexcited charges to the interface without energy loss. We studied the electron dynamics inCu 2 O (111) by time-resolved two-photon photoemission for different surface defect densities in order to elucidate the influence on charge carrier transport. On the pristine bulk terminated surface, the principal conduction bands could be resolved, and ultrafast, elastic transport of electrons to the surface was observed. On a reconstructed surface the carrier transport is strongly suppressed and defect states dominate the spectra. Evidence for surface oxygen vacancies acting as efficient carrier traps is provided, what is important for further engineering ofCu 2 O based photoelectrodes.

Revealing the competing contributions of charge carriers, excitons, and defects to the non-equilibrium optical properties of ZnO

Due to its wide band gap and high carrier mobility, ZnO is, among other transparent conductive oxides, an attractive material for light-harvesting and optoelectronic applications. Its functional efficiency, however, is strongly affected by defect-related in-gap states that open up extrinsic decay channels and modify relaxation timescales. As a consequence, almost every sample behaves differently, leading to irreproducible or even contradicting observations. Here, a complementary set of time-resolved spectroscopies is applied to two ZnO samples of different defect density to disentangle the competing contributions of charge carriers, excitons, and defects to the nonequilibrium dynamics after photoexcitation: time-resolved photoluminescence, excited state transmission, and electronic sum-frequency generation. Remarkably, defects affect the transient optical properties of ZnO across more than eight orders of magnitude in time, starting with photodepletion of normally occupied defect states on femtosecond timescales, followed by the competition of free exciton emission and exciton trapping at defect sites within picoseconds, photoluminescence of defect-bound and free excitons on nanosecond timescales, and deeply trapped holes with microsecond lifetimes. These findings not only provide the first comprehensive picture of charge and exciton relaxation pathways in ZnO but also uncover the microscopic origin of previous conflicting observations in this challenging material and thereby offer means of overcoming its difficulties. Noteworthy, a similar competition of intrinsic and defect-related dynamics could likely also be utilized in other oxides with marked defect density as, for instance, TiO₂ or SrTiO₃.

Charge separation at an organic/inorganic nano-hybrid interface: atomistic simulations of a para-sexiphenyl ZnO system

A prototypical organic/inorganic interface is considered which is formed by vertical stacking of 20 para-sexiphenyl molecules physisorbed on a ZnO nano-cluster of 3903 atoms. Charge separation kinetics at the interface are investigated for their dependence on ultrafast optical excitation. In order to analyze the spatio-temporal evolution of the Frenkel exciton in the organic part and the formation of charge separated states a first principles parameterized Hamiltonian is introduced and the related time-dependent Schroedinger equation is solved. By determining the interface absorption spectrum the optically addressable states can be uncovered. The work continues our previous studies of J. Phys. Chem. Lett., 2018, 9, 209, but with a changed type of surface passivation. This prevents trapping of electrons close to the surface. Charge separated states are formed by direct optical excitation and also by exciton decay at the interface. Electron migration away from the interface into bulk regions becomes possible. The hole stays close to the interface for all excitation scenarios. Finally, it is demonstrated that energetic disorder is of minor influence.

Atomistic Simulations of Charge Separation at a Nanohybrid Interface: Relevance of Photoinduced Initial State Preparation

Charge separation kinetics at a nanohybrid interface are investigated in their dependence on ultrafast optical excitation. A prototypical organic/inorganic interface is considered. It is formed by a vertical stacking of 20 para-sexiphenyl molecules physisorbed on a ZnO nanocluster of 3783 atoms. A first principle parametrized Hamiltonian is employed, and the photoinduced subpicosecond evolution of Frenkel-excitons in the organic part is analyzed besides the formation of charge separated states across the interface. The interface absorption spectrum is calculated. Together, the data indicate that the charge separation is based on the direct excitation of the charge separated states but also on the migration of created Frenkel excitons to the interface with subsequent decay. Further, the photoinduced interface dynamics are compared with data resulting from direct set-ups of an initially excited state. Mostly such set-ups lead to substantially different charge separation processes.

IR spectroscopic investigations of chemical and photochemical reactions on metal oxides: bridging the materials gap

In this review, we highlight recent progress (2008–2016) in infrared reflection absorption spectroscopy (IRRAS) studies on oxide powders achieved by using different types of metal oxide single crystals as reference systems.

Seeing the invisible plasma with transient phonons in cuprous oxide

Light conversion leaks energy by transmitting sub-bandgap light and by plasma phonon emission. Here, phonons are upconverted to excitons using sub-bandgap light, capturing the phonon dynamics.

Spectroscopy and control of near-surface defects in conductive thin film ZnO

The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.