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Effective Landé factors for an electrostatically defined quantum point contact in silicene. Sci Rep 2021; 11:19892. [PMID: 34615912 PMCID: PMC8494940 DOI: 10.1038/s41598-021-99074-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/16/2021] [Accepted: 09/17/2021] [Indexed: 12/01/2022] Open
Abstract
The transconductance and effective Landé \documentclass[12pt]{minimal}
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\begin{document}$$g^*$$\end{document}g∗ factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin–orbit coupling in buckled silicene reduces the \documentclass[12pt]{minimal}
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\begin{document}$$g^*$$\end{document}g∗ factor for in-plane magnetic field from the nominal value 2 to around 1.2 for the first- to 0.45 for the third conduction subband. However, for perpendicular magnetic field we observe an enhancement of \documentclass[12pt]{minimal}
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\begin{document}$$g^*$$\end{document}g∗ factors for the first subband to 5.8 in nanoribbon with zigzag and to 2.5 with armchair edge. The main contribution to the Zeeman splitting comes from the intrinsic spin–orbit coupling defined by the Kane–Mele form of interaction.
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Hudson KL, Srinivasan A, Goulko O, Adam J, Wang Q, Yeoh LA, Klochan O, Farrer I, Ritchie DA, Ludwig A, Wieck AD, von Delft J, Hamilton AR. New signatures of the spin gap in quantum point contacts. Nat Commun 2021; 12:5. [PMID: 33397919 PMCID: PMC7782751 DOI: 10.1038/s41467-020-19895-3] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/14/2020] [Accepted: 10/12/2020] [Indexed: 11/09/2022] Open
Abstract
One dimensional semiconductor systems with strong spin-orbit interaction are both of fundamental interest and have potential applications to topological quantum computing. Applying a magnetic field can open a spin gap, a pre-requisite for Majorana zero modes. The spin gap is predicted to manifest as a field dependent dip on the first 1D conductance plateau. However, disorder and interaction effects make identifying spin gap signatures challenging. Here we study experimentally and numerically the 1D channel in a series of low disorder p-type GaAs quantum point contacts, where spin-orbit and hole-hole interactions are strong. We demonstrate an alternative signature for probing spin gaps, which is insensitive to disorder, based on the linear and non-linear response to the orientation of the applied magnetic field, and extract a spin-orbit gap ΔE ≈ 500 μeV. This approach could enable one-dimensional hole systems to be developed as a scalable and reproducible platform for topological quantum applications. In one-dimensional systems, the combination of a strong spin-orbit interaction and an applied magnetic field can give rise to a spin-gap, however experimental identification is difficult. Here, the authors present new signatures for the spin-gap, and verify these experimentally in hole QPCs.
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Affiliation(s)
- K L Hudson
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia.,ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, NSW, 2052, Australia
| | - A Srinivasan
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia.,ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, NSW, 2052, Australia
| | - O Goulko
- Department of Physics, University of Massachusetts, Boston, MA, 02125, USA
| | - J Adam
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Q Wang
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia.,ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, NSW, 2052, Australia
| | - L A Yeoh
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - O Klochan
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia.,ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, NSW, 2052, Australia
| | - I Farrer
- Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, UK
| | - D A Ritchie
- Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
| | - A Ludwig
- Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780, Bochum, Germany
| | - A D Wieck
- Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780, Bochum, Germany
| | - J von Delft
- Arnold Sommerfeld Center for Theoretical Physics, Ludwig-Maximilians Universität, München, Theresienstrasse 37, D-80333, München, Germany
| | - A R Hamilton
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia. .,ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, NSW, 2052, Australia.
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Conductance through a helical state in an Indium antimonide nanowire. Nat Commun 2017; 8:478. [PMID: 28883423 PMCID: PMC5589903 DOI: 10.1038/s41467-017-00315-y] [Citation(s) in RCA: 63] [Impact Index Per Article: 7.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/25/2017] [Accepted: 06/16/2017] [Indexed: 11/08/2022] Open
Abstract
The motion of an electron and its spin are generally not coupled. However in a one-dimensional material with strong spin-orbit interaction (SOI) a helical state may emerge at finite magnetic fields, where electrons of opposite spin will have opposite momentum. The existence of this helical state has applications for spin filtering and cooper pair splitter devices and is an essential ingredient for realizing topologically protected quantum computing using Majorana zero modes. Here, we report measurements of a quantum point contact in an indium antimonide nanowire. At magnetic fields exceeding 3 T, the 2 e2/h conductance plateau shows a re-entrant feature toward 1 e2/h which increases linearly in width with magnetic field. Rotating the magnetic field clearly attributes this experimental signature to SOI and by comparing our observations with a numerical model we extract a spin-orbit energy of approximately 6.5 meV, which is stronger than the spin-orbit energy obtained by other methods. Indium antimonide nanowires have large spin-orbit coupling, which can give rise to helical states that are an important part of proposals for topological quantum computing. Here the authors measure conductance through the helical states and extract a larger spin-orbit energy than obtained before.
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Srinivasan A, Miserev DS, Hudson KL, Klochan O, Muraki K, Hirayama Y, Reuter D, Wieck AD, Sushkov OP, Hamilton AR. Detection and Control of Spin-Orbit Interactions in a GaAs Hole Quantum Point Contact. PHYSICAL REVIEW LETTERS 2017; 118:146801. [PMID: 28430471 DOI: 10.1103/physrevlett.118.146801] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2016] [Indexed: 06/07/2023]
Abstract
We investigate the relationship between the Zeeman interaction and the inversion-asymmetry-induced spin-orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in the crossing and anticrossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anticrossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned. Our results constitute the independent detection and control of the Dresselhaus and Rashba SOIs in hole systems, which could be of importance for spintronics and quantum information applications.
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Affiliation(s)
- A Srinivasan
- School of Physics, University of New South Wales, Sydney New South Wales 2052, Australia
| | - D S Miserev
- School of Physics, University of New South Wales, Sydney New South Wales 2052, Australia
| | - K L Hudson
- School of Physics, University of New South Wales, Sydney New South Wales 2052, Australia
| | - O Klochan
- School of Physics, University of New South Wales, Sydney New South Wales 2052, Australia
| | - K Muraki
- NTT Basic Research Laboratories, NTT corporation, Atsugi-shi, Kanagawa 243-0198, Japan
| | - Y Hirayama
- Graduate School of Science, Tohoku University, Sendai-shi, Miyagi 980-8578, Japan
| | - D Reuter
- Fachbereich Physik, University of Paderborn, Warburger Straße 100, 33098 Paderborn, Germany
| | - A D Wieck
- Angewandte Festkorperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany
| | - O P Sushkov
- School of Physics, University of New South Wales, Sydney New South Wales 2052, Australia
| | - A R Hamilton
- School of Physics, University of New South Wales, Sydney New South Wales 2052, Australia
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Kammhuber J, Cassidy MC, Zhang H, Gül Ö, Pei F, de Moor MWA, Nijholt B, Watanabe K, Taniguchi T, Car D, Plissard SR, Bakkers EPAM, Kouwenhoven LP. Conductance Quantization at Zero Magnetic Field in InSb Nanowires. NANO LETTERS 2016; 16:3482-3486. [PMID: 27121534 DOI: 10.1021/acs.nanolett.6b00051] [Citation(s) in RCA: 38] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one-dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectric environment we can consistently achieve conductance quantization at zero magnetic field. Additionally we study the contribution of orbital effects to the sub-band dispersion for different orientation of the magnetic field, observing a near-degeneracy between the second and third sub-bands.
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Affiliation(s)
- Jakob Kammhuber
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
| | - Maja C Cassidy
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
| | - Hao Zhang
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
| | - Önder Gül
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
| | - Fei Pei
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
| | - Michiel W A de Moor
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
| | - Bas Nijholt
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science , 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science , 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Diana Car
- Department of Applied Physics, Eindhoven University of Technology , 5600 MB Eindhoven, The Netherlands
| | - Sébastien R Plissard
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
- Department of Applied Physics, Eindhoven University of Technology , 5600 MB Eindhoven, The Netherlands
| | - Erik P A M Bakkers
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
- Department of Applied Physics, Eindhoven University of Technology , 5600 MB Eindhoven, The Netherlands
| | - Leo P Kouwenhoven
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
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Heedt S, Prost W, Schubert J, Grützmacher D, Schäpers T. Ballistic Transport and Exchange Interaction in InAs Nanowire Quantum Point Contacts. NANO LETTERS 2016; 16:3116-3123. [PMID: 27104768 DOI: 10.1021/acs.nanolett.6b00414] [Citation(s) in RCA: 24] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
One-dimensional ballistic transport is demonstrated for a high-mobility InAs nanowire device. Unlike conventional quantum point contacts (QPCs) created in a two-dimensional electron gas, the nanowire QPCs represent one-dimensional constrictions formed inside a quasi-one-dimensional conductor. For each QPC, the local subband occupation can be controlled individually between zero and up to six degenerate modes. At large out-of-plane magnetic fields Landau quantization and Zeeman splitting emerge and comprehensive voltage bias spectroscopy is performed. Confinement-induced quenching of the orbital motion gives rise to significantly modified subband-dependent Landé g factors. A pronounced g factor enhancement related to Coulomb exchange interaction is reported. Many-body effects of that kind also manifest in the observation of the 0.7·2e(2)/h conductance anomaly, commonly found in planar devices.
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Affiliation(s)
- S Heedt
- Peter Grünberg Institut (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich , 52425 Jülich, Germany
| | - W Prost
- Solid State Electronics Department, University of Duisburg-Essen , 47057 Duisburg, Germany
| | - J Schubert
- Peter Grünberg Institut (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich , 52425 Jülich, Germany
| | - D Grützmacher
- Peter Grünberg Institut (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich , 52425 Jülich, Germany
| | - Th Schäpers
- Peter Grünberg Institut (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich , 52425 Jülich, Germany
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