Electronic Properties of Bilayer Graphene Strongly Coupled to Interlayer Stacking and an External Electric Field

Electronic phase transition in bilayer P6mmm borophene

In this study, using the tight-binding model and Green's function technique, we investigate potential electronic phase transitions in bilayer P6mmm borophene under the influence of external stimuli, including a perpendicular electric field, electron-hole coupling between sublayers (excitonic effects), and dopants. Our focus is on key electronic properties such as the band structure and density of states. Our findings reveal that the pristine lattice is metal with Dirac cones around the Fermi level, where their intersection forms a nodal line. The system undergoes transitions to a semiconducting state - elimination of nodal line - with a perpendicular electric field and a semimetallic state - transition from two Dirac cones to a single Dirac cone - with combined electric field and excitonic effects. Notably, with these, the system retains its massless Dirac-like bands characteristic at finite energy. However, introducing a dopant still leads to a metallic phase, but the Dirac-like bands become massive. Considering all these effects, the system ultimately reaches a semiconducting phase with massive Dirac-like bands. These results hold significance for optoelectronic applications.

Experimental Decoding and Tuning Electronic Friction of Si Nanotip Sliding on Graphene

Due to the coupled contributions of adhesion and carrier to friction typically found in previous research, decoupling the electron-based dissipation is a long-standing challenge in tribology. In this study, by designing and integrating a graphene/h-BN/graphene/h-BN stacking device into an atomic force microscopy, the carrier density dependent frictional behavior of a single-asperity sliding on graphene is unambiguously revealed by applying an external back-gate voltage, while maintaining the adhesion unaffected. Our experiments reveal that friction on the graphene increases monotonically with the increase of carrier density. By adjusting the back-gate voltage, the carrier density of the top graphene layer can be tuned from -3.9 × 1012 to 3.5 × 1012 cm-2, resulting in a ∼28% increase in friction. The mechanism is uncovered from the consistent dependence of the charge density redistribution and sliding barrier on the carrier density. These findings offer new perspectives on the fundamental understanding and regulation of friction at van der Waals interfaces.

Hydrogen and Halogen Bonding in Homogeneous External Electric Fields: Modulating the Bond Strengths

Recent years have witnessed various fascinating phenomena arising from the interactions of noncovalent bonds with homogeneous external electric fields (EEFs). Here we performed a computational study to interpret the sensitivity of intrinsic bond strengths to EEFs in terms of steric effect and orbital interactions. The block-localized wavefunction (BLW) method, which combines the advantages of both ab initio valence bond (VB) theory and molecular orbital (MO) theory, and the subsequent energy decomposition (BLW-ED) approach were adopted. The sensitivity was monitored and analyzed using the induced energy term, which is the variation in each energy component along the EEF strength. Systems with single or multiple hydrogen (H) or halogen (X) bond(s) were also examined. It was found that the X-bond strength change to EEFs mainly stems from the covalency change, while generally the steric effect rules the response of H-bonds to EEFs. Furthermore, X-bonds are more sensitive to EEFs, with the key difference between H- and X-bonds lying in the charge transfer interaction. Since phenylboronic acid has been experimentally used as a smart linker in EEFs, switchable sensitivity was scrutinized with the example of the phenylboronic acid dimer, which exhibits two conformations with either antiparallel or parallel H-bonds, thereby, opposite or consistent responses to EEFs. Among the studied systems, the quadruple X-bonds in molecular capsules exhibit remarkable sensitivity, with its interaction energy increased by -95.2 kJ mol^-1 at the EEF strength 0.005 a.u.

Effectively modulating vertical tunneling transport by mechanically twisting bilayer graphene within the all-metallic architecture

Bilayer graphene possesses new degrees of freedom for modulating the electronic band structure, which makes it a tempting solution for overcoming the intrinsic absence of sizeable bandgaps in graphene and designing next-generation devices for post-silicon electronics. By twisting bilayer graphene, interlayer hybridized and twist angle-dependent van Hove singularities in the electronic band structure are generated and expected to facilitate the vertical tunneling transport between bilayer graphene. Herein, based on the ab initio quantum transport simulations, we designed a novel all-metallic vertical quantum transport architecture with the twisted bilayer graphene as the transport channel region and Au electrodes as the source/drain contacts to investigate the twist angle-dependent vertical transport properties. Enhancement in the ION/IOFF ratio by 2 orders of magnitude can be achieved by simply twisting the bilayer graphene. Compared to the traditional gate voltage modulation, which tunes the Fermi energy level alone, the current strategy shifts the Fermi energy level of the channel region away from the Dirac cone, moves the Fermi level and the van Hove singularities towards each other and promotes the vertical quantum transport due to the interlayer electronic hybridization. This dual modulation strategy of this novel mechanical gating device thus provides a potential new solution for designing novel vertical transistors.

Large bandgap of pressurized trilayer graphene

Graphene-based nanodevices have been developed rapidly and are now considered a strong contender for postsilicon electronics. However, one challenge facing graphene-based transistors is opening a sizable bandgap in graphene. The largest bandgap achieved so far is several hundred meV in bilayer graphene, but this value is still far below the threshold for practical applications. Through in situ electrical measurements, we observed a semiconducting character in compressed trilayer graphene by tuning the interlayer interaction with pressure. The optical absorption measurements demonstrate that an intrinsic bandgap of 2.5 ± 0.3 eV could be achieved in such a semiconducting state, and once opened could be preserved to a few GPa. The realization of wide bandgap in compressed trilayer graphene offers opportunities in carbon-based electronic devices.

Superconductivity in bilayer graphene intercalated with alkali and alkaline earth metals

With the enormous research activity focused on graphene in recent years, it is not surprising that graphene superconductivity has become an attractive area of research. To date, no superconducting properties have been experimentally observed in the pristine form of graphene but controllable structure manipulation is a promising way to induce a superconducting state in graphene-based systems. Therefore, herein we investigate the possible superconductivity in two-layer graphene intercalated with atoms of alkali and alkaline earth metals. Results of our calculations conducted within the framework of density functional theory combined with the Eliashberg theory allow us to conclude that the Cooper pairing in these superconductors can be described in a standard phonon-mediated scenario. In this regime, C6XC6 (X = K, Ca, Rb and Sr) are expected to be superconductors with estimated superconducting critical temperatures of 5.47-14.56 K and with the ratios of energy gap to transition temperature exceeding the value predicted by the Bardeen-Cooper-Schrieffer theory.

Stacking Modes-Induced Chemical Reactivity Differences on Chemical Vapor Deposition-Grown Trilayer Graphene

Trilayer graphene (TLG) synthesized by chemical vapor deposition (CVD), in particular the twisted TLG, exhibits sophisticated electronic structures that depend on their stacking modes. Here, we computationally and experimentally demonstrate the chemical reactivity differences of CVD-TLG induced by the stacking modes and corroborated by a photoexcited phenyl-grafting reaction. The experimental results show that the ABA stacking TLGs have the most inert chemical property, yet 30°-30° stacking twisted TLGs are the most active. Further, density functional theory calculations have shown that the chemical reactivity difference can be quantitatively explained by the differences in the number of hot electrons generated in their valence band during irradiation. The activity difference is further verified by the calculated adsorption energy of phenyl on the TLGs. Our work provides insight into the chemistry of TLG and addresses the challenges associated with selective functionalization of TLG with phenyl groups. The understandings developed in this project can also guide the future development of TLG-based functional devices.

Designing Two-Dimensional Dirac Heterointerfaces of Few-Layer Graphene and Tetradymite-Type Sb2Te3 for Thermoelectric Applications

Despite the ubiquitous nature of the Peltier effect in low-dimensional thermoelectric devices, the influence of finite temperature on the electronic structure and transport in the Dirac heterointerfaces of the few-layer graphene and layered tetradymite, Sb₂Te₃ (which coincidently have excellent thermoelectric properties) are not well understood. In this work, using the first-principles density-functional theory calculations, we investigate the detailed atomic and electronic structure of these Dirac heterointerfaces of graphene and Sb₂Te₃ and further re-examine the effect of finite temperature on the electronic band structures using a phenomenological temperature-broadening model based on Fermi-Dirac statistics. We then proceed to understand the underlying charge redistribution process in this Dirac heterointerfaces and through solving the Boltzmann transport equation, we present the theoretical evidence of electron-hole asymmetry in its electrical conductivity as a consequence of this charge redistribution mechanism. We finally propose that the hexagonal-stacked Dirac heterointerfaces are useful as efficient p-n junction building blocks in the next-generation thermoelectric devices where the electron-hole asymmetry promotes the thermoelectric transport by "hot" excited charge carriers.

A theoretical study of the activation of nitromethane under applied electric fields

C–N activation is the key step of nitromethane decomposition.

Extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene

We have investigated the effect of electronic topological transition on the electric field-induced band gap in sliding bilayer graphene by using the density functional theory calculations. The electric field-induced band gap was found to be extremely sensitive to the electronic topological transition. At the electronic topological transition induced by layer sliding, four Dirac cones in the Bernal-stacked bilayer graphene reduces to two Dirac cones with equal or unequal Dirac energies depending on the sliding direction. While the critical electric field required for the band gap opening increases with increasing lateral shift for the two Dirac cones with unequal Dirac energies, the critical field is essentially zero with or without a lateral shift for the two Dirac cones with equal Dirac energies. The critical field is determined by the Dirac energy difference and the electronic screening effect. The electronic screening effect was also found to be enhanced with increasing lateral shift, apparently indicating that the massless helical and massive chiral fermions are responsible for the perfect and imperfect electronic screening, respectively.