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John V, Borsoi F, György Z, Wang CA, Széchenyi G, van Riggelen-Doelman F, Lawrie WIL, Hendrickx NW, Sammak A, Scappucci G, Pályi A, Veldhorst M. Bichromatic Rabi Control of Semiconductor Qubits. PHYSICAL REVIEW LETTERS 2024; 132:067001. [PMID: 38394602 DOI: 10.1103/physrevlett.132.067001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Accepted: 10/20/2023] [Indexed: 02/25/2024]
Abstract
Electrically driven spin resonance is a powerful technique for controlling semiconductor spin qubits. However, it faces challenges in qubit addressability and off-resonance driving in larger systems. We demonstrate coherent bichromatic Rabi control of quantum dot hole spin qubits, offering a spatially selective approach for large qubit arrays. By applying simultaneous microwave bursts to different gate electrodes, we observe multichromatic resonance lines and resonance anticrossings that are caused by the ac Stark shift. Our theoretical framework aligns with experimental data, highlighting interdot motion as the dominant mechanism for bichromatic driving.
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Affiliation(s)
- Valentin John
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Francesco Borsoi
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Zoltán György
- ELTE Eötvös Loránd University, Institute of Physics, H-1117 Budapest, Hungary
| | - Chien-An Wang
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Gábor Széchenyi
- ELTE Eötvös Loránd University, Institute of Physics, H-1117 Budapest, Hungary
| | - Floor van Riggelen-Doelman
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - William I L Lawrie
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Nico W Hendrickx
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Amir Sammak
- QuTech and Netherlands Organisation for Applied Scientific Research (TNO), Stieltjesweg 1, 2628 CK Delft, Netherlands
| | - Giordano Scappucci
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - András Pályi
- Department of Theoretical Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3, H-1111 Budapest, Hungary
- MTA-BME Quantum Dynamics and Correlations Research Group, Budapest University of Technology and Economics, Műegyetem rakpart 3, H-1111 Budapest, Hungary
| | - Menno Veldhorst
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
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2
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Bosco S, Geyer S, Camenzind LC, Eggli RS, Fuhrer A, Warburton RJ, Zumbühl DM, Egues JC, Kuhlmann AV, Loss D. Phase-Driving Hole Spin Qubits. PHYSICAL REVIEW LETTERS 2023; 131:197001. [PMID: 38000439 DOI: 10.1103/physrevlett.131.197001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2023] [Accepted: 10/03/2023] [Indexed: 11/26/2023]
Abstract
The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism mediated by the strong spin-orbit interactions in hole spin qubits, where a far-detuned oscillating field couples to the qubit phase. Phase-driving at radio frequencies, orders of magnitude slower than the microwave qubit frequency, induces highly nontrivial spin dynamics, violating the Rabi resonance condition. By using a qubit integrated in a silicon fin field-effect transistor, we demonstrate a controllable suppression of resonant Rabi oscillations and their revivals at tunable sidebands. These sidebands enable alternative qubit control schemes using global fields and local far-detuned pulses, facilitating the design of dense large-scale qubit architectures with local qubit addressability. Phase-driving also decouples Rabi oscillations from noise, an effect due to a gapped Floquet spectrum and can enable Floquet engineering high-fidelity gates in future quantum processors.
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Affiliation(s)
- Stefano Bosco
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Simon Geyer
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Leon C Camenzind
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Rafael S Eggli
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Andreas Fuhrer
- IBM Research Europe-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland
| | - Richard J Warburton
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Dominik M Zumbühl
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - J Carlos Egues
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
- Instituto de Física de São Carlos, Universidade de São Paulo, 13560-970 São Carlos, São Paulo, Brazil
| | - Andreas V Kuhlmann
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Daniel Loss
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
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3
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Lawrie WIL, Rimbach-Russ M, Riggelen FV, Hendrickx NW, Snoo SLD, Sammak A, Scappucci G, Helsen J, Veldhorst M. Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold. Nat Commun 2023; 14:3617. [PMID: 37336892 DOI: 10.1038/s41467-023-39334-3] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2021] [Accepted: 06/06/2023] [Indexed: 06/21/2023] Open
Abstract
Practical Quantum computing hinges on the ability to control large numbers of qubits with high fidelity. Quantum dots define a promising platform due to their compatibility with semiconductor manufacturing. Moreover, high-fidelity operations above 99.9% have been realized with individual qubits, though their performance has been limited to 98.67% when driving two qubits simultaneously. Here we present single-qubit randomized benchmarking in a two-dimensional array of spin qubits, finding native gate fidelities as high as 99.992(1)%. Furthermore, we benchmark single qubit gate performance while simultaneously driving two and four qubits, utilizing a novel benchmarking technique called N-copy randomized benchmarking, designed for simple experimental implementation and accurate simultaneous gate fidelity estimation. We find two- and four-copy randomized benchmarking fidelities of 99.905(8)% and 99.34(4)% respectively, and that next-nearest neighbor pairs are highly robust to cross-talk errors. These characterizations of single-qubit gate quality are crucial for scaling up quantum information technology.
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Affiliation(s)
- W I L Lawrie
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - M Rimbach-Russ
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - F van Riggelen
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - N W Hendrickx
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - S L de Snoo
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - A Sammak
- QuTech and Netherlands Organisation for Applied Scientific Research (TNO), Delft, the Netherlands
| | - G Scappucci
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - J Helsen
- QuSoft and CWI, Amsterdam, the Netherlands
| | - M Veldhorst
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands.
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4
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Crippa A, Ezzouch R, Aprá A, Amisse A, Laviéville R, Hutin L, Bertrand B, Vinet M, Urdampilleta M, Meunier T, Sanquer M, Jehl X, Maurand R, De Franceschi S. Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon. Nat Commun 2019; 10:2776. [PMID: 31270319 PMCID: PMC6610084 DOI: 10.1038/s41467-019-10848-z] [Citation(s) in RCA: 55] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/24/2018] [Accepted: 05/22/2019] [Indexed: 11/11/2022] Open
Abstract
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1 K.
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Affiliation(s)
- A Crippa
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France.
| | - R Ezzouch
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - A Aprá
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - A Amisse
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - R Laviéville
- CEA, LETI, Minatec Campus, F-38000, Grenoble, France
| | - L Hutin
- CEA, LETI, Minatec Campus, F-38000, Grenoble, France
| | - B Bertrand
- CEA, LETI, Minatec Campus, F-38000, Grenoble, France
| | - M Vinet
- CEA, LETI, Minatec Campus, F-38000, Grenoble, France
| | - M Urdampilleta
- CNRS, Grenoble INP, Institut Néel, University of Grenoble Alpes, F-38000, Grenoble, France
| | - T Meunier
- CNRS, Grenoble INP, Institut Néel, University of Grenoble Alpes, F-38000, Grenoble, France
| | - M Sanquer
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - X Jehl
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - R Maurand
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France.
| | - S De Franceschi
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
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5
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Huang Z, Zheng F, Zhang Y, Wei Y, Zhao Y. Dissipative dynamics in a tunable Rabi dimer with periodic harmonic driving. J Chem Phys 2019; 150:184116. [PMID: 31091928 DOI: 10.1063/1.5096071] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Recent progress on qubit manipulation allows application of periodic driving signals on qubits. In this study, a harmonic driving field is added to a Rabi dimer to engineer photon and qubit dynamics in a circuit quantum electrodynamics device. To model environmental effects, qubits in the Rabi dimer are coupled to a phonon bath with a sub-Ohmic spectral density. A nonperturbative treatment, the Dirac-Frenkel time-dependent variational principle together with the multiple Davydov D2 ansatz, is employed to explore the dynamical behavior of the tunable Rabi dimer. In the absence of the phonon bath, the amplitude damping of the photon number oscillation is greatly suppressed by the driving field, and photons can be created, thanks to the resonance between the periodic driving field and the photon frequency. In the presence of the phonon bath, one can still change the photon numbers in two resonators and indirectly alter the photon imbalance in the Rabi dimer by directly varying the driving signal in one qubit. It is shown that qubit states can be manipulated directly by the harmonic driving. The environment is found to strengthen the interqubit asymmetry induced by the external driving, opening up a new venue to engineer the qubit states.
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Affiliation(s)
- Zhongkai Huang
- Division of Materials Science, Nanyang Technological University, Singapore 639798, Singapore
| | - Fulu Zheng
- Division of Materials Science, Nanyang Technological University, Singapore 639798, Singapore
| | - Yuyu Zhang
- Department of Physics, Chongqing University, Chongqing 404100, China
| | - Yadong Wei
- School of Physics and Energy, Shenzhen University, Shenzhen 518060, China
| | - Yang Zhao
- Division of Materials Science, Nanyang Technological University, Singapore 639798, Singapore
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6
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Ono K, Giavaras G, Tanamoto T, Ohguro T, Hu X, Nori F. Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor. PHYSICAL REVIEW LETTERS 2017; 119:156802. [PMID: 29077473 DOI: 10.1103/physrevlett.119.156802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2017] [Indexed: 06/07/2023]
Abstract
We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the subthreshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra agree with a model of strongly coupled two-spin states in the presence of a spin-orbit-induced anticrossing. Detailed spectroscopy at the anticrossing shows a suppressed spin resonance signal due to spin-orbit-induced quantum state mixing. This suppression is also observed for multiphoton spin resonances. Our experimental observations agree with theoretical calculations.
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Affiliation(s)
- K Ono
- Advanced device laboratory, RIKEN, Wako-shi, Saitama 351-0198, Japan
| | - G Giavaras
- CEMS, RIKEN, Wako-shi, Saitama 351-0198, Japan
| | - T Tanamoto
- Corporate R&D Center, Toshiba Corporation, Kawasaki-shi, Kanagawa 212-8582, Japan
| | - T Ohguro
- Corporate R&D Center, Toshiba Corporation, Kawasaki-shi, Kanagawa 212-8582, Japan
| | - X Hu
- CEMS, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Department of Physics, University at Buffalo, SUNY, Buffalo, New York 14260-1500, USA
| | - F Nori
- CEMS, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Department of Physics, The University of Michigan, Ann Arbor, Michigan 48109-1040, USA
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7
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Zimmerman NM, Huang P, Culcer D. Valley Phase and Voltage Control of Coherent Manipulation in Si Quantum Dots. NANO LETTERS 2017; 17:4461-4465. [PMID: 28657758 DOI: 10.1021/acs.nanolett.7b01677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We demonstrate a simple analytical method to calculate the phase, and thus the exchange splitting and singlet-triplet qubit frequency, for an arbitrary interface. We then show that, with lateral control of the position of a quantum dot using a gate voltage, the valley-orbit phase can be controlled over a wide range, so that variations in the exchange splitting can be controlled for individual devices. Finally, we suggest experiments to measure the valley phase and the concomitant gate voltage control.
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Affiliation(s)
- Neil M Zimmerman
- Quantum Measurement Division, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States
| | - Peihao Huang
- Quantum Measurement Division, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States
- Joint Quantum Institute, University of Maryland and National Institute of Standards and Technology , Gaithersburg, Maryland 20742, United States
| | - Dimitrie Culcer
- School of Physics and Australian Research Council Centre of Excellence in Low-Energy Electronics Technologies, UNSW Node, The University of New South Wales , Sydney 2052, Australia
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8
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Huang W, Veldhorst M, Zimmerman NM, Dzurak AS, Culcer D. Electrically driven spin qubit based on valley mixing. PHYSICAL REVIEW. B 2017; 95:075403. [PMID: 29354794 PMCID: PMC5774647 DOI: 10.1103/physrevb.95.075403] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a heterointerface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times tπ of 170 ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.
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Affiliation(s)
- Wister Huang
- Center for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Menno Veldhorst
- Center for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales 2052, Australia
- QuTech, TU Delft, 2600 GA Delft, The Netherlands
| | - Neil M Zimmerman
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - Andrew S Dzurak
- Center for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Dimitrie Culcer
- School of Physics, The University of New South Wales, Sydney 2052, Australia
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9
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Knapp TJ, Mohr RT, Li YS, Thorgrimsson B, Foote RH, Wu X, Ward DR, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane. NANOTECHNOLOGY 2016; 27:154002. [PMID: 26938505 DOI: 10.1088/0957-4484/27/15/154002] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, mosaic tilt, and threading dislocations. The use of a SiGe nanomembrane as the virtual substrate enables the strain relaxation to be entirely elastic, eliminating the need for misfit dislocations. However, in this approach the formation of the heterostructure is more complicated, involving two separate epitaxial growth procedures separated by a wet-transfer process that results in a buried non-epitaxial interface 625 nm from the quantum dot. We demonstrate that in spite of this buried interface in close proximity to the device, a double quantum dot can be formed that is controllable enough to enable tuning of the inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of an applied magnetic field.
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Affiliation(s)
- T J Knapp
- Wisconsin Institute for Quantum Information, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706-1390, USA. Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, WI 53706-1390, USA
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