1
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Yang YB, Wang JH, Li K, Xu Y. Higher-order topological phases in crystalline and non-crystalline systems: a review. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:283002. [PMID: 38574683 DOI: 10.1088/1361-648x/ad3abd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Accepted: 04/04/2024] [Indexed: 04/06/2024]
Abstract
In recent years, higher-order topological phases have attracted great interest in various fields of physics. These phases have protected boundary states at lower-dimensional boundaries than the conventional first-order topological phases due to the higher-order bulk-boundary correspondence. In this review, we summarize current research progress on higher-order topological phases in both crystalline and non-crystalline systems. We firstly introduce prototypical models of higher-order topological phases in crystals and their topological characterizations. We then discuss effects of quenched disorder on higher-order topology and demonstrate disorder-induced higher-order topological insulators. We also review the theoretical studies on higher-order topological insulators in amorphous systems without any crystalline symmetry and higher-order topological phases in non-periodic lattices including quasicrystals, hyperbolic lattices, and fractals, which have no crystalline counterparts. We conclude the review by a summary of experimental realizations of higher-order topological phases and discussions on potential directions for future study.
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Affiliation(s)
- Yan-Bin Yang
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong Special Administrative Region of China, People's Republic of China
- Center for Quantum Information, IIIS, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jiong-Hao Wang
- Center for Quantum Information, IIIS, Tsinghua University, Beijing 100084, People's Republic of China
| | - Kai Li
- Center for Quantum Information, IIIS, Tsinghua University, Beijing 100084, People's Republic of China
| | - Yong Xu
- Center for Quantum Information, IIIS, Tsinghua University, Beijing 100084, People's Republic of China
- Hefei National Laboratory, Hefei 230088, People's Republic of China
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2
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Chen J, Zhou Y, Yan J, Liu J, Xu L, Wang J, Wan T, He Y, Zhang W, Chai Y. Room-temperature valley transistors for low-power neuromorphic computing. Nat Commun 2022; 13:7758. [PMID: 36522374 PMCID: PMC9755139 DOI: 10.1038/s41467-022-35396-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Accepted: 11/29/2022] [Indexed: 12/23/2022] Open
Abstract
Valley pseudospin is an electronic degree of freedom that promises highly efficient information processing applications. However, valley-polarized excitons usually have short pico-second lifetimes, which limits the room-temperature applicability of valleytronic devices. Here, we demonstrate room-temperature valley transistors that operate by generating free carrier valley polarization with a long lifetime. This is achieved by electrostatic manipulation of the non-trivial band topology of the Weyl semiconductor tellurium (Te). We observe valley-polarized diffusion lengths of more than 7 μm and fabricate valley transistors with an ON/OFF ratio of 105 at room temperature. Moreover, we demonstrate an ion insertion/extraction device structure that enables 32 non-volatile memory states with high linearity and symmetry in the Te valley transistor. With ultralow power consumption (~fW valley contribution), we enable the inferring process of artificial neural networks, exhibiting potential for applications in low-power neuromorphic computing.
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Affiliation(s)
- Jiewei Chen
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Yue Zhou
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Jianmin Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Jidong Liu
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, 518060, Shenzhen, China
| | - Lin Xu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Jingli Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Tianqing Wan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Yuhui He
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Wenjing Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, 518060, Shenzhen, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
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3
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Santos Pires JP, João SM, Ferreira A, Amorim B, Viana Parente Lopes JM. Anomalous Transport Signatures in Weyl Semimetals with Point Defects. PHYSICAL REVIEW LETTERS 2022; 129:196601. [PMID: 36399729 DOI: 10.1103/physrevlett.129.196601] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2022] [Accepted: 10/12/2022] [Indexed: 06/16/2023]
Abstract
We present the first theoretical study of transport properties of Weyl semimetals with point defects. Focusing on a class of time-reversal symmetric Weyl lattice models, we show that dilute lattice vacancies induce a finite density of quasilocalized states at and near the nodal energy, causing strong modifications to the low-energy spectrum. This generates novel transport effects, namely, (i) an oscillatory behavior of the dc conductivity with the charge carrier density in the absence of magnetic fields, and (ii) a plateau-shaped dissipative optical response for photon frequencies below the interband threshold, E_{F}≲ℏω≲2E_{F}. Our results provide a path to engineer unconventional quantum transport effects in Weyl semimetals by means of common point defects.
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Affiliation(s)
- J P Santos Pires
- Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre, s/n, 4169-007 Porto, Portugal
- Centro de Física das Universidades do Minho e do Porto (CF-UM-UP) and Laboratório de Física para Materiais e Tecnologias Emergentes LaPMET, University of Porto, 4169-007 Porto, Portugal
| | - S M João
- Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre, s/n, 4169-007 Porto, Portugal
- Centro de Física das Universidades do Minho e do Porto (CF-UM-UP) and Laboratório de Física para Materiais e Tecnologias Emergentes LaPMET, University of Porto, 4169-007 Porto, Portugal
- Department of Physics and York Centre for Quantum Technologies, University of York, YO10 5DD York, United Kingdom
| | - Aires Ferreira
- Department of Physics and York Centre for Quantum Technologies, University of York, YO10 5DD York, United Kingdom
| | - B Amorim
- Centro de Física das Universidades do Minho e do Porto (CF-UM-UP) and Laboratório de Física para Materiais e Tecnologias Emergentes LaPMET, Universidade do Minho, Campus de Gualtar 4710-057 Braga, Portugal
| | - J M Viana Parente Lopes
- Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre, s/n, 4169-007 Porto, Portugal
- Centro de Física das Universidades do Minho e do Porto (CF-UM-UP) and Laboratório de Física para Materiais e Tecnologias Emergentes LaPMET, University of Porto, 4169-007 Porto, Portugal
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4
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Liu GG, Gao Z, Wang Q, Xi X, Hu YH, Wang M, Liu C, Lin X, Deng L, Yang SA, Zhou P, Yang Y, Chong Y, Zhang B. Topological Chern vectors in three-dimensional photonic crystals. Nature 2022; 609:925-930. [PMID: 36171386 DOI: 10.1038/s41586-022-05077-2] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2021] [Accepted: 07/06/2022] [Indexed: 02/01/2023]
Abstract
The paradigmatic example of a topological phase of matter, the two-dimensional Chern insulator1-5, is characterized by a topological invariant consisting of a single integer, the scalar Chern number. Extending the Chern insulator phase from two to three dimensions requires generalization of the Chern number to a three-vector6,7, similar to the three-dimensional (3D) quantum Hall effect8-13. Such Chern vectors for 3D Chern insulators have never been explored experimentally. Here we use magnetically tunable 3D photonic crystals to achieve the experimental demonstration of Chern vectors and their topological surface states. We demonstrate Chern vector magnitudes of up to six, higher than all scalar Chern numbers previously realized in topological materials. The isofrequency contours formed by the topological surface states in the surface Brillouin zone form torus knots or links, whose characteristic integers are determined by the Chern vectors. We demonstrate a sample with surface states forming a (2, 2) torus link or Hopf link in the surface Brillouin zone, which is topologically distinct from the surface states of other 3D topological phases. These results establish the Chern vector as an intrinsic bulk topological invariant in 3D topological materials, with surface states possessing unique topological characteristics.
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Affiliation(s)
- Gui-Geng Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Zhen Gao
- Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Qiang Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Xiang Xi
- Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Yuan-Hang Hu
- National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, China
| | - Maoren Wang
- National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, China
| | - Chengqi Liu
- National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, China
| | - Xiao Lin
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, ZJU-Hangzhou Global Science and Technology Innovation Center, College of Information Science and Electronic Engineering, ZJU-UIUC Institute, Zhejiang University, Hangzhou, China
| | - Longjiang Deng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, China
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, Singapore
| | - Peiheng Zhou
- National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, China.
| | - Yihao Yang
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, ZJU-Hangzhou Global Science and Technology Innovation Center, College of Information Science and Electronic Engineering, ZJU-UIUC Institute, Zhejiang University, Hangzhou, China.
| | - Yidong Chong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore. .,Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological University, Singapore, Singapore.
| | - Baile Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore. .,Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological University, Singapore, Singapore.
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5
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Zhou X, Zhang RW, Yang X, Li XP, Feng W, Mokrousov Y, Yao Y. Disorder- and Topology-Enhanced Fully Spin-Polarized Currents in Nodal Chain Spin-Gapless Semimetals. PHYSICAL REVIEW LETTERS 2022; 129:097201. [PMID: 36083680 DOI: 10.1103/physrevlett.129.097201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2021] [Revised: 04/27/2022] [Accepted: 08/03/2022] [Indexed: 06/15/2023]
Abstract
Recently discovered high-quality nodal chain spin-gapless semimetals MF_{3} (M=Pd, Mn) feature an ultraclean nodal chain in the spin up channel residing right at the Fermi level and displaying a large spin gap leading to a 100% spin polarization of transport properties. Here, we investigate both intrinsic and extrinsic contributions to anomalous and spin transport in this class of materials. The dominant intrinsic origin is found to originate entirely from the gapped nodal chains without the entanglement of any other trivial bands. The side-jump mechanism is predicted to be negligibly small, but intrinsic skew scattering enhances the intrinsic Hall and Nernst signals significantly, leading to large values of respective conductivities. Our findings open a new material platform for exploring strong anomalous and spin transport properties in magnetic topological semimetals.
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Affiliation(s)
- Xiaodong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Run-Wu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Xiuxian Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Xiao-Ping Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Wanxiang Feng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yuriy Mokrousov
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
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6
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Chen R, Liu T, Wang CM, Lu HZ, Xie XC. Field-Tunable One-Sided Higher-Order Topological Hinge States in Dirac Semimetals. PHYSICAL REVIEW LETTERS 2021; 127:066801. [PMID: 34420339 DOI: 10.1103/physrevlett.127.066801] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2021] [Accepted: 07/01/2021] [Indexed: 06/13/2023]
Abstract
Recently, higher-order topological matter and 3D quantum Hall effects have attracted a great amount of attention. The Fermi-arc mechanism of the 3D quantum Hall effect proposed to exist in Weyl semimetals is characterized by the one-sided hinge states, which do not exist in all the previous quantum Hall systems, and more importantly, pose a realistic example of the higher-order topological matter. The experimental effort so far is in the Dirac semimetal Cd_{3}As_{2}, where, however, time-reversal symmetry leads to hinge states on both sides of the top and bottom surfaces, instead of the aspired one-sided hinge states. We propose that under a tilted magnetic field, the hinge states in Cd_{3}As_{2}-like Dirac semimetals can be one sided, highly tunable by field direction and Fermi energy, and robust against weak disorder. Furthermore, we propose a scanning tunneling Hall measurement to detect the one-sided hinge states. Our results will be insightful for exploring not only the quantum Hall effects beyond two dimensions, but also other higher-order topological insulators in the future.
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Affiliation(s)
- Rui Chen
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
- School of Physics, Southeast University, Nanjing 211189, China
| | - Tianyu Liu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Max-Planck-Institut für Physik komplexer Systeme, 01187 Dresden, Germany
| | - C M Wang
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
- Department of Physics, Shanghai Normal University, Shanghai 200234, China
| | - Hai-Zhou Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
| | - X C Xie
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
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7
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Li CA, Fu B, Hu ZA, Li J, Shen SQ. Topological Phase Transitions in Disordered Electric Quadrupole Insulators. PHYSICAL REVIEW LETTERS 2020; 125:166801. [PMID: 33124864 DOI: 10.1103/physrevlett.125.166801] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2020] [Revised: 09/10/2020] [Accepted: 09/11/2020] [Indexed: 06/11/2023]
Abstract
We investigate disorder-driven topological phase transitions in quantized electric quadrupole insulators in two dimensions. We show that chiral symmetry can protect the quantization of the quadrupole moment q_{xy}, such that the higher-order topological invariant is well defined even when disorder has broken all crystalline symmetries. Moreover, nonvanishing q_{xy} and consequent corner modes can be induced from a trivial insulating phase by disorder that preserves chiral symmetry. The critical points of such topological phase transitions are marked by the occurrence of extended boundary states even in the presence of strong disorder. We provide a systematic characterization of these disorder-driven topological phase transitions from both bulk and boundary descriptions.
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Affiliation(s)
- Chang-An Li
- School of Science, Westlake University, 18 Shilongshan Road, Hangzhou 310024, Zhejiang Province, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou 310024, Zhejiang Province, China
| | - Bo Fu
- Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Zi-Ang Hu
- Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Jian Li
- School of Science, Westlake University, 18 Shilongshan Road, Hangzhou 310024, Zhejiang Province, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou 310024, Zhejiang Province, China
| | - Shun-Qing Shen
- Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
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8
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Misawa T, Nomura K. Semi-quantized Spin Pumping and Spin-Orbit Torques in Topological Dirac Semimetals. Sci Rep 2019; 9:19659. [PMID: 31873090 PMCID: PMC6927958 DOI: 10.1038/s41598-019-55802-7] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/24/2019] [Accepted: 11/25/2019] [Indexed: 12/02/2022] Open
Abstract
We study the time-development processes of spin and charge transport phenomena in a topological Dirac semimetal attached to a ferromagnetic insulator with a precessing magnetization. Compared to conventional normal metals, topological Dirac semimetals manifest a large inverse spin Hall effect when a spin current is pumped from the attached ferromagnetic insulator. It is shown that the induced charge current is semi-quantized, i.e., it depends only on the distance between the two Dirac points in momentum space and hardly depends on the disorder strength when the system remains in the topological Dirac semimetal phase. As an inverse effect, we show that the electric field applied to the topological Dirac semimetal exerts a spin torque on the local magnetization in the ferromagnetic insulator via the exchange interaction and the semi-quantized spin Hall effect. Our study demonstrates that the topological Dirac semimetal offers a less-dissipative platform for spin-charge conversion and spin switching.
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Affiliation(s)
- Takahiro Misawa
- Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan.
| | - Kentaro Nomura
- Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.,Center for Spintronics Research Network, Tohoku University, Sendai, 980-8577, Japan
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9
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Yang NX, Zhou YF, Hou Z, Sun QF. Anomalous spin Nernst effect in Weyl semimetals. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:435301. [PMID: 31239413 DOI: 10.1088/1361-648x/ab2c7d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The spin Nernst effect describes a transverse spin current induced by the longitudinal thermal gradient in a system with the spin-orbit coupling. Here we study the spin Nernst effect in a mesoscopic four-terminal cross-bar Weyl semimetal device under a perpendicular magnetic field. Because the spin current is a tensor, it has three elements with the spin direction pointing to the x, y and z directions when the spin current flows along the transverse lead. By using the tight-binding Hamiltonian combined with the nonequilibrium Green's function method, the three elements of the spin current in the transverse leads and the spin Nernst coefficients are obtained. The results show that the spin Nernst effect in the Weyl semimetal has an essential difference to the traditional Nernst effect: we found that the z direction spin current is zero without the magnetic field while it appears under the magnetic field, and the x and y direction spin currents in the two transverse leads flow out or in together, in contrast to the traditional spin Nernst effect, in which the spin current is induced by the spin-orbit coupling and flows out from one lead and flows in on the other. We call it the anomalous spin Nernst effect. In addition, we show that the Weyl semimetals have inversion-type symmetry, mirror-reversal-type symmetry and electron-hole-type symmetry, which lead to the spin Nernst coefficients being either odd or even functions of the Fermi energy, the magnetic field and the transverse terminals. Moreover, the spin Nernst effect in the Weyl semimetals are strongly anisotropic and its coefficients are strongly dependent on both the direction of thermal gradient and the direction of the transverse lead connection. Three non-equivalent connection modes (x-z, z-x and x-y modes) are studied in detail, and the spin Nernst coefficients for three different modes exhibit very different behaviors. These strongly anisotropic behaviors of the spin Nernst effect can be used as the characterization of magnetic Weyl semimetals.
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Affiliation(s)
- Ning-Xuan Yang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
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10
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Yang YB, Qin T, Deng DL, Duan LM, Xu Y. Topological Amorphous Metals. PHYSICAL REVIEW LETTERS 2019; 123:076401. [PMID: 31491126 DOI: 10.1103/physrevlett.123.076401] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2018] [Revised: 06/10/2019] [Indexed: 06/10/2023]
Abstract
We study amorphous systems with completely random sites and find that, through constructing and exploring a concrete model Hamiltonian, such a system can host an exotic phase of topological amorphous metal in three dimensions. In contrast to the traditional Weyl semimetals, topological amorphous metals break translational symmetry, and thus they cannot be characterized by the first Chern number defined based on the momentum space band structures. Instead, their topological properties will manifest in the Bott index and the Hall conductivity as well as the surface states. By studying the energy band and quantum transport properties, we find that topological amorphous metals exhibit a diffusive metal behavior. We further introduce a practical experimental proposal with electric circuits where the predicted phenomena can be observed using state-of-the-art technologies. Our results open the door to exploring topological gapless phenomena in amorphous systems.
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Affiliation(s)
- Yan-Bin Yang
- Center for Quantum Information, IIIS, Tsinghua University, Beijing 100084, People's Republic of China
| | - Tao Qin
- Department of Physics, School of Physics and Materials Science, Anhui University, Hefei, Anhui Province 230601, People's Republic of China
| | - Dong-Ling Deng
- Center for Quantum Information, IIIS, Tsinghua University, Beijing 100084, People's Republic of China
| | - L-M Duan
- Center for Quantum Information, IIIS, Tsinghua University, Beijing 100084, People's Republic of China
| | - Yong Xu
- Center for Quantum Information, IIIS, Tsinghua University, Beijing 100084, People's Republic of China
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11
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12
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Balog I, Carpentier D, Fedorenko AA. Disorder-Driven Quantum Transition in Relativistic Semimetals: Functional Renormalization via the Porous Medium Equation. PHYSICAL REVIEW LETTERS 2018; 121:166402. [PMID: 30387655 DOI: 10.1103/physrevlett.121.166402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2017] [Revised: 02/20/2018] [Indexed: 06/08/2023]
Abstract
In the presence of randomness, a relativistic semimetal undergoes a quantum transition towards a diffusive phase. A standard approach relates this transition to the U(N) Gross-Neveu model in the limit of N→0. We show that the corresponding fixed point is infinitely unstable, demonstrating the necessity to include fluctuations beyond the usual Gaussian approximation. We develop a functional renormalization group method amenable to include these effects and show that the disorder distribution renormalizes following the so-called porous medium equation. We find that the transition is controlled by a nonanalytic fixed point drastically different from that of the U(N) Gross-Neveu model. Our approach provides a unique mechanism of spontaneous generation of a finite density of states and also characterizes the scaling behavior of the broad distribution of fluctuations close to the transition. It can be applied to other problems where nonanalytic effects may play a role, such as the Anderson localization transition.
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Affiliation(s)
- Ivan Balog
- Institute of Physics, P.O. Box 304, Bijenička cesta 46, HR-10001 Zagreb, Croatia
| | - David Carpentier
- Université de Lyon, ENS de Lyon, Université Claude Bernard, CNRS, Laboratoire de Physique, F-69342 Lyon, France
| | - Andrei A Fedorenko
- Université de Lyon, ENS de Lyon, Université Claude Bernard, CNRS, Laboratoire de Physique, F-69342 Lyon, France
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13
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Shtanko O, Movassagh R. Stability of Periodically Driven Topological Phases against Disorder. PHYSICAL REVIEW LETTERS 2018; 121:126803. [PMID: 30296124 DOI: 10.1103/physrevlett.121.126803] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2018] [Indexed: 05/06/2023]
Abstract
In recent experiments, time-dependent periodic fields are used to create exotic topological phases of matter with potential applications ranging from quantum transport to quantum computing. These nonequilibrium states, at high driving frequencies, exhibit the quintessential robustness against local disorder similar to equilibrium topological phases. However, proving the existence of such topological phases in a general setting is an open problem. We propose a universal effective theory that leverages on modern free probability theory and ideas in random matrices to analytically predict the existence of the topological phase for finite driving frequencies and across a range of disorder. We find that, depending on the strength of disorder, such systems may be topological or trivial and that there is a transition between the two. In particular, the theory predicts the critical point for the transition between the two phases and provides the critical exponents. We corroborate our results by comparing them to exact diagonalizations for driven-disordered 1D Kitaev chain and 2D Bernevig-Hughes-Zhang models and find excellent agreement. This Letter may guide the experimental efforts for exploring topological phases.
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Affiliation(s)
- Oles Shtanko
- Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
| | - Ramis Movassagh
- IBM Research, MIT-IBM A.I. Lab, 75 Binney Street, Cambridge, Massachusetts 02142, USA
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Su Y, Wang XS, Wang XR. A generic phase between disordered Weyl semimetal and diffusive metal. Sci Rep 2017; 7:14382. [PMID: 29085038 PMCID: PMC5662701 DOI: 10.1038/s41598-017-14760-8] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2017] [Accepted: 10/12/2017] [Indexed: 11/09/2022] Open
Abstract
Quantum phase transitions of three-dimensional (3D) Weyl semimetals (WSMs) subject to uncorrelated on-site disorder are investigated through quantum conductance calculations and finite-size scaling of localization length. Contrary to previous claims that a direct transition from a WSM to a diffusive metal (DM) occurs, an intermediate phase of Chern insulator (CI) between the two distinct metallic phases should exist due to internode scattering that is comparable to intranode scattering. The critical exponent of localization length is ν [Formula: see text] 1.3 for both the WSM-CI and CI-DM transitions, in the same universality class of 3D Gaussian unitary ensemble of the Anderson localization transition. The CI phase is confirmed by quantized nonzero Hall conductances in the bulk insulating phase established by localization length calculations. The disorder-induced various plateau-plateau transitions in both the WSM and CI phases are observed and explained by the self-consistent Born approximation. Furthermore, we clarify that the occurrence of zero density of states at Weyl nodes is not a good criterion for the disordered WSM, and there is no fundamental principle to support the hypothesis of divergence of localization length at the WSM-DM transition.
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Affiliation(s)
- Ying Su
- Physics Department, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.,HKUST Shenzhen Research Institute, Shenzhen, 518057, China
| | - X S Wang
- Physics Department, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.,School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
| | - X R Wang
- Physics Department, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong. .,HKUST Shenzhen Research Institute, Shenzhen, 518057, China.
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Fu B, Zhu W, Shi Q, Li Q, Yang J, Zhang Z. Accurate Determination of the Quasiparticle and Scaling Properties Surrounding the Quantum Critical Point of Disordered Three-Dimensional Dirac Semimetals. PHYSICAL REVIEW LETTERS 2017; 118:146401. [PMID: 28430464 DOI: 10.1103/physrevlett.118.146401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/27/2016] [Indexed: 06/07/2023]
Abstract
Exploiting the enabling power of the Lanczos method in momentum space, we determine accurately the quasiparticle and scaling properties of disordered three-dimensional Dirac semimetals surrounding the quantum critical point separating the semimetal and diffusive metal regimes. We unveil that the imaginary part of the quasiparticle self-energy obeys a common power law before, at, and after the quantum phase transition, but the power law is nonuniversal, whose exponent is dependent on the disorder strength. More intriguingly, whereas a common power law is also found for the real part of the self-energy before and after the phase transition, a distinctly different behavior is identified at the critical point, characterized by the existence of a nonanalytic logarithmic singularity. This nonanalytical correction serves as the very basis for the unusual power-law behaviors of the quasiparticles and many other physical properties surrounding the quantum critical point. Our approach also allows the ready and reliable determination of the scaling properties of the correlation length and dynamical exponents. We further show that the central findings are valid for both uncorrelated and correlated disorder distributions and should be directly comparable with future experimental observations.
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Affiliation(s)
- Bo Fu
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Wei Zhu
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
- Center for Nonlinear Studies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
| | - Qinwei Shi
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qunxiang Li
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jinlong Yang
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhenyu Zhang
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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Owerre SA. Chiral magnetic conductivity and surface states of Weyl semimetals in topological insulator ultra-thin film multilayer. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:235501. [PMID: 27157544 DOI: 10.1088/0953-8984/28/23/235501] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We investigate an ultra-thin film of topological insulator (TI) multilayer as a model for a three-dimensional (3D) Weyl semimetal. We introduce tunneling parameters t S, [Formula: see text], and t D, where the former two parameters couple layers of the same thin film at small and large momenta, and the latter parameter couples neighbouring thin film layers along the z-direction. The Chern number is computed in each topological phase of the system and we find that for [Formula: see text], the tunneling parameter [Formula: see text] changes from positive to negative as the system transits from Weyl semi-metallic phase to insulating phases. We further study the chiral magnetic effect (CME) of the system in the presence of a time dependent magnetic field. We compute the low-temperature dependence of the chiral magnetic conductivity and show that it captures three distinct phases of the system separated by plateaus. Furthermore, we propose and study a 3D lattice model of Porphyrin thin film, an organic material known to support topological Frenkel exciton edge states. We show that this model exhibits a 3D Weyl semi-metallic phase and also supports a 2D Weyl semi-metallic phase. We further show that this model recovers that of 3D Weyl semimetal in topological insulator thin film multilayer. Thus, paving the way for simulating a 3D Weyl semimetal in topological insulator thin film multilayer. We obtain the surface states (Fermi arcs) in the 3D model and the chiral edge states in the 2D model and analyze their topological properties.
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Affiliation(s)
- S A Owerre
- African Institute for Mathematical Sciences, 6 Melrose Road, Muizenberg, Cape Town 7945, South Africa. Perimeter Institute for Theoretical Physics, 31 Caroline St. N., Waterloo, Ontario N2L 2Y5, Canada
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Liu S, Ohtsuki T, Shindou R. Effect of Disorder in a Three-Dimensional Layered Chern Insulator. PHYSICAL REVIEW LETTERS 2016; 116:066401. [PMID: 26919001 DOI: 10.1103/physrevlett.116.066401] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2015] [Indexed: 06/05/2023]
Abstract
We studied the effects of disorder in a three-dimensional layered Chern insulator, which, in the clean limit, is either a Chern insulator or a Weyl semimetal depending on an interlayer coupling strength. By calculating the localization length by the transfer matrix method, we found two distinct types of metallic phases between the Anderson insulator and the Chern insulator: one is a diffusive metallic phase and the other is a renormalized Weyl semimetal phase. By calculating the conductance and density of states, we characterize these two metallic phases and reveal a critical nature of a quantum critical line between these two metallic phases.
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Affiliation(s)
- Shang Liu
- School of Physics, Peking University, Beijing 100871, China
| | - Tomi Ohtsuki
- Department of Physics, Sophia University, Chiyoda-ku, Tokyo 102-8554, Japan
| | - Ryuichi Shindou
- International Center for Quantum Materials, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
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