Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique

A Review on Carrier Mobilities of Epitaxial Graphene on Silicon Carbide

Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that produces wafer-scale, single-orientation graphene on an insulating substrate. It is often referred to as epigraphene, and has been thought to be suitable for electronics applications. In particular, high-frequency devices for communication technology or large quantum Hall plateau for metrology applications using epigraphene are expected, which require high carrier mobility. However, the carrier mobility of as-grown epigraphene exhibit the relatively low values of about 1000 cm2/Vs. Fortunately, we can hope to improve this situation by controlling the electronic state of epigraphene by modifying the surface and interface structures. In this paper, the mobility of epigraphene and the factors that govern it will be described, followed by a discussion of attempts that have been made to improve mobility in this field. These understandings are of great importance for next-generation high-speed electronics using graphene.

Electrochemical Li+ Insertion/Extraction Reactions at LiPON/Epitaxial Graphene Interfaces

Redox reactions of the Li+ insertion/extraction from one to two interlayers of graphene (Gr) on area-defined single-crystalline SiC substrates are investigated using lithium phosphorus oxynitride glass (LiPON) as the solid-state electrolyte. Unlike an organic liquid electrolyte, this glassy electrolyte does not induce a reduction current and excludes the desolvation reaction of Li+. Gr electrodes with less than two Gr layers show a single reduction peak and one or two oxidation peaks below +0.21 V (vs Li+/Li), differing distinctly from those of graphite and multilayer Gr, which display multiple peaks (multiple stage transitions). However, this finding aligns with the conventional understanding that graphite stage structure transitions proceed with stepwise increases or decreases in the number of Gr layers between adjacent Li-inserted interlayers. Cyclic voltammetry measurements indicate the presence of surface capacity due to Li+ adsorption/desorption at the LiPON/Gr interface. Moreover, Li+ insertion and extraction induce different charge transfer resistances at the level of a single interlayer. These sensitive measurements are achieved using high-quality epitaxial Gr and LiPON electrolyte, which prevent the formation of a solid electrolyte interphase and the desolvation reaction of Li+. Similar measurements using bilayer Gr produced by chemical vapor deposition coupled with a Gr transfer method and an ethylene carbonate/dimethyl carbonate liquid electrolyte are not reliable. Thus, the proposed method is effective for electrochemical measurement of Gr electrodes with a controlled number of layers.

Graphene-Based Materials for the Separator Functionalization of Lithium-Ion/Metal/Sulfur Batteries

With the escalating demand for electrochemical energy storage, commercial lithium-ion and metal battery systems have been increasingly developed. As an indispensable component of batteries, the separator plays a crucial role in determining their electrochemical performance. Conventional polymer separators have been extensively investigated over the past few decades. Nevertheless, their inadequate mechanical strength, deficient thermal stability, and constrained porosity constitute serious impediments to the development of electric vehicle power batteries and the progress of energy storage devices. Advanced graphene-based materials have emerged as an adaptable solution to these challenges, owing to their exceptional electrical conductivity, large specific surface area, and outstanding mechanical properties. Incorporating advanced graphene-based materials into the separator of lithium-ion and metal batteries has been identified as an effective strategy to overcome the aforementioned issues and enhance the specific capacity, cycle stability, and safety of batteries. This review paper provides an overview of the preparation of advanced graphene-based materials and their applications in lithium-ion, lithium-metal, and lithium-sulfur batteries. It systematically elaborates on the advantages of advanced graphene-based materials as novel separator materials and outlines future research directions in this field.

Effect of Cooling Rate on the Crystal Quality and Crystallization Rate of SiC during Rapid Solidification Based on the Solid–Liquid Model

The silicon carbide (SiC) that can achieve better electron concentration and motion control is more suitable for the production of high temperature, high frequency, radiation resistance, and high-power electronic devices. However, the fabrication of the high purity single crystal is challenging, and it is hard to observe the structural details during crystallization. Here, we demonstrate a study of the crystallization of single-crystal SiC by the molecular dynamic simulations. Based on several structure analysis methods, the transition of the solid–liquid SiC interface from a liquid to a zinc-blende structure is theoretically investigated. The results indicate that most of the atoms in the solid–liquid interface begin to crystallize with rapid solidification at low cooling rates, while crystallization does not occur in the system at high cooling rates. As the quenching progresses, the number of system defects decreases, and the distribution is more concentrated in the solid–liquid interface. A maximum crystallization rate is observed for a cooling rate of 1010 K/s. Moreover, when a stronger crystallization effect is observed, the energy is lower, and the system is more stable.

Scalable Three-Dimensional Photobioelectrodes Made of Reduced Graphene Oxide Combined with Photosystem I

Photobioelectrodes represent one of the examples where artificial materials are combined with biological entities to undertake semi-artificial photosynthesis. Here, an approach is described that uses reduced graphene oxide (rGO) as an electrode material. This classical 2D material is used to construct a three-dimensional structure by a template-based approach combined with a simple spin-coating process during preparation. Inspired by this novel material and photosystem I (PSI), a biophotovoltaic electrode is being designed and investigated. Both direct electron transfer to PSI and mediated electron transfer via cytochrome c from horse heart as redox protein can be confirmed. Electrode preparation and protein immobilization have been optimized. The performance can be upscaled by adjusting the thickness of the 3D electrode using different numbers of spin-coating steps during preparation. Thus, photocurrents up to ∼14 μA/cm² are measured for 12 spin-coated layers of rGO corresponding to a turnover frequency of 30 e^- PSI^-1 s^-1 and external quantum efficiency (EQE) of 0.07% at a thickness of about 15 μm. Operational stability has been analyzed for several days. Particularly, the performance at low illumination intensities is very promising (1.39 μA/cm² at 0.1 mW/cm² and -0.15 V vs Ag/AgCl; EQE 6.8%).

A Review of Inkjet Printed Graphene and Carbon Nanotubes Based Gas Sensors

Graphene and carbon nanotube (CNT)-based gas/vapor sensors have gained much traction for numerous applications over the last decade due to their excellent sensing performance at ambient conditions. Inkjet printing various forms of graphene (reduced graphene oxide or modified graphene) and CNT (single-wall nanotubes (SWNTs) or multiwall nanotubes (MWNTs)) nanomaterials allows fabrication onto flexible substrates which enable gas sensing applications in flexible electronics. This review focuses on their recent developments and provides an overview of the state-of-the-art in inkjet printing of graphene and CNT based sensors targeting gases, such as NO₂, Cl₂, CO₂, NH₃, and organic vapors. Moreover, this review presents the current enhancements and challenges of printing CNT and graphene-based gas/vapor sensors, the role of defects, and advanced printing techniques using these nanomaterials, while highlighting challenges in reliability and reproducibility. The future potential and outlook of this rapidly growing research are analyzed as well.

Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a B4C thin film

We show that boron-doped epitaxial graphene can be successfully grown by thermal decomposition of a boron carbide thin film, which can also be epitaxially grown on a silicon carbide substrate. The interfaces of B₄C on SiC and graphene on B₄C had a fixed orientation relation, having a local stable structure with no dangling bonds. The first carbon layer on B₄C acts as a buffer layer, and the overlaying carbon layers are graphene. Graphene on B₄C was highly boron doped, and the hole concentration could be controlled over a wide range of 2 × 10¹³ to 2 × 10¹⁵ cm^-2. Highly boron-doped graphene exhibited a spin-glass behavior, which suggests the presence of local antiferromagnetic ordering in the spin-frustration system. Thermal decomposition of carbides holds the promise of being a technique to obtain a new class of wafer-scale functional epitaxial graphene for various applications.

Induced growth of quasi-free-standing graphene on SiC substrates

Free-standing graphene grown on SiC substrates is desirable for micro- and nano-electronic device applications. In this work, an induced growth method to fabricate quasi-free-standing graphene on SiC was proposed, where graphene nucleation sites were generated on the SiC substrate and active carbon sources were subsequently introduced to grow graphene centered along the established nucleation sites. The structure and morphology of the cultivated graphene were characterized by using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). Compared to the traditional epitaxial growth methods on SiC substrates, this approach shows a significant reduction of the buffer layer. This study provides an efficient method for growing quasi-free-standing graphene on SiC substrates and is believed to be able to broaden the application of graphene in electronic devices as SiC is an intrinsically outstanding wide bandgap semiconductor.

Quasi-free-standing graphene on a SiC substrate was directly prepared by using the induced graphene growth method.

Oscillatory electrostatic potential on graphene induced by group IV element decoration

The structures and electronic properties of partial C, Si and Ge decorated graphene were investigated by first-principles calculations. The calculations show that the interaction between graphene and the decoration patches is weak and the semiconductor patches act as agents for weak electron doping without much disturbing graphene electronic π-bands. Redistribution of electrons due to the partial decoration causes the electrostatic potential lower in the decorated graphene areas, thus induced an electric field across the boundary between the decorated and non-decorated domains. Such an alternating electric field can change normal stochastic adatom diffusion to biased diffusion, leading to selective mass transport.

Effect of hydrogen passivation on the decoupling of graphene on SiC(0001) substrate: First-principles calculations

Intercalation of hydrogen is important for understanding the decoupling of graphene from SiC(0001) substrate. Employing first-principles calculations, we have systematically studied the decoupling of graphene from SiC surface by H atoms intercalation from graphene boundary. It is found the passivation of H atoms on both graphene edge and SiC substrate is the key factor of the decoupling process. Passivation of graphene edge can weaken the interaction between graphene boundary and the substrate, which reduced the energy barrier significantly for H diffusion into the graphene-SiC interface. As more and more H atoms diffuse into the interface and saturate the Si dangling bonds around the boundary, graphene will detach from substrate. Furthermore, the energy barriers in these processes are relatively low, indicating that these processes can occur under the experimental temperature.