Three-Dimensional Electronic Structure of the Type-II Weyl Semimetal WTe_{2}

Polar Ohmic Contact Switching with a Ferroelectric Metal

As the dimension of electronic devices shrinks to electronic screening lengths (<10 nm), electric polarization becomes critical for device performance. Electric polarization has been widely investigated in ferroelectric devices, where nonvolatile polarization switching occurs in ferroelectric dielectrics. Recently, 2D ferroelectric conductors have been discovered, enabling the switching of direct current flow through atomically thin ferroelectric channels. However, elucidating and harnessing the role of nonvolatile polarization switching in transport through ferroelectric channels and atomic-scale interfaces remain challenging. Here, we report switchable polar ohmic contacts and channels formed with 2D ferroelectric WTe2 and their impact on nonvolatile switching operation. Beyond conventional device control through carrier density and mobility, the polar 2D channel modulates the proximity effect with metal electrodes, resulting in 390 times larger switching performance than solely gating the ferroelectric channel in a two-terminal geometry. Our study highlights the potential of controlling polar ohmic contacts to overcome short-channel effects and enable multiple conductance states for neuromorphic devices.

Higher-order topological phases in crystalline and non-crystalline systems: a review

In recent years, higher-order topological phases have attracted great interest in various fields of physics. These phases have protected boundary states at lower-dimensional boundaries than the conventional first-order topological phases due to the higher-order bulk-boundary correspondence. In this review, we summarize current research progress on higher-order topological phases in both crystalline and non-crystalline systems. We firstly introduce prototypical models of higher-order topological phases in crystals and their topological characterizations. We then discuss effects of quenched disorder on higher-order topology and demonstrate disorder-induced higher-order topological insulators. We also review the theoretical studies on higher-order topological insulators in amorphous systems without any crystalline symmetry and higher-order topological phases in non-periodic lattices including quasicrystals, hyperbolic lattices, and fractals, which have no crystalline counterparts. We conclude the review by a summary of experimental realizations of higher-order topological phases and discussions on potential directions for future study.

Broken Screw Rotational Symmetry in the Near-Surface Electronic Structure of AB-Stacked Crystals

We investigate the electronic structure of 2H-NbS_{2} and h-BN by angle-resolved photoemission spectroscopy (ARPES) and photoemission intensity calculations. Although in bulk form, these materials are expected to exhibit band degeneracy in the k_{z}=π/c plane due to screw rotation and time-reversal symmetries, we observe gapped band dispersion near the surface. We extract from first-principles calculations the near-surface electronic structure probed by ARPES and find that the calculated photoemission spectra from the near-surface region reproduce the gapped ARPES spectra. Our results show that the near-surface electronic structure can be qualitatively different from the bulk electronic structure due to partially broken nonsymmorphic symmetries.

Geometry-Induced Spin Filtering in Photoemission Maps from WTe_{2} Surface States

We demonstrate that an important quantum material WTe_{2} exhibits a new type of geometry-induced spin filtering effect in photoemission, stemming from low symmetry that is responsible for its exotic transport properties. Through the laser-driven spin-polarized angle-resolved photoemission Fermi surface mapping, we showcase highly asymmetric spin textures of electrons photoemitted from the surface states of WTe_{2}. Such asymmetries are not present in the initial state spin textures, which are bound by the time-reversal and crystal lattice mirror plane symmetries. The findings are reproduced qualitatively by theoretical modeling within the one-step model photoemission formalism. The effect could be understood within the free-electron final state model as an interference due to emission from different atomic sites. The observed effect is a manifestation of time-reversal symmetry breaking of the initial state in the photoemission process, and as such it cannot be eliminated, but only its magnitude influenced, by special experimental geometries.

Patterned diamond anvils prepared via laser writing for electrical transport measurements of thin quantum materials under pressure

Quantum materials exhibit intriguing properties with important scientific values and huge technological potential. Electrical transport measurements under hydrostatic pressure have been influential in unraveling the underlying physics of many quantum materials in bulk form. However, such measurements have not been applied widely to samples in the form of thin flakes, in which new phenomena can emerge, due to the difficulty in attaching fine wires to a thin sample suitable for high-pressure devices. Here, we utilize a home-built direct laser writing system to functionalize a diamond anvil to directly integrate the capability of conducting electrical transport measurements of thin flakes with a pressure cell. With our methodology, the culet of a diamond anvil is equipped with a set of custom-designed conducting tracks. We demonstrate the superiority of these tracks as electrodes for the studies of thin flakes by presenting the measurement of pressure-enhanced superconductivity and quantum oscillations in a flake of MoTe₂.

Materials and possible mechanisms of extremely large magnetoresistance: a review

Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low external field, has always been a useful functional feature in industrial technology and a core goal pursued by physicists and materials scientists. Conventional large MR materials are mainly manganites, whose colossal MR (CMR) can be as high as -90%. The dominant mechanism is attributed to spin configuration aligned by the external field, which reduces magnetic scattering and thus resistance. In recent years, some new systems have shown an extremely large unsaturated MR (XMR). Unlike ordinary metals, the positive MR of these systems can reach 10³%-10⁸% and is persistent under super high magnetic fields. The XMR materials are mainly metals or semimetals, distributed in high-mobility topological or non-topological systems, and some are magnetic, which suggests a wide range of application scenarios. Various mechanisms have been proposed for the potential physical origin of XMR, including electron-hole compensation, steep band, ultrahigh mobility, high residual resistance ratio, topological fermions, etc. It turns out that some mechanisms play a leading role in certain systems, while more are far from clearly defined. In addition, the researches on XMR are largely overlapped or closely correlated with other recently rising physics and materials researches, such as topological matters and two-dimensional (2D) materials, which makes elucidating the mechanism of XMR even more important. Moreover, the disclosed novel properties will lay a broad and solid foundation for the design and development of functional devices. In this review, we will discuss several aspects in the following order: (I) introduction, (II) XMR materials and classification, (III) proposed mechanisms for XMR, (IV) correlation with other systems (featured), and (V) conclusions and outlook.

Manipulating Weyl quasiparticles by orbital-selective photoexcitation in WTe2

Optical control of structural and electronic properties of Weyl semimetals allows development of switchable and dissipationless topological devices at the ultrafast scale. An unexpected orbital-selective photoexcitation in type-II Weyl material WTe2 is reported under linearly polarized light (LPL), inducing striking transitions among several topologically-distinct phases mediated by effective electron-phonon couplings. The symmetry features of atomic orbitals comprising the Weyl bands result in asymmetric electronic transitions near the Weyl points, and in turn a switchable interlayer shear motion with respect to linear light polarization, when a near-infrared laser pulse is applied. Consequently, not only annihilation of Weyl quasiparticle pairs, but also increasing separation of Weyl points can be achieved, complementing existing experimental observations. In this work, we provide a new perspective on manipulating the Weyl node singularity and coherent control of electron and lattice quantum dynamics simultaneously.

A combined laser-based angle-resolved photoemission spectroscopy and two-photon photoemission spectroscopy study ofTd-WTe2

Laser-based angle-resolved photoemission spectroscopy and two-photon photoemission spectroscopy are employed to study the valence electronic structure of the Weyl semimetal candidateTd-WTe2along two high symmetry directions and for binding energies between ≈ -1 eV and 5 eV. The experimental data show a good agreement with band structure calculations. Polarization dependent measurements provide further information on initial and intermediate state symmetry properties with respect to the mirror plane of theTdstructure of WTe2.

Mode-resolved reciprocal space mapping of electron-phonon interaction in the Weyl semimetal candidate Td-WTe2

The excitation of coherent phonons provides unique capabilities to control fundamental properties of quantum materials on ultrafast time scales. Recently, it was predicted that a topologically protected Weyl semimetal phase in the transition metal dichalcogenide Td-WTe₂ can be controlled and, ultimately, be destroyed upon the coherent excitation of an interlayer shear mode. By monitoring electronic structure changes with femtosecond resolution, we provide here direct experimental evidence that the shear mode acts on the electronic states near the phase-defining Weyl points. Furthermore, we observe a periodic reduction in the spin splitting of bands, a distinct electronic signature of the Weyl phase-stabilizing non-centrosymmetric Td ground state of WTe₂. The comparison with higher-frequency coherent phonon modes finally proves the shear mode-selectivity of the observed changes in the electronic structure. Our real-time observations reveal direct experimental insights into electronic processes that are of vital importance for a coherent phonon-induced topological phase transition in Td-WTe₂.

It is predicted that topological phase transitions in quantum materials can be triggered by selective excitation of coherent phonons. Upon excitation of a shear mode, Hein et al. observe distinct perturbations of electronic Weyl semimetal fingerprints in Td-WTe₂.

Magnetoelastoresistance in WTe2: Exploring electronic structure and extremely large magnetoresistance under strain

Strain describes the deformation of a material as a result of applied stress. It has been widely employed to probe transport properties of materials, ranging from semiconductors to correlated materials. In order to understand, and eventually control, transport behavior under strain, it is important to quantify the effects of strain on the electronic bandstructure, carrier density, and mobility. Here, we demonstrate that much information can be obtained by exploring magnetoelastoresistance (MER), which refers to magnetic field-driven changes of the elastoresistance. We use this powerful approach to study the combined effect of strain and magnetic fields on the semimetallic transition metal dichalcogenide [Formula: see text] We discover that WTe₂ shows a large and temperature-nonmonotonic elastoresistance, driven by uniaxial stress, that can be tuned by magnetic field. Using first-principle and analytical low-energy model calculations, we provide a semiquantitative understanding of our experimental observations. We show that in [Formula: see text], the strain-induced change of the carrier density dominates the observed elastoresistance. In addition, the change of the mobilities can be directly accessed by using MER. Our analysis also reveals the importance of a heavy-hole band near the Fermi level on the elastoresistance at intermediate temperatures. Systematic understanding of strain effects in single crystals of correlated materials is important for future applications, such as strain tuning of bulk phases and fabrication of devices controlled by strain.

Higher-Order Topology, Monopole Nodal Lines, and the Origin of Large Fermi Arcs in Transition Metal Dichalcogenides XTe_{2} (X=Mo,W)

In recent years, transition metal dichalcogenides (TMDs) have garnered great interest as topological materials. In particular, monolayers of centrosymmetric β-phase TMDs have been identified as 2D topological insulators (TIs), and bulk crystals of noncentrosymmetric γ-phase MoTe_{2} and WTe_{2} have been identified as type-II Weyl semimetals. However, angle-resolved photoemission spectroscopy and STM probes of these semimetals have revealed huge, arclike surface states that overwhelm, and are sometimes mistaken for, the much smaller topological surface Fermi arcs of bulk type-II Weyl points. In this Letter, we calculate the bulk and surface electronic structure of both β- and γ-MoTe_{2}. We find that β-MoTe_{2} is, in fact, a Z_{4}-nontrivial higher-order TI (HOTI) driven by double band inversion and exhibits the same surface features as γ-MoTe_{2} and γ-WTe_{2}. We discover that these surface states are not topologically trivial, as previously characterized by the research that differentiated them from the Weyl Fermi arcs but, rather, are the characteristic split and gapped fourfold Dirac surface states of a HOTI. In β-MoTe_{2}, this indicates that it would exhibit helical pairs of hinge states if it were bulk insulating, and in γ-MoTe_{2} and γ-WTe_{2}, these surface states represent vestiges of HOTI phases without inversion symmetry that are nearby in parameter space. Using nested Wilson loops and first-principles calculations, we explicitly demonstrate that, when the Weyl points in γ-MoTe_{2} are annihilated, which may be accomplished by symmetry-preserving strain or lattice distortion, γ-MoTe_{2} becomes a nonsymmetry-indicated, noncentrosymmetric HOTI. We also show that, when the effects of spin-orbit coupling are neglected, β-MoTe_{2} is a nodal-line semimetal with Z_{2}-nontrivial monopole nodal lines (MNLSM). This finding confirms that MNLSMs driven by double band inversion are the weak-spin-orbit coupling limit of HOTIs, implying that MNLSMs are higher-order topological semimetals with flat-band-like hinge states, which we find to originate from the corner modes of 2D "fragile" TIs.

Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe2

Since the discovery of extremely large nonsaturating magnetoresistance (MR) in WTe₂, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large nonsaturating MR through in situ tuning of the magneto-transport properties in thin WTe₂ film. With an electrostatic doping approach, we observed a nonmonotonic gate dependence of the MR. The MR reaches a maximum (10600%) in thin WTe₂ film at certain gate voltage where electron and hole concentrations are balanced, indicating that the charge compensation is the dominant mechanism of the observed large MR. Besides, we show that the temperature-dependent magnetoresistance exhibits similar tendency with the carrier mobility when the charge compensation is retained, revealing that distinct scattering mechanisms may be at play for the temperature dependence of magneto-transport properties. Our work would be helpful for understanding mechanism of the large MR in other nonmagnetic materials and offers an avenue for achieving large MR in the nonmagnetic materials with electron-hole pockets.

Flat AgTe Honeycomb Monolayer on Ag(111)

The intriguing properties of graphene have inspired the pursuit of two-dimensional materials with honeycomb structure. Here we achieved the synthesis of a monolayer transition-metal monochalcogenide AgTe on Ag(111) by tellurization of the substrate. High-resolution scanning tunneling microscopy, combined with low-energy electron diffraction, angle-resolved photoemission spectroscopy, and density functional theory calculations, demonstrates the planar honeycomb structure of AgTe. The first-principles calculations further predict that, protected by the in-plane mirror reflection symmetry, there are two Dirac node-line fermions existing in the free-standing AgTe when spin-orbit coupling (SOC) is ignored. In fact, the SOC leads to the gap opening, resulting in the emergence of the topologically nontrivial quantum spin Hall edge state. Importantly, our experiments evidence the chemical stability of the monolayer AgTe in ambient conditions, making it possible to study AgTe by more ex situ measurements and even to utilize AgTe in future electronic devices.

Evidence of a Coulomb-Interaction-Induced Lifshitz Transition and Robust Hybrid Weyl Semimetal in T_{d}-MoTe_{2}

Using soft x-ray angle-resolved photoemission spectroscopy we probed the bulk electronic structure of T_{d}-MoTe_{2}. We found that on-site Coulomb interaction leads to a Lifshitz transition, which is essential for a precise description of the electronic structure. A hybrid Weyl semimetal state with a pair of energy bands touching at both type-I and type-II Weyl nodes is indicated by comparing the experimental data with theoretical calculations. Unveiling the importance of Coulomb interaction opens up a new route to comprehend the unique properties of MoTe_{2}, and is significant for understanding the interplay between correlation effects, strong spin-orbit coupling and superconductivity in this van der Waals material.

A Review of the Characteristics, Synthesis, and Thermodynamics of Type-II Weyl Semimetal WTe₂

WTe₂ as a candidate of transition metal dichalcogenides (TMDs) exhibits many excellent properties, such as non-saturable large magnetoresistance (MR). Firstly, the crystal structure and characteristics of WTe₂ are introduced, followed by a summary of the synthesis methods. Its thermodynamic properties are highlighted due to the insufficient research. Finally, a comprehensive analysis and discussion are introduced to interpret the advantages, challenges, and future prospects. Some results are shown as follows. (1) The chiral anomaly, pressure-induced conductivity, and non-saturable large MR are all unique properties of WTe₂ that attract wide attention, but it is also a promising thermoelectric material that holds anisotropic ultra-low thermal conductivity (0.46 W·m−1·K−1). WTe₂ is expected to have the lowest thermal conductivity, owing to the heavy atom mass and low Debye temperature. (2) The synthesis methods influence the properties significantly. Although large-scale few-layer WTe₂ in high quality can be obtained by many methods, the preparation has not yet been industrialized, which limits its applications. (3) The thermodynamic properties of WTe₂ are influenced by temperature, scale, and lattice orientations. However, the in-plane anisotropy cannot be observed in the experiment, as the intrinsic property is suppressed by defects and boundary scattering. Overall, this work provides an opportunity to develop the applications of WTe₂.

van der Waals Metallic Transition Metal Dichalcogenides

Transition metal dichalcogenides are layered materials which are composed of transition metals and chalcogens of the group VIA in a 1:2 ratio. These layered materials have been extensively investigated over synthesis and optical and electrical properties for several decades. It can be insulators, semiconductors, or metals revealing all types of condensed matter properties from a magnetic lattice distorted to superconducting characteristics. Some of these also feature the topological manner. Instead of covering the semiconducting properties of transition metal dichalcogenides, which have been extensively revisited and reviewed elsewhere, here we present the structures of metallic transition metal dichalcogenides and their synthetic approaches for not only high-quality wafer-scale samples using conventional methods (e.g., chemical vapor transport, chemical vapor deposition) but also local small areas by a modification of the materials using Li intercalation, electron beam irradiation, light illumination, pressures, and strains. Some representative band structures of metallic transition metal dichalcogenides and their strong layer-dependence are reviewed and updated, both in theoretical calculations and experiments. In addition, we discuss the physical properties of metallic transition metal dichalcogenides such as periodic lattice distortion, magnetoresistance, superconductivity, topological insulator, and Weyl semimetal. Approaches to overcome current challenges related to these materials are also proposed.

Inversion symmetry breaking induced triply degenerate points in orderly arranged PtSeTe family materials

k paths exactly with [Formula: see text] symmetry allow to find triply degenerate points (TDPs) in band structures. The paths that host the type-II Dirac points in PtSe₂ family materials also have the [Formula: see text] spatial symmetry. However, due to Kramers degeneracy (the systems have both inversion symmetry and time reversal symmetry), the crossing points in them are Dirac ones. In this work, based on symmetry analysis, first-principles calculations, and [Formula: see text] method, we predict that PtSe₂ family materials should undergo topological transitions if the inversion symmetry is broken, i.e. the Dirac fermions in PtSe₂ family materials split into TDPs in PtSeTe family materials (PtSSe, PtSeTe, and PdSeTe) with orderly arranged S/Se (Se/Te). It is different from the case in high-energy physics that breaking inversion symmetry I leads to the splitting of Dirac fermion into Weyl fermions. We also address a possible method to achieve the orderly arranged in PtSeTe family materials in experiments. Our study provides a real example that Dirac points transform into TDPs, and is helpful to investigate the topological transition between Dirac fermions and TDP fermions.

van der Waals Layered Materials: Opportunities and Challenges

Since graphene became available by a scotch tape technique, a vast class of two-dimensional (2D) van der Waals (vdW) layered materials has been researched intensively. What is more intriguing is that the well-known physics and chemistry of three-dimensional (3D) bulk materials are often irrelevant, revealing exotic phenomena in 2D vdW materials. By further constructing heterostructures of these materials in the planar and vertical directions, which can be easily achieved via simple exfoliation techniques, numerous quantum mechanical devices have been demonstrated for fundamental research and technological applications. It is, therefore, necessary to review the special features in 2D vdW materials and to discuss the remaining issues and challenges. Here, we review the vdW materials library, technology relevance, and specialties of vdW materials covering the vdW interaction, strong Coulomb interaction, layer dependence, dielectric screening engineering, work function modulation, phase engineering, heterostructures, stability, growth issues, and the remaining challenges.