Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors

Electronic and magnetic properties of charged point defects in monolayer CrI3

The two-dimensional magnetic material CrI₃ has gained considerable attention owing to its promising applications in photoelectric and spin-related devices. Recently, various structural defects in CrI₃ have been identified; however, the charge states of these defects have been mainly ignored. Here, we report on an investigation of the charged defects in monolayer CrI₃, focused on the electronic and magnetic properties of the five most stable point defects using first-principles calculations. For positively charged I vacancies and negatively charged Cr vacancies, a blue- and red-shift of defect states near the Fermi level can be observed because of the atom relaxation. Our results also indicate that, among the five defects, the Cr interstitial defect has the smallest ionization energy of 0.34 eV, which makes its ionization easiest. Furthermore, a 0.2 μ_B enhancement of the magnetic moment on the nearest Cr atom can be found for the I vacancy and Cr interstitial defect. The investigation contributes to the atomic-scale comparison and understanding of the charged defects of monolayer CrI₃.

Oxygen vacancy regulation strategy in V-Nb mixed oxides catalyst for enhanced aerobic oxidative desulfurization performance

Bimetallic oxide is a potential catalyst for oxidative desulfurization of fuel. Thus, an appropriate method is needed to improve its catalytic performance. Manufacturing defect is an effective means. In this contribution, an oxygen vacancies (OVs) regulation strategy for enhancing the catalytic activity of bimetallic oxide is proposed. Density functional theory (DFT) calculations show that the crystal phase has a huge influence on the generation energy of oxygen vacancies, so a series of V-Nb mixed oxide with different crystal phases are synthesized. Detailed characterizations show that the as-prepared tetragonal V-Nb mixed oxide (T-VNbO_x) has lower OVs formation energy and larger OVs concentration (compared to orthorhombic V-Nb mixed oxides, O-VNbO_x). Owing to the activation of OVs, the catalytic activity of T-VNbO_x was significantly enhanced to form ultra-deep oxidative desulfurization. In addition, T-VNbO_x can be cycled eight times without significantly degrading the desulfurization performance.