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Wolf S, Di Sante D, Schwemmer T, Thomale R, Rachel S. Triplet Superconductivity from Nonlocal Coulomb Repulsion in an Atomic Sn Layer Deposited onto a Si(111) Substrate. PHYSICAL REVIEW LETTERS 2022; 128:167002. [PMID: 35522509 DOI: 10.1103/physrevlett.128.167002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Accepted: 03/29/2022] [Indexed: 06/14/2023]
Abstract
Atomic layers deposited on semiconductor substrates introduce a platform for the realization of the extended electronic Hubbard model, where the consideration of electronic repulsion beyond the on-site term is paramount. Recently, the onset of superconductivity at 4.7 K has been reported in the hole-doped triangular lattice of tin atoms on a silicon substrate. Through renormalization group methods designed for weak and intermediate coupling, we investigate the nature of the superconducting instability in hole-doped Sn/Si(111). We find that the extended Hubbard nature of interactions is crucial to yield triplet pairing, which is f-wave (p-wave) for moderate (higher) hole doping. In light of persisting challenges to tailor triplet pairing in an electronic material, our finding promises to pave unprecedented ways for engineering unconventional triplet superconductivity.
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Affiliation(s)
- Sebastian Wolf
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Domenico Di Sante
- Department of Physics and Astronomy, University of Bologna, 40127 Bologna, Italy
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, USA
| | - Tilman Schwemmer
- Institut für Theoretische Physik und Astrophysik, Universität Würzburg, Am Hubland Campus Süd, Würzburg 97074, Germany
| | - Ronny Thomale
- Institut für Theoretische Physik und Astrophysik, Universität Würzburg, Am Hubland Campus Süd, Würzburg 97074, Germany
| | - Stephan Rachel
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
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Wu X, Ming F, Smith TS, Liu G, Ye F, Wang K, Johnston S, Weitering HH. Superconductivity in a Hole-Doped Mott-Insulating Triangular Adatom Layer on a Silicon Surface. PHYSICAL REVIEW LETTERS 2020; 125:117001. [PMID: 32976011 DOI: 10.1103/physrevlett.125.117001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2020] [Accepted: 08/07/2020] [Indexed: 06/11/2023]
Abstract
Adsorption of one-third monolayer of Sn on an atomically clean Si(111) substrate produces a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilute adatom reconstruction is an antiferromagnetic Mott insulator; however, the system can be modulation doped and metallized using heavily doped p-type Si(111) substrates. Here, we show that the hole-doped dilute adatom layer on a degenerately doped p-type Si(111) wafer is superconducting with a critical temperature of 4.7±0.3 K. While a phonon-mediated coupling scenario would be consistent with the observed T_{c}, Mott correlations in the Sn-derived dangling-bond surface state could suppress the s-wave pairing channel. The latter suggests that the superconductivity in this triangular adatom lattice may be unconventional.
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Affiliation(s)
- Xuefeng Wu
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Fangfei Ming
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Tyler S Smith
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Guowei Liu
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Fei Ye
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Kedong Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Steven Johnston
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Hanno H Weitering
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
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Sarte PM, Wilson SD, Attfield JP, Stock C. Magnetic fluctuations and the spin-orbit interaction in Mott insulating CoO. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:374011. [PMID: 32554874 DOI: 10.1088/1361-648x/ab8498] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2019] [Accepted: 03/30/2020] [Indexed: 06/11/2023]
Abstract
Motivated by the presence of an unquenched orbital angular momentum in CoO, a team at Chalk River, including a recently hired research officer Roger Cowley, performed the first inelastic neutron scattering experiments on the classic Mott insulator [Sakuraiet al1968Phys. Rev.167510]. Despite identifying two magnon modes at the zone boundary, the team was unable to parameterise the low energy magnetic excitation spectrum belowTNusing conventional pseudo-bosonic approaches, instead achieving only qualitative agreement. It would not be for another 40 years that Roger, now at Oxford and motivated by the discovery of the high-Tccuprate superconductors [Bednorz and Muller 1986Z. Phys. B64189], would make another attempt at the parameterisation of the magnetic excitation spectrum that had previously alluded him at the start of his career. Upon his return to CoO, Roger found a system embroiled in controversy, with some of its most fundamental parameters still remaining undetermined. Faced with such a formidable task, Roger performed a series of inelastic neutron scattering experiments in the early 2010s on both CoO and a magnetically dilute structural analogue Mg0.97Co0.03O. These experiments would prove instrumental in the determination of both single-ion [Cowleyet al2013Phys. Rev. B88205117] and cooperative magnetic parameters [Sarteet al2018Phys. Rev. B98024415] for CoO. Both these sets of parameters would eventually be used in a spin-orbit exciton model [Sarteet al2019Phys. Rev. B100075143], developed by his longtime friend and collaborator Bill Buyers, to successfully parameterise the complex spectrum that both measured at Chalk River almost 50 years prior. The story of CoO is of one that has come full circle, one filled with both spectacular failures and intermittent, yet profound, little victories.
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Affiliation(s)
- P M Sarte
- California NanoSystems Institute, University of California, Santa Barbara, California 93106-6105, United States of America
- Materials Department, University of California, Santa Barbara, California 93106-5050, United States of America
- School of Chemistry, University of Edinburgh, Edinburgh EH9 3FJ, United Kingdom
- Centre for Science at Extreme Conditions, University of Edinburgh, Edinburgh EH9 3FD, United Kingdom
| | - S D Wilson
- California NanoSystems Institute, University of California, Santa Barbara, California 93106-6105, United States of America
- Materials Department, University of California, Santa Barbara, California 93106-5050, United States of America
| | - J P Attfield
- School of Chemistry, University of Edinburgh, Edinburgh EH9 3FJ, United Kingdom
- Centre for Science at Extreme Conditions, University of Edinburgh, Edinburgh EH9 3FD, United Kingdom
| | - C Stock
- Centre for Science at Extreme Conditions, University of Edinburgh, Edinburgh EH9 3FD, United Kingdom
- School of Physics and Astronomy, University of Edinburgh, Edinburgh EH9 3FD, United Kingdom
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Smith TS, Ming F, Trabada DG, Gonzalez C, Soler-Polo D, Flores F, Ortega J, Weitering HH. Coupled Sublattice Melting and Charge-Order Transition in Two Dimensions. PHYSICAL REVIEW LETTERS 2020; 124:097602. [PMID: 32202895 DOI: 10.1103/physrevlett.124.097602] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2019] [Accepted: 01/28/2020] [Indexed: 06/10/2023]
Abstract
Two-dimensional melting is one of the most fascinating and poorly understood phase transitions in nature. Theoretical investigations often point to a two-step melting scenario involving unbinding of topological defects at two distinct temperatures. Here, we report on a novel melting transition of a charge-ordered K-Sn alloy monolayer on a silicon substrate. Melting starts with short-range positional fluctuations in the K sublattice while maintaining long-range order, followed by longer-range K diffusion over small domains, and ultimately resulting in a molten sublattice. Concomitantly, the charge order of the Sn host lattice collapses in a multistep process with both displacive and order-disorder transition characteristics. Our combined experimental and theoretical analysis provides a rare insight into the atomistic processes of a multistep melting transition of a two-dimensional materials system.
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Affiliation(s)
- T S Smith
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
| | - F Ming
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, China
| | - D G Trabada
- Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, ES-28049 Madrid, Spain
| | - C Gonzalez
- Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, ES-28049 Madrid, Spain
| | - D Soler-Polo
- Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, ES-28049 Madrid, Spain
| | - F Flores
- Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, ES-28049 Madrid, Spain
| | - J Ortega
- Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, ES-28049 Madrid, Spain
| | - H H Weitering
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
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Local electronic structure of doping defects on Tl/Si(111)1x1. Sci Rep 2019; 9:779. [PMID: 30692592 PMCID: PMC6349925 DOI: 10.1038/s41598-018-37361-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2018] [Accepted: 11/28/2018] [Indexed: 11/26/2022] Open
Abstract
The Tl/Si(111)1 × 1 surface is a representative of a 2D layer with Rashba-type spin-split electronic bands. To utilize the spin polarization, doping of the system should be understood on atomic level. We present a study of two types of atomic defects predicted to dope the considered electronic system – Si-induced vacancies and defects associated with the presence of extra Tl atoms. Structural calculations based on density functional theory (DFT) confirm the stability of the proposed defect structure consisting of an extra Si atom and missing seven Tl atoms as proposed in an earlier experimental study. The calculated spatial charge distributions indicate an enhancement of the charge around the extra Si atom, which correctly reproduces topographies of the corresponding scanning tunneling microscopy images while the calculated local densities of states of this system explain obtained scanning tunneling spectra. The DFT structural calculations let us determine the atomic structure of the defect caused by the presence of an extra Tl atom. The calculated spatial charge distributions show a ring-like feature around the extra Tl atom. The obtained results indicate a charge transfer from the central extra Tl atom to its vicinity in the agreement with earlier photoemission measurements.
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Tresca C, Brun C, Bilgeri T, Menard G, Cherkez V, Federicci R, Longo D, Debontridder F, D'angelo M, Roditchev D, Profeta G, Calandra M, Cren T. Chiral Spin Texture in the Charge-Density-Wave Phase of the Correlated Metallic Pb/Si(111) Monolayer. PHYSICAL REVIEW LETTERS 2018; 120:196402. [PMID: 29799266 DOI: 10.1103/physrevlett.120.196402] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2017] [Revised: 03/23/2018] [Indexed: 06/08/2023]
Abstract
We investigate the 1/3 monolayer α-Pb/Si(111) surface by scanning tunneling spectroscopy (STS) and fully relativistic first-principles calculations. We study both the high-temperature sqrt[3]×sqrt[3] and low-temperature 3×3 reconstructions and show that, in both phases, the spin-orbit interaction leads to an energy splitting as large as 25% of the valence-band bandwidth. Relativistic effects, electronic correlations, and Pb-substrate interaction cooperate to stabilize a correlated low-temperature paramagnetic phase with well-developed lower and upper Hubbard bands coexisting with 3×3 periodicity. By comparing the Fourier transform of STS conductance maps at the Fermi level with calculated quasiparticle interference from nonmagnetic impurities, we demonstrate the occurrence of two large hexagonal Fermi sheets with in-plane spin polarizations and opposite helicities.
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Affiliation(s)
- C Tresca
- Department of Physical and Chemical Sciences and SPIN-CNR, University of L'Aquila, Via Vetoio 10, I-67100 L'Aquila, Italy
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
| | - C Brun
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
| | - T Bilgeri
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
| | - G Menard
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
| | - V Cherkez
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
| | - R Federicci
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
| | - D Longo
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
| | - F Debontridder
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
| | - M D'angelo
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
| | - D Roditchev
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
- Laboratoire de physique et d'étude des matériaux, LPEM-UMR8213/CNRS-ESPCI ParisTech-UPMC, 10 rue Vauquelin, F-75005 Paris, France
| | - G Profeta
- Department of Physical and Chemical Sciences and SPIN-CNR, University of L'Aquila, Via Vetoio 10, I-67100 L'Aquila, Italy
| | - M Calandra
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
| | - T Cren
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
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