All-Optical Control of the Silicon-Vacancy Spin in Diamond at Millikelvin Temperatures

Strongly coupled spins of silicon-vacancy centers inside a nanodiamond with sub-megahertz linewidth

The search for long-lived quantum memories, which can be efficiently interfaced with flying qubits, is longstanding. One possible solution is to use the electron spin of a color center in diamond to mediate interaction between a long-lived nuclear spin and a photon. Realizing this in a nanodiamond furthermore facilitates the integration into photonic devices and enables the realization of hybrid quantum systems with access to quantum memories. Here, we investigated the spin environment of negatively charged silicon-vacancy centers in a nanodiamond and demonstrate strong coupling of its electron spin, while the electron spin's decoherence rate remained below 1 MHz. We furthermore demonstrate multi-spin coupling with the potential to establish registers of quantum memories in nanodiamonds.

Fiber-taper collected emission from NV centers in high-Q/V diamond microdisks

Fiber-coupled microdisks are a promising platform for enhancing the spontaneous emission from color centers in diamond. The measured cavity-enhanced emission from the microdisk is governed by the effective volume (V) of each cavity mode, the cavity quality factor (Q), and the coupling between the microdisk and the fiber. Here we observe room temperature photoluminescence from an ensemble of nitrogen-vacancy centers into high Q/V microdisk modes, which when combined with coherent spectroscopy of the microdisk modes, allows us to elucidate the relative contributions of these factors. The broad emission spectrum acts as an internal light source facilitating mode identification over several cavity free spectral ranges. Analysis of the fiber taper collected microdisk emission reveals spectral filtering both by the cavity and the fiber taper, the latter of which we find preferentially couples to higher-order microdisk modes. Coherent mode spectroscopy is used to measure Q ∼ 1 × 105 - the highest reported values for diamond microcavities operating at visible wavelengths. With realistic optimization of the microdisk dimensions, we predict that Purcell factors of ∼50 are within reach.

Germanium Vacancy in Diamond Quantum Memory Exceeding 20 ms

Negatively charged group-IV defects in diamond show great potential as quantum network nodes due to their efficient spin-photon interface. However, reaching sufficiently long coherence times remains a challenge. In this work, we demonstrate coherent control of germanium vacancy center (GeV) at millikelvin temperatures and extend its coherence time by several orders of magnitude to more than 20 ms. We model the magnetic and amplitude noise as an Ornstein-Uhlenbeck process, reproducing the experimental results well. The utilized method paves the way to optimized coherence times of group-IV defects in various experimental conditions and their successful applications in quantum technologies.

Shallow Silicon Vacancy Centers with Lifetime-Limited Optical Linewidths in Diamond Nanostructures

The negatively charged silicon vacancy center (SiV-) in diamond is a promising, yet underexplored candidate for single-spin quantum sensing at sub-kelvin temperatures and tesla-range magnetic fields. A key ingredient for such applications is the ability to perform all-optical, coherent addressing of the electronic spin of near-surface SiV- centers. We present a robust and scalable approach for creating individual, ∼50 nm deep SiV- with lifetime-limited optical linewidths in diamond nanopillars through an easy-to-realize and persistent optical charge-stabilization scheme. The latter is based on single, prolonged 445 nm laser illumination that enables continuous photoluminescence excitation spectroscopy without the need for any further charge stabilization or repumping. Our results constitute a key step toward the use of near-surface, optically coherent SiV- for sensing under extreme conditions, and offer a powerful approach for stabilizing the charge-environment of diamond color centers for quantum technology applications.

Robust multi-qubit quantum network node with integrated error detection

Long-distance quantum communication and networking require quantum memory nodes with efficient optical interfaces and long memory times. We report the realization of an integrated two-qubit network node based on silicon-vacancy centers (SiVs) in diamond nanophotonic cavities. Our qubit register consists of the SiV electron spin acting as a communication qubit and the strongly coupled silicon-29 nuclear spin acting as a memory qubit with a quantum memory time exceeding 2 seconds. By using a highly strained SiV, we realize electron-photon entangling gates at temperatures up to 1.5 kelvin and nucleus-photon entangling gates up to 4.3 kelvin. We also demonstrate efficient error detection in nuclear spin–photon gates by using the electron spin as a flag qubit, making this platform a promising candidate for scalable quantum repeaters.

Super-Poissonian Light Statistics from Individual Silicon Vacancy Centers Coupled to a Laser-Written Diamond Waveguide

Modifying light fields at the single-photon level is a key challenge for upcoming quantum technologies and can be realized in a scalable manner through integrated quantum photonics. Laser-written diamond photonics offers 3D fabrication capabilities and large mode-field diameters matched to fiber optic technology, though limiting the cooperativity at the single-emitter level. To realize large coupling efficiencies, we combine excitation of single shallow-implanted silicon vacancy centers via high numerical aperture optics with detection assisted by laser-written type-II waveguides. We demonstrate single-emitter extinction measurements with a cooperativity of 0.0050 and a relative beta factor of 13%. The transmission of resonant photons reveals single-photon subtraction from a quasi-coherent field resulting in super-Poissonian light statistics. Our architecture enables light field engineering in an integrated design on the single quantum level although the intrinsic cooperativity is low. Laser-written structures can be fabricated in three dimensions and with a natural connectivity to optical fiber arrays.

Prolonged Orbital Relaxation by Locally Modified Phonon Density of States for the SiV^{-} Center in Nanodiamonds

Coherent quantum systems are a key resource for emerging quantum technology. Solid-state spin systems are of particular importance for compact and scalable devices. However, interaction with the solid-state host degrades the coherence properties. The negatively charged silicon vacancy center in diamond is such an example. While spectral properties are outstanding, with optical coherence protected by the defects symmetry, the spin coherence is susceptible to rapid orbital relaxation limiting the spin dephasing time. A prolongation of the orbital relaxation time is therefore of utmost urgency and has been tackled by operating at very low temperatures or by introducing large strain. However, both methods have significant drawbacks: the former requires use of dilution refrigerators and the latter affects intrinsic symmetries. Here, a novel method is presented to prolong the orbital relaxation with a locally modified phonon density of states in the relevant frequency range, by restricting the diamond host to below 100 nm. Subsequently measured coherent population trapping shows an extended spin dephasing time compared to the phonon-limited time in a pure bulk diamond. The method works at liquid helium temperatures of few Kelvin and in the low-strain regime.

Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride

Optically addressable spin defects in wide-band-gap semiconductors as promising systems for quantum information and sensing applications have recently attracted increased attention. Spin defects in two-dimensional materials are expected to show superiority in quantum sensing due to their atomic thickness. Here, we demonstrate that an ensemble of negatively charged boron vacancies (VB -) with good spin properties in hexagonal boron nitride (hBN) can be generated by ion implantation. We carry out optically detected magnetic resonance measurements at room temperature to characterize the spin properties of ensembles of VB - defects, showing a zero-field splitting frequency of ∼3.47 GHz. We compare the photoluminescence intensity and spin properties of VB - defects generated using different implantation parameters, such as fluence, energy, and ion species. With the use of the proper parameters, we can successfully create VB - defects with a high probability. Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for realizing integrated hBN-based devices.

Hidden Silicon-Vacancy Centers in Diamond

We characterize a high-density sample of negatively charged silicon-vacancy (SiV^{-}) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of SiV^{-} centers that is not typically observed in photoluminescence and which exhibits significant spectral inhomogeneity and extended electronic T_{2} times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.

Recent Advances in Single Crystal Diamond Device Fabrication for Photonics, Sensing and Nanomechanics

In the last two decades, the use of diamond as a material for applications in nanophotonics, optomechanics, quantum information, and sensors tremendously increased due to its outstanding mechanical properties, wide optical transparency, and biocompatibility. This has been possible owing to advances in methods for growth of high-quality single crystal diamond (SCD), nanofabrication methods and controlled incorporation of optically active point defects (e.g., nitrogen vacancy centers) in SCD. This paper reviews the recent advances in SCD nano-structuring methods for realization of micro- and nano-structures. Novel fabrication methods are discussed and the different nano-structures realized for a wide range of applications are summarized. Moreover, the methods for color center incorporation in SCD and surface treatment methods to enhance their properties are described. Challenges in the upscaling of SCD nano-structure fabrication, their commercial applications and future prospects are discussed.

Coupling silicon vacancy centers in a thin diamond membrane to a silica optical microresonator

We report the development of a composite cavity QED system, in which silicon vacancy centers in a diamond membrane as thin as 100 nm couple to optical whispering gallery modes (WGMs) of a silica microsphere with a diameter of order 50 µm. The membrane induces a linewidth broadening of 3 MHz for equatorial and off-resonant WGMs, while the overall linewidth of the composite system remains below 40 MHz. Photoluminescence experiments in the cavity QED setting demonstrate the efficient coupling of optical emissions from silicon vacancy centers into the WGMs. Additional analysis indicates that the composite system can be used to achieve the good cavity limit in cavity QED, enabling an experimental platform for applications such as state transfer between spins and photons.

Controlled Doping of GeV and SnV Color Centers in Diamond Using Chemical Vapor Deposition

Group IV color centers in diamond (Si, Ge, Sn, and Pb) have recently emerged as promising candidates for realization of scalable quantum photonics. However, their synthesis in nanoscale diamond is still in its infancy. In this work we demonstrate controlled synthesis of selected group IV defects (Ge and Sn) into nanodiamonds and nanoscale single crystal diamond membranes by microwave plasma chemical vapor deposition. We take advantage of inorganic salts to prepare the chemical precursors that contain the required ions that are then incorporated into the growing diamond. Photoluminescence measurements confirm that the selected group IV emitters are present in the diamond without degrading its structural quality. Our results are important to expand the versatile synthesis of color centers in diamond.

Transform-Limited Photons From a Coherent Tin-Vacancy Spin in Diamond

Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, measure electron spin lifetimes, and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phonon limited with an exponential temperature scaling leading to T_{1}>10  ms, and the coherence time, T_{2}^{*} reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.

Quantum nanophotonics with group IV defects in diamond

Diamond photonics is an ever-growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field shaped by the nitrogen-vacancy (NV) centre with both breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged-group IV colour centres-namely the Si-, Ge-, Sn- and Pb-vacancies. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.

Optical Gating of Resonance Fluorescence from a Single Germanium Vacancy Color Center in Diamond

Scalable quantum photonic networks require coherent excitation of quantum emitters. However, many solid-state systems can undergo a transition to a dark shelving state that inhibits the resonance fluorescence. Here, we demonstrate that by a controlled gating using a weak nonresonant laser, the resonant fluorescence can be recovered and amplified for single germanium vacancies. Employing the gated resonance excitation, we achieve optically stable resonance fluorescence of germanium vacancy centers. Our results are pivotal for the deployment of diamond color centers as reliable building blocks for scalable solid-state quantum networks.

Coherent Control and Wave Mixing in an Ensemble of Silicon-Vacancy Centers in Diamond

Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications due to the relative ease of fabrication of components. Silicon vacancy centers (SiV^{-}) in diamond feature especially narrow inhomogeneous spectral lines, which are rare in solid materials. Here, we demonstrate resonant coherent manipulation, stimulated Raman adiabatic passage, and strong light-matter interaction via the four-wave mixing of a weak signal field in an ensemble of SiV^{-} centers.

Photon-mediated interactions between quantum emitters in a diamond nanocavity

Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode results in a coherent interaction between them, leading to spectrally resolved superradiant and subradiant states. We use the electronic spin degrees of freedom of the SiV centers to control these optically mediated interactions. Such controlled interactions will be crucial in developing cavity-mediated quantum gates between spin qubits and for realizing scalable quantum network nodes.

One-second coherence for a single electron spin coupled to a multi-qubit nuclear-spin environment

Single electron spins coupled to multiple nuclear spins provide promising multi-qubit registers for quantum sensing and quantum networks. The obtainable level of control is determined by how well the electron spin can be selectively coupled to, and decoupled from, the surrounding nuclear spins. Here we realize a coherence time exceeding a second for a single nitrogen-vacancy electron spin through decoupling sequences tailored to its microscopic nuclear-spin environment. First, we use the electron spin to probe the environment, which is accurately described by seven individual and six pairs of coupled carbon-13 spins. We develop initialization, control and readout of the carbon-13 pairs in order to directly reveal their atomic structure. We then exploit this knowledge to store quantum states in the electron spin for over a second by carefully avoiding unwanted interactions. These results provide a proof-of-principle for quantum sensing of complex multi-spin systems and an opportunity for multi-qubit quantum registers with long coherence times.

Controlling the coherence of a diamond spin qubit through its strain environment

The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. For quantum bits in the solid state, decoherence from thermal vibrations of the surrounding lattice can typically only be suppressed by lowering the temperature of operation. Here, we use a nano-electro-mechanical system to mitigate the effect of thermal phonons on a spin qubit - the silicon-vacancy colour centre in diamond - without changing the system temperature. By controlling the strain environment of the colour centre, we tune its electronic levels to probe, control, and eventually suppress the interaction of its spin with the thermal bath. Strain control provides both large tunability of the optical transitions and significantly improved spin coherence. Finally, our findings indicate the possibility to achieve strong coupling between the silicon-vacancy spin and single phonons, which can lead to the realisation of phonon-mediated quantum gates and nonlinear quantum phononics.