Observation of Weakened V-V Dimers in the Monoclinic Metallic Phase of Strained VO_{2}

Atomically Resolved Phase Coexistence in VO2 Thin Films

Concurrent structural and electronic transformations in VO2 thin films are of 2-fold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real-space atomic structure analysis in which the oxygen atomic columns are also resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. Strain analysis suggests that the presence of the M2 phase is related to local strain gradients near the TiO2/VO2 interface. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) by utilizing atomic-resolution electron microscopy. Our approach can be used to unravel the structural transitions in a wide range of correlated oxides, offering substantial implications for, e.g., optoelectronics and ferroelectrics.

MAXPEEM: a spectromicroscopy beamline at MAX IV laboratory

MAXPEEM, a dedicated photoemission electron microscopy beamline at MAX IV Laboratory, houses a state-of-the-art aberration-corrected spectroscopic photoemission and low-energy electron microscope (AC-SPELEEM). This powerful instrument offers a wide range of complementary techniques providing structural, chemical and magnetic sensitivities with a single-digit nanometre spatial resolution. The beamline can deliver a high photon flux of ≥10¹⁵ photons s^-1 (0.1% bandwidth)^-1 in the range 30-1200 eV with full control of the polarization from an elliptically polarized undulator. The microscope has several features which make it unique from similar instruments. The X-rays from the synchrotron pass through the first beam separator and impinge the surface at normal incidence. The microscope is equipped with an energy analyzer and an aberration corrector which improves both the resolution and the transmission compared with standard microscopes. A new fiber-coupled CMOS camera features an improved modulation transfer function, dynamic range and signal-to-noise ratio compared with the traditional MCP-CCD detection system.

Photonic bandgap engineering in (VO2)n/(WSe2)nphotonic superlattice for versatile near- and mid-infrared phase transition applications

The application of the photonic superlattice in advanced photonics has become a demanding field, especially for two-dimensional and strongly correlated oxides. Because it experiences an abrupt metal-insulator transition near ambient temperature, where the electrical resistivity varies by orders of magnitude, vanadium oxide (VO₂) shows potential as a building block for infrared switching and sensing devices. We reported a first principle study of superlattice structures of VO₂as a strongly correlated phase transition material and tungsten diselenide (WSe₂) as a two-dimensional transition metal dichalcogenide layer. Based on first-principles calculations, we exploit the effect of semiconductor monoclinic and metallic tetragonal state of VO₂with WSe₂in a photonic superlattices structure through the near and mid-infrared (NIR-MIR) thermochromic phase transition regions. By increasing the thickness of the VO₂layer, the photonic bandgap (PhB) gets red-shifted. We observed linear dependence of the PhB width on the VO₂thickness. For the monoclinic case of VO₂, the number of the forbidden bands increase with the number of layers of WSe₂. New forbidden gaps are preferred to appear at a slight angle of incidence, and the wider one can predominate at larger angles. We presented an efficient way to control the flow of the NIR-MIR in both summer and winter environments for phase transition and photonic thermochromic applications. This study's findings may help understand vanadium oxide's role in tunable photonic superlattice for infrared switchable devices and optical filters.

Metallic Diluted Dimerization in VO2 Tweeds

The observation of electronic phase separation textures in vanadium dioxide, a prototypical electron-correlated oxide, has recently added new perspectives on the long standing debate about its metal-insulator transition and its applications. Yet, the lack of atomically resolved information on phases accompanying such complex patterns still hinders a comprehensive understanding of the transition and its implementation in practical devices. In this work, atomic resolution imaging and spectroscopy unveils the existence of ferroelastic tweed structures on ≈5 nm length scales, well below the resolution limit of currently used spectroscopic imaging techniques. Moreover, density functional theory calculations show that this pretransitional fine-scale tweed, which on average looks and behaves like the standard metallic rutile phase, is in fact weaved by semi-dimerized chains of vanadium in a new monoclinic phase that represents a structural bridge to the monoclinic insulating ground state. These observations provide a multiscale perspective for the interpretation of existing data, whereby phase coexistence and structural intermixing can occur all the way down to the atomic scale.

Decoupling the metal insulator transition and crystal field effects of VO2

VO2 is a highly correlated electron system which has a metal-to-insulator transition (MIT) with a dramatic change of conductivity accompanied by a first-order structural phase transition (SPT) near room temperature. The origin of the MIT is still controversial and there is ongoing debate over whether an SPT induces the MIT and whether the Tc can be engineered using artificial parameters. We examined the electrical and local structural properties of Cr- and Co-ion implanted VO2 (Cr-VO2 and Co-VO2) films using temperature-dependent resistance and X-ray absorption fine structure (XAFS) measurements at the V K edge. The temperature-dependent electrical resistance measurements of both Cr-VO2 and Co-VO2 films showed sharp MIT features. The Tc values of the Cr-VO2 and Co-VO2 films first decreased and then increased relative to that of pristine VO2 as the ion flux was increased. The pre-edge peak of the V K edge from the Cr-VO2 films with a Cr ion flux ≥ 1013 ions/cm2 showed no temperature-dependent behavior, implying no changes in the local density of states of V 3d t2g and eg orbitals during MIT. Extended XAFS (EXAFS) revealed that implanted Cr and Co ions and their tracks caused a substantial amount of structural disorder and distortion at both vanadium and oxygen sites. The resistance and XAFS measurements revealed that VO2 experiences a sharp MIT when the distance of V-V pairs undergoes an SPT without any transitions in either the VO6 octahedrons or the V 3d t2g and eg states. This indicates that the MIT of VO2 occurs with no changes of the crystal fields.

A Reconfigurable Remotely Epitaxial VO2 Electrical Heterostructure

The reconfigurability of the electrical heterostructure featured with external variables, such as temperature, voltage, and strain, enabled electronic/optical phase transition in functional layers has great potential for future photonics, computing, and adaptive circuits. VO₂ has been regarded as an archetypal phase transition building block with superior metal-insulator transition characteristics. However, the reconfigurable VO₂-based heterostructure and the associated devices are rare due to the fundamental challenge in integrating high-quality VO₂ in technologically important substrates. In this report, for the first time, we show the remote epitaxy of VO₂ and the demonstration of a vertical diode device in a graphene/epitaxial VO₂/single-crystalline BN/graphite structure with VO₂ as a reconfigurable phase-change material and hexagonal boron nitride (h-BN) as an insulating layer. By diffraction and electrical transport studies, we show that the remote epitaxial VO₂ films exhibit higher structural and electrical quality than direct epitaxial ones. By high-resolution transmission electron microscopy and Cs-corrected scanning transmission electron microscopy, we show that a graphene buffered substrate leads to a less strained VO₂ film than the bare substrate. In the reconfigurable diode, we find that the Fermi level change and spectral weight shift along with the metal-insulator transition of VO₂ could modify the transport characteristics. The work suggests the feasibility of developing a single-crystalline VO₂-based reconfigurable heterostructure with arbitrary substrates and sheds light on designing novel adaptive photonics and electrical devices and circuits.