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Xu S, Dai B, Jiang Y, Xiong D, Cheng H, Tai L, Tang M, Sun Y, He Y, Yang B, Peng Y, Wang KL, Zhao W. Universal scaling law for chiral antiferromagnetism. Nat Commun 2024; 15:3717. [PMID: 38697983 PMCID: PMC11066068 DOI: 10.1038/s41467-024-46325-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2022] [Accepted: 02/22/2024] [Indexed: 05/05/2024] Open
Abstract
The chiral antiferromagnetic (AFM) materials, which have been widely investigated due to their rich physics, such as non-zero Berry phase and topology, provide a platform for the development of antiferromagnetic spintronics. Here, we find two distinctive anomalous Hall effect (AHE) contributions in the chiral AFM Mn3Pt, originating from a time-reversal symmetry breaking induced intrinsic mechanism and a skew scattering induced topological AHE due to an out-of-plane spin canting with respect to the Kagome plane. We propose a universal AHE scaling law to explain the AHE resistivity (ρ A H ) in this chiral magnet, with both a scalar spin chirality (SSC)-induced skew scattering topological AHE term,a s k and non-collinear spin-texture induced intrinsic anomalous Hall term,b i n . We found thata s k andb i n can be effectively modulated by the interfacial electron scattering, exhibiting a linear relation with the inverse film thickness. Moreover, the scaling law can explain the anomalous Hall effect in various chiral magnets and has far-reaching implications for chiral-based spintronics devices.
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Affiliation(s)
- Shijie Xu
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, 311115, Hangzhou, China
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
- Hefei Innovation Research Institute, Beihang University, Hefei, China
| | - Bingqian Dai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Yuhao Jiang
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, 311115, Hangzhou, China
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Danrong Xiong
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, 311115, Hangzhou, China
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Houyi Cheng
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, 311115, Hangzhou, China
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
- Hefei Innovation Research Institute, Beihang University, Hefei, China
| | - Lixuan Tai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Meng Tang
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Yadong Sun
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Yu He
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, 311115, Hangzhou, China
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Baolin Yang
- School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, P. R. China
| | - Yong Peng
- School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, P. R. China
| | - Kang L Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Weisheng Zhao
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, 311115, Hangzhou, China.
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
- Hefei Innovation Research Institute, Beihang University, Hefei, China.
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Spin-orbit enabled all-electrical readout of chiral spin-textures. Nat Commun 2022; 13:1576. [PMID: 35332149 PMCID: PMC8948229 DOI: 10.1038/s41467-022-29237-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2021] [Accepted: 03/01/2022] [Indexed: 11/22/2022] Open
Abstract
Chirality and topology are intimately related fundamental concepts, which are heavily explored to establish spin-textures as potential magnetic bits in information technology. However, this ambition is inhibited since the electrical reading of chiral attributes is highly non-trivial with conventional current perpendicular-to-plane (CPP) sensing devices. Here we demonstrate from extensive first-principles simulations and multiple scattering expansion the emergence of the chiral spin-mixing magnetoresistance (C-XMR) enabling highly efficient all-electrical readout of the chirality and helicity of respectively one- and two-dimensional magnetic states of matter. It is linear with spin-orbit coupling in contrast to the quadratic dependence associated with the unveiled non-local spin-mixing anisotropic MR (X-AMR). Such transport effects are systematized on various non-collinear magnetic states – spin-spirals and skyrmions – and compared to the uncovered spin-orbit-independent multi-site magnetoresistances. Owing to their simple implementation in readily available reading devices, the proposed magnetoresistances offer exciting and decisive ingredients to explore with all-electrical means the rich physics of topological and chiral magnetic objects. One challenge for encoding information in chiral spin textures is how to read the information electrically. Here, Lima Fernandes et al. show that chiral spin textures exhibit a magnetoresistance signature which could allow for efficient electric readout of the chirality and helicity.
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Bouaziz J, Ishida H, Lounis S, Blügel S. Transverse Transport in Two-Dimensional Relativistic Systems with Nontrivial Spin Textures. PHYSICAL REVIEW LETTERS 2021; 126:147203. [PMID: 33891449 DOI: 10.1103/physrevlett.126.147203] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2020] [Accepted: 03/04/2021] [Indexed: 06/12/2023]
Abstract
Using multiple scattering theory, we show that the generally accepted expression of transverse resistivity in magnetic systems that host skyrmions, given by the linear superposition of the ordinary, the anomalous, and the topological Hall effect, is incomplete and must be amended by an additional term, the "noncollinear" Hall effect (NHE). Its angular form is determined by the magnetic texture, the spin-orbit field of the electrons, and the underlying crystal structure, allowing us to disentangle the NHE from the various other Hall contributions. Its magnitude is proportional to the spin-orbit interaction strength. The NHE is an essential term required for decoding two- and three-dimensional spin textures from transport experiments.
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Affiliation(s)
- Juba Bouaziz
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich & JARA, D-52425 Jülich, Germany
| | - Hiroshi Ishida
- College of Humanities and Sciences, Nihon University, Sakura-josui, Tokyo 156-8550, Japan
| | - Samir Lounis
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich & JARA, D-52425 Jülich, Germany
- Faculty of Physics, University of Duisburg-Essen, 47053 Duisburg, Germany
| | - Stefan Blügel
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich & JARA, D-52425 Jülich, Germany
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Real-space observation of ferroelectrically induced magnetic spin crystal in SrRuO 3. Nat Commun 2021; 12:2007. [PMID: 33790268 PMCID: PMC8012650 DOI: 10.1038/s41467-021-22165-5] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/17/2020] [Accepted: 03/04/2021] [Indexed: 11/25/2022] Open
Abstract
Unusual features in the Hall Resistivity of thin film systems are frequently associated with whirling spin textures such as Skyrmions. A host of recent investigations of Hall Hysteresis loops in SrRuO3 heterostructures have provided conflicting evidence for different causes for such features. We have constructed an SrRuO3-PbTiO3 (Ferromagnetic – Ferroelectric) bilayer that exhibits features in the Hall Hysteresis previously attributed to a Topological Hall Effect, and Skyrmions. Here we show field dependent Magnetic Force Microscopy measurements throughout the key fields where the ‘THE’ presents, revealing the emergence to two periodic, chiral spin textures. The zero-field cycloidal phase, which then transforms into a ‘double-q’ incommensurate spin crystal appears over the appearance of the ‘Topological-like’ Hall effect region, and develop into a ferromagnetic switching regime as the sample reaches saturation, and the ‘Topological-like’ response diminishes. Scanning Tunnelling Electron Microscopy and Density Functional Theory is used to observe and analyse surface inversion symmetry breaking and confirm the role of an interfacial Dzyaloshinskii–Moriya interaction at the heart of the system. There is an ongoing debate in the origin of unusual bumps in the resistive Hall measurements in SrRuO3 systems. Here, the authors analyze surface inversion symmetry breaking and confirm the role of an interfacial Dzyaloshinskii–Moriya interaction at the heart of the system, revealing a magnetic spin crystal emergent across the unusual bumps.
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Fujishiro Y, Kanazawa N, Kurihara R, Ishizuka H, Hori T, Yasin FS, Yu X, Tsukazaki A, Ichikawa M, Kawasaki M, Nagaosa N, Tokunaga M, Tokura Y. Giant anomalous Hall effect from spin-chirality scattering in a chiral magnet. Nat Commun 2021; 12:317. [PMID: 33436576 PMCID: PMC7804464 DOI: 10.1038/s41467-020-20384-w] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2020] [Accepted: 11/30/2020] [Indexed: 11/08/2022] Open
Abstract
The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been intensively studied towards energy efficient electronics, those related to electron scattering have received limited attention. Here we report the observation of giant AHE of electron-scattering origin in a chiral magnet MnGe thin film. The Hall conductivity and Hall angle, respectively, reach [Formula: see text] Ω-1 cm-1 and [Formula: see text]% in the ferromagnetic region, exceeding the conventional limits of AHE of intrinsic and extrinsic origins, respectively. A possible origin of the large AHE is attributed to a new type of skew-scattering via thermally excited spin-clusters with scalar spin chirality, which is corroborated by the temperature-magnetic-field profile of the AHE being sensitive to the film-thickness or magneto-crystalline anisotropy. Our results may open up a new platform to explore giant AHE responses in various systems, including frustrated magnets and thin-film heterostructures.
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Affiliation(s)
- Yukako Fujishiro
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan.
| | - Naoya Kanazawa
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan.
| | - Ryosuke Kurihara
- The Institute for Solid State Physics (ISSP), The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan
| | - Hiroaki Ishizuka
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Tomohiro Hori
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Fehmi Sami Yasin
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, 351-0198, Japan
| | - Xiuzhen Yu
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, 351-0198, Japan
| | - Atsushi Tsukazaki
- Institute for Materials Research (IMR), Tohoku University, Aoba-ku, Sendai, 980-8577, Japan
| | - Masakazu Ichikawa
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Masashi Kawasaki
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, 351-0198, Japan
| | - Naoto Nagaosa
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, 351-0198, Japan
| | - Masashi Tokunaga
- The Institute for Solid State Physics (ISSP), The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan
| | - Yoshinori Tokura
- Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan.
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, 351-0198, Japan.
- Tokyo College, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan.
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