Current-Induced Reversal of Anomalous Hall Conductance in Twisted Bilayer Graphene

Sign-flipping intrinsic anomalous Hall conductivity with Berry curvature tunability in a half-metallic ferromagnet NbSe2-VSe2 lateral heterostructure

Single-layer half-metal magnets offer exciting scope in spin electronic quantum applications owing to improved spin transport, reduced interfacial resistance and streamlined device fabrication. Herein, we report the emergence of sign-flipping intrinsic anomalous Hall conductivity (AHC) as a result of changes in Berry curvature under an external electric field and half metallicity in a lateral heterostructure composed of centrosymmetric metallic monolayers 1T-NbSe2 and 1T-VSe2. The metallic monolayers 1T-NbSe2 and 1T-VSe2 laterally interfaced along the zigzag orientation break inversion symmetry at the interface and result in distinctive Berry curvature features. Furthermore, the half-metallic character was prominent with gapped states in the spin-up channel, while the spin-down state remained conductive; we observed the unique manifestation of sign-flipping intrinsic AHC at the Fermi level in addition to the electron- and hole-doped regions. This sign-flipping aspect of AHC at the Fermi level is of fundamental importance from the prospect of real-time device applications as it eliminates the necessity of supplementary actions, such as doping and strain engineering, which are traditionally employed to achieve AHC sign reversal. Additionally, a phase transition from half metal to metal occurs at a field of 0.5 V Å-1 and beyond. Half metallicity with sign switching AHC via external electric field makes the lateral NbSe2-VSe2 heterostructure a potential candidate for real-time energy-efficient low-power spintronic devices.

Topological Exact Flat Bands in Two-Dimensional Materials under Periodic Strain

We study flat bands and their topology in 2D materials with quadratic band crossing points under periodic strain. In contrast to Dirac points in graphene, where strain acts as a vector potential, strain for quadratic band crossing points serves as a director potential with angular momentum ℓ=2. We prove that when the strengths of the strain fields hit certain "magic" values, exact flat bands with C=±1 emerge at charge neutrality point in the chiral limit, in strong analogy to magic angle twisted-bilayer graphene. These flat bands have ideal quantum geometry for the realization of fractional Chern insulators, and they are always fragile topological. The number of flat bands can be doubled for certain point group, and the interacting Hamiltonian is exactly solvable at integer fillings. We further demonstrate the stability of these flat bands against deviations from the chiral limit, and discuss possible realization in 2D materials.

Symmetry-broken Josephson junctions and superconducting diodes in magic-angle twisted bilayer graphene

The coexistence of gate-tunable superconducting, magnetic and topological orders in magic-angle twisted bilayer graphene provides opportunities for the creation of hybrid Josephson junctions. Here we report the fabrication of gate-defined symmetry-broken Josephson junctions in magic-angle twisted bilayer graphene, where the weak link is gate-tuned close to the correlated insulator state with a moiré filling factor of υ = -2. We observe a phase-shifted and asymmetric Fraunhofer pattern with a pronounced magnetic hysteresis. Our theoretical calculations of the junction weak link-with valley polarization and orbital magnetization-explain most of these unconventional features. The effects persist up to the critical temperature of 3.5 K, with magnetic hysteresis observed below 800 mK. We show how the combination of magnetization and its current-induced magnetization switching allows us to realise a programmable zero-field superconducting diode. Our results represent a major advance towards the creation of future superconducting quantum electronic devices.

Moiré Phonons in Magic-Angle Twisted Bilayer Graphene

Magic-angle twisted bilayer graphene (TBG) has attracted significant interest recently due to the discoveries of diverse correlated and topological states. In this work, we study the phonon properties in magic-angle TBG based on many-body classical potential and interatomic forces generated by a deep neural network trained with data from ab initio calculations. We have discovered a number of soft modes which can exhibit dipolar, quadrupolar, and octupolar vibrational patterns in real space, as well as some time-reversal breaking chiral phonon modes. We have further studied the phonon effects on the electronic structures by freezing certain soft phonon modes. We find that if a soft quadrupolar phonon mode is assumed to be frozen, the system would exhibit a charge order which is perfectly consistent with recent experiments. Moreover, once some low-frequency C_2z-breaking modes get frozen, the Dirac points at the charge neutrality point would be gapped out, which provides an alternative perspective to the origin of correlated insulator state at charge neutrality point.

Current-Driven Magnetization Reversal in Orbital Chern Insulators

Graphene multilayers with flat moiré minibands can exhibit the quantized anomalous Hall effect due to the combined influence of spontaneous valley polarization and topologically nontrivial valley-projected bands. The sign of the Hall effect in these Chern insulators can be reversed either by applying an external magnetic field, or by driving a transport current through the system. We propose a current-driven mechanism whereby reversal occurs along lines in the (current I, magnetic-field B) control parameter space with slope dI/dB=(e/h)MA_{M}(1-γ^{2})/γ, where M is the magnetization, A_{M} is the moiré unit cell area, and γ<1 is the ratio of the chemical potential difference between valleys along a domain wall to the electrical bias eV.