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Wu DS, Na SH, Li YJ, Zhou XB, Wu W, Song YT, Zheng P, Li Z, Luo JL. Single-crystal growth, structure and thermal transport properties of the metallic antiferromagnet Zintl-phase β-EuIn 2As 2. Phys Chem Chem Phys 2024; 26:8695-8703. [PMID: 37947451 DOI: 10.1039/d3cp04524b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
Zintl-phase materials have attracted significant research interest owing to the interplay of magnetism and strong spin-orbit coupling, providing a prominent material platform for axion electrodynamics. Here, we report the single-crystal growth, structure, magnetic and electrical/thermal transport properties of the antiferromagnet layer Zintl-phase compound β-EuIn2As2. Importantly, the new layered structure of β-EuIn2As2, in rhombohedral (R3̄m) symmetry, contains triangular layers of Eu2+ ions. The in-plane resistivity ρ(H, T) measurements reveal metal behavior with an antiferromagnetic (AFM) transition (TN ∼ 23.5 K), which is consistent with the heat capacity Cp(H, T) and magnetic susceptibility χ(H, T) measurements. Negative MR was observed in the temperature range from 2 K to 20 K with a maximum MR ratio of 0.06. Unique 4f7J = S = 7/2 Eu2+ spins were supposed magnetically order along the c-axis. The Seebeck coefficient shows a maximum thermopower |Smax| of about 40 μV K-1. The kink around 23 K in the Seebeck coefficient originates from the effect of the antiferromagnetic phase on the electron band structure, while the pronounced thermal conductivity peak at around 10 K is attributed to the phonon-phonon Umklapp scattering. The results suggest that the Eu2+ spin arrangement plays an important role in the magnetic, electrical, and thermal transport properties in β-EuIn2As2, which might be helpful for future potential technical applications.
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Affiliation(s)
- D S Wu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - S H Na
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Y J Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - X B Zhou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - W Wu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Y T Song
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - P Zheng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Z Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - J L Luo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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Huyan S, Ryan DH, Slade TJ, Lavina B, Jose G, Wang H, Wilde JM, Ribeiro RA, Zhao J, Xie W, Bi W, Alp EE, Bud’ko SL, Canfield PC. Strong enhancement of magnetic ordering temperature and structural/valence transitions in EuPd 3S 4 under high pressure. Proc Natl Acad Sci U S A 2023; 120:e2310779120. [PMID: 38113259 PMCID: PMC10756269 DOI: 10.1073/pnas.2310779120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 11/14/2023] [Indexed: 12/21/2023] Open
Abstract
We present a comprehensive study of the inhomogeneous mixed-valence compound, EuPd3S4, by electrical transport, X-ray diffraction, time-domain 151Eu synchrotron Mössbauer spectroscopy, and X-ray absorption spectroscopy measurements under high pressure. Electrical transport measurements show that the antiferromagnetic ordering temperature, TN, increases rapidly from 2.8 K at ambient pressure to 23.5 K at ~19 GPa and plateaus between ~19 and ~29 GPa after which no anomaly associated with TN is detected. A pressure-induced first-order structural transition from cubic to tetragonal is observed, with a rather broad coexistence region (~20 GPa to ~30 GPa) that corresponds to the TN plateau. Mössbauer spectroscopy measurements show a clear valence transition from approximately 50:50 Eu2+:Eu3+ to fully Eu3+ at ~28 GPa, consistent with the vanishing of the magnetic order at the same pressure. X-ray absorption data show a transition to a fully trivalent state at a similar pressure. Our results show that pressure first greatly enhances TN, most likely via enhanced hybridization between the Eu 4f states and the conduction band, and then, second, causes a structural phase transition that coincides with the conversion of the europium to a fully trivalent state.
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Affiliation(s)
- Shuyuan Huyan
- Ames National Laboratory, US DOE, Iowa State University, Ames, IA50011
- Department of Physics and Astronomy, Iowa State University, Ames, IA50011
| | - Dominic H. Ryan
- Physics Department and Centre for the Physics of Materials, McGill University, Montreal, QCH3A 2T8, Canada
| | - Tyler J. Slade
- Ames National Laboratory, US DOE, Iowa State University, Ames, IA50011
- Department of Physics and Astronomy, Iowa State University, Ames, IA50011
| | - Barbara Lavina
- Center for Advanced Radiation Sources, The University of Chicago, Chicago, IL60637
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL60439
| | - Greeshma Jose
- Department of Physics, University of Alabama at Birmingham, Birmingham, AL35294
| | - Haozhe Wang
- Department of Chemistry, Michigan State University, East Lansing, MI48824
| | - John M. Wilde
- Ames National Laboratory, US DOE, Iowa State University, Ames, IA50011
- Department of Physics and Astronomy, Iowa State University, Ames, IA50011
| | - Raquel A. Ribeiro
- Ames National Laboratory, US DOE, Iowa State University, Ames, IA50011
- Department of Physics and Astronomy, Iowa State University, Ames, IA50011
| | - Jiyong Zhao
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL60439
| | - Weiwei Xie
- Department of Chemistry, Michigan State University, East Lansing, MI48824
| | - Wenli Bi
- Department of Physics, University of Alabama at Birmingham, Birmingham, AL35294
| | - Esen E. Alp
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL60439
| | - Sergey L. Bud’ko
- Ames National Laboratory, US DOE, Iowa State University, Ames, IA50011
- Department of Physics and Astronomy, Iowa State University, Ames, IA50011
| | - Paul C. Canfield
- Ames National Laboratory, US DOE, Iowa State University, Ames, IA50011
- Department of Physics and Astronomy, Iowa State University, Ames, IA50011
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Wang J, Ying T, Deng J, Pei C, Yu T, Chen X, Wan Y, Yang M, Dai W, Yang D, Li Y, Li S, Iimura S, Du S, Hosono H, Qi Y, Guo JG. Superconductivity in an Orbital-Reoriented SnAs Square Lattice: A Case Study of Li 0.6 Sn 2 As 2 and NaSnAs. Angew Chem Int Ed Engl 2023; 62:e202216086. [PMID: 36573848 DOI: 10.1002/anie.202216086] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Indexed: 12/28/2022]
Abstract
Searching for functional square lattices in layered superconductor systems offers an explicit clue to modify the electron behavior and find exotic properties. The trigonal SnAs3 structural units in SnAs-based systems are relatively conformable to distortion, which provides the possibility to achieve structurally topological transformation and higher superconducting transition temperatures. In the present work, the functional As square lattice was realized and activated in Li0.6 Sn2 As2 and NaSnAs through a topotactic structural transformation of trigonal SnAs3 to square SnAs4 under pressure, resulting in a record-high Tc among all synthesized SnAs-based compounds. Meanwhile, the conductive channel transfers from the out-of-plane pz orbital to the in-plane px +py orbitals, facilitating electron hopping within the square 2D lattice and boosting the superconductivity. The reorientation of p-orbital following a directed local structure transformation provides an effective strategy to modify layered superconducting systems.
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Affiliation(s)
- Junjie Wang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Tianping Ying
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jun Deng
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Cuiying Pei
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China.,Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, 201210, China
| | - Tongxu Yu
- Gusu Laboratory of Materials, Jiangsu, 215123, China.,Suzhou Laboratory, Jiangsu, 215123, China
| | - Xu Chen
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yimin Wan
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, 200438, China
| | - Mingzhang Yang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Weiyi Dai
- Gusu Laboratory of Materials, Jiangsu, 215123, China.,Suzhou Laboratory, Jiangsu, 215123, China
| | - Dongliang Yang
- Beijing Synchrotron Radiation Facility and Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanchun Li
- Beijing Synchrotron Radiation Facility and Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
| | - Shiyan Li
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, 200438, China
| | - Soshi Iimura
- National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0047, Japan.,Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama, 226-8503, Japan.,PRESTO, Japan Science and Technology Agency, Kawaguchi, 332-0012, Japan
| | - Shixuan Du
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.,Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Hideo Hosono
- National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0047, Japan.,Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
| | - Yanpeng Qi
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China.,Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, 201210, China
| | - Jian-Gang Guo
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.,Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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Zhang X, Jiang D, Han Y, Gao Y. Effects of high pressure on the lattice structure and electrical transport properties of BiOI. Phys Chem Chem Phys 2023; 25:6288-6294. [PMID: 36762578 DOI: 10.1039/d2cp05231h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/11/2023]
Abstract
To reveal the pressure effects on BiOX semiconductors, we performed in-situ Raman spectroscopy and electrical transport measurements on BiOI up to 26.1 GPa and 19.2 GPa. BiOI showed good structural stability, while the electron conduction characteristics maintained dominance throughout the pressure range. The influence of grain boundary conduction disappeared at pressures above 9.2 GPa. With pressure elevation, the pressure-induced lattice fragmentation and grain refinement introduced a large number of relevant levels in the energy gap and resulted in a significant increase in the conductivity of BiOI under compression. The conductivity increased by 106 at 19.2 GPa from the initial value and maintained an increase of 102 after depressurization until ambient conditions were attained. At the same time, the space charge polarization of the crystal interface layer became weaker with pressure elevation resulting in a decrease in the relative permittivity of BiOI. The calculation results of the complex permittivity showed that the frequency of orientation polarization response decreases with pressure elevation, and the complex permittivity becomes constant in the high-frequency region. Our work proves that pressure could significantly increase the carrier concentration and mobility, thus effectively improving the conductivity of BiOX semiconductors.
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Affiliation(s)
- Xiaotong Zhang
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China.
| | - Dawei Jiang
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China.
| | - Yonghao Han
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China.
| | - Yang Gao
- Center for High Pressure Science and Technology Advanced Research, Beijing 10094, China. .,Shanghai Institute of Laser Plasma, Shanghai 200000, China
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Zhao L, Liu H, Tong S, Wang J, Han T, Liu C, Gao C, Han Y. Application of impedance spectroscopy in exploring electrical properties of dielectric materials under high pressure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:434001. [PMID: 35973420 DOI: 10.1088/1361-648x/ac8a33] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2022] [Accepted: 08/16/2022] [Indexed: 06/15/2023]
Abstract
Impedance spectroscopy (IS) is an indispensable method of exploring electrical properties of materials. In this review, we provide an overview on the specific applications of IS measurement in the investigations of various electrical properties of materials under high pressure, including electric conduction in bulk and grain boundary, dielectric properties, ionic conduction, and electrostrictive effect. Related studies are summarized to demonstrate the method of analyzing different electrical transport processes with various designed equivalent circuits of IS and reveal some interesting phenomena of electrical properties of materials under high pressure.
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Affiliation(s)
- Lin Zhao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Hao Liu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Shuang Tong
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Jia Wang
- Institute for Interdisciplinary Biomass Functional Materials Studies, Jilin Engineering Normal University, Changchun 130052, People's Republic of China
| | - Tao Han
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Cailong Liu
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physical Science and Information Technology of Liaocheng University, Liaocheng 252059, People's Republic of China
| | - Chunxiao Gao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Yonghao Han
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China
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Guo W, Huang Z, Zhang JM. The Zintl phases compound AEIn 2As 2 (AE=Ca, Sr, Ba): topological phase transition under pressure. Phys Chem Chem Phys 2022; 24:17337-17347. [DOI: 10.1039/d2cp01764d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
AEIn2As2 (AE=Ca, Sr, Ba), as a new crucial nonmagnetic thermoelectric candidate, is desired to be understood in terms of its potential physical properties and controversial structural phases in both experimental...
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Yang G, Chai JS, Bu K, Xu LF, Wang JT. Structural, magnetic, and electronic properties of EuSi2 thin films on Si(111) surface. Phys Chem Chem Phys 2022; 24:6782-6787. [DOI: 10.1039/d1cp05913k] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Searching for magnetic silicide thin films has long been a hot topic in condensed matter physics and materials science based on its fundamental physics and promising device applications. Here we...
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