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Zhumagulov Y, Kochan D, Fabian J. Emergent Correlated Phases in Rhombohedral Trilayer Graphene Induced by Proximity Spin-Orbit and Exchange Coupling. PHYSICAL REVIEW LETTERS 2024; 132:186401. [PMID: 38759183 DOI: 10.1103/physrevlett.132.186401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2023] [Revised: 11/28/2023] [Accepted: 03/22/2024] [Indexed: 05/19/2024]
Abstract
The impact of proximity-induced spin-orbit and exchange coupling on the correlated phase diagram of rhombohedral trilayer graphene (RTG) is investigated theoretically. By employing ab initio-fitted effective models of RTG encapsulated by transition metal dichalcogenides (spin-orbit proximity effect) and ferromagnetic Cr_{2}Ge_{2}Te_{6} (exchange proximity effect), we incorporate the Coulomb interactions within the random-phase approximation to explore potential correlated phases at different displacement fields and doping. We find a rich spectrum of spin-valley resolved Stoner and intervalley coherence instabilities induced by the spin-orbit proximity effects, such as the emergence of a spin-valley-coherent phase due to the presence of valley-Zeeman coupling. Similarly, proximity exchange removes the phase degeneracies by biasing the spin direction, enabling a magnetocorrelation effect-strong sensitivity of the correlated phases to the relative magnetization orientations (parallel or antiparallel) of the encapsulating ferromagnetic layers.
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Affiliation(s)
- Yaroslav Zhumagulov
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - Denis Kochan
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
- Institute of Physics, Slovak Academy of Sciences, 84511 Bratislava, Slovakia
- Center for Quantum Frontiers of Research and Technology (QFort), National Cheng Kung University, Tainan 70101, Taiwan
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
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Márkus BG, Gmitra M, Dóra B, Csősz G, Fehér T, Szirmai P, Náfrádi B, Zólyomi V, Forró L, Fabian J, Simon F. Ultralong 100 ns spin relaxation time in graphite at room temperature. Nat Commun 2023; 14:2831. [PMID: 37198155 DOI: 10.1038/s41467-023-38288-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Accepted: 04/24/2023] [Indexed: 05/19/2023] Open
Abstract
Graphite has been intensively studied, yet its electron spins dynamics remains an unresolved problem even 70 years after the first experiments. The central quantities, the longitudinal (T1) and transverse (T2) relaxation times were postulated to be equal, mirroring standard metals, but T1 has never been measured for graphite. Here, based on a detailed band structure calculation including spin-orbit coupling, we predict an unexpected behavior of the relaxation times. We find, based on saturation ESR measurements, that T1 is markedly different from T2. Spins injected with perpendicular polarization with respect to the graphene plane have an extraordinarily long lifetime of 100 ns at room temperature. This is ten times more than in the best graphene samples. The spin diffusion length across graphite planes is thus expected to be ultralong, on the scale of ~ 70 μm, suggesting that thin films of graphite - or multilayer AB graphene stacks - can be excellent platforms for spintronics applications compatible with 2D van der Waals technologies. Finally, we provide a qualitative account of the observed spin relaxation based on the anisotropic spin admixture of the Bloch states in graphite obtained from density functional theory calculations.
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Affiliation(s)
- B G Márkus
- Stavropoulos Center for Complex Quantum Matter, Department of Physics and Astronomy, University of Notre Dame, Notre Dame, IN, 46556, USA
- Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Budapest, H-1525, Hungary
- Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rkp. 3., H-1111, Budapest, Hungary
| | - M Gmitra
- Institute of Physics, Pavol Jozef Šafárik University in Košice, Park Angelinum 9, 040 01, Košice, Slovakia
- Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, 04001, Košice, Slovakia
| | - B Dóra
- Department of Theoretical Physics, Institute of Physics and MTA-BME Lendület Topology and Correlation Research Group Budapest University of Technology and Economics, Műegyetem rkp. 3., H-1111, Budapest, Hungary
| | - G Csősz
- Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rkp. 3., H-1111, Budapest, Hungary
| | - T Fehér
- Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rkp. 3., H-1111, Budapest, Hungary
| | - P Szirmai
- Laboratory of Physics of Complex Matter, École Polytechnique Fédérale de Lausanne, Lausanne, CH-1015, Switzerland
| | - B Náfrádi
- Laboratory of Physics of Complex Matter, École Polytechnique Fédérale de Lausanne, Lausanne, CH-1015, Switzerland
| | - V Zólyomi
- STFC Hartree Centre, Daresbury Laboratory, Daresbury, Warrington WA4 4AD, UK
| | - L Forró
- Stavropoulos Center for Complex Quantum Matter, Department of Physics and Astronomy, University of Notre Dame, Notre Dame, IN, 46556, USA
- Laboratory of Physics of Complex Matter, École Polytechnique Fédérale de Lausanne, Lausanne, CH-1015, Switzerland
| | - J Fabian
- Department of Physics, University of Regensburg, 93040, Regensburg, Germany.
| | - F Simon
- Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Budapest, H-1525, Hungary.
- Department of Physics, Institute of Physics and ELKH-BME Condensed Matter Research Group Budapest University of Technology and Economics, Műegyetem rkp. 3., H-1111, Budapest, Hungary.
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Zhao B, Ngaloy R, Ghosh S, Ershadrad S, Gupta R, Ali K, Hoque AM, Karpiak B, Khokhriakov D, Polley C, Thiagarajan B, Kalaboukhov A, Svedlindh P, Sanyal B, Dash SP. A Room-Temperature Spin-Valve with van der Waals Ferromagnet Fe 5 GeTe 2 /Graphene Heterostructure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209113. [PMID: 36641649 DOI: 10.1002/adma.202209113] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
The discovery of van der Waals (vdW) magnets opened a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW ferromagnets are limited to cryogenic temperatures, inhibiting their broader practical applications. Here, the robust room-temperature operation of lateral spin-valve devices using the vdW itinerant ferromagnet Fe5 GeTe2 in heterostructures with graphene is demonstrated. The room-temperature spintronic properties of Fe5 GeTe2 are measured at the interface with graphene with a negative spin polarization. Lateral spin-valve and spin-precession measurements provide unique insights by probing the Fe5 GeTe2 /graphene interface spintronic properties via spin-dynamics measurements, revealing multidirectional spin polarization. Density functional theory calculations in conjunction with Monte Carlo simulations reveal significantly canted Fe magnetic moments in Fe5 GeTe2 along with the presence of negative spin polarization at the Fe5 GeTe2 /graphene interface. These findings open opportunities for vdW interface design and applications of vdW-magnet-based spintronic devices at ambient temperatures.
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Affiliation(s)
- Bing Zhao
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Roselle Ngaloy
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Sukanya Ghosh
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Soheil Ershadrad
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Rahul Gupta
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
- Department of Materials Science and Engineering, Uppsala University, Box 35, Uppsala, SE-751 03, Sweden
| | - Khadiza Ali
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
- MAX IV Laboratory, Lund University, Lund, SE-221 00, Sweden
| | - Anamul Md Hoque
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Bogdan Karpiak
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Dmitrii Khokhriakov
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Craig Polley
- MAX IV Laboratory, Lund University, Lund, SE-221 00, Sweden
| | | | - Alexei Kalaboukhov
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
| | - Peter Svedlindh
- Department of Materials Science and Engineering, Uppsala University, Box 35, Uppsala, SE-751 03, Sweden
| | - Biplab Sanyal
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Saroj P Dash
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
- Graphene Center, Chalmers University of Technology, Göteborg, SE-41296, Sweden
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Wu Y, Li J, Liu Y. Two-dimensional chalcogenide-based ferromagnetic semiconductors. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:083002. [PMID: 36540916 DOI: 10.1088/1361-648x/acaa7e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Accepted: 12/09/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) magnetic materials draw an enormous amount of attention due to their novel physical properties and potential spintronics device applications. Room-temperature ferromagnetic (FM) semiconductors have long been pursued in 2D magnetic materials, which show a long range magnetic order down to atomic-layer thickness. The intrinsic ferromagnetism has been predicted in a series of 2D materials and verified in experiments and the magnetism can be modulated by multiple physical fields, exhibiting promising application prospects. In this review, we overview several types of 2D chalcogenide-based FM semiconductors discovered in recent years. We summary and compare their basic physical properties, including the crystal structures, electronic structures, and mechanical stability. The 2D magnetism can be described by several physical models. We also focus on the recent progresses about theoretical prediction of FM semiconductors and experimental observation of external-field regulation. Most of investigations have shown that 2D chalcogenide-based FM semiconductors have relatively high Curie temperature (Tc) and structural stability. These materials are promising to realize the room-temperature ferromagnetism in atomic-layer thickness, which is significant to design spintronics devices.
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Affiliation(s)
- Yanling Wu
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Jun Li
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Yong Liu
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
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