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Han S, Ye X, Zhou X, Liu Z, Guo Y, Wang M, Ji W, Wang Y, Du J. Solid-state spin coherence time approaching the physical limit. SCIENCE ADVANCES 2025; 11:eadr9298. [PMID: 40020055 PMCID: PMC11870053 DOI: 10.1126/sciadv.adr9298] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2024] [Accepted: 01/28/2025] [Indexed: 03/03/2025]
Abstract
Extending the coherence time of quantum systems to their physical limit is a long-standing pursuit and critical for developing quantum science and technology. By characterizing all the microscopic noise sources of the electronic spin [nitrogen-vacancy (NV) center] in diamonds using complete noise spectroscopy, we observe a previously unforeseen noise spectrum manifested as the empirical limit ([Formula: see text]) that has puzzled researchers for decades in various solid-state systems. By implementing a corresponding dynamical decoupling strategy, we are able to surpass the empirical limit and approach the upper physical limit T2 = 2T1 for NVs, from room temperature down to 220 kelvin. Our observations, including the independence across different spatial sites and its dependence on temperature in the same way as spin-lattice relaxation, suggest an emerging decoherence mechanism dominated by spin-lattice interaction. These results provide a unified and universal strategy for characterizing and controlling microscopic noises, thereby paving the way for achieving the physical limit in various solid-state systems.
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Affiliation(s)
- Shuo Han
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China, Hefei 230026, China
| | - Xiangyu Ye
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China, Hefei 230026, China
| | - Xu Zhou
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Zhaoxin Liu
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China, Hefei 230026, China
| | - Yuhang Guo
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China, Hefei 230026, China
| | - Mengqi Wang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China, Hefei 230026, China
| | - Wentao Ji
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China, Hefei 230026, China
| | - Ya Wang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Jiangfeng Du
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
- Institute of Quantum Sensing and School of Physics, Zhejiang University, Hangzhou 310027, China
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Mariano LA, Nguyen VHA, Petersen JB, Björnsson M, Bendix J, Eaton GR, Eaton SS, Lunghi A. The role of electronic excited states in the spin-lattice relaxation of spin-1/2 molecules. SCIENCE ADVANCES 2025; 11:eadr0168. [PMID: 39937899 DOI: 10.1126/sciadv.adr0168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2024] [Accepted: 01/09/2025] [Indexed: 02/14/2025]
Abstract
Magnetic resonance is a prime method for the study of chemical and biological structures and their dynamical processes. The interpretation of many of these experiments relies on understanding how the spin of unpaired electrons exchanges energy with their environment, or lattice, and relaxes to equilibrium. Here, we overcome the common use of effective spin Hamiltonians to describe spin-lattice relaxation in spin-1/2 and apply ab initio open quantum systems theory to their full molecular electronic wavefunction. Simulations for two Cr(V) coordination compounds under this framework show a marked improvement in accuracy and demonstrate that relaxation in spin-1/2 molecules is enabled by virtual transitions to molecular excited states with energy approaching 20,000 cm-1. This work establishes a connection between the original theory of Van Vleck and modern electronic structure methods, ultimately exemplifying the urgency of further advancing an ab initio approach to spin-lattice relaxation.
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Affiliation(s)
- Lorenzo A Mariano
- School of Physics, AMBER and CRANN Institute, Trinity College, Dublin 2, Ireland
| | - Vu Ha Anh Nguyen
- School of Physics, AMBER and CRANN Institute, Trinity College, Dublin 2, Ireland
| | - Jonatan B Petersen
- Department of Chemistry, The University of Manchester, Manchester M13 9PL, UK
| | - Magnus Björnsson
- Department of Chemistry, University of Copenhagen, DK-2100 Copenhagen, Denmark
| | - Jesper Bendix
- Department of Chemistry, University of Copenhagen, DK-2100 Copenhagen, Denmark
| | - Gareth R Eaton
- Department of Chemistry and Biochemistry, University of Denver, Denver, CO 80210, USA
| | - Sandra S Eaton
- Department of Chemistry and Biochemistry, University of Denver, Denver, CO 80210, USA
| | - Alessandro Lunghi
- School of Physics, AMBER and CRANN Institute, Trinity College, Dublin 2, Ireland
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Gong R, Du X, Janzen E, Liu V, Liu Z, He G, Ye B, Li T, Yao NY, Edgar JH, Henriksen EA, Zu C. Isotope engineering for spin defects in van der Waals materials. Nat Commun 2024; 15:104. [PMID: 38168074 PMCID: PMC10761865 DOI: 10.1038/s41467-023-44494-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Accepted: 12/14/2023] [Indexed: 01/05/2024] Open
Abstract
Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ([Formula: see text]) in hexagonal boron nitride (hBN), we grow isotopically purified h10B15N crystals. Compared to [Formula: see text] in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded [Formula: see text] spin transitions as well as extended coherence time T2 and relaxation time T1. For quantum sensing, [Formula: see text] centers in our h10B15N samples exhibit a factor of 4 (2) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the [Formula: see text] hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor 15N nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.
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Affiliation(s)
- Ruotian Gong
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Xinyi Du
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Eli Janzen
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Vincent Liu
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Zhongyuan Liu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Guanghui He
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Bingtian Ye
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Norman Y Yao
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - James H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Erik A Henriksen
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA
| | - Chong Zu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA.
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA.
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Happacher J, Bocquel J, Dinani HT, Tschudin MA, Reiser P, Broadway DA, Maze JR, Maletinsky P. Temperature-Dependent Photophysics of Single NV Centers in Diamond. PHYSICAL REVIEW LETTERS 2023; 131:086904. [PMID: 37683170 DOI: 10.1103/physrevlett.131.086904] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Revised: 04/26/2023] [Accepted: 06/14/2023] [Indexed: 09/10/2023]
Abstract
We present a comprehensive study of the temperature- and magnetic-field-dependent photoluminescence (PL) of individual NV centers in diamond, spanning the temperature-range from cryogenic to ambient conditions. We directly observe the emergence of the NV's room-temperature effective excited-state structure and provide a clear explanation for a previously poorly understood broad quenching of NV PL at intermediate temperatures around 50 K, as well as the subsequent revival of NV PL. We develop a model based on two-phonon orbital averaging that quantitatively explains all of our findings, including the strong impact that strain has on the temperature dependence of the NV's PL. These results complete our understanding of orbital averaging in the NV excited state and have significant implications for the fundamental understanding of the NV center and its applications in quantum sensing.
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Affiliation(s)
- Jodok Happacher
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - Juanita Bocquel
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - Hossein T Dinani
- Escuela de Ingeniería, Facultad de Ciencias, Ingeniería y Tecnología, Universidad Mayor, Santiago 7500994, Chile
| | - Märta A Tschudin
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - Patrick Reiser
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - David A Broadway
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
| | - Jeronimo R Maze
- Facultad de Física, Pontificia Universidad Católica de Chile, Santiago 7820436, Chile
| | - Patrick Maletinsky
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland
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