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Prodan DV, Paradezhenko GV, Yudin D, Pervishko AA. An ab initio approach to anisotropic alloying into the Si(001) surface. Phys Chem Chem Phys 2023; 25:5501-5509. [PMID: 36723199 DOI: 10.1039/d2cp04405f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/19/2023]
Abstract
By employing density functional theory calculations, we explore the initial stage of competitive alloying of co-deposited silver and indium atoms into a silicon surface. In particular, we identify respective adsorption positions and activation barriers governing their diffusion on a dimer-reconstructed silicon surface. Furthermore, we develop a growth model that appropriately describes diffusion mechanisms and silicon morphology with the account of silicon dimerization and the presence of C-type defects. Based on the surface kinetic Monte Carlo simulations, we examine the dynamics of bimetallic adsorption and elaborate on the temperature effects on the submonolayer growth of an Ag-In alloy. A close inspection of adatom migration clearly indicates effective nucleation of Ag and In atoms, followed by the formation of orthogonal atomic chains. We show that the epitaxial bimetallic growth might potentially lead to exotic ordering of adatoms in the form of anisotropic two-dimensional lattices via orthogonally oriented single-metal rows. We argue that this scenario becomes favorable provided above room temperature, while our numerical results are shown to be in agreement with the experimental findings.
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Affiliation(s)
- D V Prodan
- Skolkovo Institute of Science and Technology, Moscow 121205, Russia.
| | - G V Paradezhenko
- Skolkovo Institute of Science and Technology, Moscow 121205, Russia.
| | - D Yudin
- Skolkovo Institute of Science and Technology, Moscow 121205, Russia.
| | - A A Pervishko
- Skolkovo Institute of Science and Technology, Moscow 121205, Russia.
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Huang K, Huang X, Nogami J. Isolated and assembled silver aggregates on the Si(001) surface: the initial stage of film formation. Phys Chem Chem Phys 2021; 23:4161-4166. [PMID: 33564800 DOI: 10.1039/d0cp06353c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We examined the dynamics of adsorption and the subsequent growth of submonolayered silver on Si(001) from 100 K to 230 K, using scanning tunneling microscopy and density functional theory. The dynamics is demonstrated to depend on substrate temperature, as described in the following three stages: (I) at 100-140 K, silver is adsorbed as isolated aggregates (regular-Ag4, variant-Ag4 and Ag2), in the absence of single silver adatoms. The spontaneous formation of silver aggregates arises from the hot-atom motion upon the initial impingement of individual silver atoms onto the Si(001) substrate. (II) At 140-190 K, the migration of isolated Ag-aggregates is sufficiently activated, leading to the formation of Ag-chains by surface polymerization. (III) At 190-230 K, there is implication that the Ag-chains become mobile on Si(001), en route to forming patches of 2×2 Ag-films by agglomeration.
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Affiliation(s)
- Kai Huang
- Chemistry Program, Guangdong Technion Israel Institute of Technology, 241 Daxue Road, Shantou, Guangdong Province 515603, China.
| | - Xiaohang Huang
- Chemistry Program, Guangdong Technion Israel Institute of Technology, 241 Daxue Road, Shantou, Guangdong Province 515603, China.
| | - Jun Nogami
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4, Canada.
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Huang K, Huxter WS, Singh CV, Nogami J. Identification of Tetramers in Silver Films Grown on the Si(001) Surface at Room Temperature. J Phys Chem Lett 2018; 9:6275-6279. [PMID: 30339031 DOI: 10.1021/acs.jpclett.8b02746] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We describe the atomic structure of the silver film grown on Si(001) at room temperature, as studied by low-temperature scanning tunneling microscopy and density functional theory. Experiment and theory agree on a film structure in which Ag tetramers are identified for the first time. Ag tetramers are found to be adsorbed exclusively at the trough between two Si rows, interacting with four adjacent Si dimers via covalent bonding. Consequently, the π bonds of the Si dimers underneath the silver film are eliminated.
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Affiliation(s)
- Kai Huang
- Department of Materials Science and Engineering , University of Toronto , 184 College Street , Toronto , Ontario M5S 3E4 , Canada
| | - William S Huxter
- Department of Materials Science and Engineering , University of Toronto , 184 College Street , Toronto , Ontario M5S 3E4 , Canada
| | - Chandra Veer Singh
- Department of Materials Science and Engineering , University of Toronto , 184 College Street , Toronto , Ontario M5S 3E4 , Canada
- Department of Mechanical and Industrial Engineering , University of Toronto , 5 King's College Road , Toronto , Ontario M5S 3G8 , Canada
| | - Jun Nogami
- Department of Materials Science and Engineering , University of Toronto , 184 College Street , Toronto , Ontario M5S 3E4 , Canada
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Luo FCH, Hembree GG, Venables JA. Initial Growth of Ag/Si(100) Studied with High Spatial Resolution Aes and Sem. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-202-49] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTThe initial growth of Ag on reconstructed Si(100) has been studied with biassed secondary electron imaging (b-SEI) and Auger electron spectroscopy (AES) in an ultra-high vacuum (UHV) scanning transmission microscope (STEM) with nanometer resolution. Small Ag islands have been observed with strong contrast in b-SE images. Anisotropic growth, correlated with the (2×1) and (1×2) dimer reconstruction, is seen at room temperature and sub-monolayer (ML) coverage. Large Ag islands (∼1 μm) formed at 475 °C substrate temperature have even more dramatic forms with large aspect ratios. The Stranski-Krastanov (SK) mode is confirmed at both temperatures by AES and b-SEI between the islands, with the intermediate layer coverage equal to 0.5 ML or less.
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Wang X, Zuo J, Keil P, Grundmeier G. Comparing the growth of PVD silver nanoparticles on ultra thin fluorocarbon plasma polymer films and self-assembled fluoroalkyl silane monolayers. NANOTECHNOLOGY 2007; 18:265303. [PMID: 21730397 DOI: 10.1088/0957-4484/18/26/265303] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Adsorbed silver nanoparticles were prepared by means of electron beam evaporation of silver on ultra thin Si-supported heptadecafluoro-1-decene plasma polymer films and self-assembled heptadecafluorodecyl-trimethoxysilane monolayers. The morphology of the silver nanoparticles, characterized by their size, size distribution, shape and interparticle separation, was observed to depend on the type, chemical composition and surface energy of the sub-layer as well as the amount of silver deposited. Field emission-scanning electron microscopy was used to study the change in the morphology of the silver nanoparticles as a function of the preparation parameters. The silver nanoparticles on the ultra thin plasma polymer films demonstrated a much smaller and narrower size distribution due to the cross-linking within the film, which more effectively hinders the penetration of silver through the film in comparison to the self-assembled monolayers. Moreover, the optical properties of the resulting silver nanoparticles on the ultra thin fluorocarbon plasma polymers and their correlation to size and size distribution were investigated by spectroscopic ellipsometry in the wavelength range between 300 and 800 nm.
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Affiliation(s)
- Xuemei Wang
- Max-Planck-Institut fuer Eisenforschung GmbH, Max-Planck-Straße 1, D-40237 Dusseldorf, Germany
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Márquez K, Ortiz R, Schultze J, Márquez O, Márquez J, Staikov G. In situ FTIR monitoring of Ag and Au electrodeposition on glassy carbon and silicon. Electrochim Acta 2003. [DOI: 10.1016/s0013-4686(02)00740-5] [Citation(s) in RCA: 23] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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Chapter 12 Intrinsic stress of epitaxial thin films and surface layers. ACTA ACUST UNITED AC 1997. [DOI: 10.1016/s1571-0785(97)80015-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Glueckstein JC, Evans MM, Nogami J. Surface unwetting during growth of Ag on Si(001). PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:R11066-R11069. [PMID: 9984987 DOI: 10.1103/physrevb.54.r11066] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Tober ED, Ynzunza RX, Westphal C, Fadley CS. Relationship between morphology and magnetic behavior for Gd thin films on W(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:5444-5448. [PMID: 9984151 DOI: 10.1103/physrevb.53.5444] [Citation(s) in RCA: 28] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Kimura K, Ohshima K, Mannami M. Initial stage of Ag growth on Si(001) studied by high-resolution Rutherford-backscattering spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:5737-5742. [PMID: 9981759 DOI: 10.1103/physrevb.52.5737] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Doraiswamy N, Jayaram G, Marks LD. Unusual island structures in Ag growth on Si(100)-(2 x 1). PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:10167-10170. [PMID: 9977695 DOI: 10.1103/physrevb.51.10167] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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McCoy JM, LaFemina JP. Monte Carlo simulations of growth of Sb atoms on the GaAs(110) surface. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:17127-17138. [PMID: 9976112 DOI: 10.1103/physrevb.50.17127] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Spiess L, Freeman AJ, Soukiassian P. Ge(100) 2 x 1 and c(4 x 2) surface reconstructions studied by ab initio total-energy molecular-force calculations. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:2249-2258. [PMID: 9976442 DOI: 10.1103/physrevb.50.2249] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Cho JH, Kang MH. Atomic structure of the Ge/Si(100)-(2 x 1) surface. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:13670-13673. [PMID: 10010308 DOI: 10.1103/physrevb.49.13670] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Borensztein Y, Alameh R, Roy M. Sudden beginning of metallic behavior at Ag/Si(100) interface: A real-time photoreflectance-spectroscopy investigation. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:14737-14740. [PMID: 10007914 DOI: 10.1103/physrevb.48.14737] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Lin XF, Wan KJ, Nogami J. Ag on the Si(001) surface: Growth of the first monolayer at room temperature. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:13491-13497. [PMID: 10005659 DOI: 10.1103/physrevb.47.13491] [Citation(s) in RCA: 28] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Tang S, Freeman AJ, Delley B. Structure of the Si(100)2 x 1 surface: Total-energy and force analysis of the dimer models. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:1776-1783. [PMID: 10001679 DOI: 10.1103/physrevb.45.1776] [Citation(s) in RCA: 35] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Li YZ, Patrin JC, Chen Y, Weaver JH. Mg ordering, reaction, and crystallite formation on GaAs(110): Scanning tunneling microscopy and photoemission studies. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:8843-8849. [PMID: 9998842 DOI: 10.1103/physrevb.44.8843] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Yang Y, Trafas BM, Luo Y, Siefert RL, Weaver JH. Effect of nonthermally activated hopping on overlayer morphology: Scanning-tunneling-microscopy study of Ti/GaAs(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:5720-5725. [PMID: 9998415 DOI: 10.1103/physrevb.44.5720] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Trafas BM, Yang Y, Siefert RL, Weaver JH. Scanning tunneling microscopy of Ag growth on GaAs(110) at 300 K: From clusters to crystallites. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:14107-14114. [PMID: 9997280 DOI: 10.1103/physrevb.43.14107] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Samsavar A, Hirschorn ES, Miller T, Leibsle FM, Eades JA, Chiang T. High-resolution imaging of a dislocation on Cu(111). PHYSICAL REVIEW LETTERS 1990; 65:1607-1610. [PMID: 10042313 DOI: 10.1103/physrevlett.65.1607] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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25
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Franklin GE, Rich DH, Samsavar A, Hirschorn ES, Leibsle FM, Miller T, Chiang T. Photoemission and scanning-tunneling-microscopy study of GaSb(100). PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:12619-12627. [PMID: 9993736 DOI: 10.1103/physrevb.41.12619] [Citation(s) in RCA: 22] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ogletree F, Salmeron M. Scanning tunneling microscopy and the atomic structure of solid surfaces. PROG SOLID STATE CH 1990. [DOI: 10.1016/0079-6786(90)90002-w] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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