Disorder and interactions in the Hubbard model

Disorder screening in strongly correlated systems

Electron-electron interactions generally reduce the low temperature resistivity due to the screening of the impurity potential by the electron gas. In the weak-coupling limit, the magnitude of this screening effect is determined by the thermodynamic compressibility which is proportional to the inverse screening length. We show that when strong correlations are present, although the compressibility is reduced, the screening effect is nevertheless strongly enhanced. This phenomenon is traced to the same nonperturbative Kondo-like processes that lead to strong mass enhancements, but which are absent in weak-coupling approaches. We predict metallicity to be strongly stabilized in an intermediate regime where the interactions and the disorder are of comparable magnitude.

Observation of disorder-induced 2D mott-hubbard states of the alkali-earth metal (Mg,Ba)-adsorbed Si(111) surface

We report evidence of a disorder-driven Mott-Hubbard-type localization on the alkali-earth metal (AEM) (Mg,Ba)-adsorbed Si(111)-(7x7) surface. The clean metallic Si(111) surface is found to undergo a two-dimensional (2D) metal-insulator transition as randomly distributed AEM adsorbates cause disorder on the surface. A well-defined electron-energy-loss peak unique to the insulating phase is attributed to an interband excitation between the split Hubbard bands originated from a metallic surface band at Fermi energy. A quantitative analysis of the loss peak reveals that the AEM-induced insulating surfaces are of a Mott-Hubbard type driven essentially by disorder.