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Chen P, Chen YT, Liu RY, Chen HD, Lin D, Fedorov AV, Chiang TC. Atomic-Scale Chemical Conversion of Single-Layer Transition Metal Dichalcogenides. ACS NANO 2019; 13:5611-5615. [PMID: 30987421 DOI: 10.1021/acsnano.9b00756] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Chemical conversion by atomic substitution offers a powerful route toward the creation of unusual structures and functionalities. Here, we demonstrate the progressive transformation of single-layer TiTe2 into TiSe2 by reaction with a Se flux in vacuum. Angle-resolved photoemission spectroscopy and scanning tunneling microscopy reveal intriguing reaction patterns involving TiSe2 island ingrowth starting from the TiTe2 island edges, while the band structure and core level signatures of TiSe2 grow in intensity at the expense of those corresponding to TiTe2. Lattice mismatch between TiTe2 and TiSe2 results in misfit holes and lattice distortions over a distance behind a seamless fingerlike reaction front. The regions of TiSe2 and TiTe2 are distinguished by a height difference and a charge density wave (CDW) at different transition temperatures. The method of in situ chemical conversion offers opportunities for atomic-scale engineering of layered transition metal dichalcogenides that host useful properties arising from CDW, Dirac, Weyl, superconducting, spin-valley, and magnetic structures.
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Affiliation(s)
- Peng Chen
- Department of Physics , University of Illinois at Urbana-Champaign , 1110 West Green Street , Urbana , Illinois 61801-3080 , United States
- Frederick Seitz Materials Research Laboratory , University of Illinois at Urbana-Champaign , 104 South Goodwin Avenue , Urbana , Illinois 61801-2902 , United States
- Advanced Light Source , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Yun-Ting Chen
- Department of Physics , National Tsing Hua University , Hsinchu 30013 , Taiwan
| | - Ro-Ya Liu
- Department of Physics , University of Illinois at Urbana-Champaign , 1110 West Green Street , Urbana , Illinois 61801-3080 , United States
- Frederick Seitz Materials Research Laboratory , University of Illinois at Urbana-Champaign , 104 South Goodwin Avenue , Urbana , Illinois 61801-2902 , United States
- Advanced Light Source , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
- Institute of Physics , Academia Sinica , Taipei 11529 , Taiwan
| | - Han-De Chen
- Department of Physics , National Tsing Hua University , Hsinchu 30013 , Taiwan
| | - Dengsung Lin
- Department of Physics , National Tsing Hua University , Hsinchu 30013 , Taiwan
| | - Alexei V Fedorov
- Advanced Light Source , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Tai-Chang Chiang
- Department of Physics , University of Illinois at Urbana-Champaign , 1110 West Green Street , Urbana , Illinois 61801-3080 , United States
- Frederick Seitz Materials Research Laboratory , University of Illinois at Urbana-Champaign , 104 South Goodwin Avenue , Urbana , Illinois 61801-2902 , United States
- Department of Physics , National Taiwan University , Taipei 10617 , Taiwan
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Zhang X, Han J, Plombon JJ, Sutton AP, Srolovitz DJ, Boland JJ. Nanocrystalline copper films are never flat. Science 2017; 357:397-400. [DOI: 10.1126/science.aan4797] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/20/2017] [Accepted: 06/21/2017] [Indexed: 11/02/2022]
Affiliation(s)
- Xiaopu Zhang
- School of Chemistry, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin 2, Ireland
| | - Jian Han
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA
| | - John J. Plombon
- Components Research, Intel Corporation, Hillsboro, OR 97124, USA
| | - Adrian P. Sutton
- Department of Physics, Imperial College London, Exhibition Road, London SW7 2AZ, UK
| | - David J. Srolovitz
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA
- Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, PA 19104, USA
| | - John J. Boland
- School of Chemistry, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin 2, Ireland
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Saha SK, Manna S, Stepanyuk VS, Kirschner J. Visualizing Non-abrupt Transition of Quantum Well States at Stepped Silver Surfaces. Sci Rep 2015; 5:12847. [PMID: 26243639 PMCID: PMC4525284 DOI: 10.1038/srep12847] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2015] [Accepted: 07/10/2015] [Indexed: 11/09/2022] Open
Abstract
We use scanning tunneling spectroscopy (STS) experiments and first-principles density functional theory (DFT) calculations to address a fundamental question of how quantum well (QW) states for electrons in a metal evolve spatially in the lateral direction when there is a surface step that changes the vertical confinement thickness. This study reveals a clear spatially dependent, nearly continuous trend in the energetic shifts of quantum well (QW) states of thin Ag(111) film grown on Cu(111) substrate, showing the strongest change near the step edge. A large energetic shift equaling up to ~200 meV with a lateral extension of the QW states of the order of ~20 Å is found, even though the step-edge is atomically sharp as evidenced by a line scan. The observed lateral extension and the nearly smooth transition of QW states are understood within the context of step-induced charge oscillation, and Smoluchowski-type charge spreading and smoothing.
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Affiliation(s)
| | - Sujit Manna
- Max-Planck-Institut für Mikrostrukturphysik, 06120 Halle, Germany
| | | | - Jürgen Kirschner
- 1] Max-Planck-Institut für Mikrostrukturphysik, 06120 Halle, Germany [2] Martin-Luther-Universität Halle-Wittenberg, 06120 Halle, Germany
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Such B, Glatzel T, Kawai S, Meyer E, Turanský R, Brndiar J, Stich I. Interplay of the tip-sample junction stability and image contrast reversal on a Cu(111) surface revealed by the 3D force field. NANOTECHNOLOGY 2012; 23:045705. [PMID: 22222632 DOI: 10.1088/0957-4484/23/4/045705] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Non-contact atomic force microscopy is used to measure the 3D force field on a dense-packed Cu(111) surface. An unexpected image contrast reversal is observed as the tip is moved towards the surface, with atoms appearing first as bright spots, whereas hollow and bridge sites turn bright at smaller tip-sample distances. Computer modeling is used to elucidate the nature of the image contrast. We find that the contrast reversal is essentially a geometrical effect, which, unlike in gold, is observable in Cu due to an unusually large stability of the tip-sample junction over large distances.
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Affiliation(s)
- Bartosz Such
- Centre for Nanometer-Scale Science and Advanced Materials (NANOSAM), Jagiellonian University, Krakow, Poland.
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Christiansen J, Morgenstern K, Schiøtz J, Jacobsen KW, Braun KF, Rieder KH, Laegsgaard E, Besenbacher F. Atomic-scale structure of dislocations revealed by scanning tunneling microscopy and molecular dynamics. PHYSICAL REVIEW LETTERS 2002; 88:206106. [PMID: 12005584 DOI: 10.1103/physrevlett.88.206106] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2001] [Indexed: 05/23/2023]
Abstract
The intersection between dislocations and a Ag(111) surface has been studied using an interplay of scanning tunneling microscopy (STM) and molecular dynamics. Whereas the STM provides atomically resolved information about the surface structure and Burgers vectors of the dislocations, the simulations can be used to determine dislocation structure and orientation in the near-surface region. In a similar way, the subsurface structure of other extended defects can be studied. The simulations show dislocations to reorient the partials in the surface region leading to an increased splitting width at the surface, in agreement with the STM observations. Implications for surface-induced cross slip are discussed.
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Affiliation(s)
- J Christiansen
- CAMP and Department of Physics, Technical University of Denmark, DK-2800 Lyngby, Denmark
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Cox G, Ebert P, Poppe U, Simon M, Urban K. Dislocation reaction on p-doped GaAs (011) observed by scanning tunnelling microscopy. Ultramicroscopy 1992. [DOI: 10.1016/0304-3991(92)90357-p] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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Gimzewski JK, Berndt R, Schlittler RR. Scanning-tunneling-microscope study of antiphase domain boundaries, dislocations, and local mass transport on Au(110) surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:6844-6857. [PMID: 10000447 DOI: 10.1103/physrevb.45.6844] [Citation(s) in RCA: 47] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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