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Wang Q, Wee ATS. Photoluminescence upconversion of 2D materials and applications. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:223001. [PMID: 33784662 DOI: 10.1088/1361-648x/abf37f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2021] [Accepted: 03/30/2021] [Indexed: 06/12/2023]
Abstract
Photoluminescence (PL) upconversion is a phenomenon involving light-matter interactions, where the energy of emitted photons is higher than that of the incident photons. PL upconversion is an intriguing process in two-dimensional materials and specifically designed 2D heterostructures, which have potential upconversion applications in optoelectronic devices, bioimaging, and semiconductor cooling. In this review, we focus on the recent advances in photoluminescence upconversion in two-dimensional materials and their heterostructures. We discuss the upconversion mechanisms, applications, and future outlook of upconversion in two-dimensional materials.
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Affiliation(s)
- Qixing Wang
- Max Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
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Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures. Nat Commun 2019; 10:2335. [PMID: 31133651 PMCID: PMC6536535 DOI: 10.1038/s41467-019-10323-9] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2018] [Accepted: 04/29/2019] [Indexed: 11/08/2022] Open
Abstract
The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large pumping rates or in systems with long-lived electron-hole pairs. By electrically injecting carriers into WSe2/MoS2 type-II heterostructures which are indirect in real and k-space, we establish a large population of typical optically silent interlayer excitons. Here, we reveal their emission spectra and show that the emission energy is tunable by an applied electric field. When the population is further increased by suppressing the radiative recombination rate with the introduction of an hBN spacer between WSe2 and MoS2, Auger-type and exciton-exciton annihilation processes become important. These processes are traced by the observation of an up-converted emission demonstrating that excitons gaining energy in non-radiative Auger processes can be recovered and recombine radiatively.
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Deutsch Z, Neeman L, Oron D. Luminescence upconversion in colloidal double quantum dots. NATURE NANOTECHNOLOGY 2013; 8:649-53. [PMID: 23912060 DOI: 10.1038/nnano.2013.146] [Citation(s) in RCA: 38] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2013] [Accepted: 06/25/2013] [Indexed: 05/25/2023]
Abstract
Luminescence upconversion nanocrystals capable of converting two low-energy photons into a single photon at a higher energy are sought-after for a variety of applications, including bioimaging and photovoltaic light harvesting. Currently available systems, based on rare-earth-doped dielectrics, are limited in both tunability and absorption cross-section. Here we present colloidal double quantum dots as an alternative nanocrystalline upconversion system, combining the stability of an inorganic crystalline structure with the spectral tunability afforded by quantum confinement. By tailoring its composition and morphology, we form a semiconducting nanostructure in which excited electrons are delocalized over the entire structure, but a double potential well is formed for holes. Upconversion occurs by excitation of an electron in the lower energy transition, followed by intraband absorption of the hole, allowing it to cross the barrier to a higher energy state. An overall conversion efficiency of 0.1% per double excitation event is achieved.
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Affiliation(s)
- Zvicka Deutsch
- Department of Physics of Complex Systems, Weizmann Institute of Science, Rehovot 76100, Israel
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Wheeler DA, Zhang JZ. Exciton dynamics in semiconductor nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2013; 25:2878-2896. [PMID: 23625792 DOI: 10.1002/adma.201300362] [Citation(s) in RCA: 62] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2013] [Indexed: 06/02/2023]
Abstract
This review article provides an overview of recent advances in the study and understanding of dynamics of excitons in semiconductor nanocrystals (NCs) or quantum dots (QDs). Emphasis is placed on the relationship between exciton dynamics and optical properties, both linear and nonlinear. We also focus on the unique aspects of exciton dynamics in semiconductor NCs as compared to those in bulk crystals. Various experimental techniques for probing exciton dynamics, particularly time-resolved laser methods, are reviewed. Relevant models and computational studies are also briefly presented. By comparing different materials systems, a unifying picture is proposed to account for the major dynamic features of excitons in semiconductor QDs. While the specific dynamic processes involved are material-dependent, key processes can be identified for all the materials that include electronic dephasing, intraband relaxation, trapping, and interband recombination of free and trapped charge carriers (electron and hole). Exciton dynamics play a critical role in the fundamental properties and functionalities of nanomaterials of interest for a variety of applications including optical detectors, solar energy conversion, lasers, and sensors. A better understanding of exciton dynamics in nanomaterials is thus important both fundamentally and technologically.
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Affiliation(s)
- Damon A Wheeler
- Department of Chemistry & Biochemistry, University of California, Santa Cruz, CA 95064 USA, Fax: (831) 459-3776
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Belyanin AA, Kocharovsky VV, Kocharovsky VV. Collective QED processes of electron - hole recombination and electron - positron annihilation in a strong magnetic field. ACTA ACUST UNITED AC 1999. [DOI: 10.1088/1355-5111/9/1/002] [Citation(s) in RCA: 31] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Ferreira AC, Holtz PO, Sernelius BE, Buyanova I, Monemar B, Mauritz O, Ekenberg U, Sundaram M, Campman K, Merz JL, Gossard AC. Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:16989-16993. [PMID: 9985829 DOI: 10.1103/physrevb.54.16989] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Iikawa F, Abbade ML, Brum JA, Bernussi AA, Pereira RG, Borghs G. Magneto-optical experiments on GaAs/InxGa1-xAs/AlyGa1-yAs modulation-doped single quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:11360-11364. [PMID: 9984925 DOI: 10.1103/physrevb.54.11360] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Driessen FA, Cheong HM, Mascarenhas A, Deb SK, Hageman PR, Bauhuis GJ, Giling LJ. Interface-induced conversion of infrared to visible light at semiconductor interfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:R5263-R5266. [PMID: 9986584 DOI: 10.1103/physrevb.54.r5263] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Hannak RM, Rühle WW, Köhler K. Relaxation dynamics of electrons between Landau levels in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:R16137-R16139. [PMID: 9983516 DOI: 10.1103/physrevb.53.r16137] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Finkelstein G, Shtrikman H, Bar-Joseph I. Shakeup processes in the recombination spectra of negatively charged excitons. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:12593-12596. [PMID: 9982919 DOI: 10.1103/physrevb.53.12593] [Citation(s) in RCA: 48] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Badalian SM. Electron relaxation in the quantum-Hall-effect geometry: One- and two-phonon processes. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:14781-14788. [PMID: 9980816 DOI: 10.1103/physrevb.52.14781] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Levinson Y. Electron-electron scattering in a two-dimensional electron gas in a strong magnetic field. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:16898-16906. [PMID: 9978701 DOI: 10.1103/physrevb.51.16898] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Chen WM, Monemar B, Janzén E, Frens AM, Bennebroek MT, Schmidt J. Direct determination of the electron-electron-hole Auger threshold energy in silicon. PHYSICAL REVIEW LETTERS 1994; 73:3258-3261. [PMID: 10057331 DOI: 10.1103/physrevlett.73.3258] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Seidel W, Titkov A, André JP, Voisin P, Voos M. High-efficiency energy up-conversion by an "Auger fountain" at an InP-AlInAs type-II heterojunction. PHYSICAL REVIEW LETTERS 1994; 73:2356-2359. [PMID: 10057039 DOI: 10.1103/physrevlett.73.2356] [Citation(s) in RCA: 30] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Stepniewski R, Potemski M, Buhmann H, Toet D, Maan JC, Martinez G, Knap W, Raymond A, Etienne B. Magneto-optical spectroscopy of free- and bound-electron-hole excitations in the presence of a two-dimensional electron gas. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:11895-11901. [PMID: 9975329 DOI: 10.1103/physrevb.50.11895] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Moore KJ, Boring P, Gil B, Woodbridge K. Observation of many-body effects and band-gap renormalization in low-dimensional systems with built-in piezoelectric fields. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:18010-18015. [PMID: 10008438 DOI: 10.1103/physrevb.48.18010] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Harris CI, Monemar B, Kalt H, Köhler K. Doping-density dependence of photoluminescence in highly Si-doped GaAs/AlxGa1-xAs quantum wells from below to above the metallic limit. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:4687-4694. [PMID: 10008953 DOI: 10.1103/physrevb.48.4687] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Nash KJ, Skolnick MS, Saker MK, Bass SJ. Many body shakeup in quantum well luminescence spectra. PHYSICAL REVIEW LETTERS 1993; 70:3115-3118. [PMID: 10053779 DOI: 10.1103/physrevlett.70.3115] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Driessen FA, Olsthoorn SM, Berendschot TT, Giling LJ, Frigo DM, Jones GA, Ritchie DA, Frost JE. Fermi-edge-induced magnetophotoluminescence in high-carrier-density single heterojunctions. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:1282-1291. [PMID: 10006137 DOI: 10.1103/physrevb.47.1282] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Chen W, Fritze M, Walecki W, Nurmikko AV, Ackley D, Hong JM, Chang LL. Excitonic enhancement of the Fermi-edge singularity in a dense two-dimensional electron gas. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:8464-8477. [PMID: 10000683 DOI: 10.1103/physrevb.45.8464] [Citation(s) in RCA: 54] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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