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Nakamura S, Matsumaru D, Yamahata G, Oe T, Chae DH, Okazaki Y, Takada S, Maruyama M, Fujiwara A, Kaneko NH. Universality and Multiplication of Gigahertz-Operated Silicon Pumps with Parts Per Million-Level Uncertainty. NANO LETTERS 2024; 24:9-15. [PMID: 38115185 DOI: 10.1021/acs.nanolett.3c02858] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
The universality of physical phenomena is a pivotal concept underlying quantum standards. In this context, the realization of a quantum current standard using silicon single-electron pumps necessitates the verification of the equivalence across multiple devices. Herein, we experimentally investigate the universality of pumped currents from two different silicon single-electron devices which are placed inside the cryogen-free dilution refrigerator whose temperature (mixing chamber plate) was ∼150 mK under the operation of the pump devices. By direct comparison using an ultrastable current amplifier as a galvanometer, we confirm that two pumped currents are consistent with ∼1 ppm uncertainty. Furthermore, we realize quantum-current multiplication with a similar uncertainty by adding the currents of two different gigahertz (GHz)-operated silicon pumps, whose generated currents are confirmed to be identical. These results pave the way for realizing a quantum current standard in the nanoampere range and a quantum metrology triangle experiment using silicon pump devices.
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Affiliation(s)
- Shuji Nakamura
- National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8563, Japan
| | - Daiki Matsumaru
- National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8563, Japan
| | - Gento Yamahata
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Takehiko Oe
- National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8563, Japan
| | - Dong-Hun Chae
- Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Yuma Okazaki
- National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8563, Japan
| | - Shintaro Takada
- National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8563, Japan
| | - Michitaka Maruyama
- National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8563, Japan
| | - Akira Fujiwara
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Nobu-Hisa Kaneko
- National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8563, Japan
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Rigosi AF, Elmquist RE. The Quantum Hall Effect in the Era of the New SI. SEMICONDUCTOR SCIENCE AND TECHNOLOGY 2019; 34:10.1088/1361-6641/ab37d3. [PMID: 32165778 PMCID: PMC7067285 DOI: 10.1088/1361-6641/ab37d3] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
The quantum Hall effect (QHE), and devices reliant on it, will continue to serve as the foundation of the ohm while also expanding its territory into other SI derived units. The foundation, evolution, and significance of all of these devices exhibiting some form of the QHE will be described in the context of optimizing future electrical resistance standards. As the world adapts to using the quantum SI, it remains essential that the global metrology community pushes forth and continues to innovate and produce new technologies for disseminating the ohm and other electrical units.
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Affiliation(s)
- Albert F Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America
| | - Randolph E Elmquist
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America
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Rigosi AF, Glavin NR, Liu CI, Yang Y, Obrzut J, Hill HM, Hu J, Lee HY, Hight Walker AR, Richter CA, Elmquist RE, Newell DB. Preservation of Surface Conductivity and Dielectric Loss Tangent in Large-Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:10.1002/smll.201700452. [PMID: 28544485 PMCID: PMC5512105 DOI: 10.1002/smll.201700452] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2017] [Revised: 04/18/2017] [Indexed: 05/29/2023]
Abstract
Regarding the improvement of current quantized Hall resistance (QHR) standards, one promising avenue is the growth of homogeneous monolayer epitaxial graphene (EG). A clean and simple process is used to produce large, precise areas of EG. Properties like the surface conductivity and dielectric loss tangent remain unstable when EG is exposed to air due to doping from molecular adsorption. Experimental results are reported on the extraction of the surface conductivity and dielectric loss tangent from data taken with a noncontact resonance microwave cavity, assembled with an air-filled, standard R100 rectangular waveguide configuration. By using amorphous boron nitride (a-BN) as an encapsulation layer, stability of EG's electrical properties under ambient laboratory conditions is greatly improved. Moreover, samples are exposed to a variety of environmental and chemical conditions. Both thicknesses of a-BN encapsulation are sufficient to preserve surface conductivity and dielectric loss tangent to within 10% of its previously measured value, a result which has essential importance in the mass production of millimeter-scale graphene devices demonstrating electrical stability.
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Affiliation(s)
- Albert F. Rigosi
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Nicholas R. Glavin
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, United States
| | - Chieh-I Liu
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States. Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Yanfei Yang
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States. Joint Quantum Institute, University of Maryland, College Park, MD 20742, United States
| | - Jan Obrzut
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Heather M. Hill
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Jiuning Hu
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Hsin-Yen Lee
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States. Theiss Research, La Jolla, CA 92037, United States
| | - Angela R. Hight Walker
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Curt A. Richter
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Randolph E. Elmquist
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - David B. Newell
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
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Ribeiro-Palau R, Lafont F, Brun-Picard J, Kazazis D, Michon A, Cheynis F, Couturaud O, Consejo C, Jouault B, Poirier W, Schopfer F. Quantum Hall resistance standard in graphene devices under relaxed experimental conditions. NATURE NANOTECHNOLOGY 2015; 10:965-71. [PMID: 26344181 DOI: 10.1038/nnano.2015.192] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2015] [Accepted: 07/23/2015] [Indexed: 05/07/2023]
Abstract
The quantum Hall effect provides a universal standard for electrical resistance that is theoretically based on only the Planck constant h and the electron charge e. Currently, this standard is implemented in GaAs/AlGaAs, but graphene's electronic properties have given hope for a more practical device. Here, we demonstrate that the experimental conditions necessary for the operation of devices made of high-quality graphene grown by chemical vapour deposition on silicon carbide can be extended and significantly relaxed compared with those for state-of-the-art GaAs/AlGaAs devices. In particular, the Hall resistance can be accurately quantized to within 1 × 10(-9) over a 10 T wide range of magnetic flux density, down to 3.5 T, at a temperature of up to 10 K or with a current of up to 0.5 mA. This experimental simplification highlights the great potential of graphene in the development of user-friendly and versatile quantum standards that are compatible with broader industrial uses beyond those in national metrology institutes. Furthermore, the measured agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs, with an ultimate uncertainty of 8.2 × 10(-11), supports the universality of the quantum Hall effect. This also provides evidence of the relation of the quantized Hall resistance with h and e, which is crucial for the new Système International d'unités to be based on fixing such fundamental constants of nature.
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Affiliation(s)
- R Ribeiro-Palau
- LNE - Laboratoire National de Métrologie et d'Essais, 29 avenue Roger Hennequin, Trappes 78197, France
| | - F Lafont
- LNE - Laboratoire National de Métrologie et d'Essais, 29 avenue Roger Hennequin, Trappes 78197, France
| | - J Brun-Picard
- LNE - Laboratoire National de Métrologie et d'Essais, 29 avenue Roger Hennequin, Trappes 78197, France
| | - D Kazazis
- LPN - Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, Marcoussis 91460, France
| | - A Michon
- CRHEA - Centre de Recherche sur l'Hétéroépitaxie et ses Applications, CNRS, Rue Bernard Grégory, Valbonne 06560, France
| | - F Cheynis
- Aix Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille, France
| | - O Couturaud
- L2C - Laboratoire Charles Coulomb, CNRS-Université de Montpellier, Place Eugène Bataillon, Montpellier 34095, France
| | - C Consejo
- L2C - Laboratoire Charles Coulomb, CNRS-Université de Montpellier, Place Eugène Bataillon, Montpellier 34095, France
| | - B Jouault
- L2C - Laboratoire Charles Coulomb, CNRS-Université de Montpellier, Place Eugène Bataillon, Montpellier 34095, France
| | - W Poirier
- LNE - Laboratoire National de Métrologie et d'Essais, 29 avenue Roger Hennequin, Trappes 78197, France
| | - F Schopfer
- LNE - Laboratoire National de Métrologie et d'Essais, 29 avenue Roger Hennequin, Trappes 78197, France
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Janssen TJBM, Tzalenchuk A, Lara-Avila S, Kubatkin S, Fal'ko VI. Quantum resistance metrology using graphene. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2013; 76:104501. [PMID: 24088373 DOI: 10.1088/0034-4885/76/10/104501] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
In this paper, we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also briefly discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally, we discuss other possible applications of graphene in metrology.
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Affiliation(s)
- T J B M Janssen
- National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK
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Karshenboim SG. Progress in the accuracy of the fundamental physical constants: 2010 CODATA recommended values. ACTA ACUST UNITED AC 2013. [DOI: 10.3367/ufnr.0183.201309d.0935] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/01/2022]
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Weis J, von Klitzing K. Metrology and microscopic picture of the integer quantum Hall effect. PHILOSOPHICAL TRANSACTIONS. SERIES A, MATHEMATICAL, PHYSICAL, AND ENGINEERING SCIENCES 2011; 369:3954-3974. [PMID: 21930559 DOI: 10.1098/rsta.2011.0198] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Since 1990, the integer quantum Hall effect has provided the electrical resistance standard, and there has been a firm belief that the measured quantum Hall resistances are described only by fundamental physical constants--the elementary charge e and the Planck constant h. The metrological application seems not to rely on detailed knowledge of the microscopic picture of the quantum Hall effect; however, technical guidelines are recommended to confirm the quality of the sample to confirm the exactness of the measured resistance value. In this paper, we give our present understanding of the microscopic picture, derived from systematic scanning force microscopy investigations on GaAs/(AlGa)As quantum Hall samples, and relate these to the technical guidelines.
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Affiliation(s)
- J Weis
- Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany.
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Kawaji S. Experimental researches on quantum transport in semiconductor two-dimensional electron systems. PROCEEDINGS OF THE JAPAN ACADEMY. SERIES B, PHYSICAL AND BIOLOGICAL SCIENCES 2008; 84:199-231. [PMID: 18941299 PMCID: PMC3666646 DOI: 10.2183/pjab.84.199] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2008] [Accepted: 05/07/2008] [Indexed: 05/26/2023]
Abstract
The author reviews contribution of Gakushuin University group to the progress of the quantum transport in semiconductor two-dimensional electron systems (2DES) for forty years from the birth of the 2DES in middle of the 1960s till the finding of temperature dependent collapse of the quantized Hall resistance in the beginning of this century.
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Affiliation(s)
- Shinji Kawaji
- Department of Physics, Gakushuin University, Tokyo, Japan.
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Gallop J. The quantum electrical triangle. PHILOSOPHICAL TRANSACTIONS. SERIES A, MATHEMATICAL, PHYSICAL, AND ENGINEERING SCIENCES 2005; 363:2221-47. [PMID: 16147507 DOI: 10.1098/rsta.2005.1638] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
The past 35 years have seen the development of an unexpected plethora of quantum electrical standards based on just two fundamental constants, e and h. First came a voltage standard based on the Josephson a.c. effect, in terms of which most maintained primary standards of voltage are defined. This was followed a decade later by the quantized Hall effect, based on the von Klitzing constant which allows the ohm to be maintained very precisely. It became clear 20 years ago that there is also a possible quantum current standard. This third standard has yet to play a full part in practical electrical metrology. However, recent developments suggest that there are many different possible manifestations in which such a current standard might be realized. The three quantum standards, taken together, define the quantum electrical triangle of standards which would allow the units to be realized in terms of different combinations of e and h. We summarize the very different physics behind the three standards, reviewing the present state of development in all three. Implications for the future are also considered, especially relating to ultra-low temperature, nanoscale and truly quantum mechanical versions of the standards.
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Affiliation(s)
- John Gallop
- Quantum Detection Group, National Physical Laboratory, Queens Road, Teddington, Middlesex TW11 0LW, UK.
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Daly MS, Dalton KS, Lakrimi M, Mason NJ, Nicholas RJ, Walker PJ, Maude DK, Portal JC. Zero-Hall-resistance state in a semimetallic InAs/GaSb superlattice. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:R10524-R10527. [PMID: 9982722 DOI: 10.1103/physrevb.53.r10524] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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11
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Heinonen O, Johnson MD. Failure of the integer quantum Hall effect without dissipation. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:11230-11237. [PMID: 10009973 DOI: 10.1103/physrevb.49.11230] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Kloor H, Fischbach E, Talmadge C, Greene GL. Limits on new forces coexisting with electromagnetism. PHYSICAL REVIEW. D, PARTICLES AND FIELDS 1994; 49:2098-2113. [PMID: 10017194 DOI: 10.1103/physrevd.49.2098] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
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13
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Heinonen O. Deviations from perfect integer quantum Hall effect. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:1901-1904. [PMID: 10003853 DOI: 10.1103/physrevb.46.1901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Yoshihiro K, Cage ME, Yu D. Anomalous behavior of a quantized Hall plateau in a high-mobility Si metal-oxide-semiconductor field-effect transistor. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:14204-14214. [PMID: 10001545 DOI: 10.1103/physrevb.45.14204] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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