Conductance fluctuations in a ballistic metallic point contact

Effective Lorenz Number of the Point Contact between Silver Nanowires

Electrical and thermal transport through metal point contacts, a key issue in the design and operation of various engineering devices, is of great recent interest. The effective Lorenz number (L), which relates the thermal to electrical conductance of point contacts, could provide valuable information on the relative contribution of electrons and phonons to thermal transport. Through measuring electrical and thermal transport across point contacts between silver nanowires, we report that L significantly deviates from the Sommerfeld value by up to 5.2 times and exhibits nonmonotonic variation with temperature. Analyses show that these observations are due to the more important phonon contribution to the thermal conductance of the point contact as Sharvin resistance greatly hinders electron transport, which is further confirmed by the size dependence of L with a higher value for a smaller contact size. These results provide critical insights into engineering designs involving point contacts between metal nanostructures.

Observation of Strong Reflection of Electron Waves Exiting a Ballistic Channel at Low Energy

Wave scattering by a potential step is a ubiquitous concept. Thus, it is surprising that theoretical treatments of ballistic transport in nanoscale devices, from quantum point contacts to ballistic transistors, assume no reflection even when the potential step is encountered upon exiting the device. Experiments so far seem to support this even if it is not clear why. Here we report clear evidence of coherent reflection when electron wave exits the channel of a nanoscale transistor and when the electron energy is low. The observed behavior is well described by a simple rectangular potential barrier model which the Schrodinger's equation can be solved exactly. We can explain why reflection is not observed in most situations but cannot be ignored in some important situations. Our experiment also represents a direct measurement of electron injection velocity - a critical quantity in nanoscale transistors that is widely considered not measurable.

Emerging magnetic order in platinum atomic contacts and chains

The development of atomic-scale structures revealing novel transport phenomena is a major goal of nanotechnology. Examples include chains of atoms that form while stretching a transition metal contact or the predicted formation of magnetic order in these chains, the existence of which is still debated. Here we report an experimental study of the magneto-conductance (MC) and anisotropic MC with atomic-size contacts and mono-atomic chains of the nonmagnetic metal platinum. We find a pronounced and diverse MC behaviour, the amplitude and functional dependence change when stretching the contact by subatomic distances. These findings can be interpreted as a signature of local magnetic order in the chain, which may be of particular importance for the application of atomic-sized contacts in spintronic devices of the smallest possible size.

Magnetotransport in atomic-size bismuth contacts

We report low-temperature transport experiments on atomic-size contacts of bismuth that are fabricated using the mechanically controlled break-junction technique at low temperatures. We observe stable contacts with conductance values at fractions of one conductance quantum G0 = 2e(2)/h, as is expected for systems with long Fermi wavelength. We defer two preferred conductance scales: the lower one is in the order of 0.015 G0 and can be attributed to single-atom Bi contact, while the higher one amounts to 0.15 G0, as indicated by the appearance of multiples of this value in the conductance histogram. Rich magneto-transport behaviour with significant changes in the magneto-conductance is found in the whole conductance range. Although for the pristine samples and large contacts with G > 5 G0, indications for Shubnikov-de Haas oscillations are present, the smallest contacts show pronounced conductance fluctuations that decay rapidly when a magnetic field is applied. Moreover, large variations are observed when a finite bias voltage is applied. These findings are interpreted as the transition from the diffusive to the ballistic and the ultra-quantum regime when lowering the contact size.

Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions

We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.

Magnetic field symmetry and phase rigidity of the nonlinear conductance in a ring

We have performed nonlinear transport measurements as a function of a perpendicular magnetic field in a semiconductor Aharonov-Bohm ring connected to two leads. While the voltage-symmetric part of the conductance is symmetric in the magnetic field, the voltage-antisymmetric part of the conductance is not symmetric. These symmetry relations are compatible with the scattering theory for nonlinear mesoscopic transport. The observed asymmetry can be tuned continuously by changing the gate voltages near the arms of the ring, showing that the phase of the nonlinear conductance in a two-terminal interferometer is not rigid, in contrast with the case for the linear conductance.

Symmetry of two-terminal nonlinear electric conduction

The well-established symmetry relations for linear transport phenomena cannot, in general, be applied in the nonlinear regime. Here we propose a set of symmetry relations with respect to bias voltage and magnetic field for the nonlinear conductance of two-terminal electric conductors. We experimentally confirm these relations using phase-coherent, semiconductor quantum dots.