Exciton spin dynamics in GaAs heterostructures

Long-range transport of 2D excitons with acoustic waves

Excitons are elementary optical excitation in semiconductors. The ability to manipulate and transport these quasiparticles would enable excitonic circuits and devices for quantum photonic technologies. Recently, interlayer excitons in 2D semiconductors have emerged as a promising candidate for engineering excitonic devices due to their long lifetime, large exciton binding energy, and gate tunability. However, the charge-neutral nature of the excitons leads to weak response to the in-plane electric field and thus inhibits transport beyond the diffusion length. Here, we demonstrate the directional transport of interlayer excitons in bilayer WSe2 driven by the propagating potential traps induced by surface acoustic waves (SAW). We show that at 100 K, the SAW-driven excitonic transport is activated above a threshold acoustic power and reaches 20 μm, a distance at least ten times longer than the diffusion length and only limited by the device size. Temperature-dependent measurement reveals the transition from the diffusion-limited regime at low temperature to the acoustic field-driven regime at elevated temperature. Our work shows that acoustic waves are an effective, contact-free means to control exciton dynamics and transport, promising for realizing 2D materials-based excitonic devices such as exciton transistors, switches, and transducers up to room temperature.

Energy Tuning of Electronic Spin Coherent Evolution in Methylammonium Lead Iodide Perovskites

We investigated the coherent evolution of the electronic spin at low temperature in high-quality CH₃NH₃PbI₃ polycrystalline films by picosecond-resolved photoinduced Faraday rotation. We show that this coherent evolution can be tuned by choosing the pump-probe energy within the lowest optical-absorption band, and we explain it as the result of two main contributions: the localized electron and the localized hole. Their corresponding amplitude ratios are not constant across the lowest absorption band-an observation which disqualifies a free exciton from being at the origin of the electronic spin coherent evolution. We measured a spin coherence time of localized electrons (holes) of 4.4 ns (3.7 ns) at 1.635 eV, which evolves to about 7 ns at 1.612 eV (the hole coherence time remains almost constant at lower energies). Finally, we provide a global image of the spin coherent evolution in bulk metal halide perovskite, which overcomes recent controversies.

State of the Art and Prospects for Halide Perovskite Nanocrystals

Metal-halide perovskites have rapidly emerged as one of the most promising materials of the 21st century, with many exciting properties and great potential for a broad range of applications, from photovoltaics to optoelectronics and photocatalysis. The ease with which metal-halide perovskites can be synthesized in the form of brightly luminescent colloidal nanocrystals, as well as their tunable and intriguing optical and electronic properties, has attracted researchers from different disciplines of science and technology. In the last few years, there has been a significant progress in the shape-controlled synthesis of perovskite nanocrystals and understanding of their properties and applications. In this comprehensive review, researchers having expertise in different fields (chemistry, physics, and device engineering) of metal-halide perovskite nanocrystals have joined together to provide a state of the art overview and future prospects of metal-halide perovskite nanocrystal research.

Spin relaxation dynamics of holes in intrinsic GaAs quantum wells studied by transient circular dichromatic absorption spectroscopy at room temperature

Spin relaxation dynamics of holes in intrinsic GaAs quantum wells is studied using time-resolved circular dichromatic absorption spectroscopy at room temperature. It is found that ultrafast dynamics is dominated by the cooperative contributions of band filling and many-body effects. The relative contribution of the two effects is opposite in strength for electrons and holes. As a result, transient circular dichromatic differential transmission (TCD-DT) with co- and cross-circularly polarized pump and probe presents different strength at several picosecond delay time. Ultrafast spin relaxation dynamics of excited holes is sensitively reflected in TCD-DT with cross-circularly polarized pump and probe. A model, including coherent artifact, thermalization of nonthermal carriers and the cooperative contribution of band filling and many-body effects, is developed, and used to fit TCD-DT with cross-circularly polarized pump and probe. Spin relaxation time of holes is achieved as a function of excited hole density for the first time at room temperature, and increases with hole density, which disagrees with a theoretical prediction based on EY spin relaxation mechanism, implying that EY mechanism may be not dominant hole spin relaxation mechanism at room temperature, but DP mechanism is dominant possibly.

Long-term hole spin memory in the resonantly amplified spin coherence of InGaAs/GaAs quantum well electrons

Pulsed optical excitation of the negatively charged trion has been used to generate electron spin coherence in an n-doped (In,Ga)As/GaAs quantum well. The coherence is monitored by resonant spin amplification detected at times exceeding the trion lifetime by 2 orders of magnitude. Still, even then signatures of the hole spin dynamics in the trion complex are imprinted in the signal leading to an unusual batlike shape of the magnetic field dispersion of spin amplification. From this shape information about the spin relaxation of both electrons and holes can be derived.

A controllable spin prism

Based on Khodas et al (2004 Phys. Rev. Lett. 92 086602), we propose a device acting like a controllable prism for an incident spin. The device is a large quantum well where Rashba and Dresselhaus spin-orbit interactions are present and controlled by the plunger gate potential, the electric field and the barrier height. A totally destructive interference can be manipulated externally between the Rashba and Dresselhaus couplings. The spin-dependent transmission/reflection amplitudes are calculated as the control parameters are changed. The device operates as a spin prism/converter/filter in different regimes and may stimulate research in promising directions in spintronics in analogy with linear optics.

Mechanism and Origin of Exciton Spin Relaxation in CdSe Nanorods

The dynamics of exciton spin relaxation in CdSe nanorods of various sizes and shapes are measured by an ultrafast transient polarization grating technique. The measurement of the third-order transient grating (3-TG) signal utilizing linear cross-polarized pump pulses enables us to monitor the history of spin relaxation among the bright exciton states with a total angular momentum of F = +/-1. From the measured exciton spin relaxation dynamics, it is found that the effective mechanism of exciton spin relaxation is sensitive to the size of the nanorod. Most of the measured cross-polarized 3-TG signals show single-exponential spin relaxation dynamics, while biexponential spin relaxation dynamics are observed in the nanorod of the largest diameter. This analysis suggests that a direct exciton spin flip process between the bright exciton states with F = +/-1 is the dominant spin relaxation mechanism in small nanocrystals, and an indirect spin flip via the dark states with F = +/-2 contributes as the size of the nanocrystal increases. This idea is examined by simulations of 3-TG signals with a kinetic model for exciton spin relaxation considering the states in the exciton fine structure. Also, it is revealed that the rate of exciton spin relaxation has a strong correlation with the diameter, d, of the nanorod, scaled by the power law of 1/d4, rather than other shape parameters such as length, volume, or aspect ratio.

Spin relaxation in the presence of electron-electron interactions

The D'yakonov-Perel' spin relaxation induced by the spin-orbit interaction is examined in disordered two-dimensional electron gas. It is shown that, because of the electron-electron interactions, substantially different spin relaxation rates may be observed depending on the technique used to extract them. It is demonstrated that the relaxation rate of a spin population is proportional to the spin-diffusion constant D(s), while the spin-orbit scattering rate controlling the weak-localization corrections is proportional to the diffusion constant D, i.e., the conductivity. The two diffusion constants get strongly renormalized by the electron-electron interactions, but in different ways. As a result, the corresponding relaxation rates are different, with the difference between the two being especially strong near a magnetic instability or near the metal-insulator transition.

Observation of spin Coulomb drag in a two-dimensional electron gas

An electron propagating through a solid carries spin angular momentum in addition to its mass and charge. Of late there has been considerable interest in developing electronic devices based on the transport of spin that offer potential advantages in dissipation, size and speed over charge-based devices. However, these advantages bring with them additional complexity. Because each electron carries a single, fixed value (- e) of charge, the electrical current carried by a gas of electrons is simply proportional to its total momentum. A fundamental consequence is that the charge current is not affected by interactions that conserve total momentum, notably collisions among the electrons themselves. In contrast, the electron's spin along a given spatial direction can take on two values, +/- [planck]/2 (conventionally upward arrow, downward arrow), so that the spin current and momentum need not be proportional. Although the transport of spin polarization is not protected by momentum conservation, it has been widely assumed that, like the charge current, spin current is unaffected by electron-electron (e-e) interactions. Here we demonstrate experimentally not only that this assumption is invalid, but also that over a broad range of temperature and electron density, the flow of spin polarization in a two-dimensional gas of electrons is controlled by the rate of e-e collisions.

Goldstone-mode relaxation in a quantized Hall ferromagnet

We report on a study of the spin relaxation of a strongly correlated two-dimensional electron gas in the nu=2kappa+1 quantum Hall regime. As the initial state we consider a coherent deviation of the spin system from the B direction and investigate a breakdown of this Goldstone-mode (GM) state due to the spin-orbit coupling and smooth disorder. The relaxation is considered in terms of annihilation processes in the system of spin waves. The problem is solved at an arbitrary value of the deviation. We predict that the GM relaxation occurs nonexponentially with time.

Electrical detection of spin accumulation in a p-type GaAs quantum well

We report on experiments in which a spin-polarized current is injected from a GaMnAs ferromagnetic electrode into a GaAs layer through an AlAs barrier. The resulting spin polarization in GaAs is detected by measuring how the tunneling current, to a second GaMnAs ferromagnetic electrode, depends on the orientation of its magnetization. Our results can be accounted for by sequential tunneling with the nonrelaxed spin splitting of the chemical potential, that is, spin accumulation, in GaAs. We discuss the conditions on the hole spin relaxation time in GaAs that are required to obtain the large effects we observe.

Spin-sensitive bleaching and monopolar spin orientation in quantum wells

Spin-sensitive bleaching of the absorption of far-infrared radiation has been observed in p-type GaAs/AlGaAs quantum well structures. The absorption of circularly polarized radiation saturates at lower intensities than that of linearly polarized light due to monopolar spin orientation in the first heavy-hole subband. Spin relaxation times of holes in p-type material in the range of tens of ps were derived from the intensity dependence of the absorption.

Photon beats from a single semiconductor quantum dot

Single-photon interference is observed on the ultranarrow long-term stable exciton resonance of an individual semiconductor quantum dot. This interference is related to the fine-structure splitting and allows direct conclusions about the coherence properties of the exciton. When selectively addressing a particular dot by quasiresonant phonon-assisted excitation, despite a rapid orientation relaxation on a 1-ps time scale, coherence is partly maintained. No significant further decoherence occurs when the ground state is reached until the exciton recombines radiatively (approximately 300 ps).

Gateable suppression of spin relaxation in semiconductors

The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing favors spin preservation in the maximally scattered but nonlocalized electronic states. This implies that the spin-relaxation rate can be both tuned in situ and specifically engineered in appropriate device geometries.