Leturcq R, L'Hôte D, Tourbot R, Mellor CJ, Henini M. Resistance noise scaling in a dilute two-dimensional hole system in GaAs.
PHYSICAL REVIEW LETTERS 2003;
90:076402. [PMID:
12633254 DOI:
10.1103/physrevlett.90.076402]
[Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2002] [Indexed: 05/24/2023]
Abstract
We have measured the resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power S(R)/R(2) increases strongly when the hole density p(s) is decreased, increases slightly with temperature (T) at the largest densities, and decreases strongly with T at low p(s). The noise scales with the resistance, S(R)/R(2) approximately R2.4, as for a second order phase transition such as a percolation transition. The p(s) dependence of the conductivity is consistent with a critical behavior for such a transition, near a density p(*) which is lower than the observed MIT critical density p(c).
Collapse