Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures

High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Due to the intrinsic spontaneous and piezoelectric polarization effect, III-nitride semiconductor heterostructures are promising candidates for generating 2D electron gas (2DEG) system. Among III-nitrides, InN is predicted to be the best conductive-channel material because its electrons have the smallest effective mass and it exhibits large band offsets at the heterointerface of GaN/InN or AlN/InN. Until now, that prediction has remained theoretical, due to a giant gap between the optimal growth windows of InN and GaN, and the difficult epitaxial growth of InN in general. The experimental realization of 2DEG at an InGaN/InN heterointerface grown by molecular beam epitaxy is reported here. The directly probed electron mobility and the sheet electron density of the InGaN/InN heterostructure are determined by Hall-effect measurements at room temperature to be 2.29 × 103 cm2 V-1 s-1 and 2.14 × 1013 cm-2, respectively, including contribution from the InN bottom layer. The Shubnikov-de Haas results at 3 K confirm that the 2DEG has an electron density of 3.30 × 1012 cm-2 and a quantum mobility of 1.48 × 103 cm2 V-1 s-1. The experimental observations of 2DEG at the InGaN/InN heterointerface have paved the way for fabricating higher-speed transistors based on an InN channel.

Visualizing short-range charge transfer at the interfaces between ferromagnetic and superconducting oxides

The interplay between antagonistic superconductivity and ferromagnetism has been a interesting playground to explore the interaction between competing ground states. Although this effect in systems of conventional superconductors is better understood, the framework of the proximity effect at complex-oxide-based superconductor/ferromagnet interfaces is not so clear. The main difficulty originates from the lack of experimental tools capable of probing the interfaces directly with high spatial resolution. Here we harness cross-sectional scanning tunnelling microscopy and spectroscopy together with atomic-resolution electron microscopy to understand the buried interfaces between cuprate and manganite layers. The results show that the fundamental length scale of the electronic evolution between YBa2Cu3O(7-δ) (YBCO) and La2/3Ca1/3MnO3 (LCMO) is confined to the subnanometre range. Our findings provide a complete and direct microscopic picture of the electronic transition across the YBCO/LCMO interfaces, which is an important step towards understanding the competition between ferromagnetism and superconductivity in complex-oxide heterostructures.