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For: Yu BD, Oshiyama A. Dimer exchange mechanism for substitutional As adsorption on Si(100). Phys Rev Lett 1993;71:585-588. [PMID: 10055313 DOI: 10.1103/physrevlett.71.585] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Number Cited by Other Article(s)
1
Radny MW, Smith PV, Reusch TCG, Warschkow O, Marks NA, Shi HQ, McKenzie DR, Schofield SR, Curson NJ, Simmons MY. Single P and As dopants in the Si(001) surface. J Chem Phys 2007;127:184706. [DOI: 10.1063/1.2786991] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]  Open
2
Grandjean N, Massies J. Kinetics of surfactant-mediated epitaxy of III-V semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:R13231-R13234. [PMID: 9983154 DOI: 10.1103/physrevb.53.r13231] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
3
Yu BD, Oshiyama A. Structures and reactions of missing dimers in epitaxial growth of Ge on Si(100). PHYSICAL REVIEW. B, CONDENSED MATTER 1995;52:8337-8343. [PMID: 9979835 DOI: 10.1103/physrevb.52.8337] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Ide T. Formation of step structures by As deposition on a double-domain Si(001) substrate. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:1722-1728. [PMID: 9978892 DOI: 10.1103/physrevb.51.1722] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
5
Oshiyama A. Structures of steps and appearances of {311} facets on Si(100) surfaces. PHYSICAL REVIEW LETTERS 1995;74:130-133. [PMID: 10057716 DOI: 10.1103/physrevlett.74.130] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
6
Yu BD, Ide T, Oshiyama A. Scanning-tunneling-microscopy images of Ge adsorbed on an As-covered Si(001) surface. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;50:14631-14634. [PMID: 9975696 DOI: 10.1103/physrevb.50.14631] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
7
Theory of adsorption: Ordered monolayers from Na to Cl on Si(001) and Ge(001). ACTA ACUST UNITED AC 1994. [DOI: 10.1007/bf00348267] [Citation(s) in RCA: 39] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
8
Yu BD, Oshiyama A. Reaction pathway for Sb-dimer rotation in conversion of Sb4 precursors on Si(001). PHYSICAL REVIEW. B, CONDENSED MATTER 1994;50:8942-8945. [PMID: 9974933 DOI: 10.1103/physrevb.50.8942] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
9
Wang Y, Chen X, Hamers RJ. Atomic-resolution study of overlayer formation and interfacial mixing in the interaction of phosphorus with Si(001). PHYSICAL REVIEW. B, CONDENSED MATTER 1994;50:4534-4547. [PMID: 9976757 DOI: 10.1103/physrevb.50.4534] [Citation(s) in RCA: 30] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
10
Saito M, Oshiyama A. Resonant bonds in symmetry-lowering distortion around a Si divacancy. PHYSICAL REVIEW LETTERS 1994;73:866-869. [PMID: 10057559 DOI: 10.1103/physrevlett.73.866] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
11
Yu BD, Oshiyama A. Diffusion and dimer exchange in surfactant-mediated epitaxial growth. PHYSICAL REVIEW LETTERS 1994;72:3190-3193. [PMID: 10056130 DOI: 10.1103/physrevlett.72.3190] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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