• Reference Citation Analysis
  • v
  • v
  • Find an Article
Find an Article PDF (4594883)   Today's Articles (36)   Subscriber (49330)
For: Nickel NH, Johnson NM. Hydrogen-induced metastable changes in the electrical conductivity of polycrystalline silicon. Phys Rev Lett 1994;72:3393-3396. [PMID: 10056187 DOI: 10.1103/physrevlett.72.3393] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Number Cited by Other Article(s)
1
Zhou X, Watkins GD, Messmer RP, Chawla S. Hydrogen-related defects in polycrystalline CVD diamond. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:7881-7890. [PMID: 9984463 DOI: 10.1103/physrevb.54.7881] [Citation(s) in RCA: 36] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
2
Stretched-exponential relaxation modeled without invoking statistical distributions. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:11292-11295. [PMID: 9982734 DOI: 10.1103/physrevb.53.11292] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
3
Nickel NH, Jackson WB, Walker J. Hydrogen migration in polycrystalline silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:7750-7761. [PMID: 9982221 DOI: 10.1103/physrevb.53.7750] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Nickel NH, Johnson NM, Walker J. Hydrogen-induced generation of acceptorlike defects in polycrystalline silicon. PHYSICAL REVIEW LETTERS 1995;75:3720-3723. [PMID: 10059710 DOI: 10.1103/physrevlett.75.3720] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
5
Nickel NH. Energetics of bond-centered hydrogen in strained Si-Si bonds. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:2636-2639. [PMID: 9979032 DOI: 10.1103/physrevb.51.2636] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
PrevPage 1 of 1 1Next
© 2004-2024 Baishideng Publishing Group Inc. All rights reserved. 7041 Koll Center Parkway, Suite 160, Pleasanton, CA 94566, USA