Negative electron affinity and low work function surface: Cesium on oxygenated diamond (100)

Degradation of Perfluorooctanoic Acid with Hydrated Electron by a Heterogeneous Catalytic System

Hydrated electron (e_aq^-)-induced reduction protocols have bright prospects for the decomposition of recalcitrant organic pollutants. However, traditional e_aq^- production involves homogeneous sulfite photolysis, which has a pH-dependent reaction activity and might have potential secondary pollution risks. In this study, a heterogeneous UV/diamond catalytic system was proposed to decompose of a typical persistent organic pollutant, perfluorooctanoic acid (PFOA). In contrast to the rate constant of the advanced reduction process (ARP) of a UV/SO₃^2-, the k_obs of PFOA decomposition in the UV/diamond system showed only minor pH dependence, ranging from 0.01823 ± 0.0014 min^-1 to 0.02208 ± 0.0013 min^-1 (pH 2 to pH 11). As suggested by the electron affinity (EA) and electron configuration of the diamond catalyst, the diamond catalyst yields facile energetic photogenerated electron emission into water without a high energy barrier after photoexcitation, thus inducing e_aq^- production. The impact of radical scavengers, electron spin resonance (ESR), and transient absorption (TA) measurements verified the formation of e_aq^- in the UV/diamond system. The investigation of diamond for ejection of energetic photoelectrons into a water matrix represents a new paradigm for ARPs and would facilitate future applications of heterogeneous catalytic processes for efficient recalcitrant pollutant removal by e_aq^-.

Single-step fabrication and work function engineering of Langmuir-Blodgett assembled few-layer graphene films with Li and Au salts

To implement large-area solution-processed graphene films in low-cost transparent conductor applications, it is necessary to have the control over the work function (WF) of the film. In this study we demonstrate a straightforward single-step chemical approach for modulating the work function of graphene films. In our approach, chemical doping of the film is introduced at the moment of its formation. The films are self-assembled from liquid-phase exfoliated few-layer graphene sheet dispersions by Langmuir-Blodgett technique at the water-air interfaces. To achieve a single-step chemical doping, metal standard solutions are introduced instead of water. Li standard solutions (LiCl, LiNO3, Li2CO3) were used as n-dopant, and gold standard solution, H(AuCl4), as p-dopant. Li based salts decrease the work function, while Au based salts increase the work function of the entire film. The maximal doping in both directions yields a significant range of around 0.7 eV for the work function modulation. In all cases when Li-based salts are introduced, electrical properties of the film deteriorate. Further, lithium nitrate (LiNO3) was selected as the best choice for n-type doping since it provides the largest work function modulation (by 400 meV), and the least influence on the electrical properties of the film.

Versatile and Tunable Electrical Properties of Doped Nonoxidized Graphene Using Alkali Metal Chlorides

With the rapid development of wearable and flexible electronics, graphene has been intensively studied for the transparent, hole transport electrode layer (HTL) of field-effect transistors, light-emitting diodes, and organic photovoltaic (OPV) cells. To modulate the sheet resistance and the work function of graphene as a HTL, the surface doping is versatile while retaining high transparency. In this work, we used a chemical doping method to control the charge carrier density, band gap, and work function of graphene with minimizing the damage of the carbon network, for which metal chlorides (NaCl, KCl, and AuCl₃) were used as chemical dopants. The high-quality graphene flakes were synthesized with large lateral sizes of more than 5 μm using ternary graphite intercalation compounds. Interestingly, the AuCl₃-doped graphene flake film with a film thickness of about 20 nm showed the lowest reported sheet resistance of ∼249 Ω/sq with ∼75% transmittance. Furthermore, it could control the work function from 4.32 to 5.1 eV. The interfacial dipole complexes of metal cations with a low work function and the reactive radicals such as -OH were discussed to explain this result. For the practical application, an OPV device using the AuCl₃-doped graphene flake film as the HTL was fabricated and it demonstrated enhanced power conversion efficiency while maintaining high optical transparency in visible light.

Boron-oxygen complex yields n-type surface layer in semiconducting diamond

Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits development of an effective n-type dopant with satisfactory electrical properties. Here we report the synthesis of n-type diamond, containing boron (B) and oxygen (O) complex defects. We obtain high carrier concentration (∼0.778 × 10²¹ cm^-3) several orders of magnitude greater than previously obtained with sulfur or phosphorous, accompanied by high electrical conductivity. In high-pressure high-temperature (HPHT) boron-doped diamond single crystal we formed a boron-rich layer ∼1-1.5 μm thick in the {111} surface containing up to 1.4 atomic % B. We show that under certain HPHT conditions the boron dopants combine with oxygen defects to form B-O complexes that can be tuned by controlling the experimental parameters for diamond crystallization, thus giving rise to n-type conduction. First-principles calculations indicate that B₃O and B₄O complexes with low formation energies exhibit shallow donor levels, elucidating the mechanism of the n-type semiconducting behavior.

Effective work function modulation of graphene/carbon nanotube composite films as transparent cathodes for organic optoelectronics

In this study, we found that the work functions (Φ(w)) of solution-processable, functional graphene/carbon nanotube-based transparent conductors were readily manipulated, varying between 5.1 and 3.4 eV, depending on the nature of the doping alkali carbonate salt. We used the graphene-based electrodes possessing lower values of Φ(w) as cathodes in inverted-architecture polymer photovoltaic devices to effectively collect electrons, giving rise to an optimal power conversion efficiency of 1.27%.

(Negative) Electron Affinity of AlN and AlGaN Alloys

The electron affinity of a semiconductor defines the relationship of the vacuum level and the semiconductor band structure. It is dependent on the atomic orbitals of the material and the surface termination. We report experimental and theoretical results that support the presence of a negative electron affinity on AlN and the Al rich AlGaN alloys. The GaN surface is found to exhibit a (positive) electron affinity of 3.3eV. The experimental measurements employ UV-photoemission spectroscopy on in situ gas-source MBE samples and on CVD samples. Theoretical results indicate that the (negative) electron affinity of AlN depends sensitively on the surface reconstruction and adatom termination. The experimental dependence of the electron affinity on alloy concentration is presented. The results indicate that AlGaN alloys with band gap similar or greater than that of diamond will exhibit a negative electron affinity. Field emission results are reported, and the characteristics are similar to those obtained from a diamond film. Issues related to cold cathode electronic devices based on NEA surfaces are noted.

Photoelectron Emission from the Cesiated Diamond (110) Surface

Cesiation of type IIB diamond (110) crystals was studied using a combination of ultraviolet photoemission spectroscopy, x-ray photoemission spectroscopy, and low energy electron diffraction. The diamond (110) crystal was hydrogen treated by exposure to a hydrogen microwave discharge. Although cesium was largely unreactive with the hydrogenated diamond surface, cesiation yielded a large enhancement in the secondary electron yield of the diamond surface and the negative electron affinity (NEA) condition. An increase in the downwards band bending of approximately 0.75-0.9 eV was inferred from the shift in the valence band edge following cesiation. In addition, (lx 1) LEED patterns were observed at all cesium coverages. Exposure of the cesiated diamond surface to molecular oxygen significantly reduced the NEA peak (relative to the secondary electron background); however, recovery of the NEA peak was observed when the molecular oxygen source was removed.

Density Functional Theory Investigation of Product Distribution following Reaction of Acrylonitrile on Diamond (001)-2×1 Surface

The reaction of acrylonitrile with the C(001)-2 x 1 surface has been investigated by employing density functional cluster model calculations. The calculations revealed eight possible reaction pathways for acrylonitrile with the surface dimer. Full geometry optimized structures were obtained for all adducts, including intra- and interdimer reaction products. These results were analyzed in terms of both the total energy values and the detailed optimized geometries. We find that the reaction of acrylonitrile with the diamond (001) surface occurs primarily through its nonpolar C=C group and the intradimer [2+2](cc) product is the dominant product. All these results are in good agreement with the experimental work by Schwartz. It is noteworthy that the isomerization process plays an important role in the chemisorption process. Both intradimer [4+2] product and interdimer [2+2](cc) product can isomerize to the intradimer [2+2](cc) product. The present study shows that the isomerization between intradimer [4+2] product and intradimer [2+2](cc) product is slightly favorable over the direct path to formation of the intradimer [2+2](cc) product.

Organic functionalization of diamond (100) by addition reactions of carbene, silylene, and germylene: a theoretical prediction

We present a theoretical prediction of the facile cycloadditions of carbene, silylene, and germylene onto the diamond (100) surface, a new type of surface reaction that can be employed to functionalize diamond surface at low temperature. This finding renders the plausibility that the diamond surface can be chemically modified by the well-known carbene addition chemistry, which might introduce new functionalities to the diamond surface for novel applications in a diversity of fields.

Role of the dopant in the superconductivity of diamond

We present an ab initio study of the recently discovered superconductivity of boron doped diamond within the framework of a phonon-mediated pairing mechanism. The role of the dopant, in substitutional position, is unconventional in that half of the coupling parameter lambda originates in strongly localized defect-related vibrational modes, yielding a very peaked Eliashberg alpha2F(omega) function. The electron-phonon coupling potential is found to be extremely large, and T(C) is limited by the low value of the density of states at the Fermi level. The effect of boron isotope substitution is explored.

A DFT study of the 1,3-dipolar cycloadditions on the C(100)-2 x 1 surface

The 1,3-dipolar cycloadditions (1,3-DCs) of a series of 1,3-dipolar molecules onto the C(100)-2 x 1 surface have been investigated by means of hybrid density functional B3LYP method in combination with cluster model approach. It was found that 1,3-DCs on the C(100)-2 x 1 surface are more favorable over their molecular analogues both thermodynamically and kinetically. The enhancement of the reactivity on the surface due to the reduced overlap between the p(pi) orbitals of the surface C=C dimer should be important for the semiconductor industry because it might lead to a breakthrough in the fabrication of diamond films at low temperature.