Ab initio studies of the diffusion barriers at single-height Si(100) steps

Understanding the Different Diffusion Mechanisms of Hydrated Protons and Potassium Ions in Titanium Carbide MXene

The high intercalation capacitance of MXenes is attractive, but their performance as electrodes in supercapacitors is limited by mass transport when increasing the thickness and mass loading of the electrodes. Here, we report a combined experimental and computational study, through which we reveal the diffusion of hydrated ionic species at the interlayer spaces. We find that the cyclic voltammetry (CV) curves for the delaminated Ti₃C₂T _x exhibit distinct features in acid (H₂SO₄) and alkaline (KOH) electrolytes. The calculated migration profiles of K⁺ and H⁺ using density functional theory, in the presence and absence of water, suggest that the intercalated water molecules stabilize the charged ions, facilitating their diffusion from two dimension to three dimension manifested by reduced activation barriers and movement pathways. In addition, we show that the diffusion of low and high concentrations of protons is significantly different; that is, protons of high concentrations can be adsorbed at both sides of the interlayer spaces, and water drives frequent proton hopping between stable adsorption sites as shown in the ab initio molecular dynamics simulations. The calculations can thus explain the varied capacitance and distorted CV curves when the experiments are conducted in acid and alkaline electrolytes. These results can provide guidance for improving the fast transport of ions and electrons in MXenes with high mass loading.

Phase-field method for epitaxial kinetics on surfaces

We present a procedure for simulating epitaxial growth based on the phase-field method. We consider a basic model in which growth is initiated by a flux of atoms onto a heated surface. The deposited atoms diffuse in the presence of this flux and eventually collide to form islands which grow and decay by the attachment and detachment of migrating atoms at their edges. Our implementation of the phase-field method for this model includes uniform deposition, isotropic surface diffusion, and stochastic nucleation (in both space and time), which creates islands whose boundaries evolve as the surface atoms "condense" into and "evaporate" from the islands. Computations using this model in the submonolayer regime, prior to any appreciable coalescence of islands, agree with the results of kinetic Monte Carlo (KMC) simulations for the coverage-dependence of adatom and island densities and island-size distributions, for both reversible and irreversible growth. The scaling of the island density, as obtained from homogeneous rate equations, agrees with KMC simulations for irreversible growth and for reversible growth for varying deposition flux at constant temperature. For reversible growth with varying temperature but constant flux, agreement relies on an estimate of the formation energy of the critical cluster. Taken together, our results provide a comprehensive analysis of the phase-field method in the submonolayer regime of epitaxial growth, including the verification of the main scaling laws for adatoms and island densities and the scaling functions for island-size distributions, and point to the areas where the method can be extended and improved.

Simulations of SI(100) Growth: Step Flow and Low Temperature Growth

We have investigated Si (100) homoepitaxy in variety of different temperature regimes. In the high temperature step flow regime, the growth properties of the different steps play an important role. The binding sites and diffusion barriers for a Si adatom moving over the buckled Si(100) surface and single-height steps were investigated with the ab initio Car-Parrinello scheme. The SA step edge was found to be a relatively poor sink for adatoms. By contrast, growth takes place much more rapidly at the SB step edges, so that one can understand the relatively fast growth observed at the ends of dimer rows. We have also investigated Si(100) homoepitaxy with classical molecular dynamics simulations at very low temperatures, where typically an amorphous deposit forms. By tuning the energy of the incoming atomic beams, one can lower the temperature of the amorphous to crystalline transition considerably and thereby enhance epitaxial growth.

Properties of one-dimensional molybdenum nanowires in a confined environment

The atomistic mechanism for the self-assembly of molybdenum into one-dimensional metallic nanowires in a confined environment such as a carbon nanotube is investigated using quantum mechanical calculations. We find that Mo does not organize into linear chains but rather prefers to form four atom per unit cell nanowires that consist of a subunit of a Mo body-centered cubic crystal. Our model explains the 0.3 nm separation between features measured by high-resolution transmission electron microscopy and why the nanotube diameter must be in the 0.70-1.0 nm range to accommodate the smallest stable one-dimensional wire. We also computed the electronic band structure of the Mo wires inside a nanotube and found significant hybridization with the nanotube states, thereby explaining the experimentally observed quenching of fluorescence and the damping of the radial breathing modes as well as an increased resistance to oxidation.

Formation mechanism of one-dimensional Si islands on a H/Si(001) surface

The formation mechanism of one-dimensional Si islands on a H/Si(001)-(2x1) surface is studied using scanning tunneling microscopy/spectroscopy and first-principles calculations. We observed that one-dimensional islands that are made from dimer chains are formed at the initial growth stages similar to the bare Si(001) surface. It is found that the number of odd-numbered dimer chains is larger than that of even-numbered dimer chains. We propose the growth processes of the two types of growth edges to explain the observation.

Solid-State Composite Electrolyte LiI/3-Hydroxypropionitrile/SiO2 for Dye-Sensitized Solar Cells

A new compound, LiI(3-hydroxypropionitrile)(2), is reported here. According to its single-crystal structure (C2/c), this compound has 3-D transporting paths for iodine. Further ab initio calculation shows that the activation energy for diffusion of iodine (0.73 eV) is much lower than that of lithium ion (8.39 eV) within the lattice. Such a mono-ion transport feature is favorable as solid electrolyte to replace conventional volatile organic liquid electrolytes used in dye-sensitized solar cells (DSSC). LiI and 3-hydroxypropionitrile (HPN) can form a series of solid electrolytes. The highest ambient conductivity is 1.4 x 10(-)(3) S/cm achieved for LiI(HPN)(4). However, it tends to form large crystallites and leads to poor filling and contact within porous TiO(2) electrodes in DSSC. Such a drawback can be greatly improved by introducing micrometer-sized and nanosized SiO(2) particles into the solid electrolyte. It is helpful not only in enhancing the conductivity but also in improving the interfacial contact greatly. Consequently, the light-to-electricity conversion efficiency of 5.4% of a DSSC using LiI(HPN)(4)/15 wt % nano-SiO(2) was achieved under AM 1.5 simulated solar light illumination. Due to the low cost, easy fabrication, and relatively high conversion efficiency, the DSSC based on this new solid-state composite electrolyte is promising for practical applications.

Adatom ascending at step edges and faceting on fcc metal (110) surfaces

Using first-principles total-energy calculations, we show that an adatom can easily climb up at monatomic-layer-high steps on several representative fcc metal (110) surfaces via a place exchange mechanism. Inclusion of such novel adatom ascending processes in kinetic Monte Carlo simulations of Al(110) homoepitaxy as a prototypical model system can lead to the existence of an intriguing faceting instability, whose dynamical evolution and kinetic nature are explored in comparison with experimental observations.

Surface segregation of Ge at SiGe(001) by concerted exchange pathways

The segregation of Ge during growth on SiGe(001) surfaces was investigated by ab initio calculations. Four processes involving adatoms rather than ad-dimers were considered. The two most efficient channels proceed by the concerted exchange mechanism and involve a swap between an incorporated Ge and a Si adatom, or between Si and Ge in the first and the second surface layers, respectively. The calculated activation energies of approximately 1.5 eV explain well the high-temperature experimental data. Segregation mechanisms involving step edges are much less efficient.

Ab initio investigations of lithium diffusion in carbon nanotube systems

Li-nanotube systems can substantially improve the capacity of Li-ion batteries by utilizing both nanotube exteriors and interiors. Our ab initio simulations show that while Li motion through the sidewalls is forbidden, Li ions can enter tubes through topological defects containing at least nine-sided rings, or through the ends of open-ended nanotubes. Once inside, their motion is not diffusion limited. These results suggest that "damaging" nanotube ropes by either chemical or mechanical means will yield superior material for electrochemical storage.

Adatom pairing structures for Ge on si(100): the initial stage of island formation

With the use of scanning tunneling microscopy, it is shown that germanium atoms adsorbed on the (100) surface of silicon near room temperature form chainlike structures that are tilted from the substrate dimer bond direction and that consist of two-atom units arranged in adjoining substrate troughs. These units are distinctly different from surface dimers. They may provide the link missing in our understanding of the elementary processes in epitaxial film growth: the step between monomer adsorption and the initial formation of two-dimensional growth islands.

AN ATOMISTIC VIEW OF Si(001) HOMOEPITAXY

▪ Abstract  Growth of thin films from atoms deposited from the gas phase is intrinsically a non-equilibrium phenomenon dictated by a competition between kinetics and thermodynamics. Precise control of the growth becomes possible only after achieving an understanding of this competition. In this review, we present an atomistic view of the various kinetic aspects in a model system, the epitaxy of Si on Si(001), as revealed by scanning tunneling microscopy and total-energy calculations. Fundamentally important issues investigated include adsorption dynamics and energetics, adatom diffusion, nucleation, sticking, and detachment. We also briefly discuss the inverse process of growth, removal by sputtering or etching. We aim our discussions to an understanding at a quantitative level whenever possible.