Hall resistance in the Hopping regime: A "Hall insulator"?

Self-duality and a Hall-insulator phase near the superconductor-to-insulator transition in indium-oxide films

We combine measurements of the longitudinal (ρxx) and Hall (ρxy) resistivities of disordered 2D amorphous indium-oxide films to study the magnetic-field tuned superconductor-to-insulator transition (H-SIT) in the T --> 0 limit. At the critical field, Hc, the full resistivity tensor is T independent with ρxx(Hc) = h/4e(2) and ρxy(Hc) = 0 within experimental uncertainty in all films (i.e., these appear to be "universal" values); this is strongly suggestive that there is a particle-vortex self-duality at H = Hc. The transition separates the (presumably) superconducting state at H < Hc from a "Hall-insulator" phase in which ρxx --> ∞ as T --> 0 whereas ρxy approaches a nonzero value smaller than its "classical value" H/nec; i.e., 0 < ρxy < H/nec. A still higher characteristic magnetic field, Hc* > Hc, at which the Hall resistance is T independent and roughly equal to its classical value, ρxy ≈ H/nec, marks an additional crossover to a high-field regime (probably to a Fermi insulator) in which ρxy > H/nec and possibly diverges as T --> 0. We also highlight a profound analogy between the H-SIT and quantum-Hall liquid-to-insulator transitions (QHIT).

Orbital ac spin-Hall effect in the hopping regime

The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field E(omega) generates a spin-polarization current, normal to E, due to interference of hopping paths. At zero temperature the corresponding spin-Hall conductivity is real and is proportional to omega2. At nonzero temperatures the coupling to the phonons yields an imaginary term proportional to omega. The interference also yields persistent spin currents at thermal equilibrium, at E=0. The contributions from the Dresselhaus and Rashba interactions to the interference oppose each other.

Anomalous Hall effect in ferromagnetic semiconductors in the hopping transport regime

We present a theory of the anomalous Hall effect in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of the anomalous Hall conductivity in this system can be attributed to a phase that a hole gains when hopping around closed-loop paths in the presence of spin-orbit interactions and background magnetization of the localized Mn moments. Mapping the problem to a random resistor network, we derive an analytic expression for the macroscopic anomalous Hall conductivity sigma(AH)(xy). We show that sigma(AH)(xy) is proportional to the first derivative of the density of states varrho(epsilon) and thus can be expected to change sign as a function of impurity band filling. We also show that sigma(AH)(xy) depends on temperature as the longitudinal conductivity sigma(xx) within logarithmic accuracy.

Magnetotransport in manganites and the role of quantal phases: theory and experiment

While low-temperature Hall resisitivity rhoxy of La2/3(Ca,Pb)1/3MnO3 single crystals can be separated into ordinary (OHE) and anomalous (AHE) contributions, no such decomposition is possible near the Curie temperature Tc. Rather, the rhoxy data collapse to a single function of the reduced magnetization m=M/Msat, with an extremum at approximately 0.4 m. A new mechanism for the AHE in the inelastic hopping regime is identified that reproduces the scaling curve. An extension of Holstein's model for the hopping OHE, the mechanism arises from the combined effects of the double-exchange-induced quantal phase in triads of Mn ions and spin-orbit interactions.