Identification of the Native Vacancy Defects in Both Sublattices of ZnSx Se1-x by Positron Annihilation

Study of colloidal quantum-dot surfaces using an innovative thin-film positron 2D-ACAR method

Nanosized inorganic particles are of great interest because their electronic properties can be easily tailored, providing a tremendous potential for applications in optoelectronic devices, light-emitting diodes, solar cells and hydrogen storage. Confinement of electrons and holes to dimensions comparable to their wavelength leads to quantum-well states with modified wavefunctions and density of states. Surface phenomena are crucial in determining nanoparticle properties in view of their large surface-to-volume ratio. Despite a wealth of information, many fundamental questions about the nature of the surface and its relationship with the electronic structure remain unsolved. Ab initio calculations on CdSe nanocrystals suggest that passivating the ligands does not produce the ideal wurtzite structure and that Se atoms relax outwards irrespective of passivation. Here we show that implanted positrons are trapped at the surface of CdSe nanocrystals. They annihilate mostly with the Se electrons, monitor changes in composition and structure of the surface while hardly sensing the ligand molecules, and we thus unambiguously confirm the predicted strong surface relaxation.

Formation of thermal vacancies on the Si sublattice of the intermetallic compound MoSi2

For a detailed understanding of high-temperature processes in complex solids the identification of the sublattice on which thermal defects are formed is of basic interest. Theoretical studies in intermetallic compounds favor a particular sublattice for thermal vacancy formation. In the present study we detect in ordered MoSi2 thermal vacancies with a low formation enthalpy of H(F)(V)=(1.6+/-0.1) eV, and we succeed in showing by experimental and theoretical efforts that they are preferentially formed on the Si sublattice. By these data self-diffusion in MoSi2 can be understood.

Identification of lattice vacancies on the two sublattices of SiC

The identification of atomic defects in solids is of pivotal interest for understanding atomistic processes and solid state properties. Here we report on the exemplary identification of vacancies on each of the two sublattices of SiC by making use of (i) electron irradiation, (ii) measurements of the positron lifetimes, (iii) coincident Doppler broadening studies of the positron-electron annihilation radiation, and (iv) a comparison of the experimental data with theoretical studies. After 0.3 MeV electron irradiation, carbon vacancies V(C) are identified, where, after 0.5 MeV electron irradiation, predomi-nantly silicon vacancies V(Si) are observed. After 2.5 MeV irradiation, divacancies V(Si)-V(Si) are detected. The present results are expected to be of general importance for reliable identification of defects and atomic processes in complex solids.