CP Violation and Flavor Changing Effects in K and B Mesons from Nonuniversal Soft Breaking Terms

Scaling properties of monolayer graphene away from the Dirac point

The statistical properties of the carrier density profile of graphene in the ground state in the presence of particle-particle interaction and random charged impurity in zero gate voltage has been recently obtained by Najafi et al. [Phys. Rev. E 95, 032112 (2017)2470-004510.1103/PhysRevE.95.032112]. The nonzero chemical potential (μ) in gated graphene has nontrivial effects on electron-hole puddles, since it generates mass in the Dirac action and destroys the scaling behaviors of the effective Thomas-Fermi-Dirac theory. We provide detailed analysis on the resulting spatially inhomogeneous system in the framework of the Thomas-Fermi-Dirac theory for the Gaussian (white noise) disorder potential. We show that the chemical potential in this system as a random surface destroys the self-similarity, and also the charge field is non-Gaussian. We find that the two-body correlation functions are factorized to two terms: a pure function of the chemical potential and a pure function of the distance. The spatial dependence of these correlation functions is double logarithmic, e.g., the two-point density correlation behaves like D_{2}(r,μ)∝μ^{2}exp[-(-a_{D}lnlnr^{β_{D}})^{α_{D}}] (α_{D}=1.82, β_{D}=0.263, and a_{D}=0.955). The Fourier power spectrum function also behaves like ln[S(q)]=-β_{S}^{-a_{S}}(lnq)^{a_{S}}+2lnμ (a_{S}=3.0±0.1 and β_{S}=2.08±0.03) in contrast to the ordinary Gaussian rough surfaces for which a_{S}=1 and β_{S}=1/2(1+α)^{-1} (α being the roughness exponent). The geometrical properties are, however, similar to the ungated (μ=0) case, with the exponents that are reported in the text.

Scale-invariant puddles in graphene: Geometric properties of electron-hole distribution at the Dirac point

We characterize the carrier density profile of the ground state of graphene in the presence of particle-particle interaction and random charged impurity in zero gate voltage. We provide detailed analysis on the resulting spatially inhomogeneous electron gas, taking into account the particle-particle interaction and the remote Coulomb disorder on an equal footing within the Thomas-Fermi-Dirac theory. We present some general features of the carrier density probability measure of the graphene sheet. We also show that, when viewed as a random surface, the electron-hole puddles at zero chemical potential show peculiar self-similar statistical properties. Although the disorder potential is chosen to be Gaussian, we show that the charge field is non-Gaussian with unusual Kondev relations, which can be regarded as a new class of two-dimensional random-field surfaces. Using Schramm-Loewner (SLE) evolution, we numerically demonstrate that the ungated graphene has conformal invariance and the random zero-charge density contours are SLE_{κ} with κ=1.8±0.2, consistent with c=-3 conformal field theory.

Flavor-dependent supersymmetric phases and CP asymmetry in B --> X(s)gamma decays

We study the direct CP asymmetry in B-->X(s)gamma decay in supersymmetric models with nonuniversal A terms. We show that the flavor-dependent phases of the A terms, unlike the flavor-independent ones, can give rise to a large contribution to the CP asymmetry while respecting the experimental bounds on the branching ratio of B-->X(s)gamma decay and the electric dipole moments of the electron and neutron. The CP asymmetry of this decay is predicted to be much larger than the standard model prediction in a wide region of the parameter space. In particular, it can be of order 10%-15% which can be accessible at B factories.