Direct observation of misfit dislocation glide on surfaces

Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride

Diamond and cubic boron nitride (c-BN) are the top two hardest materials on the Earth. Clarifying how the two seemingly incompressible materials can actually join represents one of the most challenging issues in materials science. Here we apply the temperature gradient method to grow the c-BN single crystals on diamond and report a successful epitaxial growth. By transmission electron microscopy, we reveal a novel misfit accommodation mechanism for a {111} diamond/c-BN heterointerface, that is, lattice misfit can be accommodated by continuous stacking fault networks, which are connected by periodically arranged hexagonal dislocation loops. The loops are found to comprise six 60° Shockley partial dislocations. Atomically, the carbon in diamond bonds directly to boron in c-BN at the interface, which electronically induces a two-dimensional electron gas and a quasi-1D electrical conductivity. Our findings point to the existence of a novel misfit accommodation mechanism associated with the superhard materials.

Interfaces between two materials often show interesting properties. Here, the authors demonstrate that diamond and cubic boron nitride, the hardest materials known, can be grown on top of each other through a novel misfit accommodation mechanism, forming a two-dimensional electron gas at the interface.

Measurement of the phason dispersion of misfit dislocations on the Au(111) surface

We report measurements of the acoustic and optical phason dispersion curves associated with the lattice of partial dislocations on the reconstructed (111) surface of gold. Our measurements of these low energy (<0.5 meV) weakly dispersive modes have been enabled by the very high resolution of the novel helium spin-echo technique. The results presented here constitute the first measurement of the phason dispersion of misfit dislocations, and possibly of excitations associated with any type of crystalline dislocations.

Extraordinary Atomic Mobility of Au{111} at 80 Kelvin: Effect of Styrene Adsorption

We describe how the presence of styrene, a weakly adsorbed molecule, dramatically restructures the Au{111} surface at temperatures as low as 80 K. The restructuring manifests itself both in mobility of step-edge atoms, as well as changes in the position of the herringbone reconstruction over time. These effects are explained in terms of the preferential adsorption sites of styrene allowing it to assist in atom detachment from step edges, as well as lowering of the energetic barrier for movement of the herringbone reconstruction. This work has important consequences for studies in which Au is used as a support for or as an electrical contact to molecules.

Long range substrate mediated mass transport on metal surfaces induced by adatom clusters

Mass transport at surfaces can proceed either (i) by hopping diffusion of atoms on top of the surface from one site to another or (ii) by propagation of small displacements from one atom to the next within the topmost atomic layer. In the latter case, a long range substrate mediated mass transport has been postulated but never observed explicitly. Experimental and theoretical evidence is shown here for the occurrence of such a mechanism on the reconstructed Au(111) surface, where the movement is shown to be well described by a soliton.

The Importance of Threading Dislocations on the Motion of Domain Boundaries in Thin Films

Thin films often present domain structures whose detailed evolution is a subject of debate. We analyze the evolution of copper films, which contain both rotational and stacking domains, on ruthenium. Real-time observation by low-energy electron microscopy shows that the stacking domains evolve in a seemingly complex way. Not only do the stacking boundaries move in preferred directions, but their motion is extremely uneven and they become stuck when they reach rotational boundaries. We show that this behavior occurs because the stacking-boundary motion is impeded by threading dislocations. This study underscores how the coarse-scale evolution of thin films can be controlled by defects.

Strain relief of heteroepitaxial bcc-Fe(001) films

The strain relief of heteroepitaxial bcc-Fe(001) films, deposited at 520-570 K onto MgO(001), has been investigated by scanning tunneling microscopy. In accordance with real-time stress measurements, the tensile misfit strain is relieved during coalescence of flat, mainly 2-3 monolayers (ML) high Fe islands at the high thickness of approximately 20 ML. To accommodate the misfit between merging strain-relaxed islands, a network of 1/2[111] screw dislocations is formed. A strong barrier for dislocation glide--which is typical for bcc metals--is most likely responsible for the big delay in strain relief of Fe/MgO(001), since only the elastic energy of the uppermost layer(s) is available for the formation of an energy-costly intermediate layer.

Quasi-collective motion of nanoscale metal strings in metal surfaces

Mass transport processes on metal surfaces play a key role in epitaxial growth and coarsening processes. They are usually described in terms of independent, statistical diffusion and attachment/detachment of individual metal adatoms or vacancies. Here we present high-speed scanning tunnelling microscopy (video-STM) observations of the dynamic behaviour of five-atom-wide, hexagonally ordered strings of Au atoms embedded in the square lattice of the Au(100)-(1x1) surface that reveal quasi-collective lateral motion of these strings perpendicular to as well as along the string direction. The perpendicular motion can be ascribed to small atomic displacements in the strings induced by propagating kinks, which also provides a mechanism for the exchange of Au atoms between the two string ends, required for motion in string direction. In addition, quasi-one-dimensional transport of Au adatoms along the string boundaries may contribute to the latter phenomenon according to density functional calculations.

Dislocation emission around nanoindentations on a (001) fcc metal surface studied by scanning tunneling microscopy and atomistic simulations

We present a combined study by scanning tunneling microscopy and atomistic simulations of the emission of dissociated dislocation loops by nanoindentation on a (001) fcc surface. The latter consist of two stacking-fault ribbons bounded by Shockley partials and a stair-rod dislocation. These dissociated loops, which intersect the surface, are shown to originate from loops of interstitial character emitted along the <110> directions and are usually located at hundreds of angstroms away from the indentation point. Simulations reproduce the nucleation and glide of these dislocation loops.